TWI311319B - Dram,apparatus,method and system for bias sensing in dram sense amplifiers - Google Patents

Dram,apparatus,method and system for bias sensing in dram sense amplifiers Download PDF

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Publication number
TWI311319B
TWI311319B TW092123964A TW92123964A TWI311319B TW I311319 B TWI311319 B TW I311319B TW 092123964 A TW092123964 A TW 092123964A TW 92123964 A TW92123964 A TW 92123964A TW I311319 B TWI311319 B TW I311319B
Authority
TW
Taiwan
Prior art keywords
voltage
connection
digit line
coupled
sense
Prior art date
Application number
TW092123964A
Other languages
English (en)
Chinese (zh)
Other versions
TW200426836A (en
Inventor
J Mcelroy David
L Casper Stephen
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200426836A publication Critical patent/TW200426836A/zh
Application granted granted Critical
Publication of TWI311319B publication Critical patent/TWI311319B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW092123964A 2002-08-29 2003-08-29 Dram,apparatus,method and system for bias sensing in dram sense amplifiers TWI311319B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/233,871 US6757202B2 (en) 2002-08-29 2002-08-29 Bias sensing in DRAM sense amplifiers

Publications (2)

Publication Number Publication Date
TW200426836A TW200426836A (en) 2004-12-01
TWI311319B true TWI311319B (en) 2009-06-21

Family

ID=31977313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092123964A TWI311319B (en) 2002-08-29 2003-08-29 Dram,apparatus,method and system for bias sensing in dram sense amplifiers

Country Status (9)

Country Link
US (6) US6757202B2 (enExample)
EP (2) EP2309513B1 (enExample)
JP (2) JP2005536827A (enExample)
KR (2) KR100939054B1 (enExample)
CN (1) CN1685438B (enExample)
AU (1) AU2003260089A1 (enExample)
SG (1) SG153662A1 (enExample)
TW (1) TWI311319B (enExample)
WO (1) WO2004021354A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI588838B (zh) * 2013-03-15 2017-06-21 萊迪思半導體公司 用於實現寬資料範圍與寬共模接收器之方法及設備

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US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
US20040257882A1 (en) * 2003-06-20 2004-12-23 Blaine Stackhouse Bias generation having adjustable range and resolution through metal programming
US8324872B2 (en) * 2004-03-26 2012-12-04 Marvell World Trade, Ltd. Voltage regulator with coupled inductors having high coefficient of coupling
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
KR100869541B1 (ko) * 2006-05-26 2008-11-19 삼성전자주식회사 오픈 비트라인 구조의 메모리 장치 및 이 장치의 비트라인데이터 센싱 방법
US7408813B2 (en) * 2006-08-03 2008-08-05 Micron Technology, Inc. Block erase for volatile memory
TWI381394B (zh) * 2008-06-09 2013-01-01 Promos Technologies Inc 動態隨機存取記憶體之資料感測方法
US8625372B2 (en) 2008-12-24 2014-01-07 Stmicroelectronics International N.V. Noise tolerant sense circuit
US8164942B2 (en) * 2010-02-01 2012-04-24 International Business Machines Corporation High performance eDRAM sense amplifier
US9087559B2 (en) * 2012-12-27 2015-07-21 Intel Corporation Memory sense amplifier voltage modulation
US9053960B2 (en) * 2013-03-04 2015-06-09 Qualcomm Incorporated Decoupling capacitor for integrated circuit
US9245604B2 (en) 2013-05-08 2016-01-26 International Business Machines Corporation Prioritizing refreshes in a memory device
US9224450B2 (en) * 2013-05-08 2015-12-29 International Business Machines Corporation Reference voltage modification in a memory device
US9318187B2 (en) * 2013-07-23 2016-04-19 Micron Technology, Inc. Method and apparatus for sensing in a memory
US9378781B1 (en) 2015-04-09 2016-06-28 Qualcomm Incorporated System, apparatus, and method for sense amplifiers
US9378780B1 (en) 2015-06-16 2016-06-28 National Tsing Hua University Sense amplifier
US10395697B1 (en) * 2018-02-08 2019-08-27 Micron Technology, Inc. Self-referencing sensing schemes with coupling capacitance
DE102018202871B4 (de) * 2018-02-26 2019-09-12 Dialog Semiconductor (Uk) Limited Leistungseffiziente Treiberschaltung, die Ladungsrückgewinnung nutzt, und Verfahren zum Ansteuern einer Last
US10699755B2 (en) * 2018-09-18 2020-06-30 Micron Technology, Inc. Apparatuses and methods for plate coupled sense amplifiers
US11727980B2 (en) * 2021-03-30 2023-08-15 Micron Technology, Inc. Apparatuses and methods for single-ended global and local input/output architecture

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US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI588838B (zh) * 2013-03-15 2017-06-21 萊迪思半導體公司 用於實現寬資料範圍與寬共模接收器之方法及設備

Also Published As

Publication number Publication date
EP1540655B1 (en) 2019-07-03
KR100976830B1 (ko) 2010-08-20
US20040042276A1 (en) 2004-03-04
JP2005536827A (ja) 2005-12-02
US20090323448A1 (en) 2009-12-31
US20040228195A1 (en) 2004-11-18
KR20080083215A (ko) 2008-09-16
US6757202B2 (en) 2004-06-29
EP2309513B1 (en) 2019-07-10
EP2309513A2 (en) 2011-04-13
US7903488B2 (en) 2011-03-08
AU2003260089A1 (en) 2004-03-19
US9633714B2 (en) 2017-04-25
EP1540655A1 (en) 2005-06-15
TW200426836A (en) 2004-12-01
US20110157962A1 (en) 2011-06-30
US20140307516A1 (en) 2014-10-16
EP2309513A3 (en) 2011-05-25
US8767496B2 (en) 2014-07-01
KR100939054B1 (ko) 2010-01-28
KR20070089894A (ko) 2007-09-04
US20060280011A1 (en) 2006-12-14
US7072235B2 (en) 2006-07-04
JP2009301700A (ja) 2009-12-24
WO2004021354A1 (en) 2004-03-11
SG153662A1 (en) 2009-07-29
CN1685438A (zh) 2005-10-19
CN1685438B (zh) 2011-11-16
US7567477B2 (en) 2009-07-28

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