WO2014175393A1 - Cmp用研磨液及びこれを用いた研磨方法 - Google Patents
Cmp用研磨液及びこれを用いた研磨方法 Download PDFInfo
- Publication number
- WO2014175393A1 WO2014175393A1 PCT/JP2014/061599 JP2014061599W WO2014175393A1 WO 2014175393 A1 WO2014175393 A1 WO 2014175393A1 JP 2014061599 W JP2014061599 W JP 2014061599W WO 2014175393 A1 WO2014175393 A1 WO 2014175393A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- cmp
- acid
- metal
- ruthenium
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 342
- 238000000034 method Methods 0.000 title claims description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 263
- 239000002184 metal Substances 0.000 claims abstract description 263
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 120
- 239000002245 particle Substances 0.000 claims abstract description 48
- -1 ruthenium metals Chemical class 0.000 claims abstract description 44
- 239000002253 acid Substances 0.000 claims abstract description 35
- 150000003839 salts Chemical class 0.000 claims abstract description 32
- 150000004714 phosphonium salts Chemical group 0.000 claims abstract description 30
- 239000007800 oxidant agent Substances 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 9
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 9
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- 239000007788 liquid Substances 0.000 claims description 134
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 126
- 239000000758 substrate Substances 0.000 claims description 77
- 150000001875 compounds Chemical class 0.000 claims description 52
- 239000010949 copper Substances 0.000 claims description 46
- 239000002002 slurry Substances 0.000 claims description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 31
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 24
- 125000000217 alkyl group Chemical group 0.000 claims description 21
- 150000003852 triazoles Chemical class 0.000 claims description 17
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 12
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
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- 125000001424 substituent group Chemical group 0.000 claims description 12
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 11
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 10
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 10
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 10
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- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
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- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 229960004889 salicylic acid Drugs 0.000 claims description 6
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 5
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- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 5
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
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- 239000012964 benzotriazole Substances 0.000 description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
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- 239000003960 organic solvent Substances 0.000 description 9
- 150000003863 ammonium salts Chemical class 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 7
- 125000004437 phosphorous atom Chemical group 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
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- 239000000126 substance Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000003945 anionic surfactant Substances 0.000 description 4
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 4
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- 238000005227 gel permeation chromatography Methods 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
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- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
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- POFDSYGXHVPQNX-UHFFFAOYSA-N triazolo[1,5-a]pyrimidine Chemical compound C1=CC=NC2=CN=NN21 POFDSYGXHVPQNX-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- GNEAAXYJEIDVFX-UHFFFAOYSA-N triphenyl(prop-2-ynyl)phosphanium Chemical class C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC#C)C1=CC=CC=C1 GNEAAXYJEIDVFX-UHFFFAOYSA-N 0.000 description 1
- PXIMQGSMXJFQOF-UHFFFAOYSA-N triphenyl(propan-2-yl)phosphanium Chemical class C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C(C)C)C1=CC=CC=C1 PXIMQGSMXJFQOF-UHFFFAOYSA-N 0.000 description 1
- HXWNEEZPMZTSBJ-UHFFFAOYSA-N triphenyl(tetradecyl)phosphanium Chemical class C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCCCCCCCCCCCC)C1=CC=CC=C1 HXWNEEZPMZTSBJ-UHFFFAOYSA-N 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a CMP polishing liquid for polishing a ruthenium-based metal, and a polishing method using the same.
- CMP Chemical Mechanical Polishing
- a damascene method for forming damascene wiring has been mainly employed in order to increase the integration density and performance of LSIs.
- An example of the damascene method will be described with reference to FIG.
- a groove (recess) 2 is formed on the surface of the insulating material 1 (FIGS. 1A and 1B).
- the wiring metal 3 is deposited to fill the groove 2 (FIG. 1C).
- unevenness is formed on the surface of the wiring metal 3 due to the influence of the unevenness of the insulating material 1.
- the wiring metal 3 other than the portion buried in the groove 2 is removed by CMP (FIG. 1D).
- a copper-based metal (copper, copper alloy, etc.) is often used. Copper-based metals can diffuse into the insulating material. In order to prevent this, a layered barrier metal is provided between the copper-based metal and the insulating material.
- a tantalum metal, a titanium metal, or the like is used.
- these barrier metals have low adhesion to copper-based metals. Therefore, instead of directly forming the wiring part on the barrier metal, in order to maintain the adhesion between the copper-based metal and the barrier metal, a copper-based metal thin film (copper seed layer) called a seed layer is provided after the copper-based metal is provided. It is common to deposit metal. That is, as shown in FIG.
- the insulating material 1 having a recess on the surface
- the barrier metal 4 provided on the insulating material 1 so as to follow the surface shape of the insulating material 1
- the shape of the barrier metal 4 A substrate (base body) having a seed layer 5 provided on the barrier metal 4 so as to follow, and a wiring metal 3 provided on the seed layer 5 so as to fill the recess and cover the entire surface. Used.
- the formation of the barrier metal 4 and the seed layer 5 may be performed by physical vapor deposition (hereinafter referred to as “PVD method”).
- PVD method physical vapor deposition
- FIG. 3A a metal (barrier metal or seed) formed on the inner wall surface of the groove portion by the PVD method in the vicinity of the opening portion of the groove portion (recess portion) formed in the insulating material 1.
- Layer 6 tends to be partially thick.
- the generation of voids 7 becomes conspicuous when the metals provided on the inner wall surface of the groove contact each other.
- a method using a ruthenium-based metal having excellent adhesion to a copper-based metal has been studied. That is, a method using a ruthenium metal as a seed layer replacing a copper metal, or a method of providing a ruthenium metal between a seed layer using a copper metal and a barrier metal has been proposed.
- the ruthenium-based metal can be formed by a chemical vapor deposition method (Chemical Vapor Deposition, hereinafter referred to as “CVD method”) or an atomic layer deposition method (Atomic Layer Deposition, hereinafter referred to as “ALD method”).
- CVD method or the ALD method can easily suppress the generation of vacancies and can cope with the formation of fine wiring.
- a part of the ruthenium-based metal needs to be removed by CMP in the process of forming the damascene wiring.
- several methods for polishing noble metals have been proposed. For example, using a polishing liquid containing abrasive particles and at least one additive selected from the group consisting of diketones, heterocyclic compounds, urea compounds and amphoteric compounds, platinum, iridium, ruthenium, rhenium, rhodium, A method of polishing a noble metal such as palladium, silver, osmium, or gold has been proposed (see, for example, Patent Document 1 below). In addition, a method for polishing a noble metal using a chemical mechanical polishing system including an abrasive, a liquid carrier, and a sulfonic acid compound or a salt thereof has been proposed (for example, see Patent Document 2 below).
- the conventional CMP polishing liquid for copper-based metals and the polishing polishing liquid for barrier metals do not specialize in removing ruthenium-based metals because the CMP polishing liquid is not specialized for removing ruthenium-based metals. A high polishing rate is not obtained. Therefore, it is desired that the polishing rate for ruthenium-based metal be improved with respect to the CMP polishing liquid as compared with the conventional polishing liquid.
- the present inventor has found the following knowledge.
- the wiring metal is exposed to the CMP polishing liquid in the step of polishing and removing the ruthenium-based metal.
- the CMP polishing liquid contains an oxidizing agent and / or the CMP polishing liquid has a low pH
- the wiring metal is excessively etched, and the wiring portion is dished (the cross section is like a dish).
- dishing occurs in this way, the wiring resistance tends to increase or electromigration tends to occur. As a result, there is a problem that the reliability of the device is lowered. Therefore, it is preferable to suppress the occurrence of dishing as much as possible.
- the present invention uses a polishing slurry for CMP that can improve the polishing rate of ruthenium-based metal and suppress dishing of wiring metal as compared with the case where a conventional polishing slurry for CMP is used, and the same.
- a polishing method is provided.
- the present inventor considered the reason why dishing occurs in the wiring metal as follows. That is, in the presence of a conventional CMP polishing liquid, the etching rate and polishing rate of the wiring metal (for example, copper-based metal) tend to be high, so that the wiring metal is easily etched by the influence of the oxidizing agent or pH, which is the dishing. I thought it was the cause.
- abrasive particles having a negative zeta potential in a CMP polishing liquid, a specific acid component, an oxidizing agent, a triazole-based compound, and a quaternary phosphonium It was found that ruthenium-based metal can be polished at high speed and dishing of the wiring metal can be suppressed by using CMP polishing that contains a salt and has a specific pH.
- the CMP polishing liquid according to the present invention is a CMP polishing liquid for polishing a ruthenium-based metal, and includes abrasive particles, an acid component, an oxidizing agent, a triazole-based compound, a quaternary phosphonium salt, Water, and the acid component includes at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and no hydroxyl groups, and salts thereof,
- the abrasive particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is 3.0 or more and less than 7.0.
- the ruthenium-based metal polishing rate can be improved as compared with the case of using a conventional polishing slurry for CMP. Moreover, according to the polishing slurry for CMP according to the present invention, compared to the case of using the conventional polishing slurry for CMP, the etching rate and polishing rate of the wiring metal are suppressed, so that dishing of the wiring metal can be suppressed. .
- the triazole-based compound preferably includes a compound represented by the following general formula (I).
- R 1 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.
- the triazole-based compound preferably contains 1,2,4-triazole. As a result, it becomes easy to improve the polishing rate of the ruthenium-based metal and to suppress dishing of the wiring metal.
- the acid component includes at least one selected from the group consisting of nitric acid, phosphoric acid, glycolic acid, lactic acid, glycine, alanine, salicylic acid, acetic acid, propionic acid, fumaric acid, itaconic acid, maleic acid and salts thereof. preferable. Thereby, it becomes easy to maintain a practical polishing rate.
