JP5558790B2 - 金属相互接続構造体及びこれを製造する方法 - Google Patents
金属相互接続構造体及びこれを製造する方法 Download PDFInfo
- Publication number
- JP5558790B2 JP5558790B2 JP2009267389A JP2009267389A JP5558790B2 JP 5558790 B2 JP5558790 B2 JP 5558790B2 JP 2009267389 A JP2009267389 A JP 2009267389A JP 2009267389 A JP2009267389 A JP 2009267389A JP 5558790 B2 JP5558790 B2 JP 5558790B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- metal
- liner
- material layer
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 414
- 239000002184 metal Substances 0.000 title claims description 414
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 261
- 238000000034 method Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 176
- 230000008569 process Effects 0.000 description 22
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 230000009977 dual effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000412 polyarylene Polymers 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NCZAACDHEJVCBX-UHFFFAOYSA-N [Si]=O.[C] Chemical class [Si]=O.[C] NCZAACDHEJVCBX-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
- H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
下層誘電体材料層と、その中に埋め込まれ、下層金属性ライナ及びライン・レベル金属部分を含む金属ラインとを備える下層レベルの金属相互接続構造体と、
下層レベルの金属相互接続構造体に垂直方向に当接し、上層誘電体材料層と、上層金属ライナ及びビア・レベル金属部分を含む導電性ビアとを備える上層レベルの金属相互接続構造体と、
を備え、下層金属ライナは上層金属ライナに直接接触する、金属相互接続構造体が提供される。
下層誘電体材料層のパターン化された領域を垂直方向に凹ませることにより、ライン・トレンチ及び少なくとも1つの誘電体材料部分を、少なくとも1つの誘電体材料部分の側壁が少なくとも1つの誘電体材料部分を横方向に囲むか又は少なくとも1つの誘電体材料部分の側壁が横方向にライン・トレンチ内に突き出るように、形成することと、
ライン・トレンチ内に、下層金属ライナ及びライン・レベル金属部分を含む金属ラインを形成することと、
金属ライン上に上層誘電体材料層を形成することと、
上層誘電体材料層内に導電性ビアを形成することと、
を含み、下層金属ライナは上層金属ライナに直接接触する、方法が提供される。
後にライン・レベル金属部分を形成するための金属層に用いられる材料よりも高いエレクトロマイグレーション耐性を与える。
6、6′:上層レベルの金属相互接続構造体
10:下層誘電体材料層
12:誘電体材料部分
15:凹ませた面
17:最上面
19:ライン・トレンチ
19′:ビア・キャビティ
20:下層金属ライナ
30:ライン・レベル金属部分
40:上層誘電体材料層
42:随意的な誘電体キャップ層
50:上層金属ライナ
59:ビア・キャビティ
60:ビア・レベル金属部分
Claims (15)
- 金属ラインの形状のライン・トレンチが設けられた下層誘電体材料層であって、前記ライン・トレンチ内に、前記下層誘電体材料層と一体構造であって且つ互いに離間された2つの誘電体材料部分が設けられている、前記下層誘電体材料層と、
前記ライン・トレンチ内に埋め込まれた前記金属ラインであって、前記ライン・トレンチの側壁、前記2つの誘電体材料部分の側壁及び前記ライン・トレンチの底面に当接する下層金属ライナと、前記下層金属ライナに当接し前記ライン・トレンチを埋めるライン・レベル金属部分とを有する、前記金属ラインと、
前記下層誘電体材料層の上に設けられ、前記2つの誘電体材料部分相互間の領域に位置合わせされたビア・キャビティが貫通して設けられている上層誘電体材料層と、
前記ビア・キャビティ内に設けられた導電性ビアであって、前記ビア・キャビティの側壁と前記2つの誘電体材料部分相互間の領域内に存在する前記下層金属ライナ及び前記ライン・レベル金属部分に当接する上層金属ライナと、前記上層金属ライナに当接し、前記ビア・キャビティを埋めるビア・レベル金属部分とを有する、前記導電性ビアとを備え、
前記2つの誘電体材料部分は、前記2つの誘電体材料部分の離間方向に沿った前記導電性ビアの直径よりも小さな距離だけ離間されている、金属相互接続構造体。 - 前記上層金属ライナの底部分は、前記ライン・レベル金属部分の上面、前記下層金属ライナの上面及び前記誘電体材料部分の上面に当接する、請求項1に記載の金属相互接続構造体。
- 前記2つの誘電体材料部分の各々の上面は、前記下層誘電体材料層の最上面と同一平面にある、請求項1に記載の金属相互接続構造体。
- 前記誘電体材料部分は、前記下層金属ライナと、前記下層誘電体材料層と、前記上層誘電体材料層とによって閉じ込められ、
前記誘電体材料部分の底面は、前記下層誘電体材料層に垂直方向に当接する、請求項3に記載の金属相互接続構造体。 - 前記下層金属ライナの側壁は、前記下層誘電体材料層から前記導電性ビアに向かって横方向に凹まされ、
前記下層金属ライナの一部分は、前記誘電体材料部分に横方向に当接し、前記上層金属ライナに垂直方向に当接する、請求項1に記載の金属相互接続構造体。 - 前記2つの誘電体材料部分は、前記下層レベルの金属相互接続構造体と前記上層レベルの金属相互接続構造体との間の平面の界面に対して直角の垂直軸の回りのn回回転対称を有し、
nは1より大きい整数であり、
