TWI427802B - 可印刷半導體結構及製造和組合之相關方法 - Google Patents

可印刷半導體結構及製造和組合之相關方法 Download PDF

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Publication number
TWI427802B
TWI427802B TW095119520A TW95119520A TWI427802B TW I427802 B TWI427802 B TW I427802B TW 095119520 A TW095119520 A TW 095119520A TW 95119520 A TW95119520 A TW 95119520A TW I427802 B TWI427802 B TW I427802B
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TW
Taiwan
Prior art keywords
printable semiconductor
wafer
semiconductor component
component
printable
Prior art date
Application number
TW095119520A
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English (en)
Chinese (zh)
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TW200721517A (en
Inventor
努茲若 勞弗Ｇ
羅傑斯 約翰Ａ
梅納德 倚天恩
李建宰
姜達榮
孫玉剛
梅特 馬修
朱正濤
高興助
麥克 史旺
Original Assignee
美國伊利諾大學理事會
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Priority claimed from US11/145,574 external-priority patent/US7622367B1/en
Application filed by 美國伊利諾大學理事會 filed Critical 美國伊利諾大學理事會
Publication of TW200721517A publication Critical patent/TW200721517A/zh
Application granted granted Critical
Publication of TWI427802B publication Critical patent/TWI427802B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095119520A 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法 TWI427802B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/145,574 US7622367B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
PCT/US2005/019354 WO2005122285A2 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,542 US7557367B2 (en) 2004-06-04 2005-06-02 Stretchable semiconductor elements and stretchable electrical circuits
US79010406P 2006-04-07 2006-04-07

Publications (2)

Publication Number Publication Date
TW200721517A TW200721517A (en) 2007-06-01
TWI427802B true TWI427802B (zh) 2014-02-21

Family

ID=38682516

Family Applications (7)

Application Number Title Priority Date Filing Date
TW095119520A TWI427802B (zh) 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法
TW102142517A TWI533459B (zh) 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法
TW095121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW099127004A TWI489523B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW105135576A TW201717261A (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW100139527A TWI466488B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW104103340A TWI570776B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽

Family Applications After (6)

Application Number Title Priority Date Filing Date
TW102142517A TWI533459B (zh) 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法
TW095121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW099127004A TWI489523B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW105135576A TW201717261A (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW100139527A TWI466488B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW104103340A TWI570776B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽

Country Status (4)

Country Link
JP (6) JP2007281406A (enExample)
KR (5) KR20070100617A (enExample)
MY (4) MY151572A (enExample)
TW (7) TWI427802B (enExample)

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CN105826345B (zh) * 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
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Also Published As

Publication number Publication date
JP6377689B2 (ja) 2018-08-22
JP5851457B2 (ja) 2016-02-03
JP6140207B2 (ja) 2017-05-31
KR20070100617A (ko) 2007-10-11
TWI533459B (zh) 2016-05-11
TWI466488B (zh) 2014-12-21
TW201428984A (zh) 2014-07-16
JP2017103459A (ja) 2017-06-08
MY152238A (en) 2014-09-15
JP2019004151A (ja) 2019-01-10
JP6574157B2 (ja) 2019-09-11
TW200739681A (en) 2007-10-16
TWI570776B (zh) 2017-02-11
TWI336491B (en) 2011-01-21
JP2014017495A (ja) 2014-01-30
TW201042951A (en) 2010-12-01
TWI489523B (zh) 2015-06-21
JP2017038064A (ja) 2017-02-16
JP2015133510A (ja) 2015-07-23
KR20130133733A (ko) 2013-12-09
JP2007281406A (ja) 2007-10-25
KR20170077097A (ko) 2017-07-05
TW201216641A (en) 2012-04-16
MY143492A (en) 2011-05-31
TW200721517A (en) 2007-06-01
KR20150044865A (ko) 2015-04-27
TW201519287A (zh) 2015-05-16
MY163588A (en) 2017-09-29
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