KR100795140B1 - 리소그래피 투영장치 및 상기 리소그래피 투영장치를 사용하는 디바이스 제조방법 - Google Patents

리소그래피 투영장치 및 상기 리소그래피 투영장치를 사용하는 디바이스 제조방법 Download PDF

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KR100795140B1
KR100795140B1 KR1020050061270A KR20050061270A KR100795140B1 KR 100795140 B1 KR100795140 B1 KR 100795140B1 KR 1020050061270 A KR1020050061270 A KR 1020050061270A KR 20050061270 A KR20050061270 A KR 20050061270A KR 100795140 B1 KR100795140 B1 KR 100795140B1
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South Korea
Prior art keywords
image
projection system
aberration
aberrations
changes
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Expired - Fee Related
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Korean (ko)
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KR20060049927A (ko
Inventor
안드레 베르나르두스 요이닝크
무하베드 아크세이
요한네스 야코부스 마테우스 바젤만스
프란시스쿠스 안토니우스 크리소고누스 마리에 콤미사리스
디요크 렘코 마르첼 반
그루트 시몬 데
빔 테보 텔
데르 호프 알렉산더 헨드리쿠스 마르티누스 반
데 슈타트 아르노우트 반
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에이에스엠엘 네델란즈 비.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020050061270A 2004-07-08 2005-07-07 리소그래피 투영장치 및 상기 리소그래피 투영장치를 사용하는 디바이스 제조방법 Expired - Fee Related KR100795140B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/886,051 US7403264B2 (en) 2004-07-08 2004-07-08 Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
US10/886,051 2004-07-08

Publications (2)

Publication Number Publication Date
KR20060049927A KR20060049927A (ko) 2006-05-19
KR100795140B1 true KR100795140B1 (ko) 2008-01-17

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ID=35159780

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050061270A Expired - Fee Related KR100795140B1 (ko) 2004-07-08 2005-07-07 리소그래피 투영장치 및 상기 리소그래피 투영장치를 사용하는 디바이스 제조방법

Country Status (7)

Country Link
US (2) US7403264B2 (enExample)
EP (2) EP1975723A1 (enExample)
JP (1) JP4027382B2 (enExample)
KR (1) KR100795140B1 (enExample)
CN (1) CN100524041C (enExample)
DE (1) DE602005010014D1 (enExample)
TW (1) TWI266358B (enExample)

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KR20170051477A (ko) * 2014-09-01 2017-05-11 에이에스엠엘 네델란즈 비.브이. 타겟 구조체의 속성을 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
KR20180018805A (ko) * 2015-07-16 2018-02-21 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
KR20180018810A (ko) * 2015-07-20 2018-02-21 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치를 제어하는 방법, 리소그래피 장치 및 디바이스 제조 방법
KR20190089495A (ko) * 2018-01-23 2019-07-31 윤형열 패턴 형성 장치 및 방법

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US7403265B2 (en) 2005-03-30 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing data filtering
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US7643976B2 (en) 2006-02-28 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for identifying lens aberration sensitive patterns in an integrated circuit chip
CN100474115C (zh) 2006-04-04 2009-04-01 上海微电子装备有限公司 光刻机成像光学系统像差现场测量方法
US7583359B2 (en) * 2006-05-05 2009-09-01 Asml Netherlands B.V. Reduction of fit error due to non-uniform sample distribution
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
US8576377B2 (en) * 2006-12-28 2013-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7829249B2 (en) * 2007-03-05 2010-11-09 Asml Netherlands B.V. Device manufacturing method, computer program and lithographic apparatus
US8237913B2 (en) * 2007-05-08 2012-08-07 Asml Netherlands B.V. Lithographic apparatus and method
US20080278698A1 (en) * 2007-05-08 2008-11-13 Asml Netherlands B.V. Lithographic apparatus and method
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JP5264116B2 (ja) * 2007-07-26 2013-08-14 キヤノン株式会社 結像特性変動予測方法、露光装置、並びにデバイス製造方法
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DE102008042356A1 (de) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
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KR102074974B1 (ko) 2018-01-23 2020-02-07 윤형열 패턴 형성 장치 및 방법

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US20080252870A1 (en) 2008-10-16
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DE602005010014D1 (de) 2008-11-13
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