TWI440135B - 半導體裝置及半導體裝置之製造方法 - Google Patents

半導體裝置及半導體裝置之製造方法 Download PDF

Info

Publication number
TWI440135B
TWI440135B TW096100146A TW96100146A TWI440135B TW I440135 B TWI440135 B TW I440135B TW 096100146 A TW096100146 A TW 096100146A TW 96100146 A TW96100146 A TW 96100146A TW I440135 B TWI440135 B TW I440135B
Authority
TW
Taiwan
Prior art keywords
copper alloy
barrier metal
interlayer insulating
insulating film
alloy wiring
Prior art date
Application number
TW096100146A
Other languages
English (en)
Chinese (zh)
Other versions
TW200735275A (en
Inventor
古澤健志
兒玉大介
松本雅弘
宮崎博史
Original Assignee
瑞薩電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子股份有限公司 filed Critical 瑞薩電子股份有限公司
Publication of TW200735275A publication Critical patent/TW200735275A/zh
Application granted granted Critical
Publication of TWI440135B publication Critical patent/TWI440135B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47L—DOMESTIC WASHING OR CLEANING; SUCTION CLEANERS IN GENERAL
    • A47L15/00—Washing or rinsing machines for crockery or tableware
    • A47L15/42—Details
    • A47L15/4285—Water-heater arrangements
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47L—DOMESTIC WASHING OR CLEANING; SUCTION CLEANERS IN GENERAL
    • A47L15/00—Washing or rinsing machines for crockery or tableware
    • A47L15/0076—Washing or rinsing machines for crockery or tableware of non-domestic use type, e.g. commercial dishwashers for bars, hotels, restaurants, canteens or hospitals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47L—DOMESTIC WASHING OR CLEANING; SUCTION CLEANERS IN GENERAL
    • A47L2501/00—Output in controlling method of washing or rinsing machines for crockery or tableware, i.e. quantities or components controlled, or actions performed by the controlling device executing the controlling method
    • A47L2501/06—Water heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096100146A 2006-01-13 2007-01-03 半導體裝置及半導體裝置之製造方法 TWI440135B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006005956A JP5014632B2 (ja) 2006-01-13 2006-01-13 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200735275A TW200735275A (en) 2007-09-16
TWI440135B true TWI440135B (zh) 2014-06-01

Family

ID=38263776

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100146A TWI440135B (zh) 2006-01-13 2007-01-03 半導體裝置及半導體裝置之製造方法

Country Status (5)

