JP2007205908A - 重量センサ - Google Patents
重量センサ Download PDFInfo
- Publication number
- JP2007205908A JP2007205908A JP2006025455A JP2006025455A JP2007205908A JP 2007205908 A JP2007205908 A JP 2007205908A JP 2006025455 A JP2006025455 A JP 2006025455A JP 2006025455 A JP2006025455 A JP 2006025455A JP 2007205908 A JP2007205908 A JP 2007205908A
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- Prior art keywords
- strain
- insulating
- paste
- weight sensor
- insulating layer
- Prior art date
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
Abstract
【解決手段】複数の貫通孔10を有し荷重により歪を生じる金属板(ステンレス板)からなる起歪体12と、この起歪体12の貫通孔10の間に配置され歪量に応じて抵抗値が変化する4つの抵抗素子14と、抵抗素子14の両端部に接続した電極16と、配線パターン17を介して電極16と結線された信号処理回路18とを備え、抵抗素子14および電極16および配線パターン17は起歪体12上に配置した絶縁ガラスからなる絶縁層20上に絶縁層20とともに同時焼成して形成され、焼成前の電極16および配線パターンは粒径が2.0μm〜10.0μmのAg粒子を含有し、焼成前の絶縁層には1.0重量%〜3.0重量%の無機フィラーを添加した構成である。
【選択図】図1
Description
12 起歪体
14 抵抗素子
16 電極
17 配線パターン
18 信号処理回路
19 CPU
20 絶縁層
28 ホーイストンブリッジ回路
Claims (4)
- 荷重により歪を生じる金属板からなる起歪体と、前記起歪体に配置され歪量に応じて抵抗値が変化する抵抗素子と、前記抵抗素子に接続した導体とを備え、前記抵抗素子および前記導体は前記起歪体上に配置した絶縁ガラスからなる絶縁層上に形成するとともに、前記導体および前記絶縁ガラスは同時焼成して形成しており、焼成前の前記導体は粒径が2.0μm〜10.0μmのAg粒子を含有するとともに、焼成前の前記絶縁ガラスは無機フィラーを含有する重量センサ。
- 焼成前の前記絶縁ガラスに含有する無機フィラーの添加量は1.0重量%〜3.0重量%とした請求項1記載の重量センサ。
- 荷重により歪を生じる金属板からなる起歪体に、絶縁ガラスからなる絶縁層を形成する工程と、歪量に応じて抵抗値が変化する抵抗素子および前記抵抗素子に接続した導体とを前記絶縁層上に形成する工程とを備え、前記導体および前記絶縁層は、前記起歪体上にガラス粒子と無機フィラーを含有した絶縁ペーストを塗布するとともに前記絶縁ペースト上にAg粒子を含有したAgペーストを塗布し、前記絶縁ペーストと前記Agペーストとを同時焼成して形成し、かつ、前記Agペーストは粒径が2.0μm〜10.0μmのAg粒子を含有する重量センサの製造方法。
- 前記絶縁ペーストには1.0重量%〜3.0重量%の無機フィラーを添加する請求項3記載の重量センサの製造方法。
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JP2006025455A JP2007205908A (ja) | 2006-02-02 | 2006-02-02 | 重量センサ |
US12/160,960 US7933127B2 (en) | 2006-02-02 | 2007-01-24 | Memory card and memory card manufacturing method |
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CN101689252A (zh) * | 2007-06-15 | 2010-03-31 | 松下电器产业株式会社 | 存储卡及其制造方法 |
JP2010079445A (ja) * | 2008-09-24 | 2010-04-08 | Toshiba Corp | Ssd装置 |
USD794643S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
USD795261S1 (en) * | 2009-01-07 | 2017-08-22 | Samsung Electronics Co., Ltd. | Memory device |
USD794641S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
USD794642S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
USD794034S1 (en) * | 2009-01-07 | 2017-08-08 | Samsung Electronics Co., Ltd. | Memory device |
USD794644S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
USD795262S1 (en) * | 2009-01-07 | 2017-08-22 | Samsung Electronics Co., Ltd. | Memory device |
CN110959314A (zh) * | 2017-08-04 | 2020-04-03 | 株式会社藤仓 | 多层印刷布线板的制造方法以及多层印刷布线板 |
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