MY151572A - Printable semiconductor structures and related methods of making and assembling - Google Patents

Printable semiconductor structures and related methods of making and assembling

Info

Publication number
MY151572A
MY151572A MYPI20062537A MY151572A MY 151572 A MY151572 A MY 151572A MY PI20062537 A MYPI20062537 A MY PI20062537A MY 151572 A MY151572 A MY 151572A
Authority
MY
Malaysia
Prior art keywords
making
present
printable semiconductor
compositions
substrates
Prior art date
Application number
Other languages
English (en)
Inventor
Ralph G Nuzzo
John A Rogers
Etienne Menard
Keon Jae Lee
Dahl-Young Khang
Yugang Sun
Matthew Meitl
Zhengtao Zhu
Heung Cho Ko
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/145,574 external-priority patent/US7622367B1/en
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of MY151572A publication Critical patent/MY151572A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/40FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6758Thin-film transistors [TFT] characterised by the insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882Graphene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
MYPI20062537 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling MY151572A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/145,574 US7622367B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
PCT/US2005/019354 WO2005122285A2 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,542 US7557367B2 (en) 2004-06-04 2005-06-02 Stretchable semiconductor elements and stretchable electrical circuits
US79010406P 2006-04-07 2006-04-07

Publications (1)

Publication Number Publication Date
MY151572A true MY151572A (en) 2014-06-13

Family

ID=38682516

Family Applications (4)

Application Number Title Priority Date Filing Date
MYPI20062537 MY151572A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20113695 MY152238A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20062672A MY143492A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
MYPI20094997A MY163588A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Family Applications After (3)

Application Number Title Priority Date Filing Date
MYPI20113695 MY152238A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20062672A MY143492A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
MYPI20094997A MY163588A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Country Status (4)

