JP2006024941A5 - - Google Patents

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Publication number
JP2006024941A5
JP2006024941A5 JP2005198439A JP2005198439A JP2006024941A5 JP 2006024941 A5 JP2006024941 A5 JP 2006024941A5 JP 2005198439 A JP2005198439 A JP 2005198439A JP 2005198439 A JP2005198439 A JP 2005198439A JP 2006024941 A5 JP2006024941 A5 JP 2006024941A5
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Japan
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image
aberration
change
predicted
control signal
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JP2005198439A
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Japanese (ja)
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JP4027382B2 (ja
JP2006024941A (ja
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Priority claimed from US10/886,051 external-priority patent/US7403264B2/en
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JP2005198439A 2004-07-08 2005-07-07 リソグラフィ投影装置及びそのリソグラフィ投影装置を使用するデバイス製造方法 Expired - Fee Related JP4027382B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/886,051 US7403264B2 (en) 2004-07-08 2004-07-08 Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus

Publications (3)

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JP2006024941A JP2006024941A (ja) 2006-01-26
JP2006024941A5 true JP2006024941A5 (enExample) 2007-10-18
JP4027382B2 JP4027382B2 (ja) 2007-12-26

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JP2005198439A Expired - Fee Related JP4027382B2 (ja) 2004-07-08 2005-07-07 リソグラフィ投影装置及びそのリソグラフィ投影装置を使用するデバイス製造方法

