TW200721517A - Printable semiconductor structures and related methods of making and assembling - Google Patents

Printable semiconductor structures and related methods of making and assembling

Info

Publication number
TW200721517A
TW200721517A TW095119520A TW95119520A TW200721517A TW 200721517 A TW200721517 A TW 200721517A TW 095119520 A TW095119520 A TW 095119520A TW 95119520 A TW95119520 A TW 95119520A TW 200721517 A TW200721517 A TW 200721517A
Authority
TW
Taiwan
Prior art keywords
making
present
printable semiconductor
compositions
substrates
Prior art date
Application number
TW095119520A
Other languages
Chinese (zh)
Other versions
TWI427802B (en
Inventor
Ralph G Nuzzo
John A Rogers
Etienne Menard
Keon-Jae Lee
Dahl-Young Khang
Yugang Sun
Matthew Meitl
Zhengtao Zhu
Heung Cho Ko
Shawn Mack
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/145,542 external-priority patent/US7557367B2/en
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of TW200721517A publication Critical patent/TW200721517A/en
Application granted granted Critical
Publication of TWI427802B publication Critical patent/TWI427802B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.
TW095119520A 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling TWI427802B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/145,542 US7557367B2 (en) 2004-06-04 2005-06-02 Stretchable semiconductor elements and stretchable electrical circuits
US11/145,574 US7622367B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
PCT/US2005/019354 WO2005122285A2 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US79010406P 2006-04-07 2006-04-07

Publications (2)

Publication Number Publication Date
TW200721517A true TW200721517A (en) 2007-06-01
TWI427802B TWI427802B (en) 2014-02-21

Family

ID=38682516

Family Applications (7)

Application Number Title Priority Date Filing Date
TW095119520A TWI427802B (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
TW102142517A TWI533459B (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
TW105135576A TW201717261A (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW095121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW104103340A TWI570776B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW100139527A TWI466488B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW099127004A TWI489523B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Family Applications After (6)

Application Number Title Priority Date Filing Date
TW102142517A TWI533459B (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
TW105135576A TW201717261A (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW095121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW104103340A TWI570776B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW100139527A TWI466488B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW099127004A TWI489523B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Country Status (4)

Country Link
JP (6) JP2007281406A (en)
KR (5) KR20070100617A (en)
MY (4) MY151572A (en)
TW (7) TWI427802B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450407B (en) * 2009-12-08 2014-08-21 Zena Technologies Inc Nanowire structured photodiode with a surrounding epitaxially grown p or n layer
TWI484657B (en) * 2008-08-11 2015-05-11 Taiwan Semiconductor Mfg Co Ltd Light emitting diodes
CN112366250A (en) * 2020-11-17 2021-02-12 佛山市国星半导体技术有限公司 GaN-based ultraviolet detector and manufacturing method thereof

