TW201042951A - A stretchable form of single crystal silicon for high performance electronics on rubber substrates - Google Patents

Abstract

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Description

201042951 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a single crystal crucible in an extendable form of a performance electronic component used in a rubber substrate. [Prior Art]

Since the first demonstration of the all-polymer transistor printed in 1994, there has been a great interest in the potential new class of electronic systems that contain a programmable integrated electronic device on a plastic substrate. [Garnik f., Hajlaoui, R., Ya Xie, A. and (10) Post, p, ^(10) Dict, pp. 1684-1686] Recently, a large number of studies have been directed to the development of new flexible plastics. A solution of the conductor, dielectric and semiconductor components of the device can process the material. However, advances in the field of flexible electronic devices have not only been driven by the development of new solution-processable materials, but also by new device component geometries, high-efficiency devices and device component processing methods, and 咼 resolution patterns that can be applied to plastic substrates. Driven by technology. It is expected that these materials, device configurations and manufacturing methods will play a key role in the rapid emergence of new flexible integrated electronic devices, systems and circuits. Interest in the field of flexible electronic devices is caused by several important advantages provided by this technology. First, the mechanical durability of the plastic substrate material provides an electronic farm that is less susceptible to damage and/or less susceptible to degradation in electronic performance caused by mechanical stress. Second, the inherent flexibility of such substrate materials allows for their integration into many shapes, thereby providing a large number of useful device configurations that are not available by conventional electronic devices based on brittleness. Finally, the combination of the solution processable component material and the plastic substrate makes it possible to manufacture continuous, high speed, printing technology capable of producing electronic devices at low cost over a large substrate area of 150175.doc 201042951. However, there are several significant challenges in the design and manufacture of flexible electronic devices that exhibit good electronic performance. First, well-developed methods for fabricating conventional germanium-based electronic devices are incompatible with most plastic materials. For example, conventional high tantalum inorganic semiconductor components such as monocrystalline or erroneous semiconductors are typically processed by growing a film at certain temperatures (> 1000 degrees Celsius), which is significantly more than most plastics. (4) or decomposition temperature of the grade board. In addition, most inorganic semiconductors are substantially insoluble in suitable solvents that allow for solution based processing and delivery. Secondly, although many amorphous germanium, organic or hybrid organic-inorganic semiconductors are compatiblely incorporated into plastic substrates: 'and can be used at relatively low temperatures, these materials do not provide good electronic performance. The electronic properties of the integrated electronic device. For example, a thin film transistor having a semiconductor component fabricated from such materials exhibits a field effect mobility of about three orders of magnitude lower than a complementary single crystal based device. As a result of these limitations, flexible electronic devices are currently limited to specific applications that do not require high performance, such as in switching elements for active matrix flat panel displays having non-emissive pixels and in light emitting diodes. The electronic performance capability of integrated electronic devices on extended plastic substrates has advanced to extend its applicability to a wider range of electronic applications. For example, 5' has appeared several new type of lobe buds Mm ' I π i溽 film transistor (TFT) designed to intersect with the processing on the plastic substrate material g ls _ , a at the phase valley and is not significantly higher than And the crystal system Shi Xi, organic or mixed organic - Yi machine Feng Zun _ card _ Chan 戌 ..., machine cattle conductor pieces of thin 臈 臈 ^ ^ ^ ^ ^ ^ ^ ^ ^ A class of higher-efficiency singularity ^ & ^ ^ flexible electronic device system Ji Ge 150175.doc 201042951 by polyfluoride annealing of amorphous thin film by a pulsed laser annealing . (d) Such flexible electronic devices provide enhanced electronic characteristics of the device, but the use of pulsed laser annealing limits the flexibility and flexibility of such devices, thereby significantly increasing costs. Another promising new and more efficient flexible electronic device is to process nano-materials as right-hand macroscopic electronic and microelectronic devices using solutions such as nanowires, nanoparticles, nanoparticles and carbon nanotubes.主动 主动 主动 主动 主动 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散 离散means. Duan et al. describe a thin film transistor design with a plurality of selectively oriented single crystal nanowires or Cds nanobelts as semiconductor channels [Duan, X·, Niu, c, Sahl, v, Chen,] ,parce,]

Empedocles, S. and Goldman, J_, Nature, Vol. 425, 274. p. 278]. The authors report a manufacturing process that is said to be compatible with solution processing on a plastic substrate in which a single crystal nanowire or CdS nanowire having a thickness of less than or equal to 15 nanometers is dispersed in solution. And using a flow-oriented alignment method to assemble it on the surface of a substrate to produce a semiconductor element of a thin film transistor. An optical micrograph provided by the authors suggests that the disclosed manufacturing process produces a single layer of multiple nanowires or nanoribbons in substantially parallel orientation and spaced from about 5 nanometers to about 1000 nanometers. . Although the authors reported relatively high intrinsic field-effect mobility (=119 cm2 V-1 S-1) for individual nanowires or nanobelts, the total device field-effect mobility has recently been judged as Duan et al. reported an intrinsic field effect mobility value of 150175.doc 201042951 "approximately two orders of magnitude". [Mitzi, DB, Kosbar, LL., Murmy, CE, Copel, M. Afzali, A" Nature, page 428 Page, page 299 3〇3]. The field effect mobility of this device is several orders of magnitude lower than that of the conventional single crystal inorganic thin film transistor's device and may be attributed to alignment, tight packaging, and electricity using the method and device configuration disclosed by Duan et al. Contact the actual challenges in discrete nanowires or nanobelts. Nanocrystalline crystal solutions have also been explored as precursors for polycrystalline inorganic semiconductor thin films as a means of providing printable electronic devices that exhibit higher device performance characteristics on plastic substrates. Ridley et al. disclose a solution processing process in which a solution of cadmium selenide crystals having a size of about 2 nanometers is treated at a plastic compatible temperature to provide a semiconductor component of a field effect transistor. [Ridley, BA·, Nivi, B. and Jacobs〇n, j M, Science, Vol. 286, 746-749 (1999)] The authors report a method in which the low temperature in cadmium selenide crystals Grain growth provides an early crystalline region of the inclusion of three hundred nanometer crystals. Although Ridley et al. reported an improved electronic property relative to a comparison device having an organic semiconductor device as a device mobility achieved by such techniques (sl cm2 v·! device than a conventional single crystal inorganic thin film transistor) Field effect mobility is orders of magnitude lower. The limitation of field effect mobility achieved by Ridley et al.'s device configuration and fabrication methods may be due to electrical contact established between individual nanoparticles. The use of organic end groups to stabilize the nanocrystal solution and prevent agglomeration prevents the formation of good electrical contact between adjacent nanoparticles, which is necessary to provide high device field mobility. J50175.doc 201042951 G. Duan et al. and Ridley et al. provide a method for fabricating a thin film transistor on a plastic substrate, the device configuration described comprising mechanically rigid device components such as electrodes, semiconductors and/or dielectrics. The use of a plastic substrate with good mechanical properties provides an electronic device that can operate in an extended or twisted orientation. However, it is expected Deformation can create mechanical stress on individual rigid optoelectronic device components. This mechanical stress can cause damage to individual components, such as cracks, and can also degrade or interrupt electrical contact between device components. Whether electronic systems based on plastic substrates developed by et al., Ridley et al. and others provide the necessary mechanical extensibility for many important device applications, including flexible sensor arrays, electronic paper, and wearable electronic devices. Clearly. Although these teams have demonstrated electronic devices capable of withstanding the deformation caused by deflection, such a system based on plastic embossing is unlikely to undergo considerable extension without damage, mechanical failure, or efficacious effects. The system is degraded. Therefore, such systems are unlikely to withstand the deformation required by the deformation or expansion of the expansion or compression profile to cover highly undulating surfaces, such as curved surfaces having large radii of curvature. It is expected that advances in the field of flexible electronic devices will play a key role in several important new technologies and prior art. However, flexible The success of such applications of SEO technology is highly dependent on new materials, device configurations, and integrated electronic circuits and devices used to fabricate good electrical, mechanical, and optical properties in flexure, deformation, and bending configurations. The continuous development of commercially viable manufacturing processes. In particular, high-performance, mechanically extensible materials and mechanical configurations of electronic and mechanical properties that are not useful in extending or shrinking configurations are required. The present invention provides extendable semiconductors and extendable electronic devices, device implants, and circuits. As used herein, the term "extensible" refers to materials, structures, devices, and device components that can withstand strain without cracking or mechanical failure. The extendable semiconductor and electronic devices of the present invention are extensible and, therefore, extend and/or compress at least to some extent without damage, mechanical failure, or significant degradation in device performance. The extendable semiconductor and electronic circuits of the present invention, which are preferred for certain applications, are flexible (except for being extensible) and are therefore capable of significant elongation, flexing, bending or performing along one or more axes Other variants.

C Useful extendable semiconductor and electronic devices of the present invention are capable of elongating, compressing, twisting and/or expanding without mechanical failure. In addition, the extendable semiconductor and electronic circuits of the present invention exhibit good electrical performance even when subjected to significant strains such as greater than or equal to about 0.5%, preferably 1% and preferably 2% strain. Flexible extensible semiconductor and electronic devices, device components, and circuits also exhibit good electrical performance when in a flexed, bent, and/or deformed state. Because the extendable semiconductor component and the extensible electronic device assembly and circuit of the present invention provide useful electronic f and mechanical durability in the orientation of the device for flexing, extending, compressing or deforming, a wide range of device applications are provided. And device configuration. The extendable and/or flexible semiconductor of the present invention may also (as appropriate) be printable and (optionally) may comprise a composite semiconductor component having operatively associated with other structures, materials and/or device components. A semiconductor structure (such as a dielectric material Z layer, electrodes, and other semiconductor materials and layers). The present invention includes a wide range of extendable and/or flexible electronic and/or optoelectronic devices having extendable and/or flexible semiconductors including, but not limited to, transistors, diodes, illumination Diodes, organic light-emitting diodes (OLEDs), lasers, microelectromechanical devices and nanomechanical devices, microfluidic devices and nanofluid devices, memory devices, and system-level integrated electronic circuits ( Such as complementary logic circuits). In one aspect, the invention provides that when in flexion, expansion, compression,