Country Link
JP (6) JP2007281406A (enExample)
KR (5) KR20070100617A (enExample)
MY (4) MY151572A (enExample)
TW (7) TWI427802B (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101120433B (zh) 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
TWI427802B (zh) * 2005-06-02 2014-02-21 美國伊利諾大學理事會 可印刷半導體結構及製造和組合之相關方法
CN101681695B (zh) * 2006-09-06 2013-04-10 伊利诺伊大学评议会 在用于可拉伸电子元件的半导体互连和纳米膜中的受控弯曲结构
CN105826345B (zh) * 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
US8134163B2 (en) * 2008-08-11 2012-03-13 Taiwan Semiconductor Manfacturing Co., Ltd. Light-emitting diodes on concave texture substrate
US8519379B2 (en) * 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
JP2012515436A (ja) * 2009-01-12 2012-07-05 エムシー10 インコーポレイテッド 非平面撮像アレイの方法及び応用
KR101048356B1 (ko) * 2009-06-08 2011-07-14 서울대학교산학협력단 잡아 늘일 수 있는 전자소자들의 금속 연결 구조 및 그 제조방법
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
US8992807B2 (en) 2010-01-14 2015-03-31 Samsung Techwin Co., Ltd. Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
WO2012091498A1 (ko) * 2010-12-31 2012-07-05 성균관대학교산학협력단 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
TWI524825B (zh) 2012-10-29 2016-03-01 財團法人工業技術研究院 碳材導電膜的轉印方法
FR2997554B1 (fr) * 2012-10-31 2016-04-08 Soitec Silicon On Insulator Procede de modification d'un etat de contrainte initial d'une couche active vers un etat de contrainte final
KR102229373B1 (ko) * 2013-10-08 2021-03-17 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
KR101447238B1 (ko) * 2014-06-20 2014-10-08 한국기계연구원 양자점 박막 형성 방법
KR102255198B1 (ko) * 2014-08-12 2021-05-25 삼성디스플레이 주식회사 스트레처블 기판 및 이를 구비한 유기 발광 표시 장치
KR102416112B1 (ko) * 2014-10-02 2022-07-04 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
JP6369788B2 (ja) 2014-11-27 2018-08-08 パナソニックIpマネジメント株式会社 エレクトロニクス用構造体
WO2016084345A1 (en) 2014-11-27 2016-06-02 Panasonic Intellectual Property Management Co., Ltd. Sheet-shaped stretchable structure, and resin composition for stretchable resin sheet and stretchable resin sheet used for the structure
KR101630817B1 (ko) 2014-12-10 2016-06-15 한국과학기술연구원 굴곡진 금속 나노와이어 네트워크, 이를 포함하는 신축성 투명전극 및 이의 제조방법
US10297575B2 (en) * 2016-05-06 2019-05-21 Amkor Technology, Inc. Semiconductor device utilizing an adhesive to attach an upper package to a lower die
KR102250527B1 (ko) * 2016-12-08 2021-05-10 고려대학교 산학협력단 가변 칼라 필터 필름 및 변형률 측정 장치
WO2019074111A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11284507B2 (en) 2017-10-12 2022-03-22 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
TWI754106B (zh) 2017-10-12 2022-02-01 日商大日本印刷股份有限公司 配線基板及配線基板的製造方法
US10959326B2 (en) 2017-11-07 2021-03-23 Dai Nippon Printing Co., Ltd. Stretchable circuit substrate and article
KR102027115B1 (ko) * 2017-11-28 2019-10-01 고려대학교 세종산학협력단 유기광전소자 및 이의 제조방법
KR102100550B1 (ko) * 2018-01-29 2020-04-13 충북대학교 산학협력단 구리 전극 제작 방법 및 구리 전극 제작 시스템
KR102119009B1 (ko) * 2018-03-08 2020-06-04 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102119023B1 (ko) * 2018-04-23 2020-06-04 포항공과대학교 산학협력단 2종 이상의 올리고머를 이용한 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102554461B1 (ko) * 2018-07-26 2023-07-10 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR102172349B1 (ko) * 2018-09-14 2020-10-30 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
EP3876682A4 (en) 2018-10-31 2022-12-07 Dai Nippon Printing Co., Ltd. CIRCUIT BOARD AND PROCESS OF MAKING THE CIRCUIT BOARD
KR102779787B1 (ko) 2018-10-31 2025-03-12 다이니폰 인사츠 가부시키가이샤 배선 기판 및 배선 기판의 제조 방법
EP3883352A4 (en) 2018-11-16 2022-08-31 Dai Nippon Printing Co., Ltd. CIRCUIT SUBSTRATE AND METHOD OF MAKING THE CIRCUIT SUBSTRATE
US11395404B2 (en) 2018-11-16 2022-07-19 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing the wiring board
JP7249512B2 (ja) * 2018-11-30 2023-03-31 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP6826786B1 (ja) * 2019-03-20 2021-02-10 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111554638B (zh) * 2020-04-16 2023-09-08 上海交通大学 用于可拉伸电子装置的基底及其制备方法
US11699677B2 (en) * 2020-06-30 2023-07-11 Openlight Photonics, Inc. Die-to-wafer bonding utilizing micro-transfer printing
CN111952322B (zh) * 2020-08-14 2022-06-03 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
CN114258185A (zh) * 2020-09-24 2022-03-29 北京梦之墨科技有限公司 一种电子器件及其制备方法
CN112366250B (zh) * 2020-11-17 2022-11-15 佛山市国星半导体技术有限公司 一种GaN基紫外探测器及其制作方法
KR102412729B1 (ko) 2021-01-18 2022-06-23 연세대학교 산학협력단 신축성 디스플레이 장치
WO2025187670A1 (ja) * 2024-03-04 2025-09-12 国立大学法人大阪大学 薄膜デバイスおよび薄膜デバイスの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482673B2 (en) * 1996-10-17 2002-11-19 Seiko Epson Corporation Semiconductor device, method of making the same, circuit board, flexible substrate, and method of making substrate
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
US6566273B2 (en) * 2001-06-27 2003-05-20 Infineon Technologies Ag Etch selectivity inversion for etching along crystallographic directions in silicon
EP1506568B1 (en) * 2002-04-29 2016-06-01 Samsung Electronics Co., Ltd. Direct-connect signaling system
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US7704684B2 (en) * 2003-12-01 2010-04-27 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating three-dimensional nanoscale structures
JP5110766B2 (ja) * 2003-12-15 2012-12-26 株式会社半導体エネルギー研究所 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法
KR101207442B1 (ko) * 2003-12-15 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막 집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로 장치를 가지는 아이디 태그 및 동전
JP4841807B2 (ja) * 2004-02-27 2011-12-21 株式会社半導体エネルギー研究所 薄膜集積回路及び薄型半導体装置
KR101185613B1 (ko) * 2004-04-27 2012-09-24 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 소프트 리소그래피용 복합 패터닝 장치
CN101120433B (zh) * 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
TWI427802B (zh) * 2005-06-02 2014-02-21 美國伊利諾大學理事會 可印刷半導體結構及製造和組合之相關方法