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US (2) US7403264B2 (enExample)
EP (2) EP1975723A1 (enExample)
JP (1) JP4027382B2 (enExample)
KR (1) KR100795140B1 (enExample)
CN (1) CN100524041C (enExample)
DE (1) DE602005010014D1 (enExample)
TW (1) TWI266358B (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674964B1 (ko) * 2005-03-14 2007-01-26 삼성전자주식회사 포토마스크 교정 방법 및 시스템 장치
US7403265B2 (en) 2005-03-30 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing data filtering
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US7643976B2 (en) * 2006-02-28 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for identifying lens aberration sensitive patterns in an integrated circuit chip
CN100474115C (zh) 2006-04-04 2009-04-01 上海微电子装备有限公司 光刻机成像光学系统像差现场测量方法
US7583359B2 (en) * 2006-05-05 2009-09-01 Asml Netherlands B.V. Reduction of fit error due to non-uniform sample distribution
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
US8576377B2 (en) * 2006-12-28 2013-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010519768A (ja) * 2007-02-23 2010-06-03 ケーエルエー−テンカー・コーポレーション プロセス条件測定デバイス
US7829249B2 (en) * 2007-03-05 2010-11-09 Asml Netherlands B.V. Device manufacturing method, computer program and lithographic apparatus
US8237913B2 (en) * 2007-05-08 2012-08-07 Asml Netherlands B.V. Lithographic apparatus and method
US20080278698A1 (en) * 2007-05-08 2008-11-13 Asml Netherlands B.V. Lithographic apparatus and method
DE102007030051B4 (de) * 2007-06-29 2018-05-30 Globalfoundries Inc. Waferlayout-Optimierungsverfahren und System
JP5264116B2 (ja) * 2007-07-26 2013-08-14 キヤノン株式会社 結像特性変動予測方法、露光装置、並びにデバイス製造方法
US7873585B2 (en) * 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
WO2009039883A1 (en) * 2007-09-26 2009-04-02 Carl Zeiss Smt Ag Optical imaging device with thermal stabilization
KR100945924B1 (ko) * 2007-12-20 2010-03-05 주식회사 하이닉스반도체 노광 렌즈의 디스토션 수차 보정 방법
DE102008011501A1 (de) 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
NL1036668A1 (nl) * 2008-03-20 2009-09-22 Asml Netherlands Bv Lithographic Apparatus and Device Manufacturing Method.
US8570485B2 (en) 2008-06-03 2013-10-29 Asml Netherlands B.V. Lens heating compensation systems and methods
DE102008042356A1 (de) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
NL2003718A (en) 2008-11-10 2010-05-11 Brion Tech Inc Methods and system for model-based generic matching and tuning.
NL2003818A (en) * 2008-12-18 2010-06-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US8786824B2 (en) * 2009-06-10 2014-07-22 Asml Netherlands B.V. Source-mask optimization in lithographic apparatus
NL2005449A (en) * 2009-11-16 2012-04-05 Asml Netherlands Bv Lithographic method and apparatus.
IL210832A (en) * 2010-02-19 2016-11-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2392970A3 (en) * 2010-02-19 2017-08-23 ASML Netherlands BV Method and apparatus for controlling a lithographic apparatus
DE102010029651A1 (de) 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
KR101529807B1 (ko) 2011-01-20 2015-06-17 칼 짜이스 에스엠티 게엠베하 투영 노광 도구를 조작하는 방법
NL2008285A (en) * 2011-03-11 2012-09-12 Asml Netherlands Bv Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process.
CN102184878B (zh) * 2011-04-01 2013-04-10 无锡睿当科技有限公司 一种用于晶圆对准的模板图像质量反馈方法
US8572518B2 (en) * 2011-06-23 2013-10-29 Nikon Precision Inc. Predicting pattern critical dimensions in a lithographic exposure process
US8582114B2 (en) 2011-08-15 2013-11-12 Kla-Tencor Corporation Overlay metrology by pupil phase analysis
US9097978B2 (en) * 2012-02-03 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus to characterize photolithography lens quality
US8691477B2 (en) * 2012-02-22 2014-04-08 Nanya Technology Corp. Reticle design for the reduction of lens heating phenomenon
NL2010262A (en) * 2012-03-07 2013-09-10 Asml Netherlands Bv Lithographic method and apparatus.
DE102012205096B3 (de) 2012-03-29 2013-08-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
CN102692814B (zh) * 2012-06-18 2013-09-11 北京理工大学 一种基于Abbe矢量成像模型的光源-掩模混合优化方法
JP6039932B2 (ja) * 2012-06-22 2016-12-07 キヤノン株式会社 露光装置、露光方法及び物品の製造方法
DE102012212757A1 (de) * 2012-07-20 2014-01-23 Carl Zeiss Smt Gmbh Verfahren zum betreiben einer mikrolithographischen projektionsbelichtungsanlage
US8948495B2 (en) * 2012-08-01 2015-02-03 Kla-Tencor Corp. Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
JP2014143306A (ja) * 2013-01-24 2014-08-07 Canon Inc 露光方法、露光装置、それを用いたデバイスの製造方法
DE102013203338A1 (de) * 2013-02-28 2014-08-28 Carl Zeiss Smt Gmbh Modellbasierte Steuerung einer optischen Abbildungseinrichtung
JP6381188B2 (ja) * 2013-08-13 2018-08-29 キヤノン株式会社 露光装置およびデバイスの製造方法
US9158878B2 (en) * 2013-08-23 2015-10-13 Kabushiki Kaisha Toshiba Method and apparatus for generating circuit layout using design model and specification
US9087740B2 (en) * 2013-12-09 2015-07-21 International Business Machines Corporation Fabrication of lithographic image fields using a proximity stitch metrology
KR101898087B1 (ko) * 2013-12-30 2018-09-12 에이에스엠엘 네델란즈 비.브이. 메트롤로지 타겟의 디자인을 위한 장치 및 방법
WO2016034428A2 (en) * 2014-09-01 2016-03-10 Asml Netherlands B.V. Method of measuring a property of a target structure, inspection apparatus, lithographic system and device manufacturing method
JP2017538156A (ja) * 2014-12-02 2017-12-21 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ方法及び装置
US10078272B2 (en) 2014-12-02 2018-09-18 Asml Netherlands B.V. Lithographic method and apparatus
EP4701179A3 (en) 2015-05-06 2026-03-11 Dolby Laboratories Licensing Corporation Thermal compensation in image projection
JP6458173B2 (ja) * 2015-07-16 2019-01-23 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置およびデバイス製造方法
WO2017012859A1 (en) * 2015-07-20 2017-01-26 Asml Netherlands B.V. Methods for controlling lithographic apparatus, lithographic apparatus and device manufacturing method
JP6588766B2 (ja) * 2015-08-10 2019-10-09 キヤノン株式会社 評価方法、露光方法、露光装置、プログラム、および物品の製造方法
CN108292105B (zh) 2015-09-24 2021-03-26 Asml荷兰有限公司 减少光刻工艺中掩模版的加热和/或冷却的影响的方法
KR102410381B1 (ko) * 2015-11-20 2022-06-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 작동시키는 방법
US10691028B2 (en) * 2016-02-02 2020-06-23 Kla-Tencor Corporation Overlay variance stabilization methods and systems
JP6730850B2 (ja) * 2016-06-01 2020-07-29 キヤノン株式会社 露光条件の決定方法、プログラム、情報処理装置、露光装置、および物品製造方法
JP2019524221A (ja) * 2016-07-14 2019-09-05 インサイテック リミテッド 前例に基づく超音波フォーカシング
DE102016212959A1 (de) * 2016-07-15 2018-01-18 Carl Zeiss Smt Gmbh Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente, sowie mikrolithographische Projektionsbelichtungsanlage
JP6445501B2 (ja) * 2016-09-20 2018-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影露光ツールを作動させる方法
EP3312693A1 (en) * 2016-10-21 2018-04-25 ASML Netherlands B.V. Methods & apparatus for controlling an industrial process
JP6854914B2 (ja) 2017-04-06 2021-04-07 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ方法及び装置
WO2019029933A1 (en) 2017-08-07 2019-02-14 Asml Netherlands B.V. COMPUTER METROLOGY
EP3444673A1 (en) * 2017-08-14 2019-02-20 ASML Netherlands B.V. Method of adapting feed-forward parameters
JP7173730B2 (ja) * 2017-11-24 2022-11-16 キヤノン株式会社 処理装置を管理する管理方法、管理装置、プログラム、および、物品製造方法
US11422472B2 (en) * 2017-12-22 2022-08-23 Asml Netherlands B.V. Patterning process improvement involving optical aberration
KR102074974B1 (ko) * 2018-01-23 2020-02-07 윤형열 패턴 형성 장치 및 방법
CN110502132B (zh) * 2018-05-18 2022-08-12 致伸科技股份有限公司 鼠标装置
JP2019070812A (ja) * 2018-11-29 2019-05-09 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影露光ツールを作動させる方法
CN113126443B (zh) * 2019-12-31 2021-12-10 上海微电子装备(集团)股份有限公司 解决光刻机像面畸变的工艺方法及装置、掩膜版设计方法
EP3893057A1 (en) * 2020-04-10 2021-10-13 ASML Netherlands B.V. Aligning a distorted image
JP7750876B2 (ja) * 2020-07-01 2025-10-07 エーエスエムエル ネザーランズ ビー.ブイ. 迅速な計測回復のための精密真空ウィンドウビューポート及びペリクル
CN114690593B (zh) * 2020-12-30 2024-06-11 科磊股份有限公司 一种制造集成电路的方法和系统
JP2024065682A (ja) * 2022-10-31 2024-05-15 キヤノン株式会社 露光方法、露光装置及び物品の製造方法
JP2024065681A (ja) 2022-10-31 2024-05-15 キヤノン株式会社 露光方法、露光装置及び物品の製造方法
CN118859634B (zh) * 2023-04-27 2025-09-16 中芯南方集成电路制造有限公司 套刻补偿方法及装置、存储介质、电子设备
KR20250168615A (ko) 2023-12-26 2025-12-02 하쿠토 가부시키가이샤 투영 노광 장치