- the quaternary phosphonium salt preferably contains at least one selected from the group consisting of triarylphosphonium salts and tetraarylphosphonium salts. Thereby, dishing of the wiring metal can be further suppressed.
- the quaternary phosphonium salt preferably contains a compound represented by the following general formula (II). Thereby, dishing of the wiring metal can be further suppressed.
- each benzene ring may have a substituent
- R 2 represents an alkyl group or an aryl group which may have a substituent
- X ⁇ represents an anion.
- the CMP polishing liquid according to the present invention may be a CMP polishing liquid for polishing a ruthenium-based metal and a wiring metal, and a dishing amount of a wiring portion having a width of 1 ⁇ m including the wiring metal is 30 nm or less.
- a CMP polishing liquid for polishing may also be used.
- the CMP polishing liquid according to the present invention can be stored, transported and used by dividing the components of the CMP polishing liquid into a plurality of liquids.
- the CMP polishing liquid according to the present invention includes a first liquid containing the abrasive particles, the acid component, the triazole compound, and the quaternary phosphonium salt, and a second liquid containing the oxidizing agent.
- the liquid may be stored separately. Thereby, decomposition
- the polishing method according to the present invention includes a polishing step of polishing at least a part of the ruthenium-based metal by polishing a substrate having the ruthenium-based metal using the CMP polishing liquid. According to such a polishing method, the ruthenium-based metal polishing rate can be improved and the wiring metal dishing can be suppressed as compared with the case where a conventional CMP polishing liquid is used.
- the polishing method according to the present invention may be an aspect in which the substrate further includes a wiring metal, and at least a part of the ruthenium-based metal and at least a part of the wiring metal are removed in the polishing step.
- the wiring metal preferably contains a copper-based metal. According to these polishing methods, the characteristics of the CMP polishing liquid can be fully utilized, the ruthenium-based metal polishing rate can be improved, and the wiring metal dishing can be suppressed.
- the polishing method according to the present invention may further include a step of forming a ruthenium-based metal on the substrate by a formation method other than the PVD method and preparing a substrate having the ruthenium-based metal.
- the forming method may be at least one selected from the group consisting of a CVD method and an ALD method.
- the present invention it is possible to improve at least the ruthenium-based metal polishing rate and to suppress the wiring metal dishing as compared with the case where a conventional CMP polishing liquid is used.
- the application (use) of the polishing slurry for CMP can be provided for polishing a substrate having a ruthenium-based metal.
- application (use) of the polishing slurry for CMP can be provided for polishing a substrate having a ruthenium-based metal and a wiring metal.
- FIG. 1 is a schematic cross-sectional view showing a damascene method for forming damascene wiring.
- FIG. 2 is a schematic cross-sectional view showing a substrate in which a seed layer is provided between a copper-based metal and a barrier metal.
- FIG. 3 is a schematic cross-sectional view showing a state of a metal formed by the PVD method.
- FIG. 4 is a schematic cross-sectional view showing a substrate on which a ruthenium-based metal is provided instead of the copper seed layer.
- FIG. 5 is a schematic cross-sectional view showing a substrate in which a ruthenium-based metal is provided between a copper seed layer and a barrier metal.
- FIG. 6 is a schematic cross-sectional view showing a process of polishing a substrate using a CMP polishing liquid.
- each component in the composition means the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition. .
- the CMP polishing liquid according to this embodiment is a CMP polishing liquid for polishing a ruthenium-based metal.
- the CMP polishing liquid according to this embodiment has (a) abrasive particles (abrasive grains) having a negative zeta potential in the CMP polishing liquid, and (b) an inorganic acid, a monocarboxylic acid, and a plurality of carboxyl groups. And an acid component containing at least one selected from the group consisting of a carboxylic acid having no hydroxyl group and a salt thereof, (c) an oxidizing agent, (d) a triazole-based compound, and (e) a quaternary compound. Containing a phosphonium salt and (f) water.
- the CMP polishing liquid according to this embodiment has a pH of 3.0 or more and less than 7.0.
- abrasive particles In general, since abrasive particles have a predetermined hardness, a mechanical action resulting from the hardness contributes to the progress of polishing.
- the abrasive particles used in the CMP polishing liquid according to this embodiment have a negative (minus) zeta potential in the CMP polishing liquid having a pH of 3.0 or more and less than 7.0 (that is, Zeta potential is less than 0 mV). This improves the ruthenium-based metal polishing rate.
- the zeta potential is preferably ⁇ 2 mV or less, more preferably ⁇ 5 mV or less, further preferably ⁇ 10 mV or less, particularly preferably ⁇ 15 mV or less, and extremely preferably ⁇ 20 mV or less.
- the absolute value of the zeta potential is thus large (that is, away from 0 mV) from the viewpoint of suppressing the aggregation of the abrasive particles due to the repulsion of the abrasive particles.
- the zeta potential can be measured by, for example, a product name: DELSA NANO C manufactured by Beckman Coulter.
- the zeta potential ( ⁇ [mV]) can be measured by the following procedure. First, in the zeta potential measurement device, the scattering intensity of the measurement sample is 1.0 ⁇ 10 4 to 5.0 ⁇ 10 4 cps (where “cps” means counts per second, that is, counts per second, A sample is obtained by diluting the CMP polishing liquid with pure water so that Then, the sample is put into a zeta potential measurement cell and the zeta potential is measured. In order to adjust the scattering intensity to the above range, for example, the polishing slurry for CMP is diluted so that the content of the abrasive particles is 1.7 to 1.8% by mass.
- the abrasive particles are not particularly limited as long as the surface potential (zeta potential) is negative in the CMP polishing liquid, but selected from the group consisting of silica, alumina, zirconia, ceria, titania, germania, and modified products thereof. At least one of these is preferred.
- silica and alumina are preferable, and colloidal silica and colloidal alumina are more preferable from the viewpoint of good dispersion stability in the CMP polishing liquid and a small number of polishing scratches (scratches) generated by CMP. Colloidal silica is more preferable.
- the zeta potential can change depending on the pH of the CMP polishing liquid described later. For this reason, when the abrasive particles show a positive zeta potential in the polishing liquid for CMP, for example, the zeta potential of the abrasive particles is adjusted to be negative by applying a known method such as modifying the surface of the abrasive particles. it can.
- a known method such as modifying the surface of the abrasive particles.
- examples of such abrasive particles include modified products obtained by modifying the surface of abrasive particles such as silica, alumina, zirconia, ceria, titania, and germania with sulfo groups or aluminate.
- the upper limit of the average particle size of the abrasive particles is preferably 200 nm or less, more preferably 100 nm or less, and more preferably 80 nm or less from the viewpoint of good dispersion stability in the polishing liquid for CMP and a small number of polishing scratches generated by CMP. Is more preferable.
- the lower limit of the average particle size of the abrasive particles is not particularly limited, but is preferably 1 nm or more.
- the lower limit of the average particle size of the abrasive particles is more preferably 10 nm or more, further preferably 20 nm or more, particularly preferably 30 nm or more, and extremely preferably 40 nm or more from the viewpoint that the ruthenium-based metal polishing rate is easily improved.
- the “average particle diameter” of the abrasive particles means the average secondary particle diameter of the abrasive particles.
- the average particle diameter is the value of D50 (median diameter of volume distribution, cumulative median value) measured by a CMP light polishing slurry using a dynamic light scattering particle size distribution meter (for example, product name: COULTER Electronics 4 manufactured by COULTER Electronics). ).
- the average particle diameter can be measured by the following procedure. First, 100 ⁇ L of CMP polishing liquid (L represents liter; the same applies hereinafter) is weighed, and the content of abrasive particles is around 0.05 mass% (measurement transmittance (H) is 60 to 70%). The diluted solution is obtained by diluting with ion-exchanged water so that the content can be obtained. And an average particle diameter can be measured by throwing a dilution liquid into the sample tank of a dynamic light scattering type particle size distribution analyzer, and reading the value displayed as D50.
- the content of the abrasive particles is preferably 1.0% by mass or more, more preferably 5.0% by mass or more, based on the total mass of the polishing liquid for CMP, from the viewpoint that a good polishing rate of the ruthenium-based metal can be easily obtained. 10.0 mass% or more is still more preferable.
- the content of the abrasive particles is preferably 50.0% by mass or less, more preferably 30.0% by mass or less, more preferably 20.0% by mass based on the total mass of the polishing slurry for CMP, from the viewpoint of easily suppressing the occurrence of polishing scratches. A mass% or less is more preferable.
- the CMP polishing liquid according to the present embodiment is composed of an inorganic acid component (inorganic acid, inorganic acid salt, etc.) and an organic acid component (organic acid, organic acid salt, etc.) for the purpose of improving the ruthenium-based metal polishing rate.
- an acid component containing at least one selected from the group specifically, an inorganic acid, a monocarboxylic acid (a carboxylic acid having one carboxyl group), a carboxyl having a plurality of carboxyl groups and no hydroxyl group
- An acid and an acid component containing at least one selected from the group consisting of these salts are contained.
- the specific acid component reacts with the ruthenium metal to form a complex, so that it is considered that a high polishing rate for the ruthenium metal can be obtained.
- the specific acid component can increase the polishing rate of such a metal.
- Examples of the inorganic acid component include nitric acid, phosphoric acid, hydrochloric acid, sulfuric acid, chromic acid, and salts thereof.
- the inorganic acid component is preferably at least one selected from the group consisting of nitric acid, phosphoric acid and salts thereof, more preferably nitric acid, phosphoric acid and phosphate, from the viewpoint of easily maintaining a practical polishing rate. And phosphoric acid are more preferred, and phosphoric acid is particularly preferred.
