JP2006519497A - 局所的なウェーハの温度調節によるウェーハ全体における微細寸法のばらつき補正 - Google Patents

局所的なウェーハの温度調節によるウェーハ全体における微細寸法のばらつき補正 Download PDF

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Publication number
JP2006519497A
JP2006519497A JP2006503525A JP2006503525A JP2006519497A JP 2006519497 A JP2006519497 A JP 2006519497A JP 2006503525 A JP2006503525 A JP 2006503525A JP 2006503525 A JP2006503525 A JP 2006503525A JP 2006519497 A JP2006519497 A JP 2006519497A
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Prior art keywords
wafer
etching
set positions
temperature
chuck
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Pending
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JP2006503525A
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Japanese (ja)
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JP2006519497A5 (enExample
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ジェイ ステーガー ロバート
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Lam Research Corp
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Lam Research Corp
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Publication of JP2006519497A5 publication Critical patent/JP2006519497A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangement of monitoring devices; Arrangement of safety devices
    • F27D21/0014—Devices for monitoring temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Control Of Temperature (AREA)
  • Constitution Of High-Frequency Heating (AREA)
JP2006503525A 2003-02-27 2004-02-12 局所的なウェーハの温度調節によるウェーハ全体における微細寸法のばらつき補正 Pending JP2006519497A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/376,498 US6770852B1 (en) 2003-02-27 2003-02-27 Critical dimension variation compensation across a wafer by means of local wafer temperature control
PCT/US2004/004134 WO2004077505A2 (en) 2003-02-27 2004-02-12 Critical dimension variation compensation across a wafer by means of local wafer temperature control

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013018861A Division JP5844757B2 (ja) 2003-02-27 2013-02-01 エッチング・システム及びエッチング方法

Publications (2)

Publication Number Publication Date
JP2006519497A true JP2006519497A (ja) 2006-08-24
JP2006519497A5 JP2006519497A5 (enExample) 2011-07-07

Family

ID=32771493

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2006503525A Pending JP2006519497A (ja) 2003-02-27 2004-02-12 局所的なウェーハの温度調節によるウェーハ全体における微細寸法のばらつき補正
JP2013018861A Expired - Fee Related JP5844757B2 (ja) 2003-02-27 2013-02-01 エッチング・システム及びエッチング方法
JP2015081870A Pending JP2015130539A (ja) 2003-02-27 2015-04-13 エッチング・システム及びエッチング方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013018861A Expired - Fee Related JP5844757B2 (ja) 2003-02-27 2013-02-01 エッチング・システム及びエッチング方法
JP2015081870A Pending JP2015130539A (ja) 2003-02-27 2015-04-13 エッチング・システム及びエッチング方法

Country Status (10)

Country Link
US (1) US6770852B1 (enExample)
EP (1) EP1599891B1 (enExample)
JP (3) JP2006519497A (enExample)
KR (1) KR101047823B1 (enExample)
CN (1) CN1777974B (enExample)
AT (1) ATE480003T1 (enExample)
DE (1) DE602004028910D1 (enExample)
IL (1) IL170511A (enExample)
TW (1) TWI338917B (enExample)
WO (1) WO2004077505A2 (enExample)

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KR20120102077A (ko) * 2009-12-15 2012-09-17 램 리써치 코포레이션 Ｃｄ 균일성을 향상시키기 위한 기판 온도의 조절
KR20140099838A (ko) * 2013-02-04 2014-08-13 램 리써치 코포레이션 웨이퍼 기반으로 웨이퍼 상의 온도와 트림 시간을 통해 ｃｄ 및 ｃｄ 균일성을 제어하는 방법
JP2019041021A (ja) * 2017-08-25 2019-03-14 東京エレクトロン株式会社 被処理体を処理する方法
WO2025187424A1 (ja) * 2024-03-04 2025-09-12 東京エレクトロン株式会社 基板処理装置

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ATE480003T1 (de) 2010-09-15
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TWI338917B (en) 2011-03-11
WO2004077505A3 (en) 2005-03-31
WO2004077505A2 (en) 2004-09-10
IL170511A (en) 2010-04-15
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JP2013077859A (ja) 2013-04-25
KR101047823B1 (ko) 2011-07-08
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TW200428505A (en) 2004-12-16
US6770852B1 (en) 2004-08-03

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