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318980C2 (de) * 1982-07-09 1986-09-18 Perkin-Elmer Censor Anstalt, Vaduz Vorrichtung zum Justieren beim Projektionskopieren von Masken
JPH0712012B2 (ja) * 1985-12-11 1995-02-08 株式会社ニコン 投影露光装置
JPH0821531B2 (ja) * 1986-08-29 1996-03-04 株式会社ニコン 投影光学装置
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
DE59105735D1 (de) 1990-05-02 1995-07-20 Fraunhofer Ges Forschung Belichtungsvorrichtung.
JPH05144701A (ja) * 1991-11-22 1993-06-11 Canon Inc 投影露光装置及びそれを用いた半導体素子の製造方法
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
EP0721608B1 (en) * 1994-08-02 2003-10-01 Koninklijke Philips Electronics N.V. Method of repetitively imaging a mask pattern on a substrate
JP3445045B2 (ja) * 1994-12-29 2003-09-08 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
KR960042227A (ko) * 1995-05-19 1996-12-21 오노 시게오 투영노광장치
JP3412981B2 (ja) * 1995-08-29 2003-06-03 キヤノン株式会社 投影露光装置および投影露光方法
EP0824722B1 (en) 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
ATE216091T1 (de) 1997-01-29 2002-04-15 Micronic Laser Systems Ab Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
DE19827603A1 (de) 1998-06-20 1999-12-23 Zeiss Carl Fa Optisches System, insbesondere Projektions-Belichtungsanlage der Mikrolithographie
US6115108A (en) * 1998-12-04 2000-09-05 Advanced Micro Devices, Inc. Illumination modification scheme synthesis using lens characterization data
TWI256484B (en) * 2000-02-23 2006-07-01 Asml Netherlands Bv Method of measuring aberration in an optical imaging system
EP1128217B1 (en) 2000-02-23 2007-08-29 ASML Netherlands B.V. Method of measuring aberration in an optical imaging system
TW550377B (en) * 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
EP1164436A3 (en) 2000-06-14 2005-01-05 ASML Netherlands B.V. Operation of a lithographic projection apparatus
EP1246014A1 (en) * 2001-03-30 2002-10-02 ASML Netherlands B.V. Lithographic apparatus
JP4174660B2 (ja) 2000-12-28 2008-11-05 株式会社ニコン 露光方法及び装置、プログラム及び情報記録媒体、並びにデバイス製造方法
EP1251402B1 (en) 2001-03-30 2007-10-24 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method

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