Also Published As

Publication number Publication date
JP6377689B2 (ja) 2018-08-22
JP5851457B2 (ja) 2016-02-03
JP6140207B2 (ja) 2017-05-31
TWI427802B (zh) 2014-02-21
KR20070100617A (ko) 2007-10-11
TWI533459B (zh) 2016-05-11
TWI466488B (zh) 2014-12-21
TW201428984A (zh) 2014-07-16
JP2017103459A (ja) 2017-06-08
MY152238A (en) 2014-09-15
JP2019004151A (ja) 2019-01-10
JP6574157B2 (ja) 2019-09-11
TW200739681A (en) 2007-10-16
TWI570776B (zh) 2017-02-11
TWI336491B (en) 2011-01-21
JP2014017495A (ja) 2014-01-30
TW201042951A (en) 2010-12-01
TWI489523B (zh) 2015-06-21
JP2017038064A (ja) 2017-02-16
JP2015133510A (ja) 2015-07-23
KR20130133733A (ko) 2013-12-09
JP2007281406A (ja) 2007-10-25
KR20170077097A (ko) 2017-07-05
TW201216641A (en) 2012-04-16
MY143492A (en) 2011-05-31
TW200721517A (en) 2007-06-01
KR20150044865A (ko) 2015-04-27
TW201519287A (zh) 2015-05-16
MY163588A (en) 2017-09-29
KR20140107158A (ko) 2014-09-04
TW201717261A (zh) 2017-05-16

Similar Documents

Publication Publication Date Title
MY151572A (en) Printable semiconductor structures and related methods of making and assembling
WO2006130721A3 (en) Printable semiconductor structures and related methods of making and assembling
WO2006099171A3 (en) NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES
WO2008066894A3 (en) Substrate for a flexible microelectronic assembly
TW200625702A (en) Integrated thermoelectric cooling devices and methods for fabricating same
WO2007014294A3 (en) Solutions integrated circuit integration of alternative active area materials
WO2007133894A3 (en) Low dimensional thermoelectrics fabricated by semiconductor wafer etching
EP2165362A4 (en) HOLE INTERCONNECTION LOW RESISTANCE THROUGH A SLICE
AU2003286572A8 (en) Processes for hermetically packaging wafer level microscopic structures
IL184780A0 (en) Compositions for processing of semiconductor substrates
TW200507018A (en) Semiconductor device and manufacturing method thereof
WO2007046852A3 (en) Discretized processing and process sequence integration of substrate regions
AU2003272205A1 (en) Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs
EP1962342A4 (en) SUBSTRATE WITH BUILT-IN CHIP AND METHOD FOR PRODUCING THE SUBSTRATE WITH BUILT-IN CHIP
TW200511422A (en) Treatment or processing of substrate surfaces
WO2008045165A3 (en) In-line furnace conveyors with integrated wafer retainers
SG116648A1 (en) Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same.
AU2003234260A1 (en) Robot for handling semiconductor wafers
WO2006096639A3 (en) Semiconductor package fabrication
EP1909315A4 (en) SILICON PLATE AND METHOD FOR PRODUCING SAME
WO2008067098A3 (en) Applications of polycrystalline wafers
TW200619108A (en) Cushion for packing disks such as semiconductor wafers
EP1850375A4 (en) SEMICONDUCTOR WAFER SURFACE COVER AND SEMICONDUCTOR WAFER PROTECTION WITH SUCH A PROTECTIVE BLADE
WO2007006166A3 (de) Vorrichtung zur lagerung von substraten
WO2007065023A3 (en) Processes for obtaining lignan extracts and compositions containing the lignan extracts