JP2006519490A5 - - Google Patents
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- Publication number
- JP2006519490A5 JP2006519490A5 JP2006502501A JP2006502501A JP2006519490A5 JP 2006519490 A5 JP2006519490 A5 JP 2006519490A5 JP 2006502501 A JP2006502501 A JP 2006502501A JP 2006502501 A JP2006502501 A JP 2006502501A JP 2006519490 A5 JP2006519490 A5 JP 2006519490A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- salts
- per
- hydrogen peroxide
- polishing additive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007800 oxidant agent Substances 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 3
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 2
- -1 hydroxy acid salts Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 238000005502 peroxidation Methods 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000007970 thio esters Chemical class 0.000 description 1
- 150000003566 thiocarboxylic acids Chemical class 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- 229940103494 thiosalicylic acid Drugs 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/376,172 | 2003-02-27 | ||
| US10/376,172 US7097541B2 (en) | 2002-01-22 | 2003-02-27 | CMP method for noble metals |
| PCT/IB2004/000993 WO2004076574A2 (en) | 2003-02-27 | 2004-02-19 | Cmp composition comprising a sulfonic acid and a method for polishing noble metals |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006519490A JP2006519490A (ja) | 2006-08-24 |
| JP2006519490A5 true JP2006519490A5 (https=) | 2007-04-05 |
| JP4709136B2 JP4709136B2 (ja) | 2011-06-22 |
Family
ID=32926283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006502501A Expired - Lifetime JP4709136B2 (ja) | 2003-02-27 | 2004-02-19 | 貴金属のｃｍｐ方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7097541B2 (https=) |
| EP (1) | EP1599555B1 (https=) |
| JP (1) | JP4709136B2 (https=) |
| KR (1) | KR101082268B1 (https=) |
| CN (1) | CN1753961B (https=) |
| TW (1) | TWI241937B (https=) |
| WO (1) | WO2004076574A2 (https=) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
| US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
| US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
| US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
| US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| KR100648264B1 (ko) * | 2004-08-17 | 2006-11-23 | 삼성전자주식회사 | 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법 |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| ATE529489T1 (de) * | 2004-12-22 | 2011-11-15 | Showa Denko Kk | Polierzusammensetzung und polierverfahren |
| US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| JP2007088209A (ja) * | 2005-09-22 | 2007-04-05 | Fujifilm Corp | 貴金属用研磨液、及び、化学的機械的研磨方法 |
| JP2007088258A (ja) * | 2005-09-22 | 2007-04-05 | Fujifilm Corp | 金属研磨液及びそれを用いる研磨方法 |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| US7955519B2 (en) * | 2005-09-30 | 2011-06-07 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| TWI408739B (zh) * | 2005-12-21 | 2013-09-11 | Anji Microelectronics Co Ltd | 化學機械拋光系統、方法以及研磨劑 |
| US7732393B2 (en) * | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
| US7368066B2 (en) * | 2006-05-31 | 2008-05-06 | Cabot Microelectronics Corporation | Gold CMP composition and method |
| CN101496143B (zh) * | 2006-07-28 | 2011-04-06 | 昭和电工株式会社 | 研磨组合物 |
| US7776230B2 (en) * | 2006-08-30 | 2010-08-17 | Cabot Microelectronics Corporation | CMP system utilizing halogen adduct |
| JP2008091411A (ja) * | 2006-09-29 | 2008-04-17 | Fujifilm Corp | 金属用研磨液 |
| US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
| WO2008142093A1 (en) | 2007-05-24 | 2008-11-27 | Basf Se | Chemical-mechanical polishing composition comprising metal-organic framework materials |
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
| US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| CN102105267B (zh) * | 2008-06-18 | 2016-08-03 | 福吉米株式会社 | 抛光组合物及利用该抛光组合物的抛光方法 |
| US20100096584A1 (en) * | 2008-10-22 | 2010-04-22 | Fujimi Corporation | Polishing Composition and Polishing Method Using the Same |
| KR101268615B1 (ko) | 2008-12-11 | 2013-06-04 | 히타치가세이가부시끼가이샤 | Ｃｍｐ용 연마액 및 이것을 이용한 연마 방법 |
| JP5455452B2 (ja) * | 2009-06-05 | 2014-03-26 | Ｊｓｒ株式会社 | 表面処理用組成物、表面処理方法および半導体装置の製造方法 |
| TWI454562B (zh) | 2009-07-16 | 2014-10-01 | 日立化成股份有限公司 | 鈀研磨用ｃｍｐ研磨液以及研磨方法 |
| US9799532B2 (en) * | 2010-02-15 | 2017-10-24 | Hitachi Chemical Company, Ltd. | CMP polishing solution and polishing method |
| JP5649940B2 (ja) * | 2010-12-07 | 2015-01-07 | Jsr株式会社 | 半導体装置の製造方法 |
| CN103562337A (zh) * | 2011-03-30 | 2014-02-05 | 福吉米株式会社 | 研磨用组合物和研磨方法 |
| JP2012234948A (ja) * | 2011-04-28 | 2012-11-29 | Fujimi Inc | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| EP3428933B1 (en) * | 2011-09-30 | 2022-03-02 | View, Inc. | Improved optical device fabrication |
| WO2013137192A1 (ja) * | 2012-03-16 | 2013-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US8999193B2 (en) * | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
| JPWO2014175393A1 (ja) | 2013-04-25 | 2017-02-23 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| JPWO2014175397A1 (ja) | 2013-04-25 | 2017-02-23 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| US9012327B2 (en) * | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
| US9434859B2 (en) * | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
| CN104131286B (zh) * | 2014-07-01 | 2015-10-28 | 安徽宏发节能设备有限公司 | 一种质量稳定抛光效率高的金属抛光液及其制备方法 |
| JP6459275B2 (ja) * | 2014-07-28 | 2019-01-30 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| WO2019069370A1 (ja) | 2017-10-03 | 2019-04-11 | 日立化成株式会社 | 研磨液、研磨液セット、研磨方法及び欠陥抑制方法 |
| EP3774647A4 (en) | 2018-03-28 | 2022-04-06 | FUJIFILM Electronic Materials U.S.A, Inc. | CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS |
| JP7209004B2 (ja) | 2018-03-28 | 2023-01-19 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | ルテニウムバリアの化学機械研磨スラリー |
| JP7088797B2 (ja) * | 2018-09-25 | 2022-06-21 | 株式会社フジミインコーポレーテッド | タングステン溶解抑制剤、ならびにこれを用いた研磨用組成物および表面処理組成物 |
| TWI787564B (zh) * | 2018-12-10 | 2022-12-21 | 美商Ｃｍｃ材料股份有限公司 | 無氧化劑化學機械拋光(cmp)漿料及釕化學機械拋光 |
| CN113004798B (zh) * | 2019-12-19 | 2024-04-12 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN114716915A (zh) * | 2021-01-04 | 2022-07-08 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| TWI859998B (zh) * | 2022-09-01 | 2024-10-21 | 日商Ｊｓｒ股份有限公司 | 化學機械研磨用組成物及研磨方法 |
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| JPS6396599A (ja) | 1986-10-14 | 1988-04-27 | 三菱重工業株式会社 | 金属ルテニウムの溶解法 |
| JPH01270512A (ja) | 1988-04-21 | 1989-10-27 | Tanaka Kikinzoku Kogyo Kk | 貴金属の溶解方法 |
| US5044128A (en) | 1990-06-27 | 1991-09-03 | Priority Co., Ltd. | Magnetically-polishing machine and process |
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| DE19927286B4 (de) | 1999-06-15 | 2011-07-28 | Qimonda AG, 81739 | Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche |
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| CN1333444C (zh) * | 2002-11-12 | 2007-08-22 | 阿科玛股份有限公司 | 使用磺化两性试剂的铜化学机械抛光溶液 |
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| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
-
2003
- 2003-02-27 US US10/376,172 patent/US7097541B2/en not_active Expired - Lifetime
-
2004
- 2004-02-19 CN CN2004800052227A patent/CN1753961B/zh not_active Expired - Lifetime
- 2004-02-19 TW TW093104092A patent/TWI241937B/zh not_active IP Right Cessation
- 2004-02-19 JP JP2006502501A patent/JP4709136B2/ja not_active Expired - Lifetime
- 2004-02-19 WO PCT/IB2004/000993 patent/WO2004076574A2/en not_active Ceased
- 2004-02-19 EP EP04712639.6A patent/EP1599555B1/en not_active Expired - Lifetime
-
2005
- 2005-08-26 KR KR1020057015903A patent/KR101082268B1/ko not_active Expired - Lifetime
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