JP2006202831A - 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 - Google Patents
結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 Download PDFInfo
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- 238000005406 washing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】 表面に凹凸が形成された結晶シリコンウエハ1であって、凹凸は第1の凹凸2と第1の凹凸2よりも小さい第2の凹凸3とを含む結晶シリコンウエハとその結晶シリコンウエハを用いた結晶シリコンウエハ太陽電池、結晶シリコンウエハの製造方法および結晶シリコンウエハ太陽電池の製造方法である。
【選択図】 図1
Description
まず、キャスト法を用いて多結晶シリコンインゴットを形成した。ここで、キャスト法においては、シリコンの融点以上である1400℃から1500℃程度において鋳型(キャスト)の中で溶融したシリコンを徐冷して固めることにより多結晶シリコンインゴットを形成した。
実施例1の結晶シリコンウエハを用いて結晶シリコン太陽電池を作製した。また、比較として、比較例1の結晶シリコンウエハを用いて結晶シリコン太陽電池を作製した。ここで、これらの結晶シリコンウエハの導電型はp型であって、比抵抗は約1Ω・cmであった。
Claims (12)
- 表面に凹凸が形成された結晶シリコンウエハであって、前記凹凸は、第1の凹凸と、前記第1の凹凸よりも小さい第2の凹凸と、を含む、結晶シリコンウエハ。
- 前記第1の凹凸の幅が10μm以上30μm以下であり、前記第1の凹凸の高さが5μm以上20μm以下であることを特徴とする、請求項1に記載の結晶シリコンウエハ。
- 前記第2の凹凸の幅が0.1μm以上5μm以下であり、前記第2の凹凸の高さが0.1μm以上3μm以下であることを特徴とする、請求項1または2に記載の結晶シリコンウエハ。
- 多結晶であることを特徴とする、請求項1から3のいずれかに記載の結晶シリコンウエハ。
- 表面に凹凸が形成された結晶シリコン太陽電池であって、前記凹凸は、第1の凹凸と、前記第1の凹凸よりも小さい第2の凹凸と、を含む、結晶シリコン太陽電池。
- 前記第1の凹凸の幅が10μm以上30μm以下であり、前記第1の凹凸の高さが5μm以上20μm以下であることを特徴とする、請求項5に記載の結晶シリコン太陽電池。
- 前記第2の凹凸の幅が0.1μm以上5μm以下であり、前記第2の凹凸の高さが0.1μm以上3μm以下であることを特徴とする、請求項5または6に記載の結晶シリコン太陽電池。
- 多結晶シリコンを用いることを特徴とする、請求項5から7のいずれかに記載の結晶シリコン太陽電池。
- 結晶シリコンインゴッドをワイヤソーを用いてスライスする工程と、硝酸濃度が15質量%以上32質量%以下である硝酸とフッ化水素濃度が6質量%以上22質量%以下であるフッ酸とを含むエッチング液を用いて前記スライス後の結晶シリコンインゴッドをエッチングする工程と、を含む、結晶シリコンウエハの製造方法。
- 前記ワイヤソーを用いてスライスする工程においては、粒径が10μm以上40μm以下の砥粒が用いられることを特徴とする、請求項9に記載の結晶シリコンウエハの製造方法。
- 結晶シリコンインゴッドをワイヤソーを用いてスライスする工程と、硝酸濃度が15質量%以上32質量%以下である硝酸とフッ化水素濃度が6質量%以上22質量%以下であるフッ酸とを含むエッチング液を用いて前記スライス後の結晶シリコンインゴッドをエッチングする工程と、を含む、結晶シリコン太陽電池の製造方法。
- 前記エッチング後の結晶シリコンウエハにpn接合を形成する工程と、前記エッチング後の結晶シリコンウエハに電極を形成する工程と、を含むことを特徴とする、請求項11に記載の結晶シリコン太陽電池の製造方法。
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JP2005010319A JP4766880B2 (ja) | 2005-01-18 | 2005-01-18 | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
PCT/JP2005/023793 WO2006077719A1 (ja) | 2005-01-18 | 2005-12-26 | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
EP05819571A EP1855322A1 (en) | 2005-01-18 | 2005-12-26 | Crystalline silicon wafer, crystalline silicon solar cell, method for manufacturing crystalline silicon wafer and method for manufacturing crystalline silicon solar cell |
US11/794,956 US20080001243A1 (en) | 2005-01-18 | 2005-12-26 | Crystalline Silicon Wafer, Crystalline Silicon Solar Cell, Method of Manufacturing Crystalline Silicon Wafer, and Method of Manufacturing Crystalline Silicon Solar Cell |
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JP2012160568A (ja) * | 2011-01-31 | 2012-08-23 | National Institute Of Advanced Industrial & Technology | 太陽電池用基板の作製方法および太陽電池 |
WO2012105441A1 (ja) * | 2011-01-31 | 2012-08-09 | 株式会社不二製作所 | 太陽電池用基板の作製方法および太陽電池 |
JP2014225633A (ja) * | 2013-04-26 | 2014-12-04 | 株式会社Tkx | 太陽電池用シリコンウエハー及びその製造方法 |
Also Published As
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US20080001243A1 (en) | 2008-01-03 |
EP1855322A1 (en) | 2007-11-14 |
JP4766880B2 (ja) | 2011-09-07 |
WO2006077719A1 (ja) | 2006-07-27 |
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