- Examples of inorganic acid salts include ammonium salts. Examples of ammonium salts include ammonium nitrate, ammonium phosphate, ammonium chloride, and ammonium sulfate.
- the organic acid component may be a monocarboxylic acid, a carboxylic acid having a plurality of carboxyl groups and not having a hydroxyl group, and a compound corresponding to any of these salts. Any of carboxylic acid, dicarboxylic acid, etc.), amino acid, pyran compound, ketone compound and the like may be used.
- the organic acid component is preferably at least one selected from the group consisting of a hydroxy acid, a monocarboxylic acid and a dicarboxylic acid, and more preferably a hydroxy acid, from the viewpoint of easily maintaining a practical polishing rate.
- the organic acid component may be any of saturated carboxylic acid, unsaturated carboxylic acid, aromatic carboxylic acid and the like.
- Monocarboxylic acids include glycolic acid, lactic acid, glycine, alanine, salicylic acid, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glyceric acid and the like.
- Examples of the carboxylic acid having a plurality of carboxyl groups and having no hydroxyl group include fumaric acid, itaconic acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, and phthalic acid. It is done.
- Examples of organic acid salts include ammonium salts. Examples of ammonium salts include ammonium acetate.
- organic acid component from the viewpoint of easily maintaining a practical polishing rate, from the group consisting of glycolic acid, lactic acid, glycine, alanine, salicylic acid, acetic acid, propionic acid, fumaric acid, itaconic acid, maleic acid and salts thereof At least one selected is preferable, and at least one hydroxy acid selected from the group consisting of glycolic acid, lactic acid and salicylic acid is more preferable.
- nitric acid phosphoric acid, glycolic acid, lactic acid, glycine, alanine, salicylic acid, acetic acid, propionic acid, fumaric acid, itaconic acid, maleic acid, and salts thereof from the viewpoint of easily maintaining a practical polishing rate. It is preferably at least one selected from the group consisting of
- the acid component may be used alone or in combination of two or more.
- the content of the acid component is preferably 0.01% by mass or more, more preferably 0.1% by mass or more, based on the total mass of the CMP polishing liquid, from the viewpoint that the polishing rate of the ruthenium-based metal is easily improved. .2% by mass or more is more preferable, and 0.3% by mass or more is particularly preferable. From the same viewpoint and the viewpoint of excellent polishing liquid stability, the acid component content is preferably 1.0% by mass or less, more preferably 0.7% by mass or less, based on the total mass of the CMP polishing liquid. 0.5% by mass or less is more preferable.
- the CMP polishing liquid according to this embodiment contains a metal oxidizing agent (hereinafter simply referred to as “oxidizing agent”).
- oxidizing agent compounds corresponding to the acid component are excluded.
- the oxidizing agent is not particularly limited, but includes hydrogen peroxide, hypochlorous acid, ozone water, periodic acid, periodate, iodate, bromate, persulfate, cerium nitrate, etc. It is done. From the viewpoint of further improving the polishing rate of the ruthenium-based metal by oxidizing the ruthenium portion of the ruthenium-based metal trivalently in the acidic solution, hydrogen peroxide is preferable as the oxidizing agent. Hydrogen peroxide may be used as a hydrogen peroxide solution. Examples of salts such as periodate, iodate, bromate, persulfate, and cerium nitrate include ammonium salts. An oxidizing agent may be used individually by 1 type, and may use 2 or more types together.
- the content of the oxidizing agent is preferably 0.001% by mass or more, more preferably 0.005% by mass or more, based on the total mass of the CMP polishing liquid, from the viewpoint of further improving the ruthenium-based metal polishing rate. 0.01% by mass or more is more preferable, 0.02% by mass or more is particularly preferable, and 0.03% by mass or more is very preferable.
- the content of the oxidizing agent is preferably 50.0% by mass or less, more preferably 5.0% by mass or less, more preferably 5.0% by mass or less, based on the total mass of the polishing liquid for CMP, from the viewpoint that the surface after polishing is less likely to be rough.
- 0 mass% or less is still more preferable, 0.5 mass% or less is especially preferable, and 0.1 mass% or less is very preferable.
- an oxidizing agent that is generally available as an aqueous solution such as aqueous hydrogen peroxide, can be adjusted so that the content of the oxidizing agent contained in the aqueous solution falls within the above range in the CMP polishing liquid.
- the CMP polishing liquid according to the present embodiment contains a triazole compound as an anticorrosive for the purpose of improving the ruthenium metal polishing rate and suppressing the wiring metal dishing.
- a triazole compound as an anticorrosive for the purpose of improving the ruthenium metal polishing rate and suppressing the wiring metal dishing.
- a known compound as an anticorrosive or protective film forming agent can be used without particular limitation.
- the CMP polishing liquid contains a triazole compound, so that the nitrogen atom (N atom) in the triazole compound is ruthenium. It is speculated that the ruthenium-based metal polishing rate is improved by forming a fragile reaction layer by coordination with the metal-based metal. In addition, the reaction layer is vulnerable to mechanical action, but can contribute to the chemical action as a protective layer. Therefore, it is presumed that an anticorrosion effect (dishing suppression effect) on the wiring metal is easily obtained.
- Triazole compounds include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, 1-hydroxybenzotriazole, 1-hydroxy Propylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxyl (-1H-) benzotriazole, 4-carboxyl (-1H-) benzotriazole methyl ester, 4-carboxyl (-1H-) benzotriazole butyl ester, 4-carboxyl (-1H-) benzotriazole octyl ester, 5-hexylbenzotriazole, [1,2,3-benzotriazolyl-1-methyl] [1,2, 4-Triazolyl-1-methyl] [2-ethylhexyl] amino , Benzotriazole, 5-methyl (-1H-) benzotriazole (also known as tolyltriazole), 5-ethyl (-1H-) benzo
- the triazole-based compound As the triazole-based compound, a compound represented by the following general formula (I) is preferable. As a result, it becomes easy to improve the polishing rate of the ruthenium-based metal and to suppress dishing of the wiring metal. Although the cause of this effect is not necessarily clear, the compound represented by the general formula (I) is easily coordinated to the ruthenium metal among the triazole compounds, so that the polishing rate of the ruthenium metal is improved. It is estimated that dishing can be suppressed. Examples of the compound represented by the general formula (I) include benzotriazole, 5-methyl (-1H-) benzotriazole, 5-ethyl (-1H-) benzotriazole, 5-propyl (-1H-) benzotriazole and the like. Can be mentioned. [In Formula (I), R 1 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. ]
- 1,2,4-triazole is preferable from the viewpoint of easily improving the ruthenium-based metal polishing rate and easily suppressing the wiring metal dishing.
- the compound represented by the general formula (I) and 1,2,4-triazole in combination, the ruthenium-based metal polishing rate is further improved. That is, in the CMP polishing liquid according to this embodiment, it is preferable to use a compound represented by the general formula (I) in combination with 1,2,4-triazole.
- 1,2,4-triazole is a compound that easily coordinates to a ruthenium-based metal and is easily soluble in water among triazole-based compounds.
- 1,2,4-triazole in combination, it becomes easier to form a ruthenium-based metal complex than when these compounds are used alone, and the ruthenium-based metal polishing rate is increased. It is estimated that it can be improved. For example, by using 5-methyl (-1H-) benzotriazole in combination with 1,2,4-triazole, the ruthenium-based metal polishing rate can be further improved as compared with the case where a single triazole-based compound is used alone. Can do.
- the content of the compound represented by the general formula (I) is 0.001 mass on the basis of the total mass of the polishing liquid for CMP from the viewpoint that the etching of the wiring metal is easily suppressed and the surface to be polished is less likely to be rough. % Or more, preferably 0.01% by weight or more, more preferably 0.1% by weight or more, particularly preferably 0.2% by weight or more, and extremely preferably 0.3% by weight or more.
- the content of the compound represented by the general formula (I) is preferably 10.0% by mass or less based on the total mass of the polishing slurry for CMP, from the viewpoint that the polishing rate of the barrier metal is difficult to decrease, and is 5.0% by mass. % Or less is more preferable, 2.0% by mass or less is more preferable, and 1.0% by mass or less is particularly preferable.
- the content of the triazole-based compound is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, based on the total mass of the polishing slurry for CMP. 0.1 mass% or more is still more preferable.
- the content of the triazole-based compound is preferably 30.0% by mass or less, preferably 10.0% by mass or less based on the total mass of the polishing slurry for CMP, from the viewpoint that the reduction of the ruthenium-based metal polishing rate is easily suppressed.
- the following is more preferable, and 5.0% by mass or less is further preferable.
- the polishing slurry for CMP according to this embodiment contains a quaternary phosphonium salt for the purpose of suppressing dishing of the wiring metal by suppressing the etching rate and polishing rate of the wiring metal.
- the reason why the quaternary phosphonium salt has an anticorrosion effect (dishing suppression effect) on the wiring metal is not certain, but the phosphorus atom of the quaternary phosphonium salt is coordinated to the wiring metal and the hydrophobic group of the quaternary phosphonium salt. This is considered to cover the surface of the wiring metal.
- the quaternary phosphonium salt is preferably at least one selected from the group consisting of a triarylphosphonium salt and a tetraarylphosphonium salt, more preferably a tetraarylphosphonium salt, from the viewpoint of further suppressing dishing of the wiring metal.
- a hydrophobic effect can be easily obtained based on the three or four hydrophobic groups (aryl group) bonded to the phosphorus atom. It is easy to get an effect.
- Examples of the substituent bonded to the phosphorus atom of the quaternary phosphonium salt include an aryl group, an alkyl group, and a vinyl group.
