JP2007189061A5 - - Google Patents

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Publication number
JP2007189061A5
JP2007189061A5 JP2006005956A JP2006005956A JP2007189061A5 JP 2007189061 A5 JP2007189061 A5 JP 2007189061A5 JP 2006005956 A JP2006005956 A JP 2006005956A JP 2006005956 A JP2006005956 A JP 2006005956A JP 2007189061 A5 JP2007189061 A5 JP 2007189061A5
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JP
Japan
Prior art keywords
insulating film
interlayer insulating
wiring
barrier metal
copper alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006005956A
Other languages
English (en)
Japanese (ja)
Other versions
JP5014632B2 (ja
JP2007189061A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2006005956A external-priority patent/JP5014632B2/ja
Priority to JP2006005956A priority Critical patent/JP5014632B2/ja
Priority to TW096100146A priority patent/TWI440135B/zh
Priority to CN2011100673949A priority patent/CN102157489B/zh
Priority to CN2010101941593A priority patent/CN101872756B/zh
Priority to KR1020070003795A priority patent/KR20070076465A/ko
Priority to US11/622,767 priority patent/US7700487B2/en
Priority to CN2007100022053A priority patent/CN101000905B/zh
Publication of JP2007189061A publication Critical patent/JP2007189061A/ja
Publication of JP2007189061A5 publication Critical patent/JP2007189061A5/ja
Priority to US12/714,039 priority patent/US7816268B2/en
Priority to US12/880,520 priority patent/US8097948B2/en
Publication of JP5014632B2 publication Critical patent/JP5014632B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006005956A 2006-01-13 2006-01-13 半導体装置および半導体装置の製造方法 Active JP5014632B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2006005956A JP5014632B2 (ja) 2006-01-13 2006-01-13 半導体装置および半導体装置の製造方法
TW096100146A TWI440135B (zh) 2006-01-13 2007-01-03 半導體裝置及半導體裝置之製造方法
CN2007100022053A CN101000905B (zh) 2006-01-13 2007-01-12 半导体装置以及半导体装置的制造方法
CN2010101941593A CN101872756B (zh) 2006-01-13 2007-01-12 半导体装置以及半导体装置的制造方法
KR1020070003795A KR20070076465A (ko) 2006-01-13 2007-01-12 반도체 장치 및 반도체 장치의 제조 방법
US11/622,767 US7700487B2 (en) 2006-01-13 2007-01-12 Semiconductor device and manufacturing method of semiconductor device
CN2011100673949A CN102157489B (zh) 2006-01-13 2007-01-12 半导体装置以及半导体装置的制造方法
US12/714,039 US7816268B2 (en) 2006-01-13 2010-02-26 Semiconductor device and manufacturing method of semiconductor device
US12/880,520 US8097948B2 (en) 2006-01-13 2010-09-13 Semiconductor device and manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006005956A JP5014632B2 (ja) 2006-01-13 2006-01-13 半導体装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012108616A Division JP5485333B2 (ja) 2012-05-10 2012-05-10 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007189061A JP2007189061A (ja) 2007-07-26
JP2007189061A5 true JP2007189061A5 (enExample) 2009-02-19
JP5014632B2 JP5014632B2 (ja) 2012-08-29

Family

ID=38263776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006005956A Active JP5014632B2 (ja) 2006-01-13 2006-01-13 半導体装置および半導体装置の製造方法

Country Status (5)

Country Link
US (3) US7700487B2 (enExample)
JP (1) JP5014632B2 (enExample)
KR (1) KR20070076465A (enExample)
CN (3) CN102157489B (enExample)
TW (1) TWI440135B (enExample)

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DE102007004867B4 (de) * 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
US20090001584A1 (en) * 2007-06-26 2009-01-01 Sang-Chul Kim Semiconductor device and method for fabricating the same
JP2010087094A (ja) * 2008-09-30 2010-04-15 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
JP5622433B2 (ja) * 2010-04-28 2014-11-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6300533B2 (ja) * 2014-01-15 2018-03-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US10756208B2 (en) 2014-11-25 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated chip and method of forming the same
US11164970B2 (en) 2014-11-25 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact field plate
US9590053B2 (en) 2014-11-25 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Methodology and structure for field plate design
EP3381064A4 (en) * 2015-11-23 2019-08-21 Intel Corporation ELECTRICAL CONTACTS FOR MAGNETORESISTIVE DIRECT ACCESS MEMORY DEVICES
US9799605B2 (en) 2015-11-25 2017-10-24 International Business Machines Corporation Advanced copper interconnects with hybrid microstructure
US9704804B1 (en) * 2015-12-18 2017-07-11 Texas Instruments Incorporated Oxidation resistant barrier metal process for semiconductor devices
US10923393B2 (en) * 2018-09-24 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contacts and interconnect structures in field-effect transistors
US11227794B2 (en) 2019-12-19 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure
US12230552B2 (en) 2021-11-18 2025-02-18 Qualcomm Incorporated Recess structure for padless stack via
CN115274594B (zh) * 2022-09-19 2022-12-16 合肥晶合集成电路股份有限公司 一种半导体结构及其制作方法

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JP4647184B2 (ja) * 2002-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JP4527393B2 (ja) * 2003-12-26 2010-08-18 株式会社神戸製鋼所 半導体装置用Ｃｕ系合金配線及びその製造方法
JP4832807B2 (ja) * 2004-06-10 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
US8188600B2 (en) * 2004-06-24 2012-05-29 Nec Corporation Semiconductor device and method of fabricating the same
JP2006165115A (ja) * 2004-12-03 2006-06-22 Toshiba Corp 半導体装置
US7332428B2 (en) * 2005-02-28 2008-02-19 Infineon Technologies Ag Metal interconnect structure and method
JP4589835B2 (ja) * 2005-07-13 2010-12-01 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
JP2007053133A (ja) * 2005-08-15 2007-03-01 Toshiba Corp 半導体装置及びその製造方法
JP5014632B2 (ja) * 2006-01-13 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

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