KR20070100617A - 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체 - Google Patents

고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체 Download PDF

Info

Publication number
KR20070100617A
KR20070100617A KR1020060053675A KR20060053675A KR20070100617A KR 20070100617 A KR20070100617 A KR 20070100617A KR 1020060053675 A KR1020060053675 A KR 1020060053675A KR 20060053675 A KR20060053675 A KR 20060053675A KR 20070100617 A KR20070100617 A KR 20070100617A
Authority
KR
South Korea
Prior art keywords
compressible
stretchable
electronic circuit
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020060053675A
Other languages
English (en)
Korean (ko)
Inventor
존 에이. 로저스
강달영
선유강
Original Assignee
더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 filed Critical 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈
Publication of KR20070100617A publication Critical patent/KR20070100617A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020060053675A 2006-04-07 2006-06-14 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체 Ceased KR20070100617A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79010406P 2006-04-07 2006-04-07
US60/790,104 2006-04-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020130131753A Division KR20130133733A (ko) 2006-04-07 2013-10-31 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체

Publications (1)

Publication Number Publication Date
KR20070100617A true KR20070100617A (ko) 2007-10-11

Family

ID=38682516

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020060053675A Ceased KR20070100617A (ko) 2006-04-07 2006-06-14 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체
KR1020130131753A Ceased KR20130133733A (ko) 2006-04-07 2013-10-31 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020140096828A Ceased KR20140107158A (ko) 2006-04-07 2014-07-29 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR20150040631A Ceased KR20150044865A (ko) 2006-04-07 2015-03-24 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020170080342A Ceased KR20170077097A (ko) 2006-04-07 2017-06-26 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020130131753A Ceased KR20130133733A (ko) 2006-04-07 2013-10-31 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020140096828A Ceased KR20140107158A (ko) 2006-04-07 2014-07-29 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR20150040631A Ceased KR20150044865A (ko) 2006-04-07 2015-03-24 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020170080342A Ceased KR20170077097A (ko) 2006-04-07 2017-06-26 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체

Country Status (4)

Country Link
JP (6) JP2007281406A (enExample)
KR (5) KR20070100617A (enExample)
MY (4) MY151572A (enExample)
TW (7) TWI427802B (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010081137A3 (en) * 2009-01-12 2010-11-04 Mc10, Inc. Methods and applications of non-planar imaging arrays
KR101048356B1 (ko) * 2009-06-08 2011-07-14 서울대학교산학협력단 잡아 늘일 수 있는 전자소자들의 금속 연결 구조 및 그 제조방법
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
KR20150041501A (ko) * 2013-10-08 2015-04-16 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
KR20160040048A (ko) * 2014-10-02 2016-04-12 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10213985B2 (en) 2010-01-14 2019-02-26 Sungkyunkwan University Foundation For Corporate Collaboration Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
KR20190091861A (ko) * 2018-01-29 2019-08-07 충북대학교 산학협력단 구리 전극 제작 방법 및 구리 전극 제작 시스템

