CN1685438B - 对dram感测操作中阈值电压进行偏置的装置及方法 - Google Patents

对dram感测操作中阈值电压进行偏置的装置及方法 Download PDF

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Publication number
CN1685438B
CN1685438B CN038226332A CN03822633A CN1685438B CN 1685438 B CN1685438 B CN 1685438B CN 038226332 A CN038226332 A CN 038226332A CN 03822633 A CN03822633 A CN 03822633A CN 1685438 B CN1685438 B CN 1685438B
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China
Prior art keywords
voltage
sense
digit line
decoupling
coupling
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Expired - Lifetime
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CN038226332A
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English (en)
Chinese (zh)
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CN1685438A (zh
Inventor
戴维·J.·麦克艾洛伊
斯蒂芬·L.·卡斯伯
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Micron Technology Inc
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Micron Technology Inc
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Publication of CN1685438A publication Critical patent/CN1685438A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
CN038226332A 2002-08-29 2003-08-26 对dram感测操作中阈值电压进行偏置的装置及方法 Expired - Lifetime CN1685438B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/233,871 US6757202B2 (en) 2002-08-29 2002-08-29 Bias sensing in DRAM sense amplifiers
US10/233,871 2002-08-29
PCT/US2003/026736 WO2004021354A1 (en) 2002-08-29 2003-08-26 Bias sensing in dram sense amplifiers

Publications (2)

Publication Number Publication Date
CN1685438A CN1685438A (zh) 2005-10-19
CN1685438B true CN1685438B (zh) 2011-11-16

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CN038226332A Expired - Lifetime CN1685438B (zh) 2002-08-29 2003-08-26 对dram感测操作中阈值电压进行偏置的装置及方法

Country Status (9)

