TWI241937B - CMP method for noble metals - Google Patents
CMP method for noble metals Download PDFInfo
- Publication number
- TWI241937B TWI241937B TW093104092A TW93104092A TWI241937B TW I241937 B TWI241937 B TW I241937B TW 093104092 A TW093104092 A TW 093104092A TW 93104092 A TW93104092 A TW 93104092A TW I241937 B TWI241937 B TW I241937B
- Authority
- TW
- Taiwan
- Prior art keywords
- acid
- polishing
- group
- weight
- sulfonic acid
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/694—Electrodes comprising noble metals or noble metal oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/376,172 US7097541B2 (en) | 2002-01-22 | 2003-02-27 | CMP method for noble metals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200427549A TW200427549A (en) | 2004-12-16 |
| TWI241937B true TWI241937B (en) | 2005-10-21 |
Family
ID=32926283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093104092A TWI241937B (en) | 2003-02-27 | 2004-02-19 | CMP method for noble metals |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7097541B2 (https=) |
| EP (1) | EP1599555B1 (https=) |
| JP (1) | JP4709136B2 (https=) |
| KR (1) | KR101082268B1 (https=) |
| CN (1) | CN1753961B (https=) |
| TW (1) | TWI241937B (https=) |
| WO (1) | WO2004076574A2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI408739B (zh) * | 2005-12-21 | 2013-09-11 | Anji Microelectronics Co Ltd | 化學機械拋光系統、方法以及研磨劑 |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
| US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
| US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
| US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
| US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| KR100648264B1 (ko) * | 2004-08-17 | 2006-11-23 | 삼성전자주식회사 | 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법 |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| ATE529489T1 (de) * | 2004-12-22 | 2011-11-15 | Showa Denko Kk | Polierzusammensetzung und polierverfahren |
| US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| JP2007088209A (ja) * | 2005-09-22 | 2007-04-05 | Fujifilm Corp | 貴金属用研磨液、及び、化学的機械的研磨方法 |
| JP2007088258A (ja) * | 2005-09-22 | 2007-04-05 | Fujifilm Corp | 金属研磨液及びそれを用いる研磨方法 |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| US7955519B2 (en) * | 2005-09-30 | 2011-06-07 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US7732393B2 (en) * | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
| US7368066B2 (en) * | 2006-05-31 | 2008-05-06 | Cabot Microelectronics Corporation | Gold CMP composition and method |
| CN101496143B (zh) * | 2006-07-28 | 2011-04-06 | 昭和电工株式会社 | 研磨组合物 |
| US7776230B2 (en) * | 2006-08-30 | 2010-08-17 | Cabot Microelectronics Corporation | CMP system utilizing halogen adduct |
| JP2008091411A (ja) * | 2006-09-29 | 2008-04-17 | Fujifilm Corp | 金属用研磨液 |
| US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
| WO2008142093A1 (en) | 2007-05-24 | 2008-11-27 | Basf Se | Chemical-mechanical polishing composition comprising metal-organic framework materials |
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
| US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| CN102105267B (zh) * | 2008-06-18 | 2016-08-03 | 福吉米株式会社 | 抛光组合物及利用该抛光组合物的抛光方法 |
| US20100096584A1 (en) * | 2008-10-22 | 2010-04-22 | Fujimi Corporation | Polishing Composition and Polishing Method Using the Same |
| KR101268615B1 (ko) | 2008-12-11 | 2013-06-04 | 히타치가세이가부시끼가이샤 | Cmp용 연마액 및 이것을 이용한 연마 방법 |
| JP5455452B2 (ja) * | 2009-06-05 | 2014-03-26 | Jsr株式会社 | 表面処理用組成物、表面処理方法および半導体装置の製造方法 |
| TWI454562B (zh) | 2009-07-16 | 2014-10-01 | 日立化成股份有限公司 | 鈀研磨用cmp研磨液以及研磨方法 |
