JP2005536827A5 - - Google Patents

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Publication number
JP2005536827A5
JP2005536827A5 JP2004531500A JP2004531500A JP2005536827A5 JP 2005536827 A5 JP2005536827 A5 JP 2005536827A5 JP 2004531500 A JP2004531500 A JP 2004531500A JP 2004531500 A JP2004531500 A JP 2004531500A JP 2005536827 A5 JP2005536827 A5 JP 2005536827A5
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JP
Japan
Prior art keywords
voltage
coupled
digit line
sensing
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004531500A
Other languages
English (en)
Japanese (ja)
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JP2005536827A (ja
Filing date
Publication date
Priority claimed from US10/233,871 external-priority patent/US6757202B2/en
Application filed filed Critical
Publication of JP2005536827A publication Critical patent/JP2005536827A/ja
Publication of JP2005536827A5 publication Critical patent/JP2005536827A5/ja
Pending legal-status Critical Current

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JP2004531500A 2002-08-29 2003-08-26 Ｄｒａｍセンス増幅器のバイアスセンシング Pending JP2005536827A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/233,871 US6757202B2 (en) 2002-08-29 2002-08-29 Bias sensing in DRAM sense amplifiers
PCT/US2003/026736 WO2004021354A1 (en) 2002-08-29 2003-08-26 Bias sensing in dram sense amplifiers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009186921A Division JP2009301700A (ja) 2002-08-29 2009-08-11 Ｄｒａｍセンス増幅器のバイアスセンシング

Publications (2)

Publication Number Publication Date
JP2005536827A JP2005536827A (ja) 2005-12-02
JP2005536827A5 true JP2005536827A5 (enExample) 2006-08-31

Family

ID=31977313

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004531500A Pending JP2005536827A (ja) 2002-08-29 2003-08-26 Ｄｒａｍセンス増幅器のバイアスセンシング
JP2009186921A Pending JP2009301700A (ja) 2002-08-29 2009-08-11 Ｄｒａｍセンス増幅器のバイアスセンシング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009186921A Pending JP2009301700A (ja) 2002-08-29 2009-08-11 Ｄｒａｍセンス増幅器のバイアスセンシング

Country Status (9)

Country Link
US (6) US6757202B2 (enExample)
EP (2) EP2309513B1 (enExample)
JP (2) JP2005536827A (enExample)
KR (2) KR100976830B1 (enExample)
CN (1) CN1685438B (enExample)
AU (1) AU2003260089A1 (enExample)
SG (1) SG153662A1 (enExample)
TW (1) TWI311319B (enExample)
WO (1) WO2004021354A1 (enExample)

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US20040257882A1 (en) * 2003-06-20 2004-12-23 Blaine Stackhouse Bias generation having adjustable range and resolution through metal programming
US8324872B2 (en) * 2004-03-26 2012-12-04 Marvell World Trade, Ltd. Voltage regulator with coupled inductors having high coefficient of coupling
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
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US7408813B2 (en) * 2006-08-03 2008-08-05 Micron Technology, Inc. Block erase for volatile memory
TWI381394B (zh) * 2008-06-09 2013-01-01 Promos Technologies Inc 動態隨機存取記憶體之資料感測方法
US8625372B2 (en) * 2008-12-24 2014-01-07 Stmicroelectronics International N.V. Noise tolerant sense circuit
US8164942B2 (en) * 2010-02-01 2012-04-24 International Business Machines Corporation High performance eDRAM sense amplifier
US9087559B2 (en) * 2012-12-27 2015-07-21 Intel Corporation Memory sense amplifier voltage modulation
US9053960B2 (en) * 2013-03-04 2015-06-09 Qualcomm Incorporated Decoupling capacitor for integrated circuit
US9294051B2 (en) * 2013-03-15 2016-03-22 Lattice Semiconductor Corporation Method and apparatus for implementing wide data range and wide common-mode receivers
US9224450B2 (en) * 2013-05-08 2015-12-29 International Business Machines Corporation Reference voltage modification in a memory device
US9245604B2 (en) 2013-05-08 2016-01-26 International Business Machines Corporation Prioritizing refreshes in a memory device
US9318187B2 (en) * 2013-07-23 2016-04-19 Micron Technology, Inc. Method and apparatus for sensing in a memory
US9378781B1 (en) 2015-04-09 2016-06-28 Qualcomm Incorporated System, apparatus, and method for sense amplifiers
US9378780B1 (en) 2015-06-16 2016-06-28 National Tsing Hua University Sense amplifier
US10395697B1 (en) * 2018-02-08 2019-08-27 Micron Technology, Inc. Self-referencing sensing schemes with coupling capacitance
DE102018202871B4 (de) * 2018-02-26 2019-09-12 Dialog Semiconductor (Uk) Limited Leistungseffiziente Treiberschaltung, die Ladungsrückgewinnung nutzt, und Verfahren zum Ansteuern einer Last
US10699755B2 (en) * 2018-09-18 2020-06-30 Micron Technology, Inc. Apparatuses and methods for plate coupled sense amplifiers
US11727980B2 (en) * 2021-03-30 2023-08-15 Micron Technology, Inc. Apparatuses and methods for single-ended global and local input/output architecture

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