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101120433B (zh) 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
TWI427802B (zh) * 2005-06-02 2014-02-21 美國伊利諾大學理事會 可印刷半導體結構及製造和組合之相關方法
CN101681695B (zh) * 2006-09-06 2013-04-10 伊利诺伊大学评议会 在用于可拉伸电子元件的半导体互连和纳米膜中的受控弯曲结构
CN105826345B (zh) * 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
US8134163B2 (en) * 2008-08-11 2012-03-13 Taiwan Semiconductor Manfacturing Co., Ltd. Light-emitting diodes on concave texture substrate
US8519379B2 (en) * 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
WO2012091498A1 (ko) * 2010-12-31 2012-07-05 성균관대학교산학협력단 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
TWI524825B (zh) 2012-10-29 2016-03-01 財團法人工業技術研究院 碳材導電膜的轉印方法
FR2997554B1 (fr) * 2012-10-31 2016-04-08 Soitec Silicon On Insulator Procede de modification d'un etat de contrainte initial d'une couche active vers un etat de contrainte final
KR101447238B1 (ko) * 2014-06-20 2014-10-08 한국기계연구원 양자점 박막 형성 방법
KR102255198B1 (ko) * 2014-08-12 2021-05-25 삼성디스플레이 주식회사 스트레처블 기판 및 이를 구비한 유기 발광 표시 장치
JP6369788B2 (ja) 2014-11-27 2018-08-08 パナソニックＩｐマネジメント株式会社 エレクトロニクス用構造体
WO2016084345A1 (en) 2014-11-27 2016-06-02 Panasonic Intellectual Property Management Co., Ltd. Sheet-shaped stretchable structure, and resin composition for stretchable resin sheet and stretchable resin sheet used for the structure
KR101630817B1 (ko) 2014-12-10 2016-06-15 한국과학기술연구원 굴곡진 금속 나노와이어 네트워크, 이를 포함하는 신축성 투명전극 및 이의 제조방법
US10297575B2 (en) * 2016-05-06 2019-05-21 Amkor Technology, Inc. Semiconductor device utilizing an adhesive to attach an upper package to a lower die
KR102250527B1 (ko) * 2016-12-08 2021-05-10 고려대학교 산학협력단 가변 칼라 필터 필름 및 변형률 측정 장치
WO2019074111A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11284507B2 (en) 2017-10-12 2022-03-22 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
TWI754106B (zh) 2017-10-12 2022-02-01 日商大日本印刷股份有限公司 配線基板及配線基板的製造方法
US10959326B2 (en) 2017-11-07 2021-03-23 Dai Nippon Printing Co., Ltd. Stretchable circuit substrate and article
KR102027115B1 (ko) * 2017-11-28 2019-10-01 고려대학교 세종산학협력단 유기광전소자 및 이의 제조방법
KR102119009B1 (ko) * 2018-03-08 2020-06-04 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102119023B1 (ko) * 2018-04-23 2020-06-04 포항공과대학교 산학협력단 2종 이상의 올리고머를 이용한 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102554461B1 (ko) * 2018-07-26 2023-07-10 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR102172349B1 (ko) * 2018-09-14 2020-10-30 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
EP3876682A4 (en) 2018-10-31 2022-12-07 Dai Nippon Printing Co., Ltd. CIRCUIT BOARD AND PROCESS OF MAKING THE CIRCUIT BOARD
KR102779787B1 (ko) 2018-10-31 2025-03-12 다이니폰 인사츠 가부시키가이샤 배선 기판 및 배선 기판의 제조 방법
EP3883352A4 (en) 2018-11-16 2022-08-31 Dai Nippon Printing Co., Ltd. CIRCUIT SUBSTRATE AND METHOD OF MAKING THE CIRCUIT SUBSTRATE
US11395404B2 (en) 2018-11-16 2022-07-19 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing the wiring board
JP7249512B2 (ja) * 2018-11-30 2023-03-31 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP6826786B1 (ja) * 2019-03-20 2021-02-10 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111554638B (zh) * 2020-04-16 2023-09-08 上海交通大学 用于可拉伸电子装置的基底及其制备方法
US11699677B2 (en) * 2020-06-30 2023-07-11 Openlight Photonics, Inc. Die-to-wafer bonding utilizing micro-transfer printing
CN111952322B (zh) * 2020-08-14 2022-06-03 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
CN114258185A (zh) * 2020-09-24 2022-03-29 北京梦之墨科技有限公司 一种电子器件及其制备方法
CN112366250B (zh) * 2020-11-17 2022-11-15 佛山市国星半导体技术有限公司 一种GaN基紫外探测器及其制作方法
KR102412729B1 (ko) 2021-01-18 2022-06-23 연세대학교 산학협력단 신축성 디스플레이 장치
WO2025187670A1 (ja) * 2024-03-04 2025-09-12 国立大学法人大阪大学 薄膜デバイスおよび薄膜デバイスの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482673B2 (en) * 1996-10-17 2002-11-19 Seiko Epson Corporation Semiconductor device, method of making the same, circuit board, flexible substrate, and method of making substrate
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
US6566273B2 (en) * 2001-06-27 2003-05-20 Infineon Technologies Ag Etch selectivity inversion for etching along crystallographic directions in silicon
EP1506568B1 (en) * 2002-04-29 2016-06-01 Samsung Electronics Co., Ltd. Direct-connect signaling system
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US7704684B2 (en) * 2003-12-01 2010-04-27 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating three-dimensional nanoscale structures
JP5110766B2 (ja) * 2003-12-15 2012-12-26 株式会社半導体エネルギー研究所 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法
KR101207442B1 (ko) * 2003-12-15 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막 집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로 장치를 가지는 아이디 태그 및 동전
JP4841807B2 (ja) * 2004-02-27 2011-12-21 株式会社半導体エネルギー研究所 薄膜集積回路及び薄型半導体装置
KR101185613B1 (ko) * 2004-04-27 2012-09-24 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 소프트 리소그래피용 복합 패터닝 장치
CN101120433B (zh) * 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
TWI427802B (zh) * 2005-06-02 2014-02-21 美國伊利諾大學理事會 可印刷半導體結構及製造和組合之相關方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
WO2010081137A3 (en) * 2009-01-12 2010-11-04 Mc10, Inc. Methods and applications of non-planar imaging arrays
KR101048356B1 (ko) * 2009-06-08 2011-07-14 서울대학교산학협력단 잡아 늘일 수 있는 전자소자들의 금속 연결 구조 및 그 제조방법
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10213985B2 (en) 2010-01-14 2019-02-26 Sungkyunkwan University Foundation For Corporate Collaboration Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
KR20150041501A (ko) * 2013-10-08 2015-04-16 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
KR20160040048A (ko) * 2014-10-02 2016-04-12 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
KR20220027138A (ko) * 2014-10-02 2022-03-07 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
KR20190091861A (ko) * 2018-01-29 2019-08-07 충북대학교 산학협력단 구리 전극 제작 방법 및 구리 전극 제작 시스템