An extendable semiconductor component that provides useful functional properties in a bent and/or deformed state. As used herein, the expression "semiconductor element" and "semiconductor structure" are used equally herein and generally refer to any semiconductor material, composition or structure, and particularly include high quality single crystal and polycrystalline semiconductor, fabricated via high temperature processing. Semiconductor materials, doped semiconductor materials, organic and inorganic semiconductors, and composite materials having one or more additional semiconductor components and/or non-semiconductor components such as 'dielectric layers or materials and/or conductive layers or materials. The extensible semiconductor device of the present invention comprises a semiconductor structure having a flexible substrate having a -cut surface and an m (four) surface (eg, a curved inner surface provided by the curved configuration of the semiconductor structure). In the embodiment, at least the surface of the semi-conductive structure is bonded to the (four) surface of the curved plate. There is a curve in the useful curve of the present invention, and the semiconductor structure of the semiconductor structure comprises a curved structure. In this paper, "bend Having: a structure in which a curve is formed by applying a force. The present invention may have one or more folded regions, raised regions, and/or recessed regions. For example, 'the curved structure useful in the present invention can be provided by a 150175.doc 201042951 crimp configuration, a warp configuration, and/or a wave (ie, waveform) configuration. An extendable curved semiconductor structure such as a curved inner surface and an electronic circuit can be combined with a flexible substrate such as a polymer and/or an elastic substrate in a configuration in which the curved structure is strained. In some embodiments A meandering curved structure, such as a curved ribbon structure, is subjected to a strain of equal to or less than about 30%, and is subjected to strains equal to or at about 1 Torr/0 in embodiments preferred for certain applications, and/or Embodiments that are preferred for certain applications are subjected to strains equal to or less than about 1%. In certain embodiments, the curved structure, such as a tortuous ribbon structure, is selected to be selected from about 1% to about 30. A strain in the range of %. In a useful embodiment, a semiconductor structure having a curved inner surface includes a transferable semiconductor component at least partially bonded to the support flexible substrate. In this context, "transferable semiconductor component" Department one Transferring semiconductor structures from a donor surface to a receptor surface, for example, via deposition techniques, printing techniques, patterning techniques, and/or other material transfer methods. Useful transferable semiconductor components, composites, and devices useful in the method include However, it is not limited to a printable semiconductor component. Suitable flexible substrates include, but are not limited to, polymer substrates, plastic substrates, and/or elastic substrates. For example, in one embodiment, the invention includes a transfer and combination Transferable and (as appropriate) printable semiconductor components to a pre-strained elastomeric substrate. Useful transfer methods in this aspect of the invention include printing techniques such as contact printing or solution printing. Subsequent relaxation of the elastic substrate Producing a strain on the transferable and (as appropriate) printable semiconductor element i50175.doc -10- 201042951, resulting in (for example via bending and/or warping of the semiconductor component) the inner surface of the curve form. In some embodiments, a semiconductor component having a curved inner surface is fabricated (eg, as described above) and subsequently transferred from a flexible substrate used to create its curved surface to a different flexible substrate and is otherwise flexible The substrate is bonded. A useful embodiment of this aspect of the invention includes a transferable and (as appropriate) printable semiconductor structure comprising curved semiconductor strips, wires, strips, discs, plates, blocks, columns having curved inner surfaces Or a cylinder having an enemies, ridges, and/or wave configuration. However, the invention includes an extendable semiconductor wherein the semiconductor component is not provided to the flexible substrate via a printed member and/or wherein the semiconductor component is unprintable. The present invention includes extendable semiconductors comprising a single semiconductor component having a curved inner surface supported by a single flexible substrate. Or the extensible semiconductor of the present invention comprises a plurality of extensible semiconductor elements 〇 # ' such extensible semiconductor elements having curved inner surfaces that are supported by a single-flex flexible substrate. Embodiments of the invention include an array or pattern of extensible semiconductor components having curved inner surfaces that are supported by a single leutable substrate. Optionally, the extensible semiconductor component in the array or pattern has a well defined, pre-selected physical size, location, and relative spatial orientation.立本:: Also includes extendable electronics, device components and/or circuits, or extended semiconductor structures, and additional integrated device sets ★ electrical contacts, electrodes, conductive layers, dielectric layers, and/or Extra half 150175.doc 201042951 Conductor layer (eg doped layer, face, etc.). In this embodiment, the extendable semiconductor structure and the additional integrated skirt assembly are operatively coupled to provide selected device functionality and are electrically or insulative to each other. In certain useful embodiments, at least a portion or all of the additional integrated device components (and the extendable semiconductor) have curved inner surfaces that are supported by the support surface of the flexible substrate. Supported and provided in a curved structure of, for example, a curved structure having a curled, wavy, interesting, and/or entrapped configuration. Additional integrated device components and curves of extendable semiconductors: the surfaces may have substantially the same or different wheel shapes. The present invention includes a yoke-only example in which the extendable device components are interconnected via metal interconnects that exhibit substantial extensibility or metal interconnects that also have a corrugated, corrugated, f-curved, and/or raised configuration. The curved inner surface configuration of the additional integrated device assembly is provided in certain embodiments by a generally curved configuration of electronic devices such as crimp, wave, rib, and/or wrinkle configurations. In such embodiments, the curved structure allows such devices to exhibit good electrical performance even when subjected to significant strain, such as maintaining electrical conductivity or insulation with a semiconductor component when in an extended, compressed, and/or curved configuration. The extendable electronic circuitry can be fabricated using techniques similar to those described herein for fabricating extensible semiconductor components. For example, in one embodiment, an extensible device component comprising an extendable semiconductor component is fabricated separately and then interconnected. Alternatively, a semiconductor-containing device can be fabricated in a flat configuration and the resulting planar device can be subsequently processed to provide a generally curved device structure having a curved inner surface of one or all of the device components. 150175.doc 12 201042951 The present invention includes extendable (four) sub-devices comprising and having a single-electronic device from the curved inner surface of the early flexible substrate support. Or the invention includes an array of extendable electronic devices comprising a plurality of extendable electronic devices or device components, each having a curved inner surface supported by a single interchangeable substrate. Alternatively, the extendable electronic farm in the array of devices of the present invention has well defined, pre-selected physical dimensions, locations, and relative spatial orientations. ❹ 〇 In some embodiments of the invention, the inner surface of the curved surface of the semiconductor structure or electronic device is provided by a curved structure. The curved structure and curved inner surface of the semiconductor and/or electronic device of the present invention may have any contour shape that provides extensibility and/or flexibility, including (but not limited to, at least one recessed area or at least, _ a plurality of V-convex to sand and one convex region combined with one of the at least one concave region as a characteristic contour shape. The contour shape useful in the present invention includes a wheel that varies in one or two spatial dimensions. The shape of the gallery. The use of an inner surface (which has a contour shape that exhibits a periodic or aperiodic change in a plurality of spatial dimensions) is extended in a plurality of directions. An extendable semiconductor and/or electronic device that shrinks, flexes, or otherwise deforms. Useful embodiments include curved inner surfaces of curved halves for mu h bovine conductors and/or electronic devices. Curved semiconductor structure and/or electron == configuration of raised and recessed regions, for example, in a waveform configuration, an alternating pattern of raised and concave regions. In an embodiment, may be flexible or flexible Semiconductor element (Iv) or the curved surface of the electronic device, or the case ⑽) the entire cross section of the assembly has a profile shape is characterized by a substantially periodic waveform or substantially non 150175.doc Ί3- 201042951 periodic waveform. In this context, the periodic waveform may comprise any two-dimensional or two-dimensional dimensional waveform, including (but not limited to) - or a plurality of sine-skin square wave Aries functions, Gaussian waveforms, Zlan waveforms, or the like. A combination of waveforms. In another embodiment, the curved inner surface of the semiconductor or electronic device, or (as appropriate) the entire cross-section assembly has a contour shape consisting of *a plurality of aperiodic _ ribs having a large amplitude and width. In another implementation, the curved inner surface of the semiconductor or electronic device or (as appropriate) the entire cross-section assembly has a contour shape consisting of a periodic waveform and a plurality of non-periodic warps. In an embodiment, the extensible semiconductor component or electronic device package of the present invention: two: a curved structure such as - has a period or aperiodic waveform structure extending along its length and (as appropriate) width to / ° boring tool A curved ribbon-like knot + exemplified, the present invention includes a curved structure comprising a sinusoidal configuration having a period between about 1 micrometer and (10) micrometer and an amplitude between about nanometer and scoop micron. Curved ribbon structure. The curved structure can be provided in other periodic waveform configurations, such as square and/or Gaussian waveforms that extend along at least a portion of the length and/or width of the structures. An extendable and flexible semiconductor component comprising a curved ribbon D structure and an extendable electronic device extendable along an axis extending along the length of the semiconductor strip (such as along a first main waveform of the inner surface of the curved surface) The axis) expands, compresses, bends, and/or deforms, and (depending on the condition) can expand, compress, and bend a plurality of other axes, such as an axis extending along the curved structures and other directions of the inner surface of the curved surface. And / or deformation. In a certain embodiment, the semiconductor structure and the electron of the aspect of the invention are changed. The configuration of the device changes when subjected to mechanical stress or when a force is applied. By way of example, the curved semiconductor structure and electronic device having a wavy or warped configuration may have a period and/or amplitude that may vary in response to applied mechanical stress and/or force. • In some embodiments, the ability to modify the configuration provides for extensible semiconductor structures and electronic circuits to expand, collapse, flex, deform, and/or bend without significant mechanical damage, cracking, or substantial electronic properties and / or the ability to reduce the performance of electronic devices. The curved inner surface of the semiconductor structure and/or the extendable electronic device can be continuously bonded to the support surface (ie, bonding p or 'the semiconductor structure) at substantially all points (eg, about 9 G%) along the inner surface of the curve And/or the curved inner surface of the extendable electronic device is intermittently engageable with the surface of the support, wherein the curved inner surface is joined to the surface of the support at a selected point along the inner surface of the curve. The present invention includes an embodiment, Wherein the curved inner surface of the semiconductor structure or the electrical device is bonded to the flexible substrate at discrete points, and the inner surface between the inner surface and the discrete bonding point between the flexible substrate has a curved configuration. The invention includes a curved semiconductor with an inner surface = an electronic device 'the inner surface and the flexible substrate are at discrete points. 'The wipe (4) discrete joints are not The flexible substrates are directly isolated from each other by the ridged regions. In some flexible semiconductors and/or flexible electronic devices of the present invention: the inner surface of the Erfengfeng conductor structure or electronic device is provided in a curved configuration - 〆 The invention includes an extendable semiconductor and an extendable electronic device provided in a curved configuration, wherein the curved semiconductor structure or electronic device has a cross section, and the member is provided in a curved configuration, such as a waveform, a pleat, a face rib 150175 .doc •15- 201042951 or crimped configuration. The conductor structure (4) extends through the half-, the entire thickness of the two parts. For example, / bite curl: energy extendable semiconductors include waveforms, wrinkles, ridges And: a curved configuration of a curved semiconductor strip or strip. The invention also includes a composition <electronic device, wherein at least a majority of the entire semiconductor junction structure or electronic device is in a curved or fused phase Or curved configuration. The chord line provides, for example, some of the embodiments, the waveform, the interesting edge and/or the extendable configuration provide: - Applicability to adjust the properties of the compositions, materials and devices of the invention: For example, the mobility of the semiconductor and the nature of its contacts are at least: the ground depends on the strain. The spatially varying strain in the present invention helps to adjust the material and device properties in an advantageous manner. In one example, the spatially varying strain in the waveguide causes spatially variable refractive index properties (via the bounce effect) 'which can also be advantageously used for different types of grating couplers. Extensible semiconductor structures and/or electronic condominiums The bonding between the surface and the outer surface of the levable substrate can be provided using any mechanically useful system, prior composition, structure or bonding mechanism that is capable of withstanding extension and/or compression. Displacement without mechanical failure or significant degradation of electronic properties and/or performance and (as appropriate) flexural displacement without mechanical failure or significant degradation of electronic properties and/or performance. The semiconductor structure and/or electronic device The useful combination between the flexible substrates provides a mechanically stable structure that exhibits beneficial electronic properties when subjected to a variety of extension, compression, and/or flexing configurations or deformations. In an embodiment of this aspect of the invention, the bonding between at least a portion of the inner surface of the semi-four structure and/or electronic device and the outer surface of the flexible 150175.doc 16-201042951 substrate is Covalent and/or non-covalent bonding between the semiconductor structure or electronic device and the outer surface of the flexible substrate. An exemplary combination of such structural towels useful - including the use of the half-# body structure or electronic skirt and the van der Waals interaction between the outer surface of the flexible substrate, dipole-dipole interaction and / Or hydrogen bonding interactions. The invention also includes embodiments in which bonding is provided by a bond or laminate or film between the semiconductor structure or electronic device and the outer surface of the flexible substrate. Useful bonding layers include, but are not limited to, metal layers, polymer layers, partially polymerized polymer precursor layers, and composite layers. The invention also includes the use of a leutable substrate having a chemically modified outer surface to facilitate, for example, a flexible substrate (such as a polymer substrate) having a plurality of radical groups disposed on an outer surface thereof. A combination of semiconductor components or electronic devices. The present invention includes flexible semiconductors and electronic circuits in which the semiconductor structure or electronic circuitry is wholly or partially encapsulated in an encapsulation layer or coating, such as a polymeric layer. The physical dimensions and compositions of the semiconductor structure or electronic device at least partially affect the overall mechanical and electronic properties of the extensible semiconductor component of the present invention. As used herein, the term "thin" refers to a structure having a thickness of less than or equal to about 100 microns, and preferably less than or equal to about 50 microns for certain applications, such as thin semiconductor strips, small plates, and strips. The use of a thin semiconductor structure or electronic device of a thin film transistor is important in some embodiments to facilitate the formation of a curved inner surface such as a curved, curled or curved inner surface to provide extension, contraction and/or Winding without damage, mechanical failure, or significantly degraded configuration of electronic properties. Such as thin printable half 150175.doc -17· 201042951 The thin semiconductor structure of the conductor structure and the use of electronic devices include such as single crystal and / or more Extendable semiconductors and extendable electronic devices of fragile semiconductor materials of crystalline inorganic semiconductors are particularly useful. In a useful embodiment, the semiconductor structure or electronic circuit has a width selected over a range of from about 1 micron to about 1 cm and A thickness selected from the range of from about 50 nanometers to about 50 micrometers.

