JP6459275B2 - Cmp用研磨液及びこれを用いた研磨方法 - Google Patents
Cmp用研磨液及びこれを用いた研磨方法 Download PDFInfo
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- JP6459275B2 JP6459275B2 JP2014153037A JP2014153037A JP6459275B2 JP 6459275 B2 JP6459275 B2 JP 6459275B2 JP 2014153037 A JP2014153037 A JP 2014153037A JP 2014153037 A JP2014153037 A JP 2014153037A JP 6459275 B2 JP6459275 B2 JP 6459275B2
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- Prior art keywords
- polishing
- metal
- cmp
- ruthenium
- mass
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- 239000007800 oxidant agent Substances 0.000 claims description 69
- 229910052707 ruthenium Inorganic materials 0.000 claims description 65
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 52
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- 230000001590 oxidative effect Effects 0.000 claims description 45
- -1 hydrogen ions Chemical class 0.000 claims description 44
- 239000002002 slurry Substances 0.000 claims description 38
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- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
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- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
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- 235000019260 propionic acid Nutrition 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
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- LJXQPZWIHJMPQQ-UHFFFAOYSA-N pyrimidin-2-amine Chemical compound NC1=NC=CC=N1 LJXQPZWIHJMPQQ-UHFFFAOYSA-N 0.000 description 1
- MQEFDQWUCTUJCP-UHFFFAOYSA-N pyrimidine-2,4,5,6-tetramine;sulfuric acid Chemical compound OS(O)(=O)=O.NC1=NC(N)=C(N)C(N)=N1 MQEFDQWUCTUJCP-UHFFFAOYSA-N 0.000 description 1
- YAAWASYJIRZXSZ-UHFFFAOYSA-N pyrimidine-2,4-diamine Chemical compound NC1=CC=NC(N)=N1 YAAWASYJIRZXSZ-UHFFFAOYSA-N 0.000 description 1
- JBDKAABFESSFMV-UHFFFAOYSA-N pyrrolo[1,2-a]pyrimidine Chemical compound N1=CC=CN2C=CC=C21 JBDKAABFESSFMV-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
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- 239000010948 rhodium Substances 0.000 description 1
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- 238000007788 roughening Methods 0.000 description 1
- ORIHZIZPTZTNCU-YVMONPNESA-N salicylaldoxime Chemical compound O\N=C/C1=CC=CC=C1O ORIHZIZPTZTNCU-YVMONPNESA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- 239000007858 starting material Substances 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
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- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
本実施形態に係るCMP用研磨液は、ルテニウム系金属を研磨するためのCMP用研磨液である。本実施形態に係るCMP用研磨液は、過酸化水素と、金属酸化剤(但し、過酸化水素を除く)と、酸化金属溶解剤と、砥粒と、水と、を少なくとも含有する。本実施形態に係るCMP用研磨液の前記金属酸化剤(但し、過酸化水素を除く)は、水素イオンの授受を伴う酸化還元電位を有し、その酸化還元電位は、標準水素電極に対して0.68〜3.10Vである。本実施形態に係るCMP用研磨液のpHは2.5以上7.0未満である。本実施形態に係るCMP用研磨液において、砥粒の含有量は、砥粒の含有量及び水の含有量の合計100質量部に対して0.10質量部以上である。
本実施形態に係るCMP用研磨液のpHは、ルテニウム系金属の研磨速度が高速化する観点から、2.5以上7.0未満である。本実施形態に係るCMP用研磨液のpHは、ルテニウム系金属の研磨速度が更に高速化する観点から、2.5〜6.0であることが好ましい。また、本実施形態に係るCMP用研磨液のpHは、砥粒の分散性も考慮すると、2.5〜4.5であることがより好ましく、2.5〜4.0であることが更に好ましい。付加的効果として、バリア金属の研磨速度と比較して導電性物質(例えば銅及び銅合金等の金属)のエッチング速度を抑制するためには、pH2.5以上7.0未満の範囲では、pH2.5未満の領域よりも優れた特性が得られる。また、pHが7.0以上の領域では、エッチング作用の抑制には非常に有効であるが、実用的なルテニウム系金属の研磨速度が得られない。pHが7.0より大きいと、金属酸化剤の分解が促進され、一次酸化層よりも研磨されにくい二次酸化層がルテニウム系金属の表面に形成されるために研磨速度が低下し易い。pHは液温25℃におけるpHと定義する。
本実施形態に係るCMP用研磨液は、酸化金属溶解剤を含有する。酸化金属溶解剤としては、有機酸、有機酸エステル、有機酸のアンモニウム塩、無機酸、無機酸のアンモニウム塩等の化合物(金属防食剤に該当する化合物、及び、金属酸化剤に該当する化合物を除く)が挙げられ、水溶性であれば特に制限はない。酸化金属溶解剤としては、ギ酸、酢酸、プロピオン酸、酪酸、吉草酸、2−メチル酪酸、n−ヘキサン酸、3,3−ジメチル酪酸、2−エチル酪酸、4−メチルペンタン酸、n−ヘプタン酸、2−メチルヘキサン酸、n−オクタン酸、2−エチルヘキサン酸、安息香酸、グリコール酸、サリチル酸、グリセリン酸、シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、ピメリン酸、マレイン酸、フタル酸、リンゴ酸、酒石酸、クエン酸、p−トルエンスルホン酸、乳酸、キナルジン酸等の有機酸;これらの有機酸エステル;前記有機酸のアンモニウム塩;塩酸、クロム酸等の無機酸;塩化アンモニウム、重クロム酸アンモニウム、二クロム酸アンモニウム等の無機酸のアンモニウム塩などが挙げられる。これらの中では、金属のエッチングが抑制され易い観点から、有機酸が好ましく、有機酸としては、例えば、グリコール酸、乳酸、コハク酸、アジピン酸、グルタル酸、リンゴ酸、マロン酸、マレイン酸、酒石酸、安息香酸、サリチル酸、キナルジン酸、酪酸及び吉草酸からなる群より選ばれる少なくとも1種が好ましい。これらの酸化金属溶解剤は、1種類単独で又は2種類以上混合して用いることができる。
本実施形態に係るCMP用研磨液は砥粒を含有する。また、その砥粒表面は、バリア金属の研磨速度の更なる高速化の観点から、正のゼータ電位(正電荷)を有していることが好ましく、+5mV以上のゼータ電位を有していることがより好ましく、+10mV以上のゼータ電位を有していることが更に好ましく、+20mV以上のゼータ電位を有していることが特に好ましい。なお、砥粒のゼータ電位は、一般に市販されている正電荷を有する砥粒を使用することで容易に調整することができる。
本実施形態に係るCMP用研磨液は、金属防食剤を含有していてもよい。金属防食剤としては、金属表面に対して保護膜を形成する作用を有する物質であれば特に制限はないが、効果を発揮するために有効な量の水溶性を有していれば、従来公知の物質を特に制限なく使用することができる。これらは1種類単独で、もしくは2種類以上を混合して用いることができる。具体的には、アントラニル酸、サリチルアルドキシム、イミダゾール骨格を有する化合物(以下「イミダゾール化合物」と表記する)、トリアゾール骨格を有する化合物(以下「トリアゾール化合物」と表記する)、テトラゾール骨格を有する化合物(以下「テトラゾール化合物」と表記する)、ピラゾール骨格を有する化合物(以下「ピラゾール化合物」と表記する)、ピリミジン骨格を有する化合物(以下「ピリミジン化合物」と表記する)等が挙げられ、中でも、イミダゾール化合物、トリアゾール化合物、テトラゾール化合物、ピラゾール化合物及びピリミジン化合物からなる群より選ばれる少なくとも1種が好ましく、トリアゾール化合物がより好ましい。
本実施形態に係るCMP用研磨液は、第一の金属酸化剤と、第二の金属酸化剤とを含有する。第一の金属酸化剤は、過酸化水素であり、第二の金属酸化剤は、過酸化水素と異なる金属酸化剤である。第二の金属酸化剤は、水素イオンの授受を伴う酸化還元電位を有している。前記酸化還元電位は、ルテニウム系金属の研磨速度を向上させる観点から、標準水素電極(NHE)に対して0.68〜3.10Vである。前記酸化還元電位は、ルテニウム系金属の研磨速度を更に向上させる観点から、0.80〜2.30Vが好ましく、0.84〜2.00Vがより好ましい。
本実施形態に係るCMP用研磨液は、水溶性ポリマーを更に含有することができる。水溶性ポリマーの重量平均分子量(Mw)は、好ましくは500以上、より好ましくは1500以上、更に好ましくは5000以上である。水溶性ポリマーの重量平均分子量の上限は特に制限はないが、溶解度に優れる観点から、500万以下が好ましい。水溶性ポリマーの重量平均分子量が500以上であると、ルテニウム系金属の更に高い研磨速度が得られる傾向がある。水溶性ポリマーの重量平均分子量は、以下の条件でゲルパーミエーションクロマトグラフィー(GPC)により標準ポリスチレンの検量線を用いて測定することができる。
試料:10μl
標準ポリスチレン:東ソー株式会社製標準ポリスチレン(分子量:190000、17900、9100、2980、578、474、370、266)
検出器:株式会社日立製作所製、RI−モニター、商品名:L−3000
インテグレーター:株式会社日立製作所製、GPCインテグレーター、商品名:D−2200
ポンプ:株式会社日立製作所製、商品名:L−6000
デガス装置:昭和電工株式会社製、商品名:Shodex DEGAS
カラム:日立化成株式会社製、商品名:GL−R440、GL−R430、GL−R420をこの順番で連結して使用
溶離液:テトラヒドロフラン(THF)
測定温度:23℃
流速:1.75ml/min
測定時間:45min
本実施形態に係るCMP用研磨液は、有機溶媒を更に含有することができる。有機溶媒としては特に制限はないが、水と任意に混合できるものが好ましい。
本実施形態に係るCMP用研磨液は、半導体デバイスにおける配線層の形成に適用できる。本実施形態に係るCMP用研磨液は、例えば導電性物質と、バリア金属と、層間絶縁材料とを有する基体(例えば基板)のCMPに使用することができる。導電性物質、バリア金属及び層間絶縁材料の形状は、例えば、層状又は膜状(例えば導電性物質層、バリア層及び層間絶縁膜)である。同一条件下のCMPにおいて導電性物質/バリア金属/層間絶縁材料の研磨速度比は、0.1〜1/1/0.1〜1が好ましい。
(実施例1)
臭素酸カリウム0.10質量部、30質量%過酸化水素水0.20質量部(過酸化水素として0.06質量部)、グリコール酸0.40質量部、平均粒子径が60nmであり且つ約+20mVのゼータ電位を有する市販のコロイダルシリカ5.00質量部、ベンゾトリアゾール0.20質量部、3−メチル−3−メトキシブタノール0.80質量部、及び、水95.00質量部を秤量、混合、撹拌し、CMP用研磨液1を作製した。
表1に示す各成分を秤量、混合、攪拌し、実施例1と同様に操作してCMP用研磨液2〜12を作製した。
表2に示す各成分を秤量、混合、攪拌し、実施例1と同様に操作してCMP用研磨液13〜21を作製した。
硝酸0.10質量部、30質量%過酸化水素水0.20質量部(過酸化水素として0.06質量部)、グリコール酸0.40質量部、平均粒子径が60nmであり且つ約+20mVのゼータ電位を有する市販のコロイダルシリカ5.00質量部、ベンゾトリアゾール0.20質量部、3−メチル−3−メトキシブタノール0.80質量部、及び、水95.00質量部を秤量、混合、撹拌し、CMP用研磨液22を作製した。
表3に示す各成分を秤量、混合、攪拌し、比較例1と同様に操作してCMP用研磨液23〜28を作製した。
表4に示す各成分を秤量、混合、撹拌し、比較例1と同様に操作してCMP用研磨液29及び30を作製した。
表5に示す各成分を秤量、混合、攪拌し、実施例1と同様に操作してCMP用研磨液31〜39を作製した。
表6に示す各成分を秤量、混合、攪拌し、比較例1と同様に操作してCMP用研磨液40及び41を作製した。
表6及び表7に示す各成分を秤量、混合、攪拌し、実施例1と同様に操作してCMP用研磨液42〜49を作製した。
表7に示す各成分を秤量、混合、攪拌し、比較例1と同様に操作してCMP用研磨液50を作製した。
(pHの評価)
横河電機株式会社製、商品名:PH81を用いてCMP用研磨液1〜50におけるpHを測定した。標準緩衝液(フタル酸塩pH緩衝液pH:4.01(25℃)、中性リン酸塩pH緩衝液pH6.86(25℃)及びホウ酸塩pH緩衝液pH9.12(25℃))を用いて、3点校正した後、電極をCMP用研磨液に入れ、2分以上経過して安定した後の値(25℃)をCMP用研磨液のpHとした。
スペクトリス株式会社製、商品名:Zetasizer 3000 HSを用いてCMP用研磨液1〜50における砥粒のゼータ電位を測定した。その結果、CMP用研磨液23、24、26及び28におけるゼータ電位が+10mV未満を示したのに対して、CMP用研磨液1〜22、25、27及び29〜50におけるゼータ電位は+20mV以上を示した。
前記CMP用研磨液を0.2g量り取り、99.8gの水で希釈(500倍希釈)して測定サンプルを調製した。次に、この測定サンプルを動的光散乱方式粒度分布計(BECKMAN COULTER社製、商品名:COULTER N5型)に投入して測定を行い、D50として得られる値を平均粒子径として得た。その結果、CMP用研磨液23、24、26及び28における平均粒子径が100nmを超えていたのに対して、CMP用研磨液1〜22、25、27及び29〜50における平均粒子径は10〜100nmであった。
(ブランケット基板の作製)
以下の基板を20mm×20mmの小片に劈開し、下記の研磨に使用した。
ルテニウムブランケット基板:CVD法でルテニウム膜(厚さ:約90Å)を形成したシリコン基板。
前記CMP用研磨液を用いて前記ブランケット基板を下記研磨条件で60秒間化学機械研磨した。
研磨装置:株式会社ナノファクター製、商品名:FACT−200
研磨パッド:ローム・アンド・ハース・エレクトロニック・マテリアルズCMP社製、商品名:VP−3200
定盤回転数:80min−1
研磨圧力:10kPa
研磨液の供給量:8ml/min
上記条件で研磨したルテニウムブランケット基板の研磨速度を、研磨前後のルテニウム膜の膜厚の差から求めた。ルテニウム膜の膜厚は、4探針式抵抗測定器を使用して求めたシート抵抗の値から換算して求めた。結果を表1〜7に示す。
Claims (11)
- ルテニウム系金属を研磨するためのCMP用研磨液であって、
過酸化水素と、金属酸化剤(但し、過酸化水素を除く)と、酸化金属溶解剤と、砥粒と、水と、を含有し、
前記金属酸化剤が、硝酸アンモニウム、臭素酸カリウム、ペルオキソ二硫酸アンモニウム、ペルオキソ二硫酸カリウム、次亜塩素酸ナトリウム、過マンガン酸カリウム及び過ヨウ素酸カリウムからなる群より選ばれる少なくとも1種を含み、
前記金属酸化剤が、水素イオンの授受を伴う酸化還元電位を有し、
前記酸化還元電位が標準水素電極に対して0.68〜3.10Vであり、
前記CMP用研磨液のpHが2.5以上7.0未満であり、
前記砥粒の含有量が、前記砥粒の含有量及び前記水の含有量の合計100質量部に対して0.10質量部以上であり、
前記砥粒の平均粒子径が10〜100nmである、CMP用研磨液。 - 前記ルテニウム系金属が、ルテニウム、ルテニウム合金及びルテニウム化合物からなる群より選ばれる少なくとも1種を含む、請求項1に記載のCMP用研磨液。
- 前記過酸化水素の含有量及び前記金属酸化剤の含有量の合計が、前記砥粒の含有量及び前記水の含有量の合計100質量部に対して0.01〜25.00質量部である、請求項1又は2に記載のCMP用研磨液。
- 前記酸化金属溶解剤が、有機酸を含む、請求項1〜3のいずれか一項に記載のCMP用研磨液。
- 金属防食剤を更に含有する、請求項1〜4のいずれか一項に記載のCMP用研磨液。
- 前記金属防食剤が、イミダゾール骨格を有する化合物、トリアゾール骨格を有する化合物、テトラゾール骨格を有する化合物、ピラゾール骨格を有する化合物、及び、ピリミジン骨格を有する化合物からなる群より選ばれる少なくとも1種を含む、請求項5に記載のCMP用研磨液。
- 有機溶媒を更に含有する、請求項1〜6のいずれか一項に記載のCMP用研磨液。
- 表面に隆起部及び溝部を有する層間絶縁膜と、当該層間絶縁膜の前記表面に追従して設けられたバリア層と、当該バリア層を被覆するように設けられた導電性物質層と、を有する基板における前記導電性物質層を研磨して前記層間絶縁膜の前記隆起部上に位置する前記バリア層を露出させる第1の研磨工程と、
前記第1の研磨工程により露出した前記バリア層を請求項1〜7のいずれか一項に記載のCMP用研磨液を用いて研磨して前記層間絶縁膜の前記隆起部を露出させる第2の研磨工程と、を備える、研磨方法。 - 前記層間絶縁膜が、シリコン系化合物及び有機ポリマーからなる群より選ばれる少なくとも1種を含む、請求項8に記載の研磨方法。
- 前記導電性物質層が、銅、銅合金、銅の酸化物及び銅合金の酸化物からなる群より選ばれる少なくとも1種を含む、請求項8又は9に記載の研磨方法。
- 前記バリア層が、ルテニウム、ルテニウム合金及びルテニウム化合物からなる群より選ばれる少なくとも1種を含む、請求項8〜10のいずれか一項に記載の研磨方法。
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