Also Published As

Publication number Publication date
JP6377689B2 (ja) 2018-08-22
JP5851457B2 (ja) 2016-02-03
JP6140207B2 (ja) 2017-05-31
TWI427802B (zh) 2014-02-21
TWI533459B (zh) 2016-05-11
TWI466488B (zh) 2014-12-21
TW201428984A (zh) 2014-07-16
JP2017103459A (ja) 2017-06-08
MY152238A (en) 2014-09-15
JP2019004151A (ja) 2019-01-10
JP6574157B2 (ja) 2019-09-11
TW200739681A (en) 2007-10-16
TWI570776B (zh) 2017-02-11
TWI336491B (en) 2011-01-21
JP2014017495A (ja) 2014-01-30
TW201042951A (en) 2010-12-01
TWI489523B (zh) 2015-06-21
JP2017038064A (ja) 2017-02-16
JP2015133510A (ja) 2015-07-23
KR20130133733A (ko) 2013-12-09
JP2007281406A (ja) 2007-10-25
KR20170077097A (ko) 2017-07-05
TW201216641A (en) 2012-04-16
MY143492A (en) 2011-05-31
TW200721517A (en) 2007-06-01
KR20150044865A (ko) 2015-04-27
TW201519287A (zh) 2015-05-16
MY163588A (en) 2017-09-29
KR20140107158A (ko) 2014-09-04
TW201717261A (zh) 2017-05-16
MY151572A (en) 2014-06-13

Similar Documents

Publication Publication Date Title
KR20070100617A (ko) 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체
US11456258B2 (en) Stretchable form of single crystal silicon for high performance electronics on rubber substrates
KR101612749B1 (ko) 2차원 인장 가능하고 구부릴 수 있는 장치

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20060614

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20110614

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20060614

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20121112

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20130730

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20121112

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20131030

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20130730

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20131129

Appeal identifier: 2013101007824

Request date: 20131030

A107 Divisional application of patent
PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20131031

Patent event code: PA01071R01D

J121 Written withdrawal of request for trial
PC1202 Submission of document of withdrawal before decision of registration

Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment)

Patent event code: PC12021R01D

Patent event date: 20131129

PJ1201 Withdrawal of trial

Patent event code: PJ12011R01D

Patent event date: 20131129

Comment text: Written Withdrawal of Request for Trial

Appeal identifier: 2013101007824

Request date: 20131030

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20131129

WITB Written withdrawal of application