- Examples of the aryl group bonded to the phosphorus atom include a phenyl group, a benzyl group, and a naphthyl group, and a phenyl group is preferable.
- the alkyl group bonded to the phosphorus atom may be a linear alkyl group or a branched alkyl group.
- the chain length of the alkyl group is preferably in the following range based on the number of carbon atoms.
- the number of carbon atoms in the alkyl group is preferably 1 or more, and more preferably 4 or more.
- the number of carbon atoms in the alkyl group is preferably 14 or less, and more preferably 7 or less. If the alkyl group has 14 or less carbon atoms, the storage stability of the CMP polishing liquid tends to be excellent.
- the chain length is determined by the longest chain length.
- Examples of the substituent bonded to the phosphorus atom include a halogen group, a hydroxy group (hydroxyl group), a nitro group, a cyano group, an alkoxy group, a formyl group, an amino group (such as an alkylamino group), a naphthyl group, an alkoxycarbonyl group, and a carboxy group. These substituents may be further bonded.
- an aryl group having a substituent includes 2-hydroxybenzyl group, 2-chlorobenzyl group, 4-chlorobenzyl group, 2,4-dichlorobenzyl group, 4-nitrobenzyl group, 4-ethoxybenzyl group, 1- It may be a naphthylmethyl group or the like.
- alkyl group having a substituent examples include a cyanomethyl group, a methoxymethyl group, a formylmethyl group, a methoxycarbonylmethyl group, an ethoxycarbonylmethyl group, a 3-carboxypropyl group, a 4-carboxybutyl group, and a 2-dimethylaminoethyl group. May be.
- a portion branched from the longest chain is a substituent.
- the counter anion (anion) of the quaternary phosphonium cation of the quaternary phosphonium salt is not particularly limited, but is a halogen ion (eg, F ⁇ , Cl ⁇ , Br ⁇ , I ⁇ ), a hydroxide ion, Nitrate ion, nitrite ion, hypochlorite ion, chlorite ion, chlorate ion, perchlorate ion, acetate ion, bicarbonate ion, phosphate ion, sulfate ion, hydrogen sulfate ion, sulfite ion, thiosulfuric acid And ions and carbonate ions.
- a halogen ion eg, F ⁇ , Cl ⁇ , Br ⁇ , I ⁇
- hydroxide ion eg, F ⁇ , Cl ⁇ , Br ⁇ , I ⁇
- the triarylphosphonium salt is preferably an alkyltriarylphosphonium salt (a compound having an alkyltriarylphosphonium salt structure), more preferably an alkyltriphenylphosphonium salt, from the viewpoint of further suppressing dishing of the wiring metal.
- the chain length of the alkyl group in the alkyltriarylphosphonium salt is preferably in the above-described range based on the number of carbon atoms.
- the quaternary phosphonium salt preferably contains a compound represented by the following general formula (II).
- each benzene ring may have a substituent
- R 2 represents an alkyl group or an aryl group which may have a substituent
- X ⁇ represents an anion.
- examples of the alkyl group and aryl group of R 2 include the alkyl groups and aryl groups described above.
- the alkyl group for R 2 is preferably an alkyl group having 14 or less carbon atoms from the viewpoint of excellent stability of the polishing liquid.
- the aryl group for R 2 is not particularly limited, and examples thereof include a phenyl group and a methylphenyl group.
- the above-mentioned counter anions can be used as counter anions of the quaternary phosphonium cation.
- the anion X ⁇ is not particularly limited, but is preferably a halogen ion, and more preferably a bromonium ion.
- quaternary phosphonium salt examples include methyltriphenylphosphonium salt, ethyltriphenylphosphonium salt, triphenylpropylphosphonium salt, isopropyltriphenylphosphonium salt, butyltriphenylphosphonium salt, pentyltriphenylphosphonium salt, hexyltriphenyl.
- Phosphonium salt n-heptyltriphenylphosphonium salt, triphenyl (tetradecyl) phosphonium salt, tetraphenylphosphonium salt, benzyltriphenylphosphonium salt, (2-hydroxybenzyl) triphenylphosphonium salt, (2-chlorobenzyl) triphenylphosphonium Salt, (4-chlorobenzyl) triphenylphosphonium salt, (2,4-dichlorobenzyl) phenylphosphonium salt, (4-nitrobenzyl) Triphenylphosphonium salt, 4-ethoxybenzyltriphenylphosphonium salt, (1-naphthylmethyl) triphenylphosphonium salt, (cyanomethyl) triphenylphosphonium salt, (methoxymethyl) triphenylphosphonium salt, (formylmethyl) triphenylphosphonium salt Acetonyl triphenylphosphonium salt, phenacyltriphenyl
- butyltriphenylphosphonium salt pentyltriphenylphosphonium salt, hexyltriphenylphosphonium salt, n-heptyltriphenylphosphonium salt, tetraphenylphosphonium salt, benzyltriphenylphosphonium salt from the viewpoint of excellent affinity with the wiring metal.
- Salts are preferred.
- bromonium salts and chloride salts are preferred.
- the content of the quaternary phosphonium salt is preferably 0.0001% by mass or more and 0.001% by mass based on the total mass of the polishing slurry for CMP from the viewpoint of effectively obtaining the effect of suppressing the polishing rate of the wiring metal. % Or more is more preferable, and 0.005 mass% or more is still more preferable.
- the content of the quaternary phosphonium salt is 0.1 on the basis of the total mass of the polishing slurry for CMP from the viewpoint of further suppressing the polishing rate of the wiring metal and excellent storage stability of the polishing slurry for CMP. % By mass or less is preferable, 0.05% by mass or less is more preferable, and 0.01% by mass or less is still more preferable.
- the polishing slurry for CMP according to this embodiment can further contain a metal dissolving agent for the purpose of increasing the polishing rate of a metal material such as a barrier metal other than a ruthenium-based metal.
- a metal solubilizer is not particularly limited as long as it is a compound that reacts with a metal material to form a complex, but excludes a compound corresponding to the acid component.
- the metal solubilizer include organic acids such as malic acid, tartaric acid and citric acid, organic acid esters of these organic acids, and ammonium salts of these organic acids.
- a metal dissolving agent may be used individually by 1 type, and may use 2 or more types together.
- the content of the metal solubilizer is preferably 0.001% by mass or more, based on the total mass of the polishing liquid for CMP, from the viewpoint of increasing the polishing rate of a metal material such as a barrier metal other than the ruthenium-based metal, and 0.01% by mass. % Or more is more preferable, and 0.1 mass% or more is still more preferable.
- the content of the metal solubilizer is preferably 20.0% by mass or less, preferably 10.0% by mass or less based on the total mass of the polishing liquid for CMP, from the viewpoint that etching is easily suppressed and the surface to be polished is less likely to be rough. The following is more preferable, and 5.0% by mass or less is further preferable.
- the polishing liquid for CMP according to the present embodiment uses a metal anticorrosive (except for the triazole compound) in order to suppress excessive polishing of a metal material such as a barrier metal or a wiring metal other than a ruthenium metal. Further, it can be contained.
- the metal anticorrosive is not particularly limited, and examples thereof include a compound having a thiazole skeleton, a compound having a pyrimidine skeleton, a compound having a tetrazole skeleton, a compound having an imidazole skeleton, and a compound having a pyrazole skeleton.
- Examples of the compound having a thiazole skeleton include 2-mercaptobenzothiazole.
- Examples of the compound having a pyrimidine skeleton include pyrimidine, 1,2,4-triazolo [1,5-a] pyrimidine, 1,3,4,6,7,8-hexahydro-2H-pyrimido [1,2-a Pyrimidine, 1,3-diphenyl-pyrimidine-2,4,6-trione, 1,4,5,6-tetrahydropyrimidine, 2,4,5,6-tetraaminopyrimidine sulfate, 2,4,5 -Trihydroxypyrimidine, 2,4,6-triaminopyrimidine, 2,4,6-trichloropyrimidine, 2,4,6-trimethoxypyrimidine, 2,4,6-triphenylpyrimidine, 2,4-diamino- 6-hydroxylpyrimidine, 2,4-diaminopyrimidine, 2-acetamidopyrimidine, 2-aminopyrimidine, 2-methyl-5,7-diphenyl- ( , 2,4) Triazolo [1,5-a] pyrimidine
- Examples of the compound having a tetrazole skeleton include tetrazole, 5-methyltetrazole, 5-aminotetrazole, 1- (2-dimethylaminoethyl) -5-mercaptotetrazole and the like.
- Compounds having an imidazole skeleton include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-propylimidazole, 2-butylimidazole, 4-methylimidazole, 2,4-dimethylimidazole, 2-ethyl Examples include -4-methylimidazole, 2-undecylimidazole, and 2-aminoimidazole.
- Examples of the compound having a pyrazole skeleton include pyrazole, 3,5-dimethylpyrazole, 3-amino-5-methylpyrazole, 4-methylpyrazole, 3-amino-5-hydroxypyrazole and the like.
- the metal anticorrosive may be used alone or in combination of two or more.
- the content of the metal anticorrosive is preferably 0.001% by mass or more based on the total mass of the polishing liquid for CMP, from the viewpoint of easy suppression of excessive etching on the wiring metal and being less likely to cause roughness on the surface to be polished. 0.005 mass% or more is more preferable, and 0.01 mass% or more is still more preferable.
- the content of the metal anticorrosive is preferably 10.0% by mass or less, more preferably 5.0% by mass or less, more preferably 2% by mass or less based on the total mass of the polishing slurry for CMP, from the viewpoint that the polishing rate of the barrier metal is difficult to decrease. 0.0 mass% or less is more preferable.
