JP2006179926A - 二種の抵抗体を含む不揮発性メモリ素子 - Google Patents
二種の抵抗体を含む不揮発性メモリ素子 Download PDFInfo
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- JP2006179926A JP2006179926A JP2005368262A JP2005368262A JP2006179926A JP 2006179926 A JP2006179926 A JP 2006179926A JP 2005368262 A JP2005368262 A JP 2005368262A JP 2005368262 A JP2005368262 A JP 2005368262A JP 2006179926 A JP2006179926 A JP 2006179926A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 229910010052 TiAlO Inorganic materials 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004770 chalcogenides Chemical group 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
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- Semiconductor Memories (AREA)
Abstract
【解決手段】下部電極と、下部電極上に形成されて2種以上の抵抗パターンを示す第1抵抗層と、第1抵抗層上に形成され、スレショルドスイッチング特性を持つ第2抵抗層と、第2抵抗層上に形成された上部電極と、を備える二種の抵抗体を含む不揮発性メモリ素子。
【選択図】図1
Description
12 第1抵抗層、
13 第2抵抗層、
14 上部電極。
Claims (6)
- 不揮発性半導体メモリ素子において、
下部電極と、
前記下部電極上に形成されて2種以上の抵抗パターンを示す第1抵抗層と、
前記第1抵抗層上に形成され、スレショルドスイッチング特性を持つ第2抵抗層と、
前記第2抵抗層上に形成された上部電極と、を備えることを特徴とする二種の抵抗体を含む不揮発性メモリ素子。 - 前記第1抵抗層は、NiO、NiO2、Ni2O3、TiO2、HfO、ZrO、ZnO、WO3、CoOおよびNb2O5からなる群より選択される少なくとも1種を含むことを特徴とする請求項1に記載の二種の抵抗体を含む不揮発性メモリ素子。
- 前記第2抵抗層は、V2O5またはTiAlO3を含むことを特徴とする請求項1に記載の二種の抵抗体を含む不揮発性メモリ素子。
- 互いに平行となるように、間隔をもって配列された2本以上のビットラインと、
前記ビットラインと交差するように形成された2本以上のワードラインと、
前記ビットラインと前記ワードラインとの交差部に形成されて2種以上の抵抗パターンを示す第1抵抗層と、
前記第1抵抗層と前記ワードラインとの交差部に形成され、スレショルドスイッチング特性を持つ第2抵抗層と、を備えることを特徴とする二種の抵抗体を含む不揮発性メモリ素子アレイ。 - 前記第1抵抗層は、NiO、NiO2、Ni2O3、TiO2、HfO、ZrO、ZnO、WO3、CoOおよびNb2O5からなる群より選択される少なくとも1種を含むことを特徴とする請求項4に記載の二種の抵抗体を含む不揮発性メモリ素子。
- 前記第2抵抗層は、V2O5またはTiAlO3を含むことを特徴とする請求項4に記載の二種の抵抗体を含む不揮発性メモリ素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040109268A KR100682908B1 (ko) | 2004-12-21 | 2004-12-21 | 두개의 저항체를 지닌 비휘발성 메모리 소자 |
KR10-2004-0109268 | 2004-12-21 |
Publications (2)
Publication Number | Publication Date |
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JP2006179926A true JP2006179926A (ja) | 2006-07-06 |
JP5028011B2 JP5028011B2 (ja) | 2012-09-19 |
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JP2005368262A Active JP5028011B2 (ja) | 2004-12-21 | 2005-12-21 | 二種の抵抗体を含む不揮発性メモリ素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7400027B2 (ja) |
JP (1) | JP5028011B2 (ja) |
KR (1) | KR100682908B1 (ja) |
CN (1) | CN100524875C (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008107941A1 (ja) * | 2007-03-01 | 2008-09-12 | Fujitsu Limited | 半導体装置及びその製造方法 |
WO2009096363A1 (ja) * | 2008-01-28 | 2009-08-06 | Nec Corporation | 抵抗変化型不揮発性記憶装置とその製造方法 |
JP2009212380A (ja) * | 2008-03-05 | 2009-09-17 | Fujitsu Ltd | 抵抗変化型メモリおよびその作製方法 |
JP2010534941A (ja) * | 2007-07-25 | 2010-11-11 | インターモレキュラー, インコーポレイテッド | 多状態の不揮発性メモリ素子 |
WO2012073471A1 (ja) * | 2010-12-01 | 2012-06-07 | キヤノンアネルバ株式会社 | 不揮発性記憶素子およびその製造方法 |
JP2012533195A (ja) * | 2009-07-13 | 2012-12-20 | シーゲイト テクノロジー エルエルシー | 非オーム選択層を有する不揮発性メモリセル |
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KR101176542B1 (ko) * | 2006-03-02 | 2012-08-24 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 이를 포함하는 메모리 어레이 |
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US20060131554A1 (en) | 2006-06-22 |
CN1815770A (zh) | 2006-08-09 |
KR20060070694A (ko) | 2006-06-26 |
US7400027B2 (en) | 2008-07-15 |
CN100524875C (zh) | 2009-08-05 |
KR100682908B1 (ko) | 2007-02-15 |
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