The composition and physical dimensions of the support flexible substrate can also at least partially affect the overall mechanical properties of the extensible semiconductor component and the extendable electronic device of the present invention. Useful flexible substrates include, but are not limited to, flexible substrates having a thickness selected from the range of from about 0.1 mm to about 1 μm. In a useful embodiment, the flexible substrate comprises a poly(dimercaptodecane) PDMS layer and has a thickness selected from the range of from about 0.1 mm to about 10 mm. The invention also includes partially processed extendable semiconductor components or partially processed extendable semiconductor circuits. For example, in one embodiment, the invention includes a Si ribbon having a pn diode device thereon. The si strips provided in a waveform configuration are optionally provided on a PDMS substrate. Interconnects are provided between the (insulated) diodes such that the diode output (e.g., photocurrent) 0 can be amplified, such as by metal evaporation using a shadow mask. In the case of the shell, a plurality of independent extensible transistors are fabricated on the elastomer. Individual transistors are wired in some manner (e.g., by shadow mask evaporation) to make other useful circuits, such as circuits composed of a number of transistors connected in a particular manner. For these conditions, the #interconnect metal wire is also extensible, so we have a fully extendable circuit on the elastomer. In another aspect, the invention provides a method for fabricating an extensible semiconductor element 150175.doc -18- 201042951, comprising the steps of: (丨) providing a transferable semiconductor structure having an inner surface; (2) Providing a pre-strained elastic substrate in an expanded state, wherein the elastic substrate has an outer surface; at least a portion of an inner surface of the transferable semiconductor structure is bonded to an outer surface of the pre-strained elastic substrate in an expanded state; and (4) The elastic substrate is allowed to at least partially relax to a relaxed shape, wherein the relaxation of the elastic substrate causes the inner surface of the transferable semiconductor structure to be curved, thereby producing an extendable semiconductor component having a curved inner surface. In some embodiments of this aspect of the invention, the pre-strained elastic 基板 substrate expands along a first axis and optionally expands along a second axis that is orthogonally positioned relative to the first axis. In a useful embodiment, the transferable semiconductor component provided to the pre-strained flexible substrate is a printable semiconductor component. In another aspect, the present invention provides a method for fabricating an extendable electronic circuit that includes the steps of: (1) providing a transferable electronic packet with an inner surface, and (2) providing an expanded state. a pre-strained elastic substrate, wherein the elastic substrate has an outer surface; (3) combining at least a portion of an inner surface of the transferable electronic circuit with an outer surface of the pre-strained elastic substrate in an expanded state; and (4) allowing the elasticity The substrate is at least partially relaxed to a relaxed state wherein the elastic substrate elastically bends an inner surface of the electronic circuit to produce the extendable electronic circuit. In a useful embodiment, a transferable electronic circuit to the pre-strained elastomeric circuit is provided - a printable electronic circuit, such as an electronic circuit that can be transferred via a printing technique such as a dry transfer contact printing. In some embodiments, the electronic circuit includes a plurality of integrated device components, including but not limited to: one or more semiconductor components (such as transferable and (as appropriate) printable semiconductor components), dielectric 150175.doc -19· 201042951 70 pieces of electrodes, conductive elements including superconducting elements, and doped semiconductor elements k. The method of this aspect of the invention may further comprise extensible semiconductors or extensions from the selective elastic substrate (4) The electronic circuit is transferred to a receiving substrate in a manner that at least partially retains the curved inner surface and/or curved structure of the semiconductor component or electronic circuit. The semiconductor component or electronic circuit is transferred to a receiving substrate that is flexible, such as a polymer receiving substrate, or a receiving substrate comprising paper, metal or semiconductor. In this embodiment, the transferred extensible semiconductor or extendable electronic device can be combined with the receiving substrate (eg, a flexible, polymer receiving substrate) via a wide range of means including, but not limited to, Adhesive and/or laminate layers, films and/or coatings are used, such as adhesive layers (eg, polyimide layers). Alternatively, the transferred extensible semiconductor or extensible electrons may be hydrogen bonded, covalently bonded, dipole-dipole interaction between the transferred extensible semiconductor or extendable electronic device and the receiving substrate, and Van Valle interacts with a receiving substrate such as a flexible, polymer-receiving substrate. In one embodiment, after fabricating a curved semiconductor structure and/or electronic circuit having a wavy, warped, pleated or crimped configuration supported by an elastomeric substrate, the structure is applied using a suitable adhesive layer or coating. Transfer to another substrate. For example, in the embodiment, a corrugated photovoltaic device is prepared on a ruthenium elastomer substrate, and then transferred to the metal $, for example, using polyimine as a glue layer. In the photovoltaic device and the lower (four) metal ruthenium (which can serve as one of the collectors, for example, by patterning, etching to make via holes to expose 150175.doc -20- 201042951 exposed metal surface, metal deposits, etc.) Establish an electrical connection between them. The wavy surface of this configured photovoltaic device can be utilized to enhance light capture (or reduce light reflection). For example, a better anti-reflection result can be further processed on the skin surface, such as making the surface roughness much less than the wavelength of the wavy semiconductor. Briefly, some or all of the processed wavy/curved semiconductor/circuit can be transferred to other substrates (not limited to qing) and, if necessary, further processing can be added to achieve enhanced performance. The method of the present invention may further comprise the step of encapsulating, covering or laminating the extensible semiconductor or extendable electronic device. In this context, the encapsulation of the scalloped structure includes the geometry and configuration in which the encapsulating material is provided under the raised regions of the ribs to completely immerse the rib structure. Encapsulation also includes providing an encapsulation layer, such as a layer of agglomerates, on top of the convex and non-protruding features of the curved semiconductor structure or electronic circuit. In one embodiment, a prepolymer such as a prepolymer is cured on the extendable conductor or extendable electronic device ◎. For some applications, the encapsulation or overlay processing steps help to enhance the invention. It can extend the mechanical stability and stability of semiconductors and electronic devices. The present invention includes expandable semiconductors and electronic devices that exhibit good mechanical and electronic effectiveness when in extended, compressed, bent and/or flexed configurations. Optionally, the method of this aspect of the invention comprises assembling a semiconductor component, a device component, and/or on a donor substrate such as a polymer substrate (eg, a 2D ultra-twisted polymer substrate) or an inorganic substrate (eg, Si〇2). Or the steps of a functional device. In this embodiment, the structure assembled on the donor substrate is then transferred 150175.doc -21 - 201042951 to a pre-strained elastomeric substrate to form an extensible material, device or device assembly. In one embodiment, a transistor, an array of transistors, or an electronic device having a transistor is first assembled on a donor substrate, such as via a printing technique using a printable semiconductor component. Next, the entire apparatus and/or array of devices is transferred to a pre-strained elastic substrate (e.g., by contact printing) to form an extendable wave opening and/or warping system. Preparation of device interconnects and fabrication of actual size circuits on a thin, non-elastomeric material (similar to polyimide or benzoquinone cyclobutene or PET, etc.) prior to transfer to an extensible elastomeric patch This method is useful when advantageous. In such systems, aperiodic 2D waveforms or warped edges will be obtained in a combined transistor/polymer film/elastomer substrate system. The method of pre-straining an elastic substrate useful in the method includes 'study, curl, flex, and expand the elastic substrate (e.g., before, during, and/or during contact with and in conjunction with the semiconductor structure and/or electronic device). By using a mechanical platform). One method of pre-straining an elastic substrate in a plurality of directions is particularly useful for thermally expanding the elastic substrate by increasing the temperature of the elastic substrate before and/or during contact with and bonding with the semiconductor structure and/or electronic device. In such embodiments, the relaxation of the elastic substrate is achieved by lowering the temperature of the flexible substrate after contact and/or bonding with the transferable and (as appropriate) printable semiconductor component or electronic device. In some methods, the elastic substrate is pre-strained by introducing a strain of from about 1% to about 3%. As used herein, the term 'elastic substrate' refers to a substrate that can be extended or deformed and can be returned to its original shape without substantial permanent deformation. The elastic substrate is typically subjected to a substantially elastic deformation of 150175.doc -22- 201042951. Exemplary elastic substrates useful in the invention include, but are not limited to, elastomers and composites or mixtures of elastomers and elastomers, elastomeric polymers and copolymers. In some methods, the cartridge is provided via one f substrate β or a main axis expansion mechanism to pre-strain the elastic substrate. For example, 'the pre-strain can be provided by expanding the elastic substrate along the first axis. However, the present invention also includes the elasticity along a plurality of axes. The method of expanding the substrate, for example, via first and second enthalpy expansions positioned orthogonally relative to each other. The means available in the method for pre-straining the elastic substrate via a mechanism that provides expansion of the elastic substrate includes variability 'Curling, flexing, leveling, (d) or otherwise deforming the elastic substrate. The invention also includes providing the elastic group by raising the temperature of the elastic substrate Thermal expansion provides a means of pre-straining. The method of the present invention can also produce extensible components, devices and device components from materials other than semiconductor materials. The invention includes non-semiconductors such as insulators, superconductors' and semi-metals. A method of transferring and bonding a structure to a pre-strained elastic substrate. Allowing the elastic substrate to at least partially loosen the resulting non-semiconductor structure with an inner surface (eg, a non-semiconductor surname with a wavy and/or ridged profile) The formation of &, Ή, etc.. The aspect of the invention includes an extensible non-semiconductor structure having a curved structure, such as a wrinkle configuration of a crimped configuration, and a configuration of a ridge structure and/or Or an inner surface and (as appropriate) an outer surface provided in a waveform configuration. The touchable substrate in the extensible semiconductor, electronic device and/or device assembly of the present invention includes, but is not limited to, a polymer substrate and/or plastic The base semiconductor includes a semiconductor structure comprising - or a plurality of transferable (as appropriate) 150175.doc • 23- 201042951 printed (such as printable semi-conductive a composition of elements that is supported by an elastomeric substrate that is pre-strained during fabrication to produce the inner surface of the semiconductor curve. Or 'extensible semiconductors include one or more transferable semiconductor structures (such as printable semiconductor components). a composition supported by a flexible substrate different from an elastic substrate pre-strained during manufacture to produce an inner surface of the semiconductor curve. For example, the invention includes an extendable semiconductor having a semiconductor structure having a curved inner surface The same reference numerals are used to refer to like elements and the same reference numerals are used in the various drawings to refer to the same elements. In addition, in the following The following definitions apply: tl '·printable, relating to materials, structures, device components and/or integrated functional devices that can be transferred, assembled, patterned, organized and/or integrated onto or into a substrate. In one embodiment of the invention, printable materials, components, device components and devices can be transferred, assembled, patterned, organized, and/or integrated onto a substrate via solution printing or dry transfer contact printing. The semiconductor component comprises a semiconductor structure that can be assembled (eg, by dry transfer contact printing and/or solution printing methods) and/or integrated onto the surface of the substrate. In a f wire you 丨φ,士& η杜么敕Μ The invention of the printable semiconductor element semiconducting ^ / crystal (10) kiss eryStaUine), polycrystalline or microcrystalline inorganic monomer H ο In this article, the overall structure It has mechanically connected features. The semiconductor device of the present invention may be undoped or doped, with a selected spatial distribution of dopants, and may include a plurality of different dopant materials that are doped with a 150175.doc-24-201042951 咖 剂 agent. To dope. The invention includes at least one microstructure-printable semiconductor component having a cross-sectional dimension greater than or equal to about 1 micron and at least one nanostructure printable semiconductor component having a cross-sectional dimension of less than or equal to about (four) meters. Printable semiconductors useful in many applications include those obtained from "top-down" processing of high purity bulk materials such as high purity crystalline semiconductor wafers produced using conventional high temperature processing techniques. In an embodiment, the printable semiconductor component of the present invention comprises a composite structure having an operative connection to at least one additional device component or structure (such as a conductive layer, a dielectric layer, an electrode, an additional semiconductor structure, or any of these) Combined) semiconductor. In an embodiment, the printable semiconductor component of the present invention comprises a semiconductor element, and an ortho semiconductor element. "Sectional dimension" refers to the dimensions of the cross-section of a device, device component or material. The cross-sectional dimensions include width, thickness, radius and diameter. For example, a semiconductor component having a strip shape with a length and two cross-sectional dimensions: thickness and width For example, a cylindrically printable semiconductor component is characterized by a length and a cross-sectional dimension: diameter (or radius). Supported by a substrate means at least partially present on the surface of the substrate or at least ^ Knife is present in one or more structures that are interposed between the structure and the surface of the substrate. The substrate support may also refer to a process in which some or all of the solution printing is performed, such as a printable semiconductor structure, to be dispersed into a selected region of the carrier medium. The substrate is red in the case of an inactive solution. In the printing method, the structure 150175.doc •25- 201042951 is transferred to a base 矣ιϋ π, the hetero-r-, the region is formed by the morphology and/or the entity of the surface of the plate subjected to patterning. It can be achieved by the method of Weitian (4) characteristic (4). The solution printing method which can be used in the present invention includes, but is not limited to, ink jet printing, yttrium printing, and capillary printing. ... "substantial longitudinal orientation "refers to the orientation of the longitudinal axes of the groups...* The elements of the conductors are generally aligned with the selected alignment. In the context of this derogatory meaning, the disk---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- . "Extensible" means the ability of a material, structure, nightmare device or device assembly to withstand strain and rupture of the helmet. In an exemplary embodiment, the extensible material, structure, device or device component can withstand greater than A strain of about 5% without cracking, for some applications, can withstand strains greater than about 1% without cracking, and for some applications it is best to withstand strains greater than about 3% without cracking. Flexibility, and, bendable, is used equally herein, and refers to the ability of a material, structure, device, or device component to be deformed into a curved shape without undergoing a transformation that introduces significant strains. Strain such as the point of failure of a characterization of a material, structure, device, or component. In an exemplary embodiment, the flexible material, structure, device, or device component can be deformed into a curved shape without introducing a strain greater than or equal to about 5%, and for some applications preferably does not introduce greater than or equal to about 1%. The strain' and for some applications it is preferred not to introduce a strain greater than or equal to about 5%. The term, rib, means that when a thin component 'structure and/or device is smeared in a direction outside the plane of the component's configuration and/or placement, it responds to a pressure 150175.doc • 26 - 201042951 Solid deformation that occurs when strain is reduced. The invention includes extensible semiconductors, devices and assemblies having one or more surfaces having a contour shape comprising one or more ridges. "Semiconductor" means any pole A material that is an insulator at low temperatures but has a significant conductivity at about 300 absolute temperatures. In this context, the use of the term semiconductor is intended to be consistent with the use of this term in the art of microelectronics and electronic devices. The semiconductor of the present invention may comprise elemental semiconductors such as ruthenium, iridium and diamond, and composite semiconductors such as Group IV complex conjugated semiconductors (such as SiC and SiGe), Group III-V semiconductors (such as AlSb, AlAs, Ain, A1P). , BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP), Group III-V ternary semiconductor alloys (such as AUGa^As), Group II-VI semiconductors (such as CsSe, CdS, CdTe, ZnO, ZnSe, ZnS, and ZnTe), Group I-VII semiconductor CuCl, Group IV-VI semiconductors (such as PbS, PbTe, and SnS), layer semiconductors (such as Pbl2, MoS2, and GaSe), oxide semiconductors (such as CuO) And Cu20). The term semiconductor includes an exogenous semiconductor and an intrinsic semiconductor germanium (including a semiconductor having a P-type dopant material and an n-type dopant material) doped with one or more selected materials to provide a suitable application or device. Advantageous electronic properties. The term semiconductor includes composite materials comprising a mixture of semiconductors and/or dopants. Specific semiconductor materials suitable for use in certain applications of the invention include, but are not limited to, Si, Ge, SiC, AlP, AlAs , AlSb, GaN, GaP 'GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, PbSe, PbTe , AlGaAs, AlInAs, AllnP, 150175.doc -27- 201042951

GaInP, AlGaAsSb, AlGalnP and

GaAsP, GalnAs 矽 矽 semiconductor material is suitable for use in the field of sensors and luminescent materials such as light-emitting diodes (LEDs) and solid-state lasers, and the impurity of the semiconductor material is different from the semiconductor material itself. Or any atom, element, ion and/or molecule that provides a dopant to the semiconductor material. Impurities are undesired substances in semiconductor materials that can adversely affect the electronic properties of semiconductor materials, including but not limited to oxo and metals including heavy metals. Heavy metal impurities include, but are not limited to, the family of elements, calcium, sodium, and all their ions, complexes, and/or complexes between copper and copper on the periodic table. Plastic Steep ♦ Any synthetic or naturally occurring material or combination of materials that is typically molded or shaped and hardened into a desired shape when heated. Exemplary plastics suitable for use in the devices and methods of the present invention include, but are not limited to, polymers, resins, and cellulose derivatives. As used herein, the term plasticity is intended to include composite plastic materials comprising one or more plastics having - or a plurality of additives, such additives may be provided as structural enhancers, fillers, fibers, plasticizers, stabilizers or may be provided Additives of desired chemical or physical properties. Dielectric "dielectric materials" are used equivalently herein and refer to materials that have a high impedance to current. Suitable dielectric materials include, but are not limited to, Si〇2, Ta205, Ti02, Zr02, Y2〇3, siN4, ST〇, BST, PLZT, PMN, and PZT. Polymer " refers to a molecule comprising a plurality of repeating chemical groups commonly referred to as monomers. Polymers are generally characterized by high molecular weight. The polymer usable in the present invention may be an organic polymer or an inorganic polymer, and may be in an amorphous state, 150175.doc -28- 201042951 Ο Ο semi-amorphous, crystalline or partially crystalline state. The polymer may comprise monomers having the same chemical composition or may comprise a plurality of monomers (such as copolymers) having different chemical compositions. Crosslinked polymers having a chained monomeric chain are especially useful in certain applications of the invention. Polymers useful in the methods, devices, and device components of the present invention include, but are not limited to, plastics, elastomers, thermoplastic elastomers, elastomers, elastomers, thermostats, thermoplastics, and acrylates. Exemplary polymers include, but are not limited to, acetal polymers, biodegradable polymers, cellulosic polymers, gas-containing polymers, resistance, polyacrylonitrile polymers, polyamido-imine polymers Polyimine, polyaryl vinegar, polybenzoquinone, polybutene, polycarbonate, polyester, polyetherimide, polyethylene, polyethylene copolymer and modified polyethylene, Polymethane, polymethyl methacrylate, 'polymethyl valerate, poly benzene and polyphenyl sulfonate, polyphthalamide, polypropylene, polyurethane, styrene resin, Hard base resin, vinyl resin or any combination thereof. Elastomer " refers to a polymeric material that can be stretched or deformed and returned to its original shape without substantial permanent deformation. Elastomers are typically subjected to substantial elastic deformation. The elastic substrate suitable for use in the present invention at least partially comprises one or more elastomers. Exemplary elastomers suitable for use in the present invention may comprise a polymer, a copolymer, a composite or a mixture of a polymer and a copolymer. The elastomer layer refers to a layer of 3 to J - an elastomer. The elastomer layer may also include a dopant and other non-elastomeric materials. The elastomers suitable for use in the present invention may include, but are not limited to, ... i I · bio-bombs; bio-materials, benzene-based materials, maternity materials, Polystyrene, polycarbamic acid S 曰 thermoplastic elastomer, polyamine, synthetic rubber, hydrazine, polybutylene, polyisobutylene, poly(styrene-butyl bis-phenylene, olefin), polyamine I50175 .doc •29- 201042951 Phthalate, polychloroprene and polyfluorene. "Good electronic performance" and "high performance" are used equally herein, and means that the device and device components have such desirable functions as electronic signal switching and/or amplification, such as field effect mobility, threshold voltage, and on. - Off-line electronic characteristics. Exemplary transferable semiconductor devices of the present invention that exhibit good electronic performance, and optionally printable semiconductor components, can have an intrinsic field effect mobility greater than or equal to 1 〇〇 cmV sl, preferably greater than or equal to about some applications. 30WV, the nature of field effect mobility. An exemplary transistor of the present invention that exhibits poor electronic performance can have a field effect mobility greater than or equal to 6 〇 100 cm VS'. For some applications, it preferably has a device field effect greater than or equal to about 300 cm2 V" si Mobility, and for some applications, preferably has a device field effect mobility greater than or equal to about _ gamma 1. An exemplary transistor exhibiting good electronic performance of the present invention can have a threshold voltage of less than about 5 volts and/or Or greater than about ΐχΐ〇4 open_off ratio.

"Large area" means an area greater than or equal to about 36 square feet, such as the area of the receiving surface of the substrate used for device fabrication. ''Device field effect mobility' refers to the calculation of the production data corresponding to the electronic device. The field effect mobility of electron-cracking such as a transistor. μ "Young's modulus, the mechanical property of a material, device, or layer, which refers to the ratio of stress to strain for a given material. Young's modulus can be stated by: Χ strain zj, (II) 150175.doc ·30· 201042951 where E is the Young's modulus, L is flat 0, and you are the length of the 'AL system' under the applied stress. 'F is the area exerted by force and the amount of force exerted by the money. Young's modulus can also be expressed by the following equation according to the Lame constant: Ε — μ(3λ + 2μ). λ + μ, (HI) where λ and μ are the Lame constants. High Young's modulus (or "high modulus,") and low Young's modulus (or "low modulus") are pairs of relative descriptions of the magnitude of Young's modulus in a given material, layer, or device. In the present invention, the high Young's modulus is much less than the lower Young's modulus, preferably greater (10) for some applications, and about 100 times larger for other applications, and for other applications. It is best to say that it is about 1000 times larger. In the following, a number of specific details of the apparatus, device components and methods of the invention are set forth to provide a detailed description of the precise nature of the invention. However, it will be apparent to those skilled in the art that the present invention may be practiced without the specific details. The present invention provides extendable semiconductors and electronic circuits that provide good performance when extended, deflected, or otherwise deformed. In addition, the extended semiconductor and electronic circuits of this month can be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices. Figure 1 provides an atomic force micrograph showing an extensible semiconductor structure of the present invention. The extendable semiconductor component 700 includes a flexible substrate 705 (such as a polymer and/or elastomeric substrate) having a support surface 710 and a curved semiconductor structure 715 having a curved inner surface 720. In this embodiment, at least a portion of the curved inner surface 72 of the curved semiconductor structure 715 is bonded to the support surface 71 of the flexible 150175.doc -31 - 201042951 substrate 705. The curved inner surface 72A can be joined to the support surface m at selected points along the inner surface 720 or at substantially all points along the inner surface 72〇. The exemplary semiconductor structure illustrated in Figure i includes a single crystal germanium ribbon having a width equal to about 100 microns and a thickness equal to about 100 nanometers. The flexible substrate illustrated in Figure i is a PDMS substrate having a thickness of about i mm. Curved inner surface 72A has a curved configuration that includes a substantially periodic waveform that extends along one of the lengths of the strip. As shown in Figure 1, the amplitude of the chopping is about 5 nanometers and the pitch of the spikes is about micrometers. Figure 2 illustrates an atomic force micrograph providing an expanded view of a curved semiconductor structure 715 having a curved inner surface 72Q. Figure 3 shows an atomic force micrograph of an array of extensible semiconductor structures of the present invention. Analysis of the atomic force micrographs in Figure 3 shows that the curved semiconductor structures were compressed by about 127%. Figure 4 shows an optical microscopy of the extensible semiconductor structure of the present invention. The contoured shape of the curved inner surface 720 allows the curved shape (4) to be swollen or compressed without undergoing substantial mechanical//,. The structure of the 715 is changed along with the mechanical strain. The contour shape is curved, and the structure is in a direction different from the direction of the deformation axis 730: = or deformation without significant mechanical damage caused by strain or loss of performance. The curved surface of the semiconductor structure of the present invention can be mechanically, | Provide 'good == extensibility, flexibility and / or bendability) and / or good mobility ... ... A change (4) shows any contour (4) of good field effect j). The exemplary contour shape may have the following features, a plurality of convex and/or concave regions, and waves, Gaussian waves, Aries functions, square waves, and Luo; including sinusoidal wavelets, periodic waves, and no cycles 150l75.doc -32· 201042951 Period wave or multiple waveforms of any combination of these waves. Waveforms suitable for use in the present invention may vary with respect to two or three physical dimensions. Figure 5 shows an atomic force micrograph of an extensible semiconductor structure of the present invention bonded to a flexible substrate 705' having a three-dimensional relief pattern on the support surface no of the substrate. The three-dimensional relief pattern includes a recessed region 750 and an undulating feature 76〇. As shown in FIG. 5, the curved semiconductor structure 715 is bonded to the support surface 71A in the recessed region 75A and on the undulating feature 760. Figure 6 is a flow chart showing an exemplary method of fabricating an extensible semiconductor structure of the present invention. In the exemplary method, a pre-strained elastic substrate in one expanded state is provided. Pre-straining can be achieved by any method known in the art including, but not limited to, rolling and/or pre-bending the elastomeric substrate. The slant strain can also be achieved via a thermal process, such as by thermal expansion caused by raising the temperature of the elastomeric substrate. One of the advantages of pre-straining via thermal methods is that expansion along a plurality of different axes, such as orthogonal axes, can be achieved. An exemplary elastomeric substrate useful in the method of the present invention is a PDMS substrate having a thickness equal to about 1 mil. The elastic substrate can be pre-strained by expansion along a single axis or by expansion along a plurality of axes. As shown in FIG. 6, at least a portion of the inner surface of the printable semiconductor component is bonded to the outer surface of the pre-strained elastic substrate in an expanded state, and the bonding can be performed by covalent bonding between the inner surfaces of the semiconductor surface. Van der Valli is achieved by using a binder or by any combination of such methods. In an exemplary embodiment of the elastic substrate system PDMS, the support surface of the substrate 1150 175.doc -33- 201042951, which has a plurality of hydroxyl groups extending from its surface to promote ' , covalent bonding of semiconductor structures. Referring again to Figure 6, after bonding the pre-strained elastic substrate to the semiconductor structure, the elastic substrate is allowed to at least partially relax to a relaxed state. In this embodiment, the relaxation of the elastic substrate causes the inner surface of the semiconductor structure to be bent to produce a semiconductor element having a curved inner surface. As shown in FIG. 6, the manufacturing method may optionally include a second transfer step and optionally a bonding step, wherein the transferable semiconductor element 715 having the curved inner surface 72〇 is transferred from the elastic substrate to the other substrate. Preferred is a flexible substrate such as a polymer substrate. This second transfer step can be accomplished by contacting the exposed surface of the semiconductor structure 715 having the curved inner surface 72() with another receiving surface of the substrate bonded to the exposed surface of the semiconductor structure 71 5 . The bonding to the other substrate can be accomplished by any means that at least partially maintains the curved structure of the semiconductor component, including covalent bonds, bonding via van der Waals force, dipole-dipole interaction, London (1^") bond and/or hydrogen bonding. The invention also includes the use of an adhesive layer, coating and/or film provided between the exposed surface and the receiving surface of the transferable semiconductor structure. The extensible semiconductor component of the present invention can effectively integrate a large number of functional devices and device components such as transistors, diodes, lasers, s, MS, LEDS and OLEDS. It is known that rigid inorganic semiconductors have certain functional advantages. First, extended semiconductor components can be flexible and therefore less subject to structural damage caused by buckling, f-bending and/or deformation than conventional rigid bodies. :: 150175.doc -34- 201042951 The "extendable semiconductor component of the present invention, the conventional unstrained just because the curved semiconductor structure can be in a slight mechanical strain ~ to provide a curved inner surface Sex semiconductors can exhibit higher intrinsic field effect migration rates. Finally, because the extensible semiconductor components are free to expand and contract during device temperature cycling, they may provide good thermal properties. Ο ❹ 曰 shows an extendable conductor with a longitudinal alignment of a wavy configuration: an image of the columns: as shown in Figure 7, the semiconductor strips are provided with =: and supported by a single flexible rubber substrate . Figure 8 shows a cross-sectional image of a extendable conductor element of the present invention with a + conductor structure 776 supported by the flexible substrate m. The semiconductor structure 776 of Fig. 8 has an inner surface having a contour shape of a periodic wave. Also shown in Figure 8 is a semi-conductive structure -::;. The periodic wave configuration extends through an array of extendable electronic circuits, devices, and devices that have good performance when extended, flexed, or deformed. Similarly, the present invention provides an extension circuit and an electronic device, and has a support table (4) flexible substrate, the surface: such as a display-wave structure The inner surface of the curve; the device: the line contact. In the r structure arrangement, the device, the device array: at least a part of the structure of the ΐ electric tower structure, the inner surface of the trowel curve is combined with the flexibility. This aspect of the invention Device, device array: multi-component component of the integrated device component of the circuit body. In the example, the switchable circuit, device and the two-layer 150175.doc-35. 201042951 The column comprises a plurality of integrated device components, at least a portion of which has a periodic wave curve structure. In a useful embodiment of the invention, a stand-alone electronic circuit or device comprising a plurality of interconnecting components is provided. One of the inner surfaces is in contact with and at least partially bonded to the pre-strained elastic substrate in an -expanded state. The pre-strain can be achieved by any method known in the art including, but not limited to, rollers And/or pre-bending the elastic substrate and pre-straining the elastic substrate by expansion along a single-axis or by expansion along a plurality of axes. The bonding may be directly by at least a portion of the electronic circuit or device The covalent bond or van der Waals force between the surface and the pre-strained elastic substrate is achieved, or by using an adhesive or an intermediate bonding layer. The pre-strained elastic substrate is combined with the electronic circuit or device. Thereafter, the elastic substrate is allowed to at least partially relax to a bran-reinforcing relaxation, which causes the inner surface of the semiconductor structure to bend. The curvature of the inner surface of the electronic circuit or device produces a curved inner surface, which is Useful embodiments have a periodic or pro-cycle configuration. The invention includes a plurality of embodiments in which all components of the electronic device or circuit are present in a periodic or non-periodic wave group. The period of the device, the device, and the array of devices or the absence of a wave group that obeys the extension or the help of the configuration without creating large strains on the individual components of the circuits or devices. This aspect of the invention The electronic properties of the extendable electronic circuit, device and device array when in a bent, extended or deformed state. The period of the periodic wave configuration formed by the method can be varied as follows: (1) comprising the circuit or device The net thickness of the integrator of the integrated component and (9) the material including the material of the integrated device component such as Young's Money 150175.doc • 36 - 201042951 The mechanical properties of the flexural rigidity. Figure 9A shows the manufacture of the extensible thin film transistor. A flow chart of an exemplary method of arrays. As shown in Figure 9A, an array of free-formable thin film transistors is provided using the techniques of the present invention. An array of thin film transistors is exposed to the same by a dry transfer contact printing method. The inner surface of the crystal is transferred to a PDMS substrate. The exposed inner surface is then contacted with a room temperature cured pre-strained PDMS layer in an expanded state. The pre-strain 1 > 〇 1 ^ 3 layer

Subsequent π full cure combines the inner surface of the transistors with the pre-strained pDMS layer. The pre-strained PDMS layer is allowed to cool and exhibit an at least partially relaxed state. Relaxation of the PDMS layer introduces a periodic wave structure into the transistor in the array, thereby making it extendable. The illustration in Figure 9 provides an atomic force micrograph of an extensible thin film transistor array fabricated by the method. The atomic force micrograph shows a periodic wave structure that provides good electronic performance in an extended or deformed state. Figure 9B provides an extensible thin film transistor array Q in an relaxed and extended configuration. The array is extended in such a manner that a net strain of -2 G% is produced on the array without rupturing or damaging the tantalum film. It is observed that the conversion from a relaxed configuration to a strain configuration is a reversible process. Figure 叩 also provides a plot of the drain current versus the gate voltage for several potentials applied to the gate, which shows a mysterious stretchable thin film transistor in the punch! Both the relaxation and extension configurations show good performance. Example 1. A single crystal of an extensible form of a high performance electronic component for use on a rubber substrate has been fabricated from a sub-150175.doc-37-201042951 micron single crystal element configured to have a micro-scale periodic wavy geometry. Extensible form (4). When it is branched by the elastic substrate, the stone can reversibly extend and compress to the large strain and damage. The amplitude and period of the waves are changed to adapt to the deformation, thereby avoiding the flaw. Significant strain of itself. The dielectric, dopant pattern, electrode and other components directly integrated with Shi Xi produce a fully formed, high-efficiency "wave-like metal oxide semiconductor field effect transistor, Pn diode And other advances in electronic electronics that can be used to extend or compress to a similar strain level are mainly due to increased circuit operation speed and integrated density, to reduce its power consumption and (for display systems) Large-area coverage is driven by the efforts that can be made. Recently, it has been seeking to develop a method and material for forming a high-performance circuit on a non-conventional substrate having a size of φ, a paper-like display, and a flexible plastic substrate, and a flat plastic optical device. : Array: The spherical shape of the spherical sensor and the integrated shape of the robot sensor are prepared and placed on a thin substrate sheet or in the substrate layer 2, near the neutral mechanical plane, many electronic materials Can provide good bending twice. 'The strains experienced by these materials during bending are maintained at the typical level required to initiate cracking (about flexing during operation, μ > + soil field _ or reaching extreme bending levels) The device or the device that is to be covered with a complex, curved shape of the support, is a more challenging feature. In this case, especially the strain of the road can be More than almost all known electronic materials, especially those used in the p-ancient temple β Α limit. The electronic material developed on a certain sound, the cracking ^ 'This problem can be interconnected using an extendable wire I50175.doc -38- 201042951 The circuit of the electronic components (such as the electro-g-body) supported by the isolated island is avoided. This strategy can be used to obtain valuable results: it is best suited for active electronic components with relatively low coverage: We report - different methods 'The extensibility in 丨 is directly achieved with a high quality single crystal germanium film with micron-scale, "wave" geometry. These structures are not affected by wave amplitude and wavelength changes. Adapt to large compression and tensile strains through potentially damaging strains in the materials themselves.

The extension of the wavy "Shixi component with dielectric, dopant pattern and thin metal film integration results in high performance, extendable electronics. Fig. 10 shows a manufacturing sequence of a corrugated single crystal ruthenium tape on an elastomer (i.e., rubber) substrate. The first step (top box) involves photolithography to define a resist layer on a germanium (s〇i) crystal circle, followed by etching to remove the exposed portion of the top germanium. The resist layer was removed with acetone and then the buried Si 2 layer was etched with concentrated hydrofluoric acid to release the strips from the underlying germanium substrate. The ends of the strips are attached to the wafer to prevent it from being washed away in the etchant. The width of the anti-surname lines (5-5 0 μηι) and the length (about 15 mm) define the dimensions of the bands. The thickness of the top crucible (2〇_32〇 ηιη) on the SOI wafer defines the strip thickness. In the next step (middle frame), a flat elastomeric substrate (poly(dimercaptodecane), PDMS; 1-3 mm thick) is elastically stretched and then brought into contact with the ribbon. Peeling the PDMS causes the strips to leave the wafer and bond the strips to the PDMS surface. Releasing the strain in the PDMS (i.e., pre-strain) results in surface deformation that causes well-defined corrugations on the surface of the crucible and the PDMS. (Figs. UA and 11B) These undulating contour periods are between 5 and 50 μηι and have amplitudes between 1 〇〇 nm and 1.5 μπι (depending on the thickness of 150175.doc -39- 201042951 and pre-straining in the PDMS) The sinusoid of the size (top box, Figure 11C). For a given system, the period and amplitude of the waves are within about 5% over a large area (several cm). The smooth morphology of the pDMs between the bands and the absence of correlation in the waveforms of the adjacent bands indicate that the bands are not strongly mechanically coupled. Figure 11C (bottom frame) shows the micro-Raman measurement of the 81 spikes measured as a function of the distance along one of the undulating bands. These results provide an understanding of the stress distribution. The nature of this static wavy configuration is consistent with the non-linear analysis of the initial warp geometry in a uniform, thin, high modulus layer on a half infinitely low modulus support: —7th A0=hpil-1 (i) 0.52