前記垂直軸は前記導電性ビアと交差し、
前記垂直軸から前記複数の誘電体材料部分の各々までの距離は、前記導電性ビアの直径の寸法よりも小さい、請求項1に記載の金属相互接続構造体。 - 前記ライン・レベル金属部分の材料は、銅、アルミニウム、タングステン、金、及び、銀のうちの1つであり、前記下層金属ライナ及び前記上層金属ライナの各々の材料は、導電性金属Ti、Ta、及びCoWPの窒化物のうちの1つである、請求項1に記載の金属相互接続構造体。
- 前記下層誘電体材料層及び前記上層誘電体材料層の各々の材料は、酸化シリコン、窒化シリコン、酸窒化シリコン、有機シリケートガラス(OSG)、3.0未満の誘電定数を有する低k化学気相堆積(CVD)酸化物、スピンオン・ガラス(SOG)、及び、3.0未満の誘電定数を有するスピンオン低k誘電体材料のうちの少なくとも1つである、請求項1に記載の金属相互接続構造体。
- 金属相互接続構造体を製造する方法であって、
下層誘電体材料層の一部分を垂直方向に凹ませることにより、金属ラインの形状のライン・トレンチを形成するステップであって、前記ライン・トレンチ内に、前記下層誘電体材料層と一体構造であって且つ互いに離間された2つの誘電体材料部分が設けられている、前記ステップと、
前記ライン・トレンチの側壁、前記2つの誘電体材料部分の側壁及び前記ライン・トレンチの底面に当接して下層金属ライナを形成し、前記下層金属ライナに当接して前記ライン・トレンチを埋めるライン・レベル金属部分を形成することにより、前記下層金属ライナ及び前記ライン・レベル金属部分から成る前記金属ラインを形成するステップと、
前記下層誘電体材料層及び前記金属ライン上に上層誘電体材料層を形成するステップと、
前記2つの誘電体材料部分相互間の領域に位置合わせして前記上層誘電体材料層を貫通するビア・キャビティを形成し、前記ビア・キャビティの側壁と前記2つの誘電体材料部分相互間の領域内に存在する前記下層金属ライナ及び前記ライン・レベル金属部分に当接する上層金属ライナを形成し、前記上層金属ライナに当接し前記ビア・キャビティを埋めるビア・レベル金属部分を形成することにより、前記上層誘電体材料層内に導電性ビアを形成するステップとを含み、
前記2つの誘電体材料部分は、前記2つの誘電体材料部分の離間方向に沿った前記導電性ビアの直径よりも小さな距離だけ離間されている、前記方法。 - 前記上層金属ライナの底部分は、前記ライン・レベル金属部分の上面、前記下層金属ライナの上面及び前記誘電体材料部分の上面に当接する、請求項9に記載の方法。
- 前記2つの誘電体材料部分の各々の上面は、前記下層誘電体材料層の最上面と同一平面にある、請求項9に記載の方法。
- 前記2つの誘電体材料部分の各々の上面は、前記下層誘電体材料層の最上面と同一平面にあり、
前記2つの誘電体材料部分のうちの一方の側壁は、前記ライン・トレンチの側壁の一部分を構成し、
前記下層誘電体材料層の前記最上面は、前記下層金属ライナ及び前記ライン・レベル金属部分の上面と同一平面にある、請求項9に記載の方法。 - 前記2つの誘電体材料部分の一部分、前記下層金属ライナの一部分、及びライン・レベル金属部分の一部分が、前記ビア・キャビティの底面に露出する、請求項12に記載の方法。
- 前記下層金属ライナの一部分は、前記2つの誘電体材料部分に横方向に当接し且つそれを囲み、
前記下層金属ライナの前記一部分は、前記ライン・レベル金属部分に横方向に当接し且つそれにより囲まれ、前記上層金属ライナに垂直方向に当接する、請求項9に記載の方法。 - 前記下層金属ライナの側壁は、前記下層誘電体材料層から前記導電性ビアに向かって横方向に凹まされ、
前記下層金属ライナの一部分は、前記誘電体材料部分に横方向に当接し、前記上層金属ライナに垂直方向に当接する、請求項9に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/344,838 US8114768B2 (en) | 2008-12-29 | 2008-12-29 | Electromigration resistant via-to-line interconnect |
US12/344838 | 2008-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010157697A JP2010157697A (ja) | 2010-07-15 |
JP5558790B2 true JP5558790B2 (ja) | 2014-07-23 |
Family
ID=42283903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009267389A Expired - Fee Related JP5558790B2 (ja) | 2008-12-29 | 2009-11-25 | 金属相互接続構造体及びこれを製造する方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8114768B2 (ja) |
JP (1) | JP5558790B2 (ja) |
KR (1) | KR20100080325A (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5251639B2 (ja) * | 2009-03-16 | 2013-07-31 | 富士通セミコンダクター株式会社 | 半導体装置の設計検証装置 |
US8288268B2 (en) | 2010-04-29 | 2012-10-16 | International Business Machines Corporation | Microelectronic structure including air gap |
US20110285401A1 (en) * | 2010-05-21 | 2011-11-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for Determining the Lifetime of Interconnects |
US8119522B1 (en) | 2010-11-08 | 2012-02-21 | International Business Machines Corporation | Method of fabricating damascene structures |
US8487447B2 (en) | 2011-05-19 | 2013-07-16 | International Business Machines Corporation | Semiconductor structure having offset passivation to reduce electromigration |
US9224643B2 (en) * | 2011-09-19 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for tunable interconnect scheme |
US9293410B2 (en) | 2013-11-29 | 2016-03-22 | Samsung Electronics Co., Ltd. | Semiconductor device |
US9349608B2 (en) * | 2013-12-13 | 2016-05-24 | Globalfoundries Inc. | Methods of protecting a dielectric mask layer and related semiconductor devices |
US20150255388A1 (en) | 2014-03-09 | 2015-09-10 | International Business Machines Corporation | Enhancement of iso-via reliability |
US9431343B1 (en) * | 2015-03-11 | 2016-08-30 | Samsung Electronics Co., Ltd. | Stacked damascene structures for microelectronic devices |
FR3050570A1 (fr) * | 2016-04-21 | 2017-10-27 | Commissariat Energie Atomique | Structure d'interconnexion electrique multi-niveaux a distribution de densite de courant optimisee |
US10423752B2 (en) * | 2017-09-29 | 2019-09-24 | International Business Machines Corporation | Semiconductor package metal shadowing checks |
US10361120B2 (en) * | 2017-11-30 | 2019-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Conductive feature formation and structure |
WO2019132889A1 (en) | 2017-12-27 | 2019-07-04 | Intel Corporation | Integrated circuits with line breaks and line bridges within a single interconnect level |
US10971393B2 (en) | 2017-12-27 | 2021-04-06 | Intel Corporation | Metal-insulator-metal (MIM) structure supporting high voltage applications and low voltage applications |
WO2019132899A1 (en) * | 2017-12-27 | 2019-07-04 | Intel Corporation | Integrated circuits (ics) with electromigration (em)-resistant segments in an interconnect level |
CN111133599A (zh) | 2017-12-27 | 2020-05-08 | 英特尔公司 | 多层金属-绝缘体-金属(mim)结构 |
US11728272B2 (en) * | 2021-03-31 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company Limited | Plasma-damage-resistant interconnect structure and methods for manufacturing the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5689134A (en) * | 1995-01-09 | 1997-11-18 | Lsi Logic Corporation | Integrated circuit structure having reduced cross-talk and method of making same |
JPH11354637A (ja) * | 1998-06-11 | 1999-12-24 | Oki Electric Ind Co Ltd | 配線の接続構造及び配線の接続部の形成方法 |
US6100195A (en) * | 1998-12-28 | 2000-08-08 | Chartered Semiconductor Manu. Ltd. | Passivation of copper interconnect surfaces with a passivating metal layer |
US7224063B2 (en) | 2001-06-01 | 2007-05-29 | International Business Machines Corporation | Dual-damascene metallization interconnection |
JP2003218115A (ja) * | 2002-01-23 | 2003-07-31 | Hitachi Ltd | ヴィアを有する配線構造 |
JP2004273523A (ja) * | 2003-03-05 | 2004-09-30 | Renesas Technology Corp | 配線接続構造 |
US7129196B2 (en) | 2003-07-21 | 2006-10-31 | Los Alamos National Security, Llc | Buffer layer for thin film structures |
US7608335B2 (en) | 2004-11-30 | 2009-10-27 | Los Alamos National Security, Llc | Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate |
JP4349269B2 (ja) * | 2004-12-08 | 2009-10-21 | 富士通株式会社 | 半導体装置及びその製造方法 |
US7727934B2 (en) | 2004-12-23 | 2010-06-01 | Los Alamos National Security, Llc | Architecture for coated conductors |
JP2006186036A (ja) * | 2004-12-27 | 2006-07-13 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US7473636B2 (en) | 2006-01-12 | 2009-01-06 | International Business Machines Corporation | Method to improve time dependent dielectric breakdown |
KR100886257B1 (ko) | 2007-05-29 | 2009-03-02 | 재단법인서울대학교산학협력재단 | 구리 다마신 형성 방법 |
-
2008
- 2008-12-29 US US12/344,838 patent/US8114768B2/en active Active
-
2009
- 2009-09-10 KR KR1020090085265A patent/KR20100080325A/ko active IP Right Grant
- 2009-11-25 JP JP2009267389A patent/JP5558790B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-23 US US13/356,013 patent/US8922022B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120119366A1 (en) | 2012-05-17 |
JP2010157697A (ja) | 2010-07-15 |
US8922022B2 (en) | 2014-12-30 |
US20100164116A1 (en) | 2010-07-01 |
US8114768B2 (en) | 2012-02-14 |
KR20100080325A (ko) | 2010-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5558790B2 (ja) | 金属相互接続構造体及びこれを製造する方法 | |
US8716134B2 (en) | Interconnect structure employing a Mn-group VIIIB alloy liner | |
JP5089575B2 (ja) | 相互接続構造体及びその製造方法 | |
JP4832807B2 (ja) | 半導体装置 | |
US8828862B2 (en) | Air-dielectric for subtractive etch line and via metallization | |
US7952146B2 (en) | Grain growth promotion layer for semiconductor interconnect structures | |
TWI423327B (zh) | 降低後段製程配線結構之整體介電常數的處理整合系統 | |
US7867895B2 (en) | Method of fabricating improved interconnect structure with a via gouging feature absent profile damage to the interconnect dielectric | |
KR101857915B1 (ko) | 상호접속 구조물 및 상호접속 구조물의 형성 방법 | |
WO2013126199A1 (en) | Metallic capped interconnect structure with high electromigration resistance and low resistivity | |
US8129842B2 (en) | Enhanced interconnect structure | |
US20230138988A1 (en) | Dual damascene fully-aligned via interconnects with dual etch layers | |
US7790599B2 (en) | Metal cap for interconnect structures | |
US8084864B2 (en) | Electromigration resistant aluminum-based metal interconnect structure | |
US20190326215A1 (en) | Metal embedded low-resistance beol antifuse | |
US6724087B1 (en) | Laminated conductive lines and methods of forming the same | |
JP4786680B2 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120611 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131105 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140115 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20140115 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140220 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140425 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140515 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140605 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5558790 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |