JPH0377595B2 - - Google Patents

Info

Publication number
JPH0377595B2
JPH0377595B2 JP56131980A JP13198081A JPH0377595B2 JP H0377595 B2 JPH0377595 B2 JP H0377595B2 JP 56131980 A JP56131980 A JP 56131980A JP 13198081 A JP13198081 A JP 13198081A JP H0377595 B2 JPH0377595 B2 JP H0377595B2
Authority
JP
Japan
Prior art keywords
word line
memory
electrode
gate
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56131980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5832296A (ja
Inventor
Kazuyasu Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56131980A priority Critical patent/JPS5832296A/ja
Publication of JPS5832296A publication Critical patent/JPS5832296A/ja
Publication of JPH0377595B2 publication Critical patent/JPH0377595B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP56131980A 1981-08-20 1981-08-20 Mosダイナミツクメモリ Granted JPS5832296A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56131980A JPS5832296A (ja) 1981-08-20 1981-08-20 Mosダイナミツクメモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56131980A JPS5832296A (ja) 1981-08-20 1981-08-20 Mosダイナミツクメモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2285441A Division JPH0612625B2 (ja) 1990-10-22 1990-10-22 Mosダイナミックメモリ

Publications (2)

Publication Number Publication Date
JPS5832296A JPS5832296A (ja) 1983-02-25
JPH0377595B2 true JPH0377595B2 (enExample) 1991-12-11

Family

ID=15070726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56131980A Granted JPS5832296A (ja) 1981-08-20 1981-08-20 Mosダイナミツクメモリ

Country Status (1)

Country Link
JP (1) JPS5832296A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612625B2 (ja) * 1990-10-22 1994-02-16 三菱電機株式会社 Mosダイナミックメモリ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032981B2 (ja) * 1977-04-04 1985-07-31 日本電気株式会社 2進記憶装置
JPS5690A (en) * 1979-06-15 1981-01-06 Mitsubishi Electric Corp Random access memory
JPS5641593A (en) * 1979-09-11 1981-04-18 Nec Corp Semiconductor memory unit

Also Published As

Publication number Publication date
JPS5832296A (ja) 1983-02-25

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