- the CMP polishing liquid according to this embodiment can further contain a water-soluble polymer.
- the polishing slurry for CMP contains a water-soluble polymer, the exchange current density under load can be improved, and the exchange current density under non-load can be reduced. This principle is currently not clear.
- the water-soluble polymer is not particularly limited, and polyaspartic acid, polyglutamic acid, polylysine, polymalic acid, polymethacrylic acid, polymethacrylic acid ammonium salt, polymethacrylic acid sodium salt, polyamic acid, polymaleic acid, polyitaconic acid, polyfumaric acid
- Polycarboxylic acids such as poly (p-styrene carboxylic acid), polyacrylic acid, polyacrylamide, aminopolyacrylamide, ammonium polyacrylate, sodium polyacrylate, ammonium polyamic acid, sodium polyamic acid and polyglyoxylic acid Acids and salts thereof; polysaccharides such as alginic acid, pectic acid, carboxymethylcellulose, agar, curdlan and pullulan; polyvinyl alcohol, polyvinylpyrrolidone, poly- (4-vinylpyridine) Vinyl-based polymers such as microcrystalline polyacrolein, and the like.
- a water-soluble polymer may be used
- the lower limit of the weight average molecular weight of the water-soluble polymer is preferably 500 or more, more preferably 1500 or more, and still more preferably 5000 or more. When the water-soluble polymer has a weight average molecular weight of 500 or more, a high polishing rate for the barrier metal is easily developed.
- the upper limit of the weight average molecular weight of the water-soluble polymer is not particularly limited, but is preferably 5 million or less from the viewpoint of excellent solubility.
- the weight average molecular weight of the water-soluble polymer can be measured by gel permeation chromatography (GPC) using a standard polystyrene calibration curve under the following conditions.
- the content of the water-soluble polymer is preferably 0.001% by mass or more, more preferably 0.005% by mass or more, and still more preferably 0.01% by mass or more based on the total mass of the polishing liquid for CMP.
- the content of the water-soluble polymer is preferably 15.0% by mass or less based on the total mass of the polishing slurry for CMP, from the viewpoint of sufficiently maintaining the stability of the abrasive particles contained in the polishing slurry for CMP. 0 mass% or less is more preferable, and 5.0 mass% or less is still more preferable.
- the CMP polishing liquid according to this embodiment can further contain an organic solvent.
- an organic solvent As a result, the wettability of the CMP polishing liquid to a substrate such as a substrate is improved, and the polishing rate of barrier metals other than ruthenium-based metals can be increased.
- an organic solvent there is no restriction
- organic solvent examples include carbonates such as ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, and methyl ethyl carbonate; lactones such as butyrolactone and propyrolactone; ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol Glycols such as triethylene glycol and tripropylene glycol; derivatives of glycols include ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, triethylene glycol monomethyl ether, tripropylene glycol monomethyl ether , Ethylene glycol monoethyl Ether, propylene glycol monoethyl ether, diethylene glycol monoethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monoethyl ether, tripropylene glycol monoethyl ether, ethylene glycol monopropyl
- the content of the organic solvent is preferably 0.1% by mass or more based on the total mass of the polishing slurry for CMP from the viewpoint of sufficiently ensuring the wettability of the polishing slurry for CMP to a substrate such as a substrate. 2 mass% or more is more preferable, and 0.5 mass% or more is still more preferable.
- the content of the organic solvent is preferably 50.0% by mass or less, more preferably 30.0% by mass or less, and more preferably 10.0% by mass based on the total mass of the polishing slurry for CMP from the viewpoint of sufficiently ensuring dispersibility. A mass% or less is more preferable.
- the CMP polishing liquid according to this embodiment can further contain a surfactant.
- the surfactant include water-soluble anionic surfactants such as ammonium lauryl sulfate and polyoxyethylene lauryl ether ammonium sulfate; water-soluble nonionic surfactants such as polyoxyethylene lauryl ether and polyethylene glycol monostearate, and the like. It is done.
- a water-soluble anionic surfactant is preferable.
- it is more preferable to use at least one water-soluble anionic surfactant such as a polymer dispersant obtained using an ammonium salt as a copolymerization component.
- a water-soluble nonionic surfactant, a water-soluble anionic surfactant, a water-soluble cationic surfactant and the like may be used in combination.
- the content of the surfactant is, for example, 0.0001 to 0.1% by mass based on the total mass of the CMP polishing liquid.
- the CMP polishing liquid according to the present embodiment contains water.
- the content of water in the CMP polishing liquid may be the remainder of the polishing liquid excluding the contents of other components.
- the pH of the polishing slurry for CMP is less than 7.0 from the viewpoint of improving the polishing rate of the ruthenium-based metal by electrostatic attraction between the abrasive particles and the ruthenium-based metal.
- the pH of the polishing slurry for CMP is preferably 6.0 or less, more preferably 5.8 or less, and even more preferably 5.5 or less, from the viewpoint of obtaining a further excellent polishing rate of the ruthenium-based metal.
- the pH of the polishing slurry for CMP is 3.0 or more from the viewpoint of suppressing dishing of the wiring metal.
- the pH of the polishing slurry for CMP is preferably 3.5 or more, more preferably 4.0 or more, and still more preferably 4.3 or more, from the viewpoint of further suppressing the wiring metal dishing.
- well-known pH adjusters such as an acid and a base, can be used.
- the pH is defined as the pH at a liquid temperature of 25 ° C.
- the pH of the polishing slurry for CMP can be measured with a pH meter (for example, model number: PHL-40, manufactured by Electrochemical Instrument Co., Ltd.). For example, after two-point calibration using a standard buffer (phthalate pH buffer, pH: 4.01 (25 ° C.); neutral phosphate pH buffer, pH: 6.86 (25 ° C.))
- the pH of the CMP polishing liquid can be measured by placing the electrode in the CMP polishing liquid and measuring the value after 2 minutes or more have passed and stabilized.
- the CMP polishing liquid according to the present embodiment can be stored, transported and used by dividing the components of the CMP polishing liquid into a plurality of liquids.
- the CMP polishing liquid according to this embodiment may be stored separately for components containing an oxidizing agent and components other than the oxidizing agent, and the abrasive particles, the acid component, the triazole compound, and the
- the first liquid containing a quaternary phosphonium salt and the second liquid containing the oxidizing agent may be stored separately.
- the first liquid may further contain a metal solubilizer, a metal anticorrosive, a water-soluble polymer, an organic solvent, a surfactant and the like.
- the polishing method includes a polishing step of polishing at least a part of the ruthenium-based metal by polishing the substrate having the ruthenium-based metal using the CMP polishing liquid.
- the polishing liquid for CMP is supplied between a surface to be polished of a substrate having a ruthenium-based metal and a polishing pad (polishing cloth) to remove at least a part of the ruthenium-based metal.
- the ruthenium-based metal is polished in the polishing step using the CMP polishing liquid. At least a part of the metal and at least a part of the wiring metal may be removed.
- the substrate to be polished using the CMP polishing liquid is, for example, a substrate having a ruthenium-based metal and a wiring metal.
- the ruthenium-based metal is, for example, layered (a layer containing a ruthenium-based metal).
- the substrate include a substrate such as a semiconductor substrate; a component such as an aircraft component or an automobile component; a vehicle such as a railway vehicle; a housing of an electronic device.
- the polishing method according to the present embodiment may further include a step of forming a ruthenium-based metal on a base (first base) and preparing a base having a ruthenium-based metal (second base).
- a method for forming the ruthenium-based metal a method other than the PVD method is preferable, at least one method selected from the group consisting of the CVD method and the ALD method is more preferable, and the CVD method is more preferable.
- fine wiring for example, wiring width 15 nm or less
- Ruthenium-based metals can be easily removed at the polishing rate.
- a ruthenium-based metal formed by a method other than the PVD method for example, a CVD method or an ALD method
- a ruthenium-based metal formed by the PVD method at an excellent polishing rate it can also be polished.
- polishing method will be described in detail by exemplifying a case where the base is a semiconductor substrate.
- An example in which a ruthenium-based metal and a wiring metal are used when the substrate is a semiconductor substrate includes a damascene wiring forming process.
- reference numeral 11 is an insulating material
- reference numeral 12 is a barrier metal
- reference numeral 13 is a ruthenium-based metal
- reference numeral 14 is a wiring metal.
- a groove concave portion
- the barrier metal 12 is formed on the insulating material 11 so as to follow the shape of the surface of the insulating material 11.
- the ruthenium-based metal 13 is formed on the barrier metal 12 so as to follow the shape of the barrier metal 12, and finally the wiring metal 14 is formed on the ruthenium-based metal 13 so as to fill the recess and cover the entire surface. Can be obtained.
- FIG. 5 there is a technique in which a ruthenium-based metal 13 is provided between a barrier metal 12 and a seed layer 15 using a metal material similar to the wiring metal 14. That is, by adding a step of forming the seed layer 15 using the same metal material as the wiring metal 14 after the formation of the ruthenium-based metal 13 in FIG. 4, the semiconductor substrate having the structure shown in FIG. 5 is obtained.
- the wiring metal preferably contains a copper-based metal such as copper, a copper alloy, a copper oxide, or a copper alloy oxide.
- the wiring metal can be formed by a known sputtering method, plating method or the like.
- Examples of the ruthenium-based metal include ruthenium, a ruthenium alloy (for example, an alloy having a ruthenium content exceeding 50% by mass), a ruthenium compound, and the like.
- Examples of the ruthenium alloy include a ruthenium tantalum alloy and a ruthenium titanium alloy.
- Examples of the ruthenium compound include ruthenium nitride.
- the barrier metal is formed for the purpose of preventing the wiring metal from diffusing into the insulating material.
- Tantalum-type metals such as a tantalum, a tantalum alloy, a tantalum compound (for example, tantalum nitride); Titanium-type metals, such as titanium, a titanium alloy, a titanium compound (for example, titanium nitride); Tungsten, a tungsten alloy And tungsten-based metals such as tungsten compounds (for example, tungsten nitride).
- the insulating material is not particularly limited as long as it can reduce the parasitic capacitance between elements or between wirings and has an insulating property, and is an inorganic material such as SiO 2 , SiOF, Si—H containing SiO 2 ; carbon Organic inorganic hybrid materials such as containing SiO 2 (SiOC) and methyl group containing SiO 2 ; organic polymer materials such as fluororesin polymer (eg PTFE polymer), polyimide polymer, polyallyl ether polymer, parylene polymer, etc. Can be mentioned.
- inorganic material such as SiO 2 , SiOF, Si—H containing SiO 2 ; carbon Organic inorganic hybrid materials such as containing SiO 2 (SiOC) and methyl group containing SiO 2 ; organic polymer materials such as fluororesin polymer (eg PTFE polymer), polyimide polymer, polyallyl ether polymer, parylene polymer, etc. Can be mentioned.
- FIG. 6 is a cross-sectional view showing a state before polishing the substrate
- FIG. 6B is a cross-sectional view showing a state of the substrate after the first polishing step
- FIG. FIG. 5 is a cross-sectional view showing a state of the substrate after the second polishing step.
- the wiring metal 14 is polished using a CMP polishing liquid for wiring metal to expose the ruthenium-based metal 13 present on the convex portions of the insulating material 11, and the substrate having the structure shown in FIG. Obtain (first polishing step).
- the ruthenium-based metal 13 and the barrier metal 12 existing on the convex portion of the insulating material 11 and a part of the wiring metal 14 existing in the concave portion of the insulating material 11 are polished, so that the convex portion of the insulating material 11 is polished.
- the CMP polishing liquid according to the present embodiment is preferably used in at least the second polishing process.
- polishing may be continued for a predetermined time (over polishing). That is, in the present embodiment, in the polishing step, the substrate is polished using the CMP polishing liquid, so that at least a part of the ruthenium-based metal, at least a part of the wiring metal, and at least one of the insulating materials. May be removed.
- the dishing amount of the wiring portion (for example, the maximum depth from the surface of the wiring portion) is preferably 30 nm or less, and more preferably 20 nm or less.
- the CMP polishing liquid according to the present embodiment may be used for polishing in which the dishing amount of the wiring portion having a width of 1 ⁇ m including the wiring metal is 30 nm or less (preferably 20 nm or less).
- the CMP polishing liquid according to the present embodiment may be used to polish the ruthenium-based metal and the wiring metal.
- a polishing apparatus for example, a general polishing apparatus having a surface plate to which a polishing pad can be attached and a holder for holding a substrate can be used. A motor or the like that can change the rotational speed may be attached to the surface plate.
- a polishing pad A general nonwoven fabric, a foaming polyurethane, a porous fluororesin, etc. can be used.
- the polishing conditions are not particularly limited, but it is preferable to adjust the rotational speed of the surface plate to a low rotational speed of 200 min ⁇ 1 or less so that the substrate does not jump out.
- the pressure applied to the substrate pressed against the polishing pad is preferably 4 to 100 kPa, and more preferably 6 to 50 kPa from the viewpoint of excellent uniformity in the substrate surface and flatness of the pattern.
- polishing pressure is preferably 4 to 100 kPa, and more preferably 6 to 50 kPa from the viewpoint of excellent uniformity in the substrate surface and flatness of the pattern.
- polishing it is preferable to continuously supply the polishing liquid for CMP to the polishing pad with a pump or the like. Although there is no restriction
- the substrate is preferably washed in running water and then dried after removing water droplets adhering to the substrate using a spin dryer or the like.
- the type of the polishing liquid and the blending ratio thereof may be other than the types and blending ratios described in the present embodiment, and the composition and structure of the polishing target may be other than those described in the present embodiment. Also, it may be a structure.
- a polishing liquid was prepared by the following method using each component shown in Tables 1 and 2.
- Example 1 15.0 parts by weight of colloidal silica having an average secondary particle size of 60 nm and a surface modified with a sulfo group, 0.4 parts by weight of phosphoric acid, 0.03 parts by weight of hydrogen peroxide, 1,2,4-triazole 3 After mixing 0.0 part by mass, 0.005 part by mass of tetraphenylphosphonium bromide and water, the pH was adjusted to the value shown in Table 1 using ammonia water to prepare 100 parts by mass of a polishing slurry for CMP.
- the said addition amount of the said colloidal silica, the said phosphoric acid, and the said hydrogen peroxide is adjusted using the colloidal silica liquid whose silica particle content is 20 mass%, 85 mass% phosphoric acid aqueous solution, and 30 mass% hydrogen peroxide water. did.
- Examples 2 to 8 and Comparative Examples 1 to 5 The components shown in Table 1 were mixed and operated in the same manner as in Example 1 to prepare CMP polishing liquids of Examples 2 to 8 and CMP polishing liquids of Comparative Examples 1 to 5.
- anionic colloidal silica colloidal silica having an average secondary particle size of 60 nm and a surface modified with a sulfo group was used.
- Example 9 to 18 and Comparative Examples 6 to 7 The components shown in Table 2 were mixed and operated in the same manner as in Example 1 to prepare CMP polishing liquids of Examples 9 to 18 and CMP polishing liquids of Comparative Examples 6 to 7.
- anionic colloidal silica colloidal silica having an average secondary particle size of 60 nm and a surface modified with a sulfo group was used.
- the zeta potential of the colloidal silica of the polishing slurry for CMP was measured using “DELSA NANO C” manufactured by Beckman Coulter.
- Polishing apparatus single-sided metal film polishing machine (Applied Materials, Reflexion LK) Polishing pad: Polishing pad made of foamed polyurethane resin Surface plate rotation speed: 123 min ⁇ 1 Head rotation speed: 117 min -1 Polishing pressure: 10.3 kPa (1.5 psi) Supply amount of polishing liquid: 300 mL / min
- a sponge brush (made of polyvinyl alcohol resin) was pressed against the surface to be polished of the substrate polished above, and then the substrate and the sponge brush were rotated while supplying distilled water to the substrate, followed by washing for 60 seconds. Next, after removing the sponge brush, distilled water was supplied to the polished surface of the substrate for 60 seconds. Finally, the substrate was dried by spinning off the substrate at high speed to blow off distilled water.
- polishing rate was evaluated as follows. Ruthenium blanket substrate and Cu blanket substrate polished and cleaned under the above conditions based on the film thickness difference before and after polishing measured using Hitachi Kokusai Electric Co., Ltd., metal film thickness measuring device (product name: VR-120 / 08S) The polishing rate was determined. The measurement results are shown in Tables 1 and 2 as “ruthenium polishing rate” and “Cu polishing rate”.
- Pattern board with copper wiring having a diameter of 12 inches (30.5 cm) ( ⁇ ) (manufactured by Advanced Material Technology, SEMATECH754 CMP pattern: an interlayer insulating film made of silicon dioxide having a thickness of 3000 mm: a pattern having a copper wiring width of 1 ⁇ m and a wiring density of 50%
- the copper film other than the concave portion (groove portion) of the first portion was polished by a known CMP method using a copper film polishing liquid to expose the convex barrier layer on the surface to be polished.
- This pattern substrate was cut into small pieces of 2 cm ⁇ 2 cm and used for the following polishing.
- the barrier layer of the pattern substrate was a PVD ruthenium film having a thickness of 300 mm + PVD tantalum nitride film having a thickness of 300 mm.
- the dishing of the patterned substrate after polishing was evaluated under the following conditions. That is, with respect to the wiring metal part having a copper wiring width of 1 ⁇ m and a wiring density of 50% in the patterned substrate after polishing, the reduction amount of the wiring metal part with respect to the insulating film part was obtained with a stylus type step meter. The dishing amount was evaluated based on the reduction amount. The case where the dishing amount was 20 nm or less was evaluated as the best result, and indicated as “A” in the table. When the dishing amount was more than 20 nm and not more than 30 nm, it was evaluated as a good result and indicated as “B” in the table. The case where the dishing amount exceeds 30 nm is indicated as “C” in the table. The evaluation results are shown in Tables 1 and 2.
- Examples 1 to 18 are polishing liquids containing one or two triazole compounds of 5-methyl (-1H-) benzotriazole, 1,2,4-triazole and benzotriazole, and a quaternary phosphonium salt. Shows the evaluation results of ruthenium polishing rate, Cu polishing rate, Cu etching rate, and dishing amount. From this result, the polishing liquid contains the triazole compound and the quaternary phosphonium salt, so that the ruthenium polishing rate can be maintained high, and the Cu polishing rate and the Cu etching rate can be suppressed to reduce the dishing amount. I understand.
- Examples 3, 5, and 6 show the evaluation results when the pH is different. From these evaluation results, it is understood that the dishing amount can be reduced while maintaining the ruthenium polishing rate high by adjusting the pH to 3.0 or more and less than 7.0.
- the content of the quaternary phosphonium salt is different.
- the Cu etching rate is reduced, and the Cu etching rate is further reduced when the content of the quaternary phosphonium salt is 0.005 mass%.
- Examples 3 and 8 show the evaluation results when phosphoric acid and nitric acid are used as acid components, respectively. In either case, the ruthenium polishing rate is good.
- Examples 9 to 18 show the evaluation results when various acid components specified in the present application are used. In either case, the ruthenium polishing rate is good.