| US9799532B2 (en) * | 2010-02-15 | 2017-10-24 | Hitachi Chemical Company, Ltd. | CMP polishing solution and polishing method |
| JP5649940B2 (ja) * | 2010-12-07 | 2015-01-07 | Jsr株式会社 | 半導体装置の製造方法 |
| CN103562337A (zh) * | 2011-03-30 | 2014-02-05 | 福吉米株式会社 | 研磨用组合物和研磨方法 |
| JP2012234948A (ja) * | 2011-04-28 | 2012-11-29 | Fujimi Inc | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| EP3428933B1 (en) * | 2011-09-30 | 2022-03-02 | View, Inc. | Improved optical device fabrication |
| WO2013137192A1 (ja) * | 2012-03-16 | 2013-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US8999193B2 (en) * | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
| JPWO2014175393A1 (ja) | 2013-04-25 | 2017-02-23 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
| JPWO2014175397A1 (ja) | 2013-04-25 | 2017-02-23 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
| US9012327B2 (en) * | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
| US9434859B2 (en) * | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
| CN104131286B (zh) * | 2014-07-01 | 2015-10-28 | 安徽宏发节能设备有限公司 | 一种质量稳定抛光效率高的金属抛光液及其制备方法 |
| JP6459275B2 (ja) * | 2014-07-28 | 2019-01-30 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
| WO2019069370A1 (ja) | 2017-10-03 | 2019-04-11 | 日立化成株式会社 | 研磨液、研磨液セット、研磨方法及び欠陥抑制方法 |
| EP3774647A4 (en) | 2018-03-28 | 2022-04-06 | FUJIFILM Electronic Materials U.S.A, Inc. | CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS |
| JP7209004B2 (ja) | 2018-03-28 | 2023-01-19 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | ルテニウムバリアの化学機械研磨スラリー |
| JP7088797B2 (ja) * | 2018-09-25 | 2022-06-21 | 株式会社フジミインコーポレーテッド | タングステン溶解抑制剤、ならびにこれを用いた研磨用組成物および表面処理組成物 |
| TWI787564B (zh) * | 2018-12-10 | 2022-12-21 | 美商Cmc材料股份有限公司 | 無氧化劑化學機械拋光(cmp)漿料及釕化學機械拋光 |
| CN113004798B (zh) * | 2019-12-19 | 2024-04-12 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| CN114716915A (zh) * | 2021-01-04 | 2022-07-08 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
| TWI859998B (zh) * | 2022-09-01 | 2024-10-21 | 日商Jsr股份有限公司 | 化學機械研磨用組成物及研磨方法 |
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| US20020039839A1 (en) | 1999-12-14 | 2002-04-04 | Thomas Terence M. | Polishing compositions for noble metals |
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-
2003
- 2003-02-27 US US10/376,172 patent/US7097541B2/en not_active Expired - Lifetime
-
2004
- 2004-02-19 CN CN2004800052227A patent/CN1753961B/zh not_active Expired - Lifetime
- 2004-02-19 TW TW093104092A patent/TWI241937B/zh not_active IP Right Cessation
- 2004-02-19 JP JP2006502501A patent/JP4709136B2/ja not_active Expired - Lifetime
- 2004-02-19 WO PCT/IB2004/000993 patent/WO2004076574A2/en not_active Ceased
- 2004-02-19 EP EP04712639.6A patent/EP1599555B1/en not_active Expired - Lifetime
-
2005
- 2005-08-26 KR KR1020057015903A patent/KR101082268B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI408739B (zh) * | 2005-12-21 | 2013-09-11 | Anji Microelectronics Co Ltd | 化學機械拋光系統、方法以及研磨劑 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050105495A (ko) | 2005-11-04 |
| WO2004076574A2 (en) | 2004-09-10 |
| TW200427549A (en) | 2004-12-16 |
| CN1753961B (zh) | 2010-08-11 |
| US7097541B2 (en) | 2006-08-29 |
| JP4709136B2 (ja) | 2011-06-22 |
| CN1753961A (zh) | 2006-03-29 |
| JP2006519490A (ja) | 2006-08-24 |
| KR101082268B1 (ko) | 2011-11-09 |
| WO2004076574A3 (en) | 2004-12-23 |
| US20030181142A1 (en) | 2003-09-25 |
| EP1599555A2 (en) | 2005-11-30 |
| EP1599555B1 (en) | 2019-06-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |