JP2007153673A - 誘電体磁器組成物、電子部品および積層セラミックコンデンサ - Google Patents
誘電体磁器組成物、電子部品および積層セラミックコンデンサ Download PDFInfo
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Abstract
【解決手段】誘電体粒子と、これら誘電体粒子の間に存在する粒界相とを有する誘電体磁器組成物であって、前記粒界相に含まれるSiおよび/またはA元素(ただし、Aは、6配位時の有効イオン半径が0.065nm〜0.085nmの陽イオン元素群から選択される少なくとも1種)の濃度を測定した場合に、前記Siおよび/またはA元素の濃度が粒界相内の位置によってばらついており、粒界相内の前記Siおよび/またはA元素の濃度のばらつきが、CV値で、10%よりも大きく、58%未満である。
【選択図】なし
Description
誘電体粒子と、これら誘電体粒子の間に存在する粒界相とを有する誘電体磁器組成物であって、
前記粒界相に含まれるSiおよび/またはA元素(ただし、Aは、6配位時の有効イオン半径が0.065nm〜0.085nmの陽イオン元素群から選択される少なくとも1種)の濃度を測定した場合に、Siおよび/またはA元素の濃度が粒界相内の位置によってばらついており、
粒界相内のSiおよび/またはA元素の濃度のばらつきが、CV値で、10%よりも大きく、58%未満であり、より好ましくは、20〜50%である。
図1は、本発明の一実施形態に係る積層セラミックコンデンサの断面概略図である。
図2は、図1に示す誘電体層を構成する誘電体粒子の断面図である。
図3は、実施例において、CV値の算出方法を説明する模式図である。
誘電体層
MgO,CaO,BaOおよびSrOから選ばれる少なくとも1種を含む第1副成分と、
Siおよび/またはA元素(ただし、Aは、6配位時の有効イオン半径が0.065nm〜0.085nmの陽イオン元素群から選択される少なくとも1種)の酸化物から選ばれる少なくとも1種を含む第2副成分と、
V2 O5 ,MoO3 およびWO3 から選ばれる少なくとも1種を含む第3副成分と、
R1の酸化物(ただし、R1はSc,Er,Tm,YbおよびLuから選択される少なくとも1種)を含む第4副成分と、
R2の酸化物(ただし、R2はY、Dy、Ho、Tb、GdおよびEuから選択される少なくとも1種)を含む第5副成分と、
CaZrO3 またはCaO+ZrO2 を必要に応じて含む第6副成分と、
MnOを必要に応じて含む第7副成分とを有する。
主成分であるBaTiO3 に対する上記各副成分の比率は、BaTiO3 100モルに対し、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル、
第5副成分:0<第5副成分≦9モル、
第6副成分:5モル以下、
第7副成分:0.5モル以下であり、
好ましくは、
第1副成分:0.1〜2.5モル、
第2副成分:3〜8モル、
第3副成分:0.1〜0.4モル、
第4副成分:0.5〜5.0モル、
第5副成分:0.5〜9モル、
第6副成分:0.5〜3モル、
第7副成分:0.01〜0.5モルである。
誘電体粒子の構造
内部電極層
端子電極
積層セラミックコンデンサの製造方法
実施例1
昇温速度:200°C/時間
保持温度:700°C
保持時間:2時間
雰囲気:空気中
で行い、
条件2では、
昇温速度:200°C/時間
保持温度:800°C
保持時間:2時間
雰囲気:空気中
で行った。
昇温速度:60°C/時間、
保持温度:260°C、
保持時間:8時間、
雰囲気:空気中、
で行った。
昇温速度:200°C/時間、
保持温度:1240°C、
保持時間:6時間、
酸素分圧:10−11気圧、
雰囲気:H2−N2−H2Oガス、
で行った。
昇温速度:200°C/時間、
保持温度:1000°C、
保持時間:2時間、
酸素分圧:10−7気圧、
雰囲気:加湿したN2 ガス、
で行った。
CV値
特性評価
実施例2
実施例3
実施例4
4… コンデンサ素体
4a… 第1端部
4b… 第2端部
6,8… 端子電極
10… 誘電体層
12… 内部電極層
20… 誘電体粒子
22… 粒界相
Claims (5)
- 誘電体粒子と、これら誘電体粒子の間に存在する粒界相とを有する誘電体磁器組成物であって、
前記粒界相に含まれるSiおよび/またはA元素(ただし、Aは、6配位時の有効イオン半径が0.065nm〜0.085nmの陽イオン元素群から選択される少なくとも1種)の濃度を測定した場合に、前記Siおよび/またはA元素の濃度が粒界相内の位置によってばらついており、
粒界相内の前記Siおよび/またはA元素の濃度のばらつきが、CV値で、10%よりも大きく、58%未満であることを特徴とする誘電体磁器組成物。 - 前記A元素が、Al、Cr、GaおよびGeから選ばれる少なくとも1種である請求項1に記載の誘電体磁器組成物。
- 平均粒径D50の値を示す誘電体粒子の周囲に存在する粒界相において前記Siおよび/またはA元素の濃度が測定される請求項1または2に記載の誘電体磁器組成物。
- 請求項1〜3のいずれかに記載の誘電体磁器組成物で構成してある誘電体層を有する電子部品。
- 請求項1〜3のいずれかに記載の誘電体磁器組成物で構成してある誘電体層と、内部電極層とが、交互に積層されたコンデンサ素体を有する積層セラミックコンデンサ。
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US11/606,936 US20070142209A1 (en) | 2005-12-05 | 2006-12-01 | Dielectric ceramic composition, electronic device, and multilayer ceramic capacitor |
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JP2018135258A (ja) * | 2017-02-23 | 2018-08-30 | Tdk株式会社 | 誘電体組成物、誘電体素子、電子部品および積層電子部品 |
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JP2018135258A (ja) * | 2017-02-23 | 2018-08-30 | Tdk株式会社 | 誘電体組成物、誘電体素子、電子部品および積層電子部品 |
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CN108467266B (zh) * | 2017-02-23 | 2021-05-18 | Tdk株式会社 | 电介质组合物、电介质元件、电子部件和层叠电子部件 |
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