- Comparative Example 1 From the results of Comparative Example 1, it can be seen that when the pH is 2.5, the Cu polishing rate, Cu etching rate, and dishing amount are large. From the results of Comparative Example 2, it can be seen that if the polishing liquid does not contain a triazole compound, the Cu polishing rate, the Cu etching rate, and the dishing amount are large. From the results of Comparative Example 3, it can be seen that when the pH is 7.0, the ruthenium polishing rate is low. From the results of Comparative Examples 4, 6, and 7, it can be seen that the ruthenium polishing rate is low when the predetermined acid component of the present application is not used. From the results of Comparative Example 5, it can be seen that if the polishing liquid does not contain a quaternary phosphonium salt, the Cu polishing rate, the Cu etching rate, and the dishing amount are large.
- the ruthenium-based metal polishing rate can be improved and the wiring metal dishing can be suppressed as compared with the case where a conventional CMP polishing liquid is used.
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Abstract
Description
本実施形態に係るCMP用研磨液は、ルテニウム系金属を研磨するためのCMP用研磨液である。本実施形態に係るCMP用研磨液は、(a)CMP用研磨液中において負のゼータ電位を有する研磨粒子(砥粒)と、(b)無機酸、モノカルボン酸、複数のカルボキシル基を有し且つ水酸基を有さないカルボン酸、及び、これらの塩からなる群より選ばれる少なくとも一種を含む酸成分と、(c)酸化剤と、(d)トリアゾール系化合物と、(e)第四級ホスホニウム塩と、(f)水と、を含有する。本実施形態に係るCMP用研磨液のpHは3.0以上7.0未満である。
一般に、研磨粒子は所定の硬度を有するため、その硬度に起因する機械的作用が研磨の進行に寄与する。本実施形態に係るCMP用研磨液において使用される研磨粒子は、pHが3.0以上7.0未満であるCMP用研磨液中において負(マイナス)のゼータ電位を有している(すなわち、ゼータ電位が0mVより小さい)。これにより、ルテニウム系金属の研磨速度が向上する。この理由は明確ではないが、研磨粒子が負のゼータ電位を有することで、研磨粒子とルテニウム系金属とが静電的に吸引しあう相互作用が発現し、ルテニウム系金属の研磨速度が向上すると考えられる。
本実施形態に係るCMP用研磨液は、ルテニウム系金属の研磨速度を向上させる目的で、無機酸成分(無機酸、無機酸塩等)及び有機酸成分(有機酸、有機酸塩等)からなる群より選ばれる少なくとも一種を含む酸成分を含有し、具体的には、無機酸、モノカルボン酸(一つのカルボキシル基を有するカルボン酸)、複数のカルボキシル基を有し且つ水酸基を有さないカルボン酸、及び、これらの塩からなる群より選ばれる少なくとも一種を含む酸成分を含有する。前記特定の酸成分がルテニウム系金属と反応し錯体を形成することで、ルテニウム系金属に対する高い研磨速度が得られると考えられる。研磨対象の基体がルテニウム系金属以外のバリア金属等を有する場合、前記特定の酸成分は、このような金属の研磨速度を高めることもできる。
本実施形態に係るCMP用研磨液は、金属の酸化剤(以下、単に「酸化剤」という)を含有する。酸化剤としては、前記酸成分に該当する化合物を除く。
本実施形態に係るCMP用研磨液は、ルテニウム系金属の研磨速度を向上させると共に配線金属のディッシングを抑制する目的で、防食剤としてトリアゾール系化合物を含有する。トリアゾール系化合物としては、防食剤又は保護膜形成剤として公知の化合物を特に制限なく使用できる。
本実施形態に係るCMP用研磨液は、配線金属のエッチング速度及び研磨速度を抑制することにより配線金属のディッシングを抑制する目的で、第四級ホスホニウム塩を含有する。第四級ホスホニウム塩が配線金属に対する防食効果(ディッシングの抑制効果)を有する理由は確かではないが、第四級ホスホニウム塩のリン原子が配線金属に配位し、第四級ホスホニウム塩の疎水基が配線金属の表面を覆うためと考えられる。
本実施形態に係るCMP用研磨液は、ルテニウム系金属以外のバリア金属等の金属材料の研磨速度を高める目的で、金属溶解剤を更に含有できる。このような金属溶解剤としては、金属材料と反応し錯体を形成する化合物であれば特に制限はないが、前記酸成分に該当する化合物を除く。金属溶解剤としては、リンゴ酸、酒石酸、クエン酸等の有機酸、これらの有機酸の有機酸エステル、及び、これら有機酸のアンモニウム塩などが挙げられる。
本実施形態に係るCMP用研磨液は、ルテニウム系金属以外のバリア金属又は配線金属等の金属材料が過度に研磨されることを抑制するために、金属防食剤(前記トリアゾール系化合物を除く)を更に含有できる。
本実施形態に係るCMP用研磨液は、水溶性ポリマーを更に含有できる。CMP用研磨液が水溶性ポリマーを含有することにより、荷重下での交換電流密度を向上させることができると共に、非荷重下での交換電流密度を低下させることができる。この原理に関しては現在明確にはなっていない。
試料:10μL
標準ポリスチレン:東ソー株式会社製、標準ポリスチレン(分子量:190000、17900、9100、2980、578、474、370、266)
検出器:株式会社日立製作所製、RI-モニター、製品名「L-3000」
インテグレーター:株式会社日立製作所製、GPCインテグレーター、製品名「D-2200」
ポンプ:株式会社日立製作所製、製品名「L-6000」
デガス装置:昭和電工株式会社製、製品名「Shodex DEGAS」(「Shodex」は登録商標)
カラム:日立化成株式会社製、製品名「GL-R440」、「GL-R430」、「GL-R420」をこの順番で連結して使用
溶離液:テトラヒドロフラン(THF)
測定温度:23℃
流速:1.75mL/分
測定時間:45分
本実施形態に係るCMP用研磨液は、有機溶媒を更に含有できる。これにより、CMP用研磨液の基板等の基体への濡れ性が向上し、ルテニウム系金属以外のバリア金属等の研磨速度を高めることができる。有機溶媒としては、特に制限はないが、水と任意に混合できる溶媒が好ましい。
本実施形態に係るCMP用研磨液は、界面活性剤を更に含有できる。界面活性剤としては、ラウリル硫酸アンモニウム、ポリオキシエチレンラウリルエーテル硫酸アンモニウム等の水溶性陰イオン性界面活性剤;ポリオキシエチレンラウリルエーテル、ポリエチレングリコールモノステアレート等の水溶性非イオン性界面活性剤などが挙げられる。これらの中でも、界面活性剤としては、水溶性陰イオン性界面活性剤が好ましい。特に、共重合成分としてアンモニウム塩を用いて得られた高分子分散剤等の水溶性陰イオン性界面活性剤の少なくとも一種を使用することがより好ましい。水溶性非イオン性界面活性剤、水溶性陰イオン性界面活性剤、水溶性陽イオン性界面活性剤等を併用してもよい。界面活性剤の含有量は、CMP用研磨液の全質量基準で例えば0.0001~0.1質量%である。
本実施形態に係るCMP用研磨液は、水を含有している。CMP用研磨液における水の含有量は、他の構成成分の含有量を除いた研磨液の残部でよい。
本実施形態に係るCMP用研磨液のpHは、研磨粒子とルテニウム系金属との静電的吸引作用によってルテニウム系金属の研磨速度を向上させる観点から、7.0未満である。CMP用研磨液のpHは、ルテニウム系金属の更に優れた研磨速度が得られる観点から、6.0以下が好ましく、5.8以下がより好ましく、5.5以下が更に好ましい。CMP用研磨液のpHは、配線金属のディッシングを抑制する観点から、3.0以上である。CMP用研磨液のpHは、配線金属のディッシングを更に抑制する観点から、3.5以上が好ましく、4.0以上がより好ましく、4.3以上が更に好ましい。なお、pHを調整するために、酸及び塩基等の公知のpH調整剤を使用できる。pHは液温25℃におけるpHと定義する。
次に、本実施形態に係る研磨方法について説明する。
表1及び表2に示す各成分を用いて研磨液を下記の方法で作製した。
平均二次粒径が60nmであり且つ表面をスルホ基により修飾したコロイダルシリカ15.0質量部、リン酸0.4質量部、過酸化水素0.03質量部、1,2,4-トリアゾール3.0質量部、テトラフェニルホスホニウムブロミド0.005質量部及び水を混合した後、アンモニア水を用いてpHを表1に示す値に調整して、100質量部のCMP用研磨液を作製した。なお、前記コロイダルシリカ、前記リン酸、前記過酸化水素の前記添加量は、シリカ粒子含有量20質量%のコロイダルシリカ液、85質量%リン酸水溶液、30質量%過酸化水素水を用いて調整した。
表1に示す各成分を混合し、実施例1と同様に操作して実施例2~8のCMP用研磨液及び比較例1~5のCMP用研磨液を作製した。アニオン性コロイダルシリカとして、平均二次粒径が60nmであり且つ表面をスルホ基により修飾したコロイダルシリカを用いた。
表2に示す各成分を混合し、実施例1と同様に操作して実施例9~18のCMP用研磨液及び比較例6~7のCMP用研磨液を作製した。アニオン性コロイダルシリカとして、平均二次粒径が60nmであり且つ表面をスルホ基により修飾したコロイダルシリカを用いた。
CMP用研磨液における研磨粒子のゼータ電位、及び、CMP用研磨液のpHを下記の手順及び条件で求めた。測定結果は表1及び表2に示すとおりである。
CMP用研磨液のコロイダルシリカのゼータ電位を、ベックマンコールター社製「DELSA NANO C」を使用して測定した。
測定温度:25±5℃
測定器:電気化学計器株式会社製、型番:PHL-40
以下の項目により、実施例1~18及び比較例1~7の評価を行った。
[被研磨基体]
厚さ15nm(150Å)のルテニウム膜をCVD法でシリコン基板上に形成したルテニウムブランケット基板を用意した。
厚さ1000nm(10000Å)の銅膜をめっき法でシリコン基板上に形成したCuブランケット基板を用意した。
実施例1~18及び比較例1~7のCMP用研磨液を用いて、下記研磨条件で前記被研磨基体をそれぞれ60秒間CMPした。
研磨パッド:発泡ポリウレタン樹脂製研磨パッド
定盤回転数:123min-1
ヘッド回転数:117min-1
研磨圧力:10.3kPa(1.5psi)
研磨液の供給量:300mL/min
前記で研磨した基板の被研磨面にスポンジブラシ(ポリビニルアルコール系樹脂製)を押し付けた後、蒸留水を基板に供給しながら基板とスポンジブラシを回転させ、60秒間洗浄した。次に、スポンジブラシを取り除いた後、基板の被研磨面に蒸留水を60秒間供給した。最後に、基板を高速で回転させて蒸留水を弾き飛ばして基板を乾燥した。
研磨速度を下記のように評価した。株式会社日立国際電気製、金属膜厚測定装置(製品名:VR-120/08S)を用いて測定した研磨前後の膜厚差に基づき、前記条件で研磨及び洗浄したルテニウムブランケット基板及びCuブランケット基板の研磨速度を求めた。測定結果を「ルテニウム研磨速度」、「Cu研磨速度」として表1及び表2に示す。
(2-1.銅に対するエッチング量の評価)
前記CMP用研磨液を攪拌(液温:50℃、攪拌速度:200min―1)しつつ、銅膜が製膜された測定基板を研磨液へ浸漬し、浸漬前後の銅膜の膜厚差を電気抵抗値から換算して求めた。そして、膜厚差からエッチング速度を求めた。測定基板としては、直径8インチ(20cm)(φ)サイズのシリコン基板上に厚さ20μmの銅膜が製膜された基板(グローバルネット社製)を2cm×2cmに切断したチップを用いた。前記CMP用研磨液の液量は100mLとした。評価結果を表1及び表2に示す。
CMP後の基板(前記(1.ルテニウム系金属の研磨評価)におけるルテニウムブランケット基板)を目視観察、光学顕微鏡観察及び電子顕微鏡観察し、研磨傷の発生の有無を確認した。その結果、すべての実施例及び比較例において顕著な研磨傷の発生は認められなかった。
[パターン基板(被研磨基体)の作製]
基体として以下の基板を用意した。直径12インチ(30.5cm)(φ)サイズの銅配線付きパターン基板(Advanced Material Technology社製 SEMATECH754CMPパターン:二酸化ケイ素からなる厚さ3000Åの層間絶縁膜:銅配線幅1μm、配線密度50%のパターンを有する)の凹部(溝部)以外の銅膜を、銅膜用研磨液を用いて公知のCMP法により研磨して凸部のバリア層を被研磨面に露出させた。このパターン基板を2cm×2cmの小片に切断し、下記の研磨に使用した。なお、前記パターン基板のバリア層は、厚さ300ÅのPVDルテニウム膜+300ÅのPVD窒化タンタル膜であった。
実施例1~18及び比較例1~7のCMP用研磨液を用いて、前記研磨条件で前記被研磨基体をそれぞれ60秒間CMPした。
前記研磨後パターン基板のディッシングを下記条件により評価した。すなわち、前記研磨後パターン基板における銅配線幅1μm、配線密度50%である配線金属部について、絶縁膜部に対する配線金属部の減り量を触針式段差計で求めた。そして、減り量に基づいてディッシング量を評価した。ディッシング量が20nm以下であった場合を最も良好な結果と評価し、表中「A」として表記した。ディッシング量が20nmを超え30nm以下であった場合を良好な結果と評価し、表中「B」として表記した。ディッシング量が30nmを超える場合を表中「C」として表記した。評価結果を表1及び表2に示す。
Claims (14)
- ルテニウム系金属を研磨するためのCMP用研磨液であって、
研磨粒子と、酸成分と、酸化剤と、トリアゾール系化合物と、第四級ホスホニウム塩と、水と、を含有し、
前記酸成分が、無機酸、モノカルボン酸、複数のカルボキシル基を有し且つ水酸基を有さないカルボン酸、及び、これらの塩からなる群より選ばれる少なくとも一種を含み、
前記研磨粒子が前記CMP用研磨液中において負のゼータ電位を有し、
前記CMP用研磨液のpHが3.0以上7.0未満である、CMP用研磨液。 - 前記トリアゾール系化合物が、1,2,4-トリアゾールを含む、請求項1又は2に記載のCMP用研磨液。
- 前記酸成分が、硝酸、リン酸、グリコール酸、乳酸、グリシン、アラニン、サリチル酸、酢酸、プロピオン酸、フマル酸、イタコン酸、マレイン酸及びこれらの塩からなる群より選ばれる少なくとも一種を含む、請求項1~3のいずれか一項に記載のCMP用研磨液。
- 前記第四級ホスホニウム塩が、トリアリールホスホニウム塩及びテトラアリールホスホニウム塩からなる群より選ばれる少なくとも一種を含む、請求項1~4のいずれか一項に記載のCMP用研磨液。
- ルテニウム系金属と配線金属とを研磨するための、請求項1~6のいずれか一項に記載のCMP用研磨液。
- 前記配線金属を含む幅1μmの配線部分のディッシング量が30nm以下である研磨のための、請求項7に記載のCMP用研磨液。
- 前記研磨粒子、前記酸成分、前記トリアゾール系化合物及び前記第四級ホスホニウム塩を含む第一の液と、前記酸化剤を含む第二の液と、に分けて保管される、請求項1~8のいずれか一項に記載のCMP用研磨液。
- 請求項1~9のいずれか一項に記載のCMP用研磨液を用いて、ルテニウム系金属を有する基体を研磨して、前記ルテニウム系金属の少なくとも一部を除去する研磨工程を備える、研磨方法。
- 前記基体が配線金属を更に有し、前記研磨工程において、前記ルテニウム系金属の少なくとも一部と、前記配線金属の少なくとも一部とを除去する、請求項10に記載の研磨方法。
- 前記配線金属が銅系金属を含む、請求項11に記載の研磨方法。
- 物理気相成長法以外の形成方法でルテニウム系金属を基体上に形成して、ルテニウム系金属を有する基体を用意する工程を更に備える、請求項10~12のいずれか一項に記載の研磨方法。
- 前記形成方法が、化学気相成長法及び原子層堆積法からなる群より選ばれる少なくとも一種である、請求項13に記載の研磨方法。
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KR1020157026305A KR20160002729A (ko) | 2013-04-25 | 2014-04-24 | Cmp용 연마액 및 이것을 사용한 연마 방법 |
US14/786,928 US20160107286A1 (en) | 2013-04-25 | 2014-04-24 | Cmp polishing solution and polishing method using same |
JP2015513833A JPWO2014175393A1 (ja) | 2013-04-25 | 2014-04-24 | Cmp用研磨液及びこれを用いた研磨方法 |
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Cited By (3)
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WO2017204035A1 (ja) * | 2016-05-26 | 2017-11-30 | 富士フイルム株式会社 | 研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法 |
JP2019537277A (ja) * | 2016-09-28 | 2019-12-19 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨 |
WO2024048271A1 (ja) * | 2022-09-01 | 2024-03-07 | Jsr株式会社 | 化学機械研磨用組成物及び研磨方法 |
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USD776801S1 (en) * | 2014-06-24 | 2017-01-17 | Kobe Steel, Ltd | Heat exchanger tube |
US20160060487A1 (en) * | 2014-08-29 | 2016-03-03 | Cabot Microelectronics Corporation | Composition and method for polishing a sapphire surface |
JP6376046B2 (ja) * | 2015-05-13 | 2018-08-22 | 信越化学工業株式会社 | 基板の製造方法 |
EP3774647A4 (en) * | 2018-03-28 | 2022-04-06 | FUJIFILM Electronic Materials U.S.A, Inc. | CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS |
US11189497B2 (en) * | 2019-05-17 | 2021-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical planarization using nano-abrasive slurry |
US11495471B2 (en) * | 2019-09-26 | 2022-11-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Slurry compositions for chemical mechanical planarization |
TW202132527A (zh) * | 2019-12-12 | 2021-09-01 | 日商Jsr股份有限公司 | 化學機械研磨用組成物及研磨方法 |
US20210253904A1 (en) * | 2020-02-13 | 2021-08-19 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
US11820919B2 (en) | 2021-10-19 | 2023-11-21 | Tokyo Electron Limited | Ruthenium CMP chemistry based on halogenation |
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- 2014-04-24 JP JP2015513833A patent/JPWO2014175393A1/ja active Pending
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WO2017204035A1 (ja) * | 2016-05-26 | 2017-11-30 | 富士フイルム株式会社 | 研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法 |
JPWO2017204035A1 (ja) * | 2016-05-26 | 2019-04-25 | 富士フイルム株式会社 | 研磨液、研磨液の製造方法、研磨液原液、及び化学的機械的研磨方法 |
JP2019537277A (ja) * | 2016-09-28 | 2019-12-19 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨 |
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Also Published As
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JPWO2014175393A1 (ja) | 2017-02-23 |
TW201510196A (zh) | 2015-03-16 |
KR20160002729A (ko) | 2016-01-08 |
US20160107286A1 (en) | 2016-04-21 |
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