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KR101429098B1 (en) 2004-06-04 2014-09-22 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Methods and devices for fabricating and assembling printable semiconductor elements
TWI427802B (en) * 2005-06-02 2014-02-21 Univ Illinois Printable semiconductor structures and related methods of making and assembling
MY172115A (en) * 2006-09-06 2019-11-14 Univ Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
WO2008143635A1 (en) * 2007-01-17 2008-11-27 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly
JP5743553B2 (en) 2008-03-05 2015-07-01 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Stretchable and foldable electronic devices
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
JP2012515436A (en) * 2009-01-12 2012-07-05 エムシー１０ インコーポレイテッド Non-planar imaging array methods and applications
KR101048356B1 (en) * 2009-06-08 2011-07-14 서울대학교산학협력단 Metal connection structure of stretchable electronic elements and manufacturing method thereof
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
JP2011138934A (en) 2009-12-28 2011-07-14 Sony Corp Thin film transistor, display device, and electronic equipment
US8992807B2 (en) 2010-01-14 2015-03-31 Samsung Techwin Co., Ltd. Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
KR101262319B1 (en) * 2010-12-31 2013-05-08 그래핀스퀘어 주식회사 Flexible stretchable semiconductor device containing graphene electrode, method of reducing resistance between graphene electrode and semiconductor layer, and graphene interconnecor
WO2012166686A2 (en) 2011-05-27 2012-12-06 Mc10, Inc. Electronic, optical and/or mechanical apparatus and systems and methods for fabricating same
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TWI524825B (en) 2012-10-29 2016-03-01 財團法人工業技術研究院 Method of transferring carbon conductive film
FR2997554B1 (en) * 2012-10-31 2016-04-08 Soitec Silicon On Insulator METHOD OF MODIFYING AN INITIAL STRAIN STATUS FROM AN ACTIVE LAYER TO A FINAL STRAIN STATUS
KR102229373B1 (en) * 2013-10-08 2021-03-17 한양대학교 산학협력단 Method for manufacturing flexible device, flexible device manufactured thereby, and junction device
KR101447238B1 (en) * 2014-06-20 2014-10-08 한국기계연구원 Ethod for forming quantum dot thin film
KR102255198B1 (en) * 2014-08-12 2021-05-25 삼성디스플레이 주식회사 Stretchable substrate and organic light emitting display comprising the same
KR102416112B1 (en) * 2014-10-02 2022-07-04 삼성전자주식회사 Stretchable/foldable optoelectronic device, method of manufacturing the same and apparatus including the optoelectronic device
JP6620318B2 (en) 2014-11-27 2019-12-18 パナソニックＩｐマネジメント株式会社 Sheet-like stretchable structure
JP6369788B2 (en) 2014-11-27 2018-08-08 パナソニックＩｐマネジメント株式会社 Electronics structure
KR101630817B1 (en) 2014-12-10 2016-06-15 한국과학기술연구원 Wavy metal nanowire network, flexible transparent electrode comprising the same, and the preparation method thereof
US10297575B2 (en) * 2016-05-06 2019-05-21 Amkor Technology, Inc. Semiconductor device utilizing an adhesive to attach an upper package to a lower die
KR102250527B1 (en) * 2016-12-08 2021-05-10 고려대학교 산학협력단 Variable Color Filter Film And Strain Measuring Apparatus
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US11109479B2 (en) 2017-10-12 2021-08-31 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
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KR102027115B1 (en) * 2017-11-28 2019-10-01 고려대학교 세종산학협력단 Organic photoelectric device and manufacturing method thereof
KR102100550B1 (en) * 2018-01-29 2020-04-13 충북대학교 산학협력단 Method and system for manufacturing copper electrode
KR102119009B1 (en) * 2018-03-08 2020-06-04 포항공과대학교 산학협력단 Method of preparing the stretchable substrate and method of preparing the flexible electronic device comprising the same
KR102119023B1 (en) * 2018-04-23 2020-06-04 포항공과대학교 산학협력단 Method of preparing the stretchable substrate using 2 or more species oligomer, and method of preparing the flexible electronic device comprising the same
KR102554461B1 (en) * 2018-07-26 2023-07-10 엘지디스플레이 주식회사 Stretchable display device
KR102172349B1 (en) * 2018-09-14 2020-10-30 포항공과대학교 산학협력단 Method of manufacturing stretchable substrate, and method of fabricating stretchable electronic device comprising the same
KR20210087479A (en) 2018-10-31 2021-07-12 다이니폰 인사츠 가부시키가이샤 A wiring board and a method for manufacturing a wiring board
CN112997588B (en) 2018-10-31 2024-01-30 大日本印刷株式会社 Wiring board and method for manufacturing wiring board
CN113016237A (en) 2018-11-16 2021-06-22 大日本印刷株式会社 Wiring board and method for manufacturing wiring board
US11395404B2 (en) 2018-11-16 2022-07-19 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing the wiring board
JP7249512B2 (en) * 2018-11-30 2023-03-31 大日本印刷株式会社 Wiring board and method for manufacturing wiring board
EP3944727A4 (en) 2019-03-20 2022-12-07 Dai Nippon Printing Co., Ltd. Wiring board, and method for manufacturing wiring board
CN111554638B (en) * 2020-04-16 2023-09-08 上海交通大学 Substrate for stretchable electronic device and method of making the same
CN111952322B (en) * 2020-08-14 2022-06-03 电子科技大学 Flexible semiconductor film with periodically adjustable buckling structure and preparation method thereof

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TWI427802B (en) * 2005-06-02 2014-02-21 Univ Illinois Printable semiconductor structures and related methods of making and assembling

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484657B (en) * 2008-08-11 2015-05-11 Taiwan Semiconductor Mfg Co Ltd Light emitting diodes
TWI450407B (en) * 2009-12-08 2014-08-21 Zena Technologies Inc Nanowire structured photodiode with a surrounding epitaxially grown p or n layer
CN112366250A (en) * 2020-11-17 2021-02-12 佛山市国星半导体技术有限公司 GaN-based ultraviolet detector and manufacturing method thereof

Also Published As

Publication number Publication date
JP2017038064A (en) 2017-02-16
JP6377689B2 (en) 2018-08-22
JP6574157B2 (en) 2019-09-11
TW201428984A (en) 2014-07-16
JP2019004151A (en) 2019-01-10
TW200739681A (en) 2007-10-16
KR20130133733A (en) 2013-12-09
TWI466488B (en) 2014-12-21
TW201519287A (en) 2015-05-16
KR20150044865A (en) 2015-04-27
TWI489523B (en) 2015-06-21
TWI427802B (en) 2014-02-21
MY152238A (en) 2014-09-15
JP2015133510A (en) 2015-07-23
KR20170077097A (en) 2017-07-05
JP2014017495A (en) 2014-01-30
MY151572A (en) 2014-06-13
TW201042951A (en) 2010-12-01
MY143492A (en) 2011-05-31
KR20140107158A (en) 2014-09-04
JP6140207B2 (en) 2017-05-31
TW201717261A (en) 2017-05-16
MY163588A (en) 2017-09-29
JP2017103459A (en) 2017-06-08
TWI336491B (en) 2011-01-21
JP5851457B2 (en) 2016-02-03
KR20070100617A (en) 2007-10-11
TW201216641A (en) 2012-04-16
JP2007281406A (en) 2007-10-25
TWI533459B (en) 2016-05-11
TWI570776B (en) 2017-02-11

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