E 2/3

PDMS PDMS, the critical strain of the ridge, the level of the ε system pre-deformation, the wavelength and the amplitude of the system. The cypress ratio is ν, the Young's modulus is Ε, and the subscripts refer to the properties of si or pDMS. The thickness of 矽 is h. Here are a number of features that are fabricated into wavy structures. For example, Figure 展示 shows that when the pre-strain value is fixed (about 9% of this data), the wavelength and amplitude are linearly dependent on the Si thickness. The wavelength does not depend on the level of the pre-strain (Figure 12). In addition, the calculation of the literature values (ESi-13〇Gpa, EPDMS=2MPa, vsi=0.27, vPDMS=〇.48) using the mechanical properties of Si&PDMS yields approximately 1% of the measured value (maximum deviation) The amplitude and wavelength of the range can be calculated from the ratio of the effective length of the bands (determined by the wavelength) to the actual length of 150175.doc •40- 201042951 (determined by the surface distance measured by AFM), and A value approximately equal to the pre-strain in the PDMS is generated (for pre-strain up to about 35%). The peak of the strain in Shi Xi itself (meaning the maximum value) (I call it Shi Xi strain) is the radius of curvature of the band at the limit of the wave according to M/2 (K-curvature) in the strain zone. It is estimated that the equipotential presence and critical strain (about 0.03% for the case herein) in these strain zones is small compared to the strain peak associated with bending. For the data of Fig. u, the peak value of these Shishi strains is about 〇.36 (±0.08)%' which is more than twice the strain of the belt. This strain 〇 is the phase (4) (4) 3 for all strip thicknesses given a pre-strain. The resulting mechanical advantage (where the Shishi strain peak is large and the force is strained) is critical to achieving stretchability. We have observed that warped films have also been observed in metals and dielectrics that are either evaporated or spin-coated onto pDMs (as opposed to preformed, transferred single crystal elements and devices as described herein). The dynamic response of the wavy structures to compression and tensile strain applied to the elastomeric substrate after manufacture is of the utmost importance to the extendable electronics. To reveal the mechanism of this enthalpy process, when force is applied to the PDMS to compress or extend 1>]0"8 in a direction parallel to the long dimension of the bands, we measure the geometry of the wavy Si band by AFM. Shape. Due to the cypress effect, this force produces strain along the zones and perpendicular thereto. These vertical strains primarily cause deformation of the PDMS in the region between the zones. The strain of the strip is adapted by the change in the structure of the waves. The three-dimensional height image and surface profile in Figure 14A exhibit representative compression, unstressed, and extended states (collected from slightly different locations on the sample). In these and other instances, the strips maintain their sinusoidal shape (I50175.doc • 41 - 201042951 lines in the right frame of Figure 14A) during deformation, wherein approximately half of the wave structure is located between the bands The area defines the unstressed position of the PDMS surface (Fig. 15). Fig. 14B shows the wavelength and amplitude of the strain applied to the compression (negative) and tensile (positive) of the unstressed state (zero). This information corresponds to every point A large number (>5〇) with the collected average AFM measurement results. The applied strain is determined by the measured end-to-end dimensional change of the Pdms substrate. Direct surface measurement by AFm along with the sinusoidal waveform The estimated perimeter integral shows the strain applied equal to the strain measured here (Figure 16). (Small amplitude sustained at the tensile strain greater than the pre-strain minus the critical strain (&lt The ;5 〇nm) wave can be caused by a slight slip of Si during the initial warping process. The peak strain and band strain calculated in this small (or zero) amplitude region are lower than the actual value.) Interestingly, The results indicate that the undulations have two different physical responses to the applied strain. In a state of tension, the waves evolve in a non-intuitive manner: the wavelength does not change significantly with the applied strain, and thus The post-mechanism is consistent. Conversely, the change in amplitude adapts to the strain. In this state, the 矽 strain becomes smaller as the pDMS is extended; when the applied strain is equal to the pre-strain it reaches ~〇%. Conversely, when compressed, along with ◎ Increase the applied strain, the wavelength decreases and the amplitude increases. This mechanical response is similar to the mechanical response of an accordion bellows, which is essentially different from the characteristics of the tension. During compression, due to peaks and troughs The radius of curvature is reduced. The Shishi strain increases with the strain applied. However, the rate and magnitude of the increase of the Shishi strain are much lower than the strain, as shown in Fig. 14B. This mechanism makes the extensibility possible. The complete response in the strain range consistent with the wavy geometry can be obtained by giving the equation 150517.doc -42· 201042951 the value of the wavelength λ in the initial ridge state λ0 and the dependence of the strain applied. Qualitative description: λ={^ For stretching _U(1+. (d)) For compression, for example, this tension/compression asymmetry can be produced by a slight reversible interval between the PDMS and the rising region of Si formed during compression. For this case, as well as for systems that do not exhibit this asymmetrical nature, the wave amplitude A of the tension and compression is given by a single statement valid for moderate strain (<1〇-15%):

S applied

(3) Where is the value corresponding to the initial ridge state. As shown in Figure 4A, these statements are obtained consistent with the number of experiments without any parameter fit. When the undulation of the tensile/compressive strain is maintained, the 矽 strain peak is controlled by the bending condition and is given by (33)

= 2sc

* applied (4) This is in good agreement with the strain measured by curvature in Figure 14B. (See also Figure 18). This analytical statement helps define the range of strains that the system can withstand without breaking the raft. For helium, a pre-strain of 9%, if the shatter-loss effect is assumed to be about 2% (for compression or stretching), the range is -27% t〇 2.9%. Controlling the level of pre-strain allows this strain range (ie close to 30%) to balance the desired degree of compression and tensile deformation. For example, a 3.5% pre-strain (the maximum value checked) yields a range of _24% 仂 55% of the range 150175.doc -43- 201042951. We have noticed that these calculations assume that the strain applied even at extreme deformation levels is equal to the strain. Experimentally, we have found that these estimates are often exceeded due to the ability to adapt the strain between the end materials of the belts and the belts so that the applied strain is not completely transferred to the PDMS of the belts. .

We have established functionality and extendability by including additional steps in the fabrication sequence (Fig. 10, top box) to define patterns, thin metal contacts and dielectric layers of dopants in germanium using conventional processing techniques. Device. The two and three terminal devices, the diodes and the transistors fabricated in this manner are respectively provided with

The basic building block of the advanced functional circuit. The #integrated tape device is first separated from the SOI to an undeformed ugly 8 plate and then to a pre-strained PDMS substrate for a dual transfer process to create a wavy device with exposed metal contacts for probing . Figures 17A and nB show the optical ~ image and electrical response of the _ extensible pn junction diode applied to various levels of PDMS. We have found no systematic changes in the spread of data in the electrical properties of devices with extension or compression. The deviations in these curves are primarily due to changes in the quality of the probe contacts. These splicing diodes can be used as detectors (in opposite bias states) or as photovoltaic devices in addition to conventional rectifying devices. The photocurrent density is about 35 mA/em in the reverse bias of about [V]. The forward biased 'short current density and open circuit current are about 17 mA/em2 and Q 2 v, respectively, which produces a fill factor of (3). The shape of the response is consistent with the modeling (solid line in Figure 17B). The nature of the device does not change significantly even after about _ compression, extension and release cycles. 19) _ 17C exhibits no-extensible, wavy Schottky barrier metal 150175.doc -44 - 201042951 Oxide semiconductor field effect electricity Current-voltage characteristics of a crystal (M〇SFET), which is a thin layer of thermal Si〇2 by a procedure similar to that used for a pn diode and by a gate dielectric (33) (4〇nm) formation. The device parameters extracted from the electrical measurements of this wavy transistor (linear range mobility of approximately 100 cm2/Vs (possibly limited to contacts), threshold voltage approx. _3 v) can be used with the same processing conditions in SOI The device parameters of the devices formed on the wafer are compared. (Figures 20 and 21). As in pn diodes, such wavy electromorphs can reversibly extend and compress to large strain levels without damaging the devices or 显 significantly altering electrical properties. In the diode and the transistor, the deformation of the PDMS other than the end of the devices causes strain (device) strain that is less than the applied change. The overall extensibility is caused by the combined effect of device extensibility and the opening of these types of pDMs. At compressive strains greater than the compressive strain examined here, PDMS tends to bend in a manner that makes detection difficult. At greater tensile strains, depending on the thickness of the crucible, the length of the strip, and the strength of the bond between the stone and the PDMS, the strips are broken, or slipped and remain intact. 〇 These extendable MOSFETs and pn diodes represent only two of the many types of "waves" electronic devices that can be formed. The complete circuit sheet or web can also be structured into a uniaxial or biaxial extendable wavy geometry. In addition to the unique mechanical properties of the wavy device, the combination of strain and electronic properties that can occur in many semiconductors also provides a device structure that can be designed to take advantage of mechanically adjustable, periodic variations in strain to achieve an unusual electronic response. chance. Materials and Methods 150175.doc • 45- 201042951 Sample Preparation: Si (20, SiO 2 (145 nm, 145 nm, 200 nm, 400 nm, 400 nm, or 1 μηη thickness) on a Si substrate (Soitec) On-insulator (SOI) wafers consisting of 50, 100, 205, 290 or 320 nm thickness. In one case, we used an SOI wafer of Si (about 2.5 μm thick) and SiO 2 (about 1.5 μm thick) on Si (Shin-Etsu). In all cases, the top Si layer doped with boron (p-type) or phosphorous (n-type) has a resistivity between 5 and 20 Hem. The top Si of these SOI wafers is patterned with a photoresist (AZ 52 14 photoresist, Karl Suss MJB-3 contact mask aligner) and reactive ion etching (RIE) to define the Si band (5~ 50 μπι wide, 15 mm long) (PlasmaTherm RIE, SF6 40 sccm, 50 mTorr, 100 W). The 8 丨〇 2 layer was removed by undercut etching in HF (49%), which was mainly determined by the width of the Si band. The lateral etch rate is typically 2 to 3 μηη/min. Preparation of poly(dimethyloxane) by mixing the substrate with a curing agent in a weight ratio of 丨〇: 1 and curing at 70 ° C for > 2 hours or at room temperature for > 12 hours (PDMS) ) A board of elastomer (Sylgard 184, Dow Corning). These PDMS plates (thickness of 1 to 3 mm) are conformally contacted with Si on the etched SOI wafer to create the wavy structures. Any method of establishing controlled expansion of the PDMS prior to this contact, followed by shrinkage after removal from the wafer, can be used. We check three different technologies. In the first technique, the pre-strain is established for mechanical rolling of PDMS2 after contacting the SOI substrate. Although the wavy structure can be formed in this manner', it tends to have a non-uniform wave period and amplitude. In the second technique, the PDMS (thermal expansion coefficient = 3 1χ1〇_4 KI} is heated to 3 (Γ with a temperature of 150175.doc -46 - 201042951 and then between 18〇艽 and then at 18自) The SOI is cooled after it is removed, which produces a wavy Si structure with good uniformity over a large area in a highly reproducible manner. In this way, we accurately control the pre-strain in PDMS by changing the temperature. Level (Figure 12). The third method uses PDMS that is extended with a mechanical table prior to contact with the SOI and then physically released after removal. Similar to thermal methods, this method allows for good uniformity and reproducibility. However, it is more difficult to finely adjust the pre-strain level than the thermal method. For devices such as pn junction diodes and transistors, electron beam evaporation Te (Temescal BJD1800) and photolithographic patterning (via etching or The metal layer (Al, Cr, Au) acts as a contact and a gate. Spin-on dopant (SOD) will be applied (for p-type, B-75X, Honeywell, USA; for n-type, Ρ509, Filmtronics, USA) for doping the anthracene tape. First, the SOD material is spin coated (4000 Rpm, 20 s) onto the pre-patterned SOI wafer. A cerium oxide layer (300 nm) prepared by plasma enhanced chemical vapor deposition (PECVD) (PlasmaTherm) was used as the mask for the SOD. After heating for 10 seconds at °C, a 6:1 buffered oxide etchant (BOE) is used to etch away the SOD and mask layers on the SOI wafer. For the transistor device, thermal growth (by high purity in the furnace) Oxygen is dry-oxidized to a thickness between 25 nm and 45 nm, and 1100 ° C, 10 to 20 minutes) of erbium oxide provides a gate dielectric. After all device processing steps on the SOI substrate are completed, A photoresist (AZ52 14 or Shipley S181 8) is used to cover the Si tape (usually 50 μm wide, 15 mm long) with an integrated device structure to protect the device layer during HF etching of the underlying SiO 2 . After the photoresist layer, a flat PDMS (70 ° C, > 4 hour) plate without any pre-strain was used to remove the tape device from the SOI substrate in the flat geometry 150175.doc -47 - 201042951. The partially cured pDMS (at room temperature > 12 hours after mixing the substrate with the curing agent) is then used. Contacting the 荨si tape device on the fully cured PDMS board. Finishing the curing of the partially cured pDMs (by heating at 70 ° C), then removing the plate, transferring the devices from the first PDMS plate to The new pdmS substrate. The shrinkage associated with cooling to room temperature establishes a pre-strain that causes the removal and release to establish a wavy device while the electrodes are exposed for detection. Measurement: An atomic force micrograph (AFM) (DI_31〇〇, Veec〇) was used to accurately measure the properties of the waves (wavelength, amplitude). From the acquired image, the cross-sectional profile along the undulating S i is measured and statistically analyzed. The mechanical and electrical response of the wavy Si/PDMS was measured using a self-contained extension station and AFM and a semiconductor parameter analyzer (Agiient, 5155c). Raman measurements were performed using a J〇bin γν〇η HR 8〇〇 spectral analyzer using 632.8 nm light from a He-Ne laser. The Raman spectrum is measured along the wavy Si at intervals of 1 μm, wherein the focus is adjusted at each position along the length of the structures to maximize the signal. The measured spectrum is fitted by the Loren subfunction to locate the peak wavenumber. Due to the slight dependence of the peak wavenumber on the focus position of the microscope, the Raman results only provide a qualitative understanding of the stress distribution. Calculation of the length of the line, the strain of the belt and the strain of the enthalpy: The results of these experiments are not shown. For the range of materials and geometric shapes explored here, the shape of the wavy si can be accurately approximated by a simple sine function (ie, y=Asin( Kx) (k=27l/?i)) is expressed. Then calculate the length of the fence. |λ—l| 卜 Use ε_ λ to calculate the strain of the wavy Si. The peak value of the Shixi strain is generated at the peaks and troughs of the equal waves and is used to calculate, where h is 150175.doc -48· 201042951

The thickness of Si, and the radius of curvature at the peak or trough of the singularity, which is given by y', where η is an integer and 丫" 丫 丫 丫 丫 导 导 导 H H H H H 石 石 石 石 石 石 石 石 石Peak by epeak __ Ail

Si = —p—is given. Figure 12 shows the wavelength as a function of the temperature at which the pre-strain is established. As shown in Fig. 13, the strain peak is independent of the Si thickness due to the wave amplitude and the linear dependence of the wavelength on the thickness /2, λ~; Figure 15 shows that the wavy structure contains the surface of the pDMs relative to the bands

The horizontal plane is displaced almost upwards and downwards. The Shixi belt strain is equal to the strain applied by the system examined here (Figure 16). One accordion bellows model: When 矽 can be separated from PDMS during compression, the system is dominated by the accordion bellows mechanism rather than the ribbing mechanism. The wavelength of the applied compressive strain (sapplied) in the case of the bellows is (1, where λ is the wavelength in the unstrained configuration, as described by the equation. Because the length of the encircling line is before the compressive strain and After approximately the same, we can use the following relationship to determine the wave amplitude Α.

A0sin~x . λΛ 1 + A sin 2π λ〇(1 + εφ_) x dx This equation has an asymptotic solution α = 7ϊ^^|α#-Ιι2^ι. At small compressive strains, this equation is reduced to equation (3), which is also applicable to the case where the separation of Si and POMS is not possible, and the system follows the warping mechanism. The 矽 strain peak is given by 2ε, —c pre applied ^applied 7 . For the medium compressive strain, this statement is approximately the same as equation (4). Within the limits of the applied medium 150175.doc •49- 201042951 strain, similar to the wave amplitude, the 矽 strain peak has a similar functional form for the bellows model and the warping model. Figure 18 shows the strain peaks calculated according to the above formula and according to equation (4). Characterization of the device · A semiconductor parameter analyzer (Agilent, 5155 〇 and a conventional probe station for the undulating pn junction diode and the electrical characteristic of the transistor Pn-pole body light response at about 1 W Measurement under illumination of /cm2, such as by an optical power meter (〇phir 〇ptr〇nics, Laser p〇wer

Meter AN/2) to measure. We use mechanical tables to measure these devices during and after extension and compression. As a way to explore the reversibility of the process, we measured three different pns under ambient light before and after about 100 compressions (to about 5% strain), extensions (to about 5% strain), and after the release cycle. Polar body. Figure 19 shows no results. Figures 2G and 21 show images, schematic descriptions, and device measurements from a wavy transistor. Example 2: The ribbed and wavy GaAs strips used in high performance electronic circuits on elastomeric substrates are manufactured in a submicron range with well defined "wavy" and/or warp geometry Crystal GaAs tape. The resulting structure on the surface of an elastomeric substrate or embedded in an elastomeric substrate exhibits a reversible extensibility and compressibility of >1% strain, which is more than ten times greater than the reversible extension and compressive strain of GaAs itself. High performance extendable electronics (e.g., metal semiconductor field effect transistors) can be achieved by integrating ohmic and Schottky contacts on the straps of such structures. Such electronic systems can be used alone or in combination with similar designs, dielectrics, and/or metallic materials to form for high frequency operation and extensibility, extreme flexibility, or seldom. 150175.doc - 50- 201042951 The circuit of the application of the ability of the surface of the miscellaneous curve shape to match. In traditional microelectronics, performance capabilities are measured primarily based on speed, power efficiency, and integration levels. The other steps in the electronic device form are driven by the ability to integrate or cover a large area on a non-conventional substrate (e.g., low cost plastic, box, paper). For example, a new form of X-ray medical diagnosis can be achieved by a large area imager that isomorphously wraps the body to digitally image the desired tissue. It can be displayed on a variety of surfaces and surface shapes! Wall-sized displays or sensors provide new technologies for building S-meters. Various materials including small organic molecules, polymers, amorphous slabs, polycrystalline slabs, single crystal sillimanite wires, and microstructured bands have been explored to serve as thin film electrons that can support these and other applications. The semiconductor of the device is f. These materials make it possible to have a mobility that spans a wide range (i.e., from 10_5 to 500 cm /V's) and a mechanically bendable film shape on a flexible substrate. Applications requiring high speed operation such as Large Aperture Interferometric Synthetic Aperture Radar (InSAR) and Radio Frequency (RF) monitoring systems require semiconductors with very high mobility, such as GaAs, or InP. The fragility of single crystal composite semiconductors creates a number of manufacturing challenges that must be overcome in order to produce high speed, flexible transistors having such semiconductors. I use self-identity. A practical method is to create a printed GaAs line array on a die wafer to construct a metal semiconductor field effect transistor (MESFET) on a plastic substrate. These devices exhibit good mechanical flexibility and fT. near 2 GHz even in medium scale devices (e.g., micro-gate lengths). This example shows a GaAs v based MESFET (as opposed to a wire arrangement) designed to have a special geometry that not only provides bendability but also provides a substantial yield point (about 2%) that significantly exceeds the GaAs itself 150175.doc 51 201042951 Mechanical extensibility of strain level (about 1%). The resulting type of extensible high-performance electronic system provides extremely high levels of flexibility and the ability to integrate contours with curved surfaces. This QaAs system (IV) expands what we have described in four important ways, wavy "Shi Xi: (1) it shows GaAs (GaAs is more mechanically weaker than Si under practical conditions) (ii) its introduction a new "face, geometry, which can be used to achieve extensibility in conjunction with the previously described "wave" configuration or independent of the previously described "wavy" configuration, (m) A new type of extendable device (meaning MESFET) is achieved, and (iv) exhibits an extension that extends over a larger range and has greater symmetry in compression/tensioning than the stone eve. Description of the steps for fabricating an extensible GaAs ribbon on an elastomeric substrate made of poly(dimethyloxane) (pDMs) produced by a high quality GaAs bulk wafer having a plurality of epitaxial layers The wafer is grown by growing a 200 thick A1As layer on a (100) semi-insulating GaAs (Si-GaAS) wafer, followed by sequentially depositing a thickness of 150 nm with a thickness of 783 and a thickness of 120 nm. The thickness and the concentration of 4xl0i7 cm-3 carrier are prepared by doping the n-type layer, which is defined by parallel to the (0 Π) crystal direction. The pattern of the resist line acts as a mask for the chemical etching of the epitaxial layer (including GaAs and AlAs). The anisotropic etch of H3p〇4 and H2〇2 is used to isolate the top layer to have a photoresist defined by the photoresist. Length and orientation, and individual strips having sidewalls at an acute angle relative to the surface of the wafer. After the anisotropic etch, the photoresist is removed and the wafer is then immersed in an ethanol solution of HF (ethanol and 49 The volume ratio of % aqueous HF is 2:1) The A1As layer and the release band - GaAs/Sl-GaAs can be removed. In this step, the use of ethanol instead of water reduces the rupture that can occur in such fragile zones due to the effect of the capillary force during drying. The lower surface tension of ethanol compared to water also minimizes the dry-induced disorder in the spatial layout of the GaAs ribbons. In the next step, the day-to-day® with the released GaAs tape, the 曰 曰 South belt, is brought into contact with the surface of the 延伸 一 of a pre-stretched PDMS plate, so that the bands are aligned in the extending direction. In this situation, Van Valli dominates the interaction between Sonic S_GaAs. For conditions requiring stronger interaction strength, a thin layer will be deposited onto the GaAs and the pDMs will be exposed to UV-induced ozone shortly before contact (think, air 4 products). Ozone produces a -Si-OH group on the surface of the pDMS which, upon contact, reacts with the surface of the Si?2 to form a bridged alkane-Si-O-Si- linkage. Due to the geometry of the sides of the strips, the deposited Si〇2 is discontinuous at the edges of each strip. For both weak and strong bonding procedures, stripping the PDMS from the mother wafer transfers all of the tape to the surface of the PDMS. Prestrain relaxation in the PDMS results in spontaneous formation of large scale ridges and/or sinusoidal structures along the zones. The geometry of the bands greatly depends on the pre-strain applied to the seal (defined by AZ/L), the interaction between the PDMS and the belt, and the flexural rigidity of the belts. For the band studied here, the small pre-strain (<2%) produces a highly sinusoidal "wave" with relatively small wavelengths and amplitudes for both strong and weak interactions (Figure 22 right border, middle frame) These geometries in GaAs are similar to those reported for Si. Higher pre-strains (e.g., up to about 15°/.) can be applied to create similar types of waves where there is a presence between the strips and the substrate. Strong combination. Under the condition of weak interaction intensity and large pre-strain, the geometry of different types 150175.doc -53- 201042951 composed of non-period with relatively large amplitude and width is formed (the right border of Fig. 22) , the top box). In addition, our research results show that neither type of structure (warping and wave) can coexist in a single band, and its flexural rigidity varies along its length (eg, due to thickness variations associated with device structure). Figure 23 shows a 270 nm (including "-GaAs and Si-GaAs layer" thickness and 丨〇〇μηι formed by a strong bond between PDMS (about 5 mm thickness) and the strip (all discussed in this example) Several micrographs of a wavy GaAs strip having a width of 1 〇〇 μηη width. Using 2_nm^ and -nm Si〇2 layers on 仏^, the fabrication follows a strong binding procedure. A biaxial pre-expansion of about 5% (calculated from the PDMSi thermal response) was established in the PDMS by thermal expansion (heating to 9 〇t > c in an oven) shortly before or during the bonding. This heating also accelerates the formation of interfacial aerobic bonds. After transferring the GaAs tape, the PDMS was cooled to room temperature (about 27. 〇, thereby releasing the pre-strain. Box A, B & C of Figure 23 shows optical microscopy, electron scanning microscopy (SEM), and atomic force microscopy (AFM, respectively). Images collected from the same sample. These images show the formation of periodic, wavy structures in these GaAS bands. Estimate the cutting line from the AFM image (Fig. 23D) (Figures 23E and 23〇 for quantitative analysis) 6 Hz equal wave. The line parallel to the longitudinal direction of the band clearly shows the periodic, wavy contour consistent with the computational fit of the sine wave (dashed line in Figure 23E). This result is in contrast to the semi-infinite low modulus support. The non-fourth analysis of the initial light-edge geometry in the uniform, thin, high-modulus layer on the object was agreed. The peak-to-peak amplitude and wavelength associated with this function were determined to be 2 56 and 35.0 μηη, respectively. The ratio between the horizontal distance between the two peaks on the stamp (ie the wavelength) and the actual line length between the peaks (ie 150175.doc • 54- 201042951 surface distance measured by AFM) Calculated strain (I call it Strain) produces a smaller value (ie, 13%) than the pre-modification change in the PDMS. This difference can be attributed to the low shear modulus of PDMS and the island associated with the length of the GaAs strip that is shorter than the length of the PdmS substrate. The surface strain of the GaAs strip at the peaks and troughs (which I call the maximum GaAs strain) is obtained from the thickness of the strip and the radius of curvature of the peaks or troughs of the waves according to !^/2 (where κ is the curvature). In this estimation, because the PDMS can be regarded as a modulus and a lower half-infinite support compared to the modulus of 5 (Young's modulus of GaAs: 85.5 GPa to Young's modulus of PDMS: 2 MPa ), so the direct effect of strain on GaAs in the PDMS stamp can be ignored. For the data in Figure 23E, the maximum GaAs strain is about 0.62%, which is more than twice the band strain (meaning 丨3%). The GaAs tape provides extensibility, and the physical properties are similar to those of the wavy. As shown in Fig. 23F, the peaks and trough regions of the bands are respectively higher than the contour of the surface of the original PDMS (ie, the unbanded region) (green) The right side of the curve is more sturdy and lower. The result is implied as a separate wave As a result of the upward and downward forces applied to the PDMS by the GaAs strips in the troughs, the PDMS under the armpits adopts a wavy profile. The 1>1 near the peaks of the waves is difficult to estimate directly. It is suspected that in addition to the upward deformation, there is also lateral necking caused by the cypress effect. It can be extended and compressed by applying strain to the PDMS (so-called applied strain is expressed as positive for extension and negative for compression) The undulations on the printer. The illustrations of Figures 23a and 23B show an image of the strip deformed to its original flat geometry when a relatively small extension strain (i.e., about 5% 5%) is applied. Further extensions transfer more tension strain to the flat GaAs strip, causing damage to the strip when the excess strain 150175.doc • 55- 201042951 reaches the strain strain of GaAs. The compressive strain applied to the substrate reduces the wavelength of the undulating bands and increases the amplitude of the undulating bands. Compression failure occurs when the bending strain at the peak (and trough) exceeds the failure strain. This varies with the wavelength of the strain as observed in previous observations and is different from the prediction of wavelength invariance derived from the ideal model. The extensibility of the wavy GaAs ribbon can be improved by increasing the pre-strain applied to the PDMS by using a mechanical stage (as opposed to thermal expansion). For example, transferring a GaAs band with a SiCh layer onto a surface of a PDMS stamp with a 78% pre-strain produces a wavy band without any observable rupture in GaAs (Fig. 24A). In this case, the bending strain at the peak is estimated to be about 12%, which is lower than the failure strain of GaAs (that is, about 2%). Similar to this low pre-strain condition, the undulating bands operate like an accordion when extending and compressing the system: wavelength and amplitude changes to accommodate the applied strain. As shown in Fig. 24A, the wavelengths increase with tensile strain until the bands become flat and decrease as the compressive strain decreases until the bands are broken. These deformations are fully reversible and do not include any measurable slip of GaAs on the PDMS. Compared to the slightly asymmetrical nature observed in the si band with weak bond and much lower pre-strain, the wavelength varies linearly with compression applied in compression and stretching (see black line in Figure 24B). And in the practical application, it may be useful to encapsulate the same in such a way as to maintain the extensibility of the device. As a simple possibility, we are in, for example, Figure 24A. The pDMs prepolymer is cast and cured on the sample shown to embed the ribbons into the PDMS. The embedded system exhibits mechanical properties similar to those of the unembedded system, meaning that the wavelength is extended when the system is extended ^ 150175.doc .56· 201042951 Reduces the wavelength when compressing the system (red line and symbol in Figure 24B). Due to the shrinkage of the cured second PDMS layer, a moderate amount of additional strain (about i%) is produced. This strain results in the wavelength of the wavy bands. A slight reduction, and thus a slight extension of the range of extensibility. Figure 24B shows this difference. In general, a system produced with a pre-strain of about 7.8 ° / can be extended or compressed to a strain of up to about 1% Not in GaAs The damage can be observed. The corrugated GaAs strip on the PDMS substrate can be used to fabricate high performance electronic devices, such as MESFETs, whose electrodes are formed via metallization and processing on the wafer prior to transfer to PDMS. The metal layers change the flexural rigidity of the strips in a spatially dependent manner. Figure 25A shows the ohmic strips (source and drain) and Schott after transfer to a PDMS substrate having a pre-strain of about 1.9%. The base contact (gate) is integrated with the 8 8 band. The ohmic contacts are composed of a metal stack including AuGe (70 nm) / Ni (10 nm) / Au (70 nm), the metal stack is via micro The shadow-defining mask and the quartz wafer in a flowing A are sequentially annealed at a high temperature (that is, 45 〇〇c for 1) on the initial wafer. These ohmic sections have 500 μm The length between two adjacent ohmic contacts is 5〇〇μηι (meaning channel length). The Schottky contact with a length of 240 μη (meaning the gate length) is based on light micro The mask of the shadow design directly deposits the 75-nm Cr layer and 7 via electron beam evaporation. The 5-nm Au layer is produced. The electrodes have a width equal to the width of the GaAs strips, that is, 1 〇〇μηι; its relatively large size facilitates detection. The device can be significantly reduced in size to achieve enhanced device Performance. As shown in Figure 25, these extendable MESFETs exhibit short-range periodic waves only in the area without electrodes. The absence of waves in the thicker region 150175.doc -57· 201042951 is mainly attributed to The increased flexural rigidity of the regions of the additional thickness associated with the metal may be greater than about 3 by use. /. The pre-strain starts the periodic wave in a thicker region. However, under such conditions, the bands tend to rupture at the edges of the metal electrodes due to critical enthalpy and/or high strain peaks near the edges of the metal electrodes. This failure mode limits extensibility. To overcome this limitation, we have reduced the strength of the interaction between the MESFET and the PDMS by eliminating the siloxane coupling. For these examples, the pre-strain of > 3% produces a large, non-periodic ridge with a relatively large width and amplitude due to the detachment of the elements from the PDMS surface. Figure 25 is a system of this type (e.g., prepared with a pre-strain of about 7 〇/〇) in which the large ridges are formed in the thinner regions of the devices. As indicated by the vertical lines, the s-segmental detachment appears to extend slightly to a thicker region with ohmic stripes. The change in contrast along the band is due to reflection and refraction associated with light passing through the GaAs segment of the curve. The SEM image (Fig. 25C) clearly shows the formation of curved ridges and flat, unstressed PDMS. These ridges show an asymmetrical profile with the tail extending to the side with ohmic contacts (as indicated by the red curve). This asymmetry can be attributed to the unequal lengths of the ohmic strips and Schottky contacts of the individual transistors (500 μηη vs. 240 μηη). Such a warped MESFET can be extended to its original flat state by an applied strain between about 6% and about 7% (Fig. 25D). However, the system shown in Figure 25B due to weak bond' compression results in a greater detachment from the PDMS surface. Embedding these devices into PDMS according to the previously described procedures eliminates such uncontrolled nature. Figure 25B shows the system 'where the liquid PDMS precursor fills the gap below the ridges of the I50175.doc -58- 201042951. The fully enclosed pdms define the bands and prevent them from slipping and escaping. The intercepting device can reversibly extend and compress to strains of up to about 6 〇/〇 without damaging the belts. It is worth noting that when the embedded system is compressed by -5.83% (the top frame of Fig. 25E), a periodic small wavy shape is formed in the region having the metal electrode and a new wavy is formed in the ridge region. The formation of these new wavelets (in combination with these large ridges) enhances compressibility. Extending the system forces the slanted regions to compress and extend the PDMS in such a manner that the ridges are flattened, thereby elongating the extent of the ridges (the bottom frame of Figure ME). These results indicate that an embedded device with large ridges (distinct geometry and wavy) represents a combination of wavy methods or independent of the wavy method for achieving extensibility and compressibility. Promising approach. The performance of the warp device can be estimated by directly detecting the current from the source to the drain. Figure 26A shows a GaAs tape device fabricated on a wafer, picked up using a flat pDMS stamp and transferred to a pre-strained pDMS substrate with 47%. In this configuration, the metal electrode is exposed to air for electricity

probe. After relaxing the pre-stretched PDMS to a strain of 3.4%, a periodic wavelet is formed in the thin region of the MESFET (Fig. 26A: first frame from the top). When the pre-stretched PDMS stamp is completely relaxed, the wavelets in a section of pure GaAs are merged into individual large ridges (Fig. 26A: third frame from the top). By applying an elongation strain of 4.7%, the warp devices can be extended to their flat state (Fig. 26A: bottom frame). The IV curves of the same device with the applied strain of 〇.〇% (Fig. 26A: third box from the top) and 47% (Fig. 26A: bottom frame) are plotted in red and black, respectively, in Fig. 26B 150175.doc • 59 · 201042951 Medium These results indicate that the current from the source to the drain of the warped MESFET on the PDMS substrate can be well regulated by the voltage applied to the gate, and the applied extension strain has only a minor effect on device performance. In summary, this example reveals a "turtle" used to form "勉" and "wavelike" GaAs ribbons on PDMS elastomer substrates and to form funnel-in PDMS elastomer substrates. The method of wavy "GaAs strips. The geometric configuration of these strips depends on the pre-strain level used in the manufacturing, the strength of the interaction between the PDMS and the strip, and the thickness and type of material used. The geometry of the rib and wavy band is adjusted in a manner that accommodates the applied strain without transferring the strain to the material itself, the rib multilayer and the wavy and wavy shape of the fully formed MESFET device The tape exhibits a high level of compressibility/extensibility. Successfully achieves a level of mechanical extensibility in a material that is inherently weak in GaAs (and as a result, other attractive features such as extreme bendability) Mechanical properties) provide a similar strategy for a wide range of other material types. Thermally induced pre-strain is attributed to the thermal expansion of the PDMS stamp, which has a body line of ~=3.1Χ1(Γ4 μηι/μΓηΛ: Thermal expansion coefficient. On the other hand, the thermal expansion coefficient of GaAs is only 5 73χ1〇-6μιη/μπιΓ (: Therefore, for samples prepared at 90 C and cooled to 27 ° C, the pre-strain on the PDMS (relative GaAs band) is based on Δα/: χΔΓ=(3 1χ1〇.4_5 73χ1〇-6)χ(9〇_ 2 7) = 1 · 9 % to measure. Method · Purchase user-designed epitaxial from IQE (Bethleon, ΡΑ) Layer GaAs wafer. The lithography process uses eight 2 photoresists (ie ΑΖ 5214 and AZ nLOF 2020 for positive and negative imaging respectively). 150175.doc -60- 201042951 etchant (4 mL) cooled in ice water bath Anisotropically etched a GaAS wafer with a photoresist mask pattern in H3P04 (85 wt%), 52 mL H2〇2 (3 wt%), and 48 mL deionized water. Dilute HF solution with ethanol ( Volume ratio 1:2) (Fisher®. Chemica (4) dissolves the AIAs layer. The sample with the released tape on the parent wafer is dried in a fume hood. The dried sample is placed in an electron beam vaporizer (TeinescalFC- a layer in the chamber of 1800) and covering the order of 2_nmTi^8. si〇2. Before the removal of the A1As layer by electrons The metal used for the FET device is deposited by steaming the bond. By mixing a mixture of low modulus PDMS (Α.Β1·1〇, Sylgard 184, Dow Corning) to (tris-fluorenyl-1, I'2 A single layer pre-modified piece of tantalum wafer of 2-tetrahydrooctyl)-trichlorodecane was then baked at 65 t for 4 hours to prepare a PDMS printer having a thickness of about 5 coffee. In order to create a strong bond, the stamps were exposed to μ light for 5 minutes. During the transfer, the seals are extended via thermal expansion (in the case of a towel) and/or mechanical force. The wafer with the released tape is then laminated to the surface of the red-extended PDMS stamp and allowed to remain exposed for 5 minutes at the desired temperature. The parent wafer is peeled from the stamps and will

All ▼ is transferred to the stamp. The pre-strain release to the early impression is applied via cooling to room temperature and/or removal of the machine, resulting in the formation of a corrugated rim along the zones. In these mechanical evaluations, a specially designed A is used to extend and compress the PDMS= chapters with "waves" and "turtle" Example 3: Two-Dimensional Extensible Semiconductor The present invention provides an extensible semiconductor and an extendable electronic device that can be stretched, compressed, and/or flexed in multiple directions, including directions oriented orthogonally to one another, 150175.doc • 61 - 201042951 set. The extendable semiconductor and extendable electronic device of this aspect of the invention exhibit good mechanical and electronic properties and/or device performance when extended and/or compressed in multiple directions. Figures 27A-C provide images of the present invention showing extensible germanium semiconductors of two dimensional extensibility at different levels of magnification. The extensible semiconductor system shown in Figures 27A-B is prepared by pre-straining an elastic substrate by thermal expansion. Figures 28A-C provide images of three different structural configurations of the present invention showing two-dimensional extensible extendable semiconductors. As shown, the semiconductor structure of Figure 28 shows an edgeline wavy configuration, the semiconductor structure of Figure 28B exhibits a herringbone wavy configuration, and the semiconductor structure of Figure 28C exhibits a random wavy configuration. Figures 29A-D provide an image of an extensible semiconductor of the present invention fabricated by pre-straining an elastic substrate by thermal expansion. Figure 30 shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility prepared by pre-straining an elastic substrate by thermal expansion. Figure 3 shows an image corresponding to a variety of extension and compression conditions. Figure 31A shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility fabricated by pre-straining an elastic substrate by thermal expansion. Figures 3ib and 31C provide experimental results regarding the mechanical properties of the extensible semiconductor shown in Figure 31A. Literature 1. SR Forrest, Nature 428, 911 (2004). 2. For recent advances and reviews, see corpse r〇c仏 five or five percent, Iss 7 and 8 (2005). 150175.doc -62- 201042951 3. JA Rogers et al., Proc. Α/αί. dcac?. Scz·· t/iSJ 98,4835 (2001). 4. HO Jacobs, AR Tao, A. Schwartz, DH Gracias, GM Whitesides, Hidden e 296, 323 ( 2002). 5. HEA Huitema et al., iVaiwre 414, 599 (2001). 6. CD Sheraw^ A > Appl. Phys. Lett. 80, 1088 (2002) 7. Y. Chen# A > Nature 423, 136 (2003). 8. HC Jin, JR Abelson, MK Erhardt, RG Nuzzo, J. 〇Vac. Sci. Techn. B 22, 2548 (2004). 9. PHI Hsu et al., / 5:5 Dev· 51 , 371 (2004). 10. T. Someya^ A * Proc. Nat. Acad. Sci. USA 101, 9966 (2004) . 11. HC Lim et al., Jc, J 119, 2005, 332 (2005). 12· J. Vandeputte 事^ US Patent 6,580,151 (2003). 13. T. Sekitani^-A > Appl. Phys. Lett. 86, 2005, 073511 o (2005) . 14. E. Menard, RG Nuzzo, JA Rogers, Appl. Phys. Lett. 86, 2005, 093507 (2005). 15. H. Gleskova^ A 5 J. Noncryst. Sol. 338, 732 (20 04). 16. S.-H. Hur, OO Park, JA Rogers, Appl. Phys. Lett. 86, 243502 (2005). 17. X_F_ Duan et al., iVaiwre 425, 274 (2003). 18. Z. Suo, EY Ma, H. Gleskova, S. Wagner, Appl. Phys. 150175.doc -63- 201042951

Lett. 74, 1177 (1999). \9· Y.-h. hoo, Proc. Nat. Acad. Sci. USA 99, 10252 (2002). 20. T. Someya et al., Proc. Nat. Acad Sci. USA 102, 12321 (2005). 21. SP Lacour, J. Jones, S. Wagner, ZG Suo, Proc. IEEE 93, 1459 (2005). 22. SP Lacour^ A > Appl. Phys. Lett 82, 2404 (2003). 23. DS Gray, J. Tien, CS Chen, Adv. Mater. 16, 393 (2004). 24. R. Faez, WA Gazotti, MA De Paoli, Polymer 40, 5497 (1999) 25.. CA Marquette, LJ Blum, Biosens. Bioelectron. 20, 197 (2004). 26. X. Chen, JW Hutchinson, J. Appl. Mech. 71, 597 (2004). 27. ZY Huang, W. Hong, Z. Suo, J. Mech. Phys. Solids 53, 2101 (2005). 28. Properties of Silicon (An INSPEC publication, New York, 1988). 29. A. Bietsch, B. Michel, J. Appl. Phys. 88, 4310 (2000). 30. N. Bowden^· A ' Nature 146, 146 (1998). 31. WTS Huckf A » Langmuir 16, 3497 (2000). 150175.doc -64- 201042951 32. CM Stafford et al., · Public opinion. 3, 545 (2004).

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Sturm, T. Li, Z. Suo, Physica E 2005, 25, 326. Statement of Incorporation and Variation by Citations The following references are directed to the use of contact printing and/or solution printing in the method of the present invention. Technology to transfer, assemble, and interconnect self-assembly techniques for printed semiconductor components, and is incorporated herein by reference in its entirety: (1) "Guided molecular self-assembly: a review of recent efforts", Jiyun C Huie Smart Mater. Struct. (2003) 12, 264-271; (2) "Large-Scale Hierarchical Organization of 150175.doc -69- 201042951

Nanowire Arrays for Integrated Nanosystems", Whang, D.; Jin, S.; Wu, Y.; Lieber, CM Nano Lett. (2003) 3(9), 1255-1259; (3) "Directed Assembly of One- Dimensional

Nanostructures into Functional Networks", Yu Huang, Xiangfeng Duan, Qingqiao Wei, and Charles M. Lieber, (2001) 291, 630-633; and (4)"Electric-:field assisted assembly and alignment of metallic nanowires", Peter A. Smith et al., 乂pp/. corpse/2 less 5. Ze". (2000) 77(9), 1399-1401. All references throughout this application, such as patent documents including patents granted or granted, or equivalents thereof; patent application publications; unpublished patent applications; and non-patent literature or other information source materials, full text The manner in which they are incorporated is incorporated by reference to the extent of the extent of the extent of the disclosure of the disclosure of the disclosure of each of the of Inconsistent parts are incorporated herein by reference. Any of the appendices herein are hereby incorporated by reference in their entirety as the extent of the present disclosure. In this article, the terms "comprises", "comprises", "comprised" ","comprising" The existence of the described features, integers, steps, or components, but does not exclude the presence or addition of one or more other features, integers, steps, components, or groups thereof. In the term "comprising" Or "comprise(s))" or "comprised" may be grammatically similar terms, such as "consisting of" or •• substantially 150175.doc It is also intended to cover the individual embodiments of the invention, and thus, the embodiments of the invention are not necessarily the same. The invention has been described with reference to various specific and preferred embodiments and techniques. However, it should be understood that various changes and modifications can be made while remaining within the scope of the present invention. It will be apparent to those skilled in the art that the compositions, methods, devices, devices, materials, procedures, and techniques that are different from those specifically described herein can be applied to the practice of the present disclosure as broadly disclosed herein without Recourse to inappropriate experimentation. The functional equivalents of all of the compositions, methods, devices, materials, procedures, and techniques described herein are intended to be included in the present invention. None::: 蛉 不 — 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围 范围Or, as exemplified in the present specification, the embodiment is given by way of example ## ^次月月(not limited). The scope of the invention should be limited only by the scope of the patent application. ❹ [Simple diagram Explanation] Figure 1 shows the original micrograph of the semiconductor structure of one of the inventions. Dan < Item is shown in Figure 2 - R5 ^ . : Micrograph 'which provides a microscopic view of an array of extensible semiconductor structures of the present invention. An optical micrograph of the extensible semiconductor structure of the present invention. An atomic force micrograph of an extensible semiconductor gentleman having a semiconductor structure 150175.doc 71 201042951, the semiconductor structure being combined with a flexible substrate having a three-dimensional relief pattern on a surface of the substrate of the substrate Figure 6 shows a description A flow chart of an exemplary method of forming an extensible semiconductor device of the present invention. Figure 7 shows an image of an array of extensible semiconductor structures having longitudinal alignment of the inner surface of a curved curve supported by a flexible rubber substrate. A carrier image of an extendable semiconductor structure of the present invention is shown, wherein the s-printable semiconductor structure 776 is supported by a flexible substrate 777. As shown in Figure 8, the printable semiconductor structure 776 has an inner surface, the inner surfaces Having a contour shape in the form of a periodic wave. Figure 9A shows a flow chart illustrating an exemplary method of fabricating an array of extensible thin film transistors. Figure 9B shows the optical array of an array of extensible thin film transistors in a relaxed and extended configuration. Micrograph. Figure 10: Unintentional description of the process of constructing an extensible single crystal germanium device on an elastomer substrate. The first step (top frame) involves a single crystal thin (between 2 and 320 nm thickness) components. Or the fabrication of a complete integrated device (ie, a transistor, a diode, etc.), which is followed by a conventional lithography process followed by a top 矽 and 8 on a silicon-on-insulator (SOI) wafer. After 1 〇 2 layers of etching, the f structure is supported by the underlying wafer but not bonded to it (top frame). A pre-strained elastomeric substrate (poly(dimethyl methoxy oxane) pDMS Contacting the leads of the strips by dL to cause bonding between the materials (middle frame). Peeling the PDMS, bonding the strips to its surface, and then releasing the pre-strain to the PDMS Relaxed back to its unaffected 150175.doc -72- 201042951 state (no stress length L). This relaxation leads to spontaneous formation in these zones, which is well controlled, and is extremely prolonged. "waveform" structure (bottom box). Solid (8) An optical image of a large-scale array of wavy single crystal slabs (width = 2 〇; pitch 20 μηι, thickness = 1 〇〇 nm) on PDMS. (B) An angled scan of the electronic ‘,, 、's micrographs of the four wavy bands obtained from the array shown in (A). The wavelength and amplitude of the equal-wave structure are extremely high in the array (C) as the inter-surface degree (top frame) as a function of the position of a wavy Si band on the PDMS and the wave number of the Raman peak (bottom frame). They were measured by atomic force and Raman microscopy, respectively. These lines represent the sinusoidal fit of the data. (D) The amplitude (top frame) and wavelength (bottom frame) of the wavy band as a function of the thickness of the crucible, white for the pre-strain of the positioning in the PDMS. These lines correspond to the difference' without any fitting parameters. Figure 12: Warping wavelength as a function of temperature. The slight decrease in wavelength with temperature is attributed to the thermal shrinkage of the PDMS, which results in a shorter wavelength of the sample prepared at the higher temperature. Figure 13: Peak strain of 矽 as a function of 矽 thickness, for a pre-strain value of approximately ο”%. The red symbol corresponds to the bending strain calculated using the wavelength and amplitude, which are based on the equation describing the warping process. The black symbol corresponds to a similar calculation, but uses the wavelength and amplitude measured by AFM. Figure 14: (A) Atomic force micrograph (AFM; left border) and undulating contour (right border; wavy experiment) of a wavy single crystal 矽 tape (width = 2 〇 μιη; thickness = 100 nm) on a PDMS substrate Sinusoidal fitting of the data). Top, middle, and 150175.doc •73· 201042951 The bottom portion corresponds to the configuration when PDMS is subjected to strains of _7% (compression), 〇% (unstressed), and 4.7% (extension) along the length of the belt. (B) Average amplitude (black) and wavelength change (red) of the wavy band as a function of the strain applied to the PDMS substrate (top frame). For wavelength measurement, different substrates are used for tensioning (circumference) and compression (squares). The 矽 strain peak is a function of the applied strain (bottom box). The lines in these figures represent calculations without any freely fitting parameters. Figure 15: AFM top view image of the corrugated ankle band on the PDMS, and the cut line estimated at an angle relative to the long dimension of the bands. Figure 16: Shear strain as a function of applied strain. The red symbol corresponds to the response calculated by integrating the wavelength and amplitude by numerical integration of the length of the profile, which is obtained using the equation describing the warping process. The black pay sign corresponds to the strain measured along the wavy Si strip in the AFM surface profile in proportion to the surface to horizontal distance. Figure 17 (A) Optical image of an extensible single crystal ruthenium dipole on a PDMS substrate with _11% (top), 〇% (middle) and 11% (bottom) strain applied. The aluminum region corresponds to a thin (2 〇 nm) A1 electrode; the pink and green regions correspond to the y (boron) and p (phosphorus) doped regions of germanium. (B) The current density as a function of the bias of the extendable TT body is measured at various applied strain levels. The curve of t: t TO corresponds to the device exposed to ambient light or shaded to ambient light. The solid line shows the modeled result. It can be measured under the applied 9.9%, 〇% and 9.9% strain. Extend the current-voltage characteristics of the Schottky barrier 石 〇 〇 FET FET FET FET FET FET FET FET 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 The 矽 strain peak. The blue line is based on an accordion bellows (accordi〇n bell〇ws) model and one of the small strains of the black line is similar, which is also consistent with the rib mechanism. Figure 19: Wave pn diode Electrical measurements, before the three different devices W, #2, and #3) (about 5% of the applied strain), extension (about i, applied strain) and release about 100 cycles (cycle Estimated from three different devices before and after (after the cycle). This data indicates the change in device properties. The observed level of change and the change in the single-device change that does not change the applied strain. The level is comparable and may be due to a slight difference in probe contacts. Figure 20: At Optical image (top frame) of the undulating Schottky barrier M〇SFET in the stressed (middle) and compressed (top) and tensioned (bottom) states. Schematic description of the S-device (bottom frame). Figure 21: Transfer curve measured in a wavy, wavy Schottky barrier MOSFET at different applied strains. Figure 22. Used to create a "light edge" on a PDMS substrate, and " The elaboration of the steps of the wavy "band" is shown. The left bottom frame shows the deposition of thin (4) 2 on the surface of the strips to promote strong bonding with the PDMS. This combination results in a box in the right middle box. The formation of a wavy geometry. The weak van der Waals force combination (and medium to high level pre-strain) results in a warp geometry as shown in the upper right frame. Figure 23: approximately 19% of the heat expansion The pre-strained image of the wavy GaAs;f on the PDMS substrate. The optical (4), SEM (B)-dimensional AFM (C) and topographic AFM (D) images of the same sample. The SEM image 150175.doc -75· 201042951 by tilting the sample stage between the surface of the sample and the direction of detection Obtained at an oblique angle of 45°. (The points on the strips may be the residues of the sacrificial AlAs layers.) Surface height distributions (E, F) plotted along the blue and green lines shown in (D), respectively. Figure 24: (A) Optical micrograph of a wavy GaAs ribbon formed at 7.8% pre-strain, strongly bonded to the PDMS, collected under different applied strains. The blue bars on the left and right highlight this Some peaks in the structure; the change in distance between the bars indicates the dependence of the wavelength on the applied strain. (B) The change in wavelength as a function of the applied strain of the wavy GaAs band shown in (A), Black drawing; similar data for the system of sample (A) after embedding PDMS, drawn in red. Figure 25: Image of a GaAs strip integrated with ohmic (source and drain) and Schottky (gate) contacts to form a complete MESFET. (A) An optical micrograph of a wavy band formed using a 1.9% pre-deformation and a strong bond with the PDMS, which shows the formation of periodic waves only in the electrodeless region (gray). (B) Optical image and (C) SEM image of the warp band formed by pre-strain of about 7% and weak combination with the PDMS. (D), the optical image of the two ribs shown in (B) after it is extended to flat. (E), the individual tape devices shown in (B) have different externally applied strains (ie, from top to bottom, 5.83% compressive strain, no applied strain, and 5.83% extended strain) are embedded in A set of optical images after PDMS. Figure 26: (A) Optical image of a GaAs-band MESFET with different strains on a PDMS stamp constructed in a PDMS substrate. The pre-application 150175.doc -76 - 201042951 applied to the PDMS seal before the devices were transferred to the surface of the PDMS stamp became 4.7%. (b) A comparison of the I-V curves of the apparatus shown before and after the system was applied with a 4.7% extension strain (A). Figures 27A-C provide images of the extendable semiconductor of the present invention exhibiting two-dimensional extensibility at different levels of magnification. Figures 28A-C provide images of three different structural configurations of the extendable semiconductor of the present invention showing two-dimensional extensibility. 29A-D provide images of the extensible semiconductor of the present invention prepared by pre-straining the elastic substrate by thermal expansion.

Figure 30 shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility in a varying extended and compressed state. Figure 31A shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility fabricated by pre-straining an elastic substrate by thermal expansion. Figures 3B and 3C provide experimental results regarding the mechanical properties of the extensible semiconductor shown in Figure 31A. [Main component symbol description] 700 Semiconductor component 705 Flexible substrate 710 Wrapping surface 715 Curved semiconductor structure 720 Curved inner surface 730 Deformation axis 750 Recessed area 760 Fluctuation characteristics 776 Printable semiconductor structure 777 Flexible substrate

G 150175.doc -77-

Claims (1)

201042951 VII. Patent application scope: 1. An extendable semiconductor component comprising: an elastic substrate having a support surface; and a semiconductor structure having a curved inner surface, wherein a plurality of discrete points of the curved inner surface are combined To the support surface of the elastic substrate, and the discrete points combined are separated from each other by a soft curved region that is not directly bonded to the elastic substrate, wherein the warped region is not in physical contact with the substrate. The extensible semiconductor component of claim 1, wherein the warpage region is under strain. 3. The extensible semiconductor component of claim 2, wherein the strain system is selected to be in the range of 30%. 4. An extendable semiconductor component as claimed, wherein the inner surface of the curve has at least a raised region, at least one recessed region or at least one raised region combined with one of the at least one recessed region. 〇 5 'extensible semiconductor component of claim i, wherein the inner surface of the curve has a wheel shape comprising a periodic wave or a periodic wave. 6:: The extendable semiconductor component of claim 1, wherein the thinned semiconductor junction 'the wave extends at least a portion of the length of the structure. 7. The extensible semiconductor of claim 6 wherein the warped semiconductor junction has a sinusoidal configuration. The sinusoidal configuration has a period selected from the range of 5 microns to 50 microns and a ' , the amplitude of the circumference. The invention is the extensible semiconductor component of claim 1, wherein the warped semiconductor structure has a plurality of distorted structures extending along the length of the structure &lt; shape. 9. If you are asking for it! The extendable semiconductor component, wherein the semiconductor structure comprises a strip. 10. An extendable semiconductor component as claimed, wherein the warped semiconductor structure has a spatially varying configuration in one or two dimensions, wherein the inner surface has a contoured shape that varies spatially in one or two dimensions . Π. As requested! The extendable semiconductor component, wherein the semiconductor structure has a thickness selected from the range of 20 nm to 320 nm. 12. The extensible semiconductor component of claim 1, wherein the elastomeric substrate comprises a polymer. An extensible semiconductor device as claimed in claim 1, wherein the semiconductor structure is a single crystal inorganic semiconductor material. 14. The extensible semiconductor component of claim 1, wherein the semiconductor structure comprises a material selected from the group consisting of: tantalum, niobium, tantalum carbide 'aluminum phosphide, aluminum arsenide' aluminum telluride, Gallium nitride, gallium phosphide, gallium antimonide, gallium antimonide, indium phosphide, indium arsenide, indium antimonide, oxidation, zinc selenide, zinc telluride, cadmium sulfide, cadmium selenide, cadmium telluride, Silver sulfide, lead sulfide, lead selenide 'lead lead' aluminum gallium arsenide, aluminum indium arsenide, aluminum dish indium, phosphorus gallium arsenide ' gallium indium arsenide' gallium indium phosphide, arsenide aluminum gallium, Phosphine and gallium indium, squamous gallium indium, carbon nanotubes and graphite sheets. The extensible semiconductor component of claim 1, wherein the semiconductor structure comprises a printable semiconductor component. 150175. doc 201042951 16. The extendable semiconductor component of claim 1, further comprising an encapsulation layer in contact with the semiconductor structure having a curved inner surface. 17. The extensible semiconductor component of claim 1, wherein the semiconductor structure is bonded to the elastomeric substrate via an adhesive layer coating or film that is located between the semiconductor structure and the elastomeric substrate. 18. The extensible semiconductor component of claim 1, wherein the semiconductor structure is bonded to the property via a hydrogen bond, a van der Waals interaction, or a dipole-to-dipole interaction between the semiconductor structure and the elastic substrate. Its seesaw. 19. The extensible semiconductor component of claim 1 comprising a plurality of semiconductor structures, each strip having a curved inner surface, wherein the substrate is flat between the strips. 20. The extendable semiconductor component of claim 7, wherein the period and the amplitude are within 5% of a surface of the substrate of one square centimeter. 21. The extensible semiconductor component of claim 2, wherein the strain is greater than 0.5%. Q 22. The extensible semiconductor component of claim 2, wherein the strain is greater than 1%. 23. The extendable semiconductor component of claim 2, wherein the strain is greater than 2%. 24. The extensible semiconductor component of claim 2, wherein the strain is less than 3%. 25. The extensible semiconductor component of claim 2, wherein the strain is less than 1%. 26. The extensible semiconductor component of claim 2, wherein the strain is less than 1 〇/〇. 27. An extendable electronic circuit comprising: an elastic substrate having a support surface; and an electronic circuit having a curved inner surface, wherein a plurality of discrete points of the curved inner surface 150175.doc 201042951 are coupled to the The support surface of the elastic substrate, in combination with the discrete points, is separated from each other by - not directly bonded to the tortuous region of the elastic substrate, wherein the tortuous region is not in physical contact with the substrate. 28. The extendable electronic circuit of claim 27, wherein the electronic circuit is a printable electronic circuit. 29. The extendable electronic circuit of claim 27, wherein the electronic circuit comprises a plurality of integrated device components. The plurality of integrated device components are selected from the group consisting of: a group of semiconductor components, a dielectric (four), an electrode, a conductive element, and a doped semiconductor element. 30. The extendable electronic circuit of claim 27, wherein the tortuous zone is under strain. 3!• An extendable semiconductor component according to claim 30, wherein the strainer is in the range of from 1% to 30%. 32. The extendable electronic circuit of claim 27, wherein the inner surface of the curve has a contour shape characterized by a -periodic wave or a periodic wave. The extendable electronic circuit of claim 27, wherein the warped region has a configuration comprising a -periodic wave, the periodic wave extending at least a portion of the electron. </ RTI> 34. The extendable electronic circuit of claim 27, wherein the warped region has a sinusoidal configuration having a period selected from the range of 5 microns to cis and - selected from (10) m to the range of 1.5 μm where the warped region has a 35. The extendable electronic circuit of claim 27, 150I75.doc 201042951 package &quot;. A plurality of warped configurations in which the length of the electronic circuit extends. 36. The extendable electronic circuit of claim 27, wherein the pure curved region has a spatially varying configuration in one or two dimensions, wherein the inner surface has a contour shape that varies spatially in one or two dimensions. . 37. An extendable electronic circuit as in δ ig. 27, wherein the electronic circuit has a thickness selected from the range of from 20 nanometers to 320 nanometers. 38. The extendable electronic circuit of claim 27, wherein the electronic circuit is bonded to the elastic substrate via an adhesive layer, coating or film between the electronic circuit and the elastic substrate. 39. The extendable electronic circuit of claim 27, further comprising an encapsulation layer in contact with the electronic circuit having a curved inner surface. 40. A method for fabricating an extensible semiconductor device, the method comprising the steps of: providing a plurality of ribbons connected to a wafer; and top surface of a 5 Hz equivalent flat surface and a flat pre-strained elastic substrate Conformally contacting; stripping the elastic substrate in a direction away from the wafer to lift the strips apart from the wafer, and bonding to the elastic substrate; releasing the pre-strain on the elastic substrate to generate a plurality of distortions in the stone ribbon, wherein the stone ribbons have a curved inner surface, wherein a plurality of discrete points of the inner surface of the curve are bonded to the tangent surface of the elastic substrate, and the knots σ The detachment points are separated from each other by not directly bonding to the tortuous region of the elastic substrate. 150175.doc 201042951 41. The method of claim 40 for fabricating an extendable semiconductor component, wherein the flexible substrate is planar between the strips. 42. The method of claim 40, wherein the extensible semiconductor device comprises a pn junction diode. 43. A method as claimed in claim 42 for the manufacture of an extendable semiconductor component, wherein the pn junction diode system is a portion of a photovoltaic device. 44. The method of claim 40 for fabricating an extensible semiconductor device, wherein the extensible semiconductor device comprises a field effect transistor. 45. The method of claim 4, wherein the plurality of strips are provided by: defining a photoresist layer on a wafer on an insulator Defining the size of the plurality of strips; removing the photoresist layer; and engraving the central portion of the strip by #刻. The file is released from the underlying wafer while maintaining the connection of the ends of the strip to the wafer. 46. A dual transfer method for fabricating an extensible semi-conductive core, such as a rhodium-plated member, the method comprising the steps of: providing a plurality of ribbons connected to a wafer; The top surface is in conformal contact with a flat unstrained elastic substrate; the elastic substrate is peeled away from the wafer to lift the strips apart from the wafer, and the strips are bonded to the unstrained elastic substrate; The top surface of one of the strips of the strips that are connected to the unstrained elastic substrate is in conformal contact with a pre-strained elastic substrate; 〃 150175.doc 201042951 stripping the pre-strain elasticity in a direction away from the unstrained elastic substrate Substrate bonding the strips to the pre-strained elastic substrate by lifting the strips apart from the unstrained elastic substrate; and releasing the pre-strain on the elastic substrate to create a plurality of distortions in the abrasive strips Wherein the stone ribbon has a curved inner surface, wherein a plurality of discrete points of the inner surface of the curve are bonded to the surface of the material substrate, and the discrete points are combined by - no direct adhesion To warp the elastic region of the substrate separated from each other. 150175.doc