Country Link
US (3) US7700487B2 (enExample)
JP (1) JP5014632B2 (enExample)
KR (1) KR20070076465A (enExample)
CN (3) CN101872756B (enExample)
TW (1) TWI440135B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5014632B2 (ja) * 2006-01-13 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
DE102007004867B4 (de) * 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
US20090001584A1 (en) * 2007-06-26 2009-01-01 Sang-Chul Kim Semiconductor device and method for fabricating the same
JP2010087094A (ja) * 2008-09-30 2010-04-15 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
JP5622433B2 (ja) * 2010-04-28 2014-11-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6300533B2 (ja) * 2014-01-15 2018-03-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US11164970B2 (en) 2014-11-25 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact field plate
US10756208B2 (en) 2014-11-25 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated chip and method of forming the same
US9590053B2 (en) 2014-11-25 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Methodology and structure for field plate design
US10411068B2 (en) 2015-11-23 2019-09-10 Intel Corporation Electrical contacts for magnetoresistive random access memory devices
US9799605B2 (en) 2015-11-25 2017-10-24 International Business Machines Corporation Advanced copper interconnects with hybrid microstructure
US9704804B1 (en) * 2015-12-18 2017-07-11 Texas Instruments Incorporated Oxidation resistant barrier metal process for semiconductor devices
US10923393B2 (en) * 2018-09-24 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contacts and interconnect structures in field-effect transistors
US11227794B2 (en) * 2019-12-19 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure
US12230552B2 (en) * 2021-11-18 2025-02-18 Qualcomm Incorporated Recess structure for padless stack via
CN115274594B (zh) * 2022-09-19 2022-12-16 合肥晶合集成电路股份有限公司 一种半导体结构及其制作方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547760A (ja) * 1991-08-12 1993-02-26 Hitachi Ltd 半導体集積回路装置、その製造方法およびその製造に用いるスパツタターゲツト
JP2701730B2 (ja) * 1994-02-24 1998-01-21 日本電気株式会社 半導体装置およびその製造方法
US6285082B1 (en) * 1995-01-03 2001-09-04 International Business Machines Corporation Soft metal conductor
EP0751567B1 (en) * 1995-06-27 2007-11-28 International Business Machines Corporation Copper alloys for chip interconnections and method of making
JPH11186273A (ja) * 1997-12-19 1999-07-09 Ricoh Co Ltd 半導体装置及びその製造方法
JP3040745B2 (ja) * 1998-01-12 2000-05-15 松下電子工業株式会社 半導体装置及びその製造方法
JP3840650B2 (ja) * 1998-01-21 2006-11-01 株式会社トリケミカル研究所 配線用銅合金膜形成材料および配線用銅合金膜形成方法
JP3149846B2 (ja) 1998-04-17 2001-03-26 日本電気株式会社 半導体装置及びその製造方法
TW408443B (en) * 1998-06-08 2000-10-11 United Microelectronics Corp The manufacture method of dual damascene
KR100329153B1 (ko) * 1998-07-08 2002-03-21 구마모토 마사히로 단자 및 커넥터용 구리합금 및 그 제조방법
KR100385042B1 (ko) * 1998-12-03 2003-06-18 인터내셔널 비지네스 머신즈 코포레이션 내 일렉트로 마이그레이션의 구조물을 도핑으로 형성하는 방법
JP2000208517A (ja) * 1999-01-12 2000-07-28 Fujitsu Ltd 半導体装置の製造方法
JP2000349085A (ja) * 1999-06-01 2000-12-15 Nec Corp 半導体装置及び半導体装置の製造方法
KR20020070443A (ko) * 1999-11-24 2002-09-09 허니웰 인터내셔널 인코포레이티드 전도성 상호연결장치
JP4686008B2 (ja) * 2000-05-31 2011-05-18 株式会社東芝 スパッタリングターゲットとそれを用いたＣｕ膜および電子デバイス
JP2002075995A (ja) 2000-08-24 2002-03-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100385227B1 (ko) * 2001-02-12 2003-05-27 삼성전자주식회사 구리 다층 배선을 가지는 반도체 장치 및 그 형성방법
KR100550505B1 (ko) * 2001-03-01 2006-02-13 가부시끼가이샤 도시바 반도체 장치 및 반도체 장치의 제조 방법
JP3540302B2 (ja) 2001-10-19 2004-07-07 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP2004014626A (ja) * 2002-06-04 2004-01-15 Applied Materials Inc シード膜及びその形成方法、Ｃｕ配線及びその形成方法、半導体装置及びその製造方法、並びに半導体装置の製造装置。
JP4647184B2 (ja) * 2002-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2004349609A (ja) * 2003-05-26 2004-12-09 Renesas Technology Corp 半導体装置およびその製造方法
JP4527393B2 (ja) * 2003-12-26 2010-08-18 株式会社神戸製鋼所 半導体装置用Ｃｕ系合金配線及びその製造方法
JP4832807B2 (ja) * 2004-06-10 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
JP5012022B2 (ja) * 2004-06-24 2012-08-29 日本電気株式会社 半導体装置及びその製造方法
JP2006165115A (ja) * 2004-12-03 2006-06-22 Toshiba Corp 半導体装置
US7332428B2 (en) * 2005-02-28 2008-02-19 Infineon Technologies Ag Metal interconnect structure and method
JP4589835B2 (ja) * 2005-07-13 2010-12-01 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
JP2007053133A (ja) * 2005-08-15 2007-03-01 Toshiba Corp 半導体装置及びその製造方法
JP5014632B2 (ja) * 2006-01-13 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
CN101000905B (zh) 2011-05-18
CN102157489B (zh) 2013-02-06
CN101872756A (zh) 2010-10-27
JP2007189061A (ja) 2007-07-26
TW200735275A (en) 2007-09-16
US20100327449A1 (en) 2010-12-30
JP5014632B2 (ja) 2012-08-29
US7816268B2 (en) 2010-10-19
KR20070076465A (ko) 2007-07-24
CN102157489A (zh) 2011-08-17
CN101872756B (zh) 2013-01-02
CN101000905A (zh) 2007-07-18
US7700487B2 (en) 2010-04-20
US20100151673A1 (en) 2010-06-17
US8097948B2 (en) 2012-01-17
US20070167010A1 (en) 2007-07-19

Similar Documents

Publication Publication Date Title
CN101000905B (zh) 半导体装置以及半导体装置的制造方法
US8216940B2 (en) Method for manufacturing a semiconductor device
US9064874B2 (en) Interconnect with titanium—oxide diffusion barrier
US8383509B2 (en) Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy and semiconductor device of this kind
JP5558790B2 (ja) 金属相互接続構造体及びこれを製造する方法
JP5089244B2 (ja) 半導体装置
US8102051B2 (en) Semiconductor device having an electrode and method for manufacturing the same
US9704740B2 (en) Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese
JPWO2004107434A1 (ja) 配線構造およびその製造方法
US20230088795A1 (en) Electro-migration barrier for interconnect
US20190237366A1 (en) Beol self-aligned interconnect structure
JP4878434B2 (ja) 半導体装置およびその製造方法
US6825561B1 (en) Structure and method for eliminating time dependent dielectric breakdown failure of low-k material
JP2003133312A (ja) 半導体装置およびその製造方法
JP5485333B2 (ja) 半導体装置の製造方法
JP2004172337A (ja) 半導体装置およびその製造方法
JP2009099833A (ja) 半導体装置及びその製造方法