JP2006253289A - 電子回路およびその製造方法 - Google Patents
電子回路およびその製造方法 Download PDFInfo
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- JP2006253289A JP2006253289A JP2005065431A JP2005065431A JP2006253289A JP 2006253289 A JP2006253289 A JP 2006253289A JP 2005065431 A JP2005065431 A JP 2005065431A JP 2005065431 A JP2005065431 A JP 2005065431A JP 2006253289 A JP2006253289 A JP 2006253289A
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- bonding
- electronic circuit
- bonding pad
- substrate
- wire
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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Abstract
【解決手段】 基板1に形成した第1層金属パタン3と、第1層金属パタン3の上に形成したポリイミド膜2と、ポリイミド膜2の表面に形成した第2層金属パタンとを有し、第1層金属パタンにダイボンディングした半導体チップ7と電気的接続を取るために、第2層金属パタン31の表面にボールボンディングにより形成された導体バンプ4を形成する。この導体バンプ4と半導体チップ7の電極72をワイヤボンディングにより電気的に接続する。
【選択図】 図8
Description
図2において、基板1の表面上には、ポリイミド膜2が形成されている。具体的には、液状のポリイミドを基板1にスピン塗布した後、350℃でキュア(熱硬化)して形成する。なお、感光性のポリイミドを用いてキュア前にパタンニングしても良いし、非感光性のポリイミドを用いて、キュア後にホトレジ工程を経てヒドラジンによるエッチングでパタンニングしても良い。基板1の部材としては、窒化アルミ(AlN)基板を用いた。ポリイミド膜2の膜厚は、2μm(キュア後)とした。発明者の知見に拠れば、絶縁樹脂膜の膜厚は0.1〜100μmの範囲の場合、効果を最大限発揮できる。
図3は、第一のボンディングパッド31のみがポリイミド膜2上に形成され、第二のボンディングパッド31は、基板1上に形成されている。このような構造であっても導体バンプ4がポリイミド膜2上に形成された第一のボンディングパッド31上に設置すれば、実施例の効果は図2と同様になる。
以上に記した基板、樹脂絶縁膜および金属膜(ボンディングパッド)の変形例の有用性に付いては、後述する他の実施例でも同様である。
なお、ワイヤボンディングのセカンドボンディングをステッチボンディングと呼ぶことがある。ボールボンディング、ウェッジボンディング、ステッチボンディング等は、いずれも超音波ボンディングである。また、ボンディングパッドは、結果としてボンディングする箇所であるが、配線の意味を含む。また、バンプは突起部の意味である。
窒化アルミからなる基板1上には、Cr/Cu/Auからなる配線層3が形成されており、その上層の一部にはポリイミド膜2が形成されている。樹脂絶縁層2の表面には、複数のボンディングパッド31が形成されている。ここで、ボンディングパッド31は、配線層も兼ねている。ボンディングパッド31上には、ボールボンダにより形成されたAuからなる導体バンプ4が具備されている。
Claims (9)
- 基板と、この基板に形成された樹脂絶縁膜と、この樹脂絶縁膜上に形成した金属膜とを含む電子回路であって、
前記金属膜上には、導体ワイヤを超音波ボンディングするバンプが更に形成されていることを特徴とする電子回路。 - 基板と、この基板に形成された樹脂絶縁膜と、この樹脂絶縁膜の表面に形成された金属膜からなる第1のボンディングパッドと、この第1のボンディングパッド上に形成されたバンプと、前記第1のボンディングパッドと電気的接続をされた第2のボンディングパッドとからなる電子回路であって、
前記電気的接続は、前記第2のボンディングパッドと前記バンプとの間の接続する金属ワイヤによりなされていることを特徴とする電子回路。 - 基板と、この基板に形成された樹脂絶縁膜と、この樹脂絶縁膜の表面に形成された金属膜をパタンニングすることによって第1配線、第2配線、第3配線が形成され、前記第2配線を間に挟んだ前記第1配線と前記第3配線とが電気的に接続されてなる電子回路であって、
前記第1配線にはバンプが形成され、このバンプと前記第3配線とが金属ワイヤにより接続されていることを特徴とする電子回路。 - 請求項1ないし請求項3のいずれか一つに記載の電子回路であって、
前記樹脂絶縁膜はポリイミド、エポキシ樹脂、アクリル樹脂のいずれかを主成分とする部材であることを特徴とする電子回路。 - 請求項1ないし請求項3のいずれか一つに記載の電子回路であって、
前記バンプがAu、Alのいずれか、あるいはこれらのいずれかを主成分とする部材であることを特徴とする電子回路。 - 請求項1ないし請求項3のいずれか一つに記載の電子回路であって、
前記金属膜の表層がAu、Alのいずれか、もしくはこれらのいずれかを主成分とする部材であることを特徴とする電子回路。 - 請求項6に記載の電子回路であって、
前記金属膜の膜厚は0.02μmを超え30μm以下であることを特徴とする電子回路。 - 基板に樹脂絶縁膜を形成する工程と、
前記樹脂絶縁膜上に金属膜を形成する工程と、
前記金属膜をパタンニングする工程と、
パタンニングされた金属膜に導体ワイヤを超音波ボンディングするバンプを形成する工程と、
からなる電子回路の製造方法。 - 基板と、この基板に形成された樹脂絶縁膜と、この樹脂絶縁膜の表面に形成された金属膜からなる第一のボンディングパッドと第二のボンディングパッドとを具備してなる電子回路の製造方法であって、
前記第一のボンディングパッドに導体バンプを形成する工程と、
前記第二のボンディングパッドにワイヤボンディングの第一回目のボンディングを行う工程と
前記導体バンプにワイヤボンディングの第二回目のボンディングを行い、前記第一のボンディングパッドと前記第二のボンディングパッドとを電気的に接続する工程と、
を含む電子回路の製造方法。
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US11/814,847 US20090294158A1 (en) | 2005-03-09 | 2006-03-09 | Electronic circuit and method for manufacturing same |
PCT/JP2006/304571 WO2006095805A1 (ja) | 2005-03-09 | 2006-03-09 | 電子回路およびその製造方法 |
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US20090294158A1 (en) | 2009-12-03 |
JP4558539B2 (ja) | 2010-10-06 |
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