Country Link
US (6) US6757202B2 (enExample)
EP (2) EP2309513B1 (enExample)
JP (2) JP2005536827A (enExample)
KR (2) KR100939054B1 (enExample)
CN (1) CN1685438B (enExample)
AU (1) AU2003260089A1 (enExample)
SG (1) SG153662A1 (enExample)
TW (1) TWI311319B (enExample)
WO (1) WO2004021354A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6978088B2 (en) * 2002-08-27 2005-12-20 Pentax Corporation Optical element retracting mechanism for a retractable lens
US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
US20040257882A1 (en) * 2003-06-20 2004-12-23 Blaine Stackhouse Bias generation having adjustable range and resolution through metal programming
US8324872B2 (en) * 2004-03-26 2012-12-04 Marvell World Trade, Ltd. Voltage regulator with coupled inductors having high coefficient of coupling
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
KR100869541B1 (ko) * 2006-05-26 2008-11-19 삼성전자주식회사 오픈 비트라인 구조의 메모리 장치 및 이 장치의 비트라인데이터 센싱 방법
US7408813B2 (en) * 2006-08-03 2008-08-05 Micron Technology, Inc. Block erase for volatile memory
TWI381394B (zh) * 2008-06-09 2013-01-01 Promos Technologies Inc 動態隨機存取記憶體之資料感測方法
US8625372B2 (en) 2008-12-24 2014-01-07 Stmicroelectronics International N.V. Noise tolerant sense circuit
US8164942B2 (en) * 2010-02-01 2012-04-24 International Business Machines Corporation High performance eDRAM sense amplifier
US9087559B2 (en) * 2012-12-27 2015-07-21 Intel Corporation Memory sense amplifier voltage modulation
US9053960B2 (en) * 2013-03-04 2015-06-09 Qualcomm Incorporated Decoupling capacitor for integrated circuit
WO2014151659A1 (en) * 2013-03-15 2014-09-25 Silicon Image, Inc. Method and apparatus for implementing wide data range and wide common-mode receivers
US9245604B2 (en) 2013-05-08 2016-01-26 International Business Machines Corporation Prioritizing refreshes in a memory device
US9224450B2 (en) * 2013-05-08 2015-12-29 International Business Machines Corporation Reference voltage modification in a memory device
US9318187B2 (en) * 2013-07-23 2016-04-19 Micron Technology, Inc. Method and apparatus for sensing in a memory
US9378781B1 (en) 2015-04-09 2016-06-28 Qualcomm Incorporated System, apparatus, and method for sense amplifiers
US9378780B1 (en) 2015-06-16 2016-06-28 National Tsing Hua University Sense amplifier
US10395697B1 (en) * 2018-02-08 2019-08-27 Micron Technology, Inc. Self-referencing sensing schemes with coupling capacitance
DE102018202871B4 (de) * 2018-02-26 2019-09-12 Dialog Semiconductor (Uk) Limited Leistungseffiziente Treiberschaltung, die Ladungsrückgewinnung nutzt, und Verfahren zum Ansteuern einer Last
US10699755B2 (en) * 2018-09-18 2020-06-30 Micron Technology, Inc. Apparatuses and methods for plate coupled sense amplifiers
US11727980B2 (en) * 2021-03-30 2023-08-15 Micron Technology, Inc. Apparatuses and methods for single-ended global and local input/output architecture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1136207A (zh) * 1995-01-05 1996-11-20 株式会社东芝 半导体存储器
US5701268A (en) * 1995-08-23 1997-12-23 Samsung Electronics Co., Ltd. Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same
US20020080664A1 (en) * 2000-12-25 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4625300A (en) * 1982-12-01 1986-11-25 Texas Instruments Incorporated Single-ended sense amplifier for dynamic memory array
JPS60236191A (ja) 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPS61217986A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd ダイナミツク型ｒａｍ
JPS63282993A (ja) * 1987-05-15 1988-11-18 Mitsubishi Electric Corp 半導体ダイナミック・ランダム・アクセス・メモリ
JPS63282994A (ja) * 1987-05-15 1988-11-18 Mitsubishi Electric Corp 半導体ダイナミック・ランダム・アクセス・メモリ
JPH0758592B2 (ja) * 1987-11-30 1995-06-21 日本電気株式会社 半導体メモリ
JPH03296989A (ja) * 1990-04-16 1991-12-27 Nec Corp ダイナミック型センスアンプ
US5157634A (en) 1990-10-23 1992-10-20 International Business Machines Corporation Dram having extended refresh time
JP2817552B2 (ja) * 1992-01-30 1998-10-30 日本電気株式会社 半導体メモリ装置
JPH05210975A (ja) * 1992-01-30 1993-08-20 Nec Corp ダイナミックｒａｍ
US5291437A (en) 1992-06-25 1994-03-01 Texas Instruments Incorporated Shared dummy cell
JP3272193B2 (ja) * 1995-06-12 2002-04-08 株式会社東芝 半導体装置およびその動作方法
KR100214462B1 (ko) 1995-11-27 1999-08-02 구본준 반도체메모리셀의 라이트 방법
JP3824370B2 (ja) * 1997-03-03 2006-09-20 富士通株式会社 半導体装置
JP3296989B2 (ja) 1997-03-31 2002-07-02 ユニ・チャーム株式会社 水解性シート及びその製造方法
JPH10302469A (ja) * 1997-04-25 1998-11-13 Fujitsu Ltd 半導体記憶装置
JPH1144292A (ja) 1997-07-25 1999-02-16 Ishikawajima Harima Heavy Ind Co Ltd 訓練シミュレータのポンプモデル
DE19735137C1 (de) 1997-08-13 1998-10-01 Siemens Ag Schaltungsvorrichtung für die Bewertung des Dateninhalts von Speicherzellen
US5995421A (en) * 1998-05-29 1999-11-30 Stmicroelectronics, Inc. Circuit and method for reading a memory cell
JP2000057772A (ja) 1998-08-12 2000-02-25 Nec Corp 半導体記憶装置
JP2000187985A (ja) 1998-12-24 2000-07-04 Hitachi Ltd 半導体記憶装置
US6157578A (en) * 1999-07-15 2000-12-05 Stmicroelectronics, Inc. Method and apparatus for accessing a memory device
JP2001351383A (ja) * 2000-06-07 2001-12-21 Mitsubishi Electric Corp 半導体集積回路装置
FR2810782B1 (fr) * 2000-06-26 2002-10-04 St Microelectronics Sa Procede de commande d'un acces en lesture d'une memoire vive dynamique et memoire correspondante
KR100393224B1 (ko) * 2001-06-30 2003-07-31 삼성전자주식회사 비트라인 쌍들의 부하를 차단하는 회로를 구비하는 반도체메모리장치
US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
US6862208B2 (en) * 2003-04-11 2005-03-01 Freescale Semiconductor, Inc. Memory device with sense amplifier and self-timed latch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1136207A (zh) * 1995-01-05 1996-11-20 株式会社东芝 半导体存储器
US5701268A (en) * 1995-08-23 1997-12-23 Samsung Electronics Co., Ltd. Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same
US20020080664A1 (en) * 2000-12-25 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
EP1540655B1 (en) 2019-07-03
KR100976830B1 (ko) 2010-08-20
US20040042276A1 (en) 2004-03-04
JP2005536827A (ja) 2005-12-02
US20090323448A1 (en) 2009-12-31
US20040228195A1 (en) 2004-11-18
KR20080083215A (ko) 2008-09-16
US6757202B2 (en) 2004-06-29
EP2309513B1 (en) 2019-07-10
EP2309513A2 (en) 2011-04-13
US7903488B2 (en) 2011-03-08
AU2003260089A1 (en) 2004-03-19
TWI311319B (en) 2009-06-21
US9633714B2 (en) 2017-04-25
EP1540655A1 (en) 2005-06-15
TW200426836A (en) 2004-12-01
US20110157962A1 (en) 2011-06-30
US20140307516A1 (en) 2014-10-16
EP2309513A3 (en) 2011-05-25
US8767496B2 (en) 2014-07-01
KR100939054B1 (ko) 2010-01-28
KR20070089894A (ko) 2007-09-04
US20060280011A1 (en) 2006-12-14
US7072235B2 (en) 2006-07-04
JP2009301700A (ja) 2009-12-24
WO2004021354A1 (en) 2004-03-11
SG153662A1 (en) 2009-07-29
CN1685438A (zh) 2005-10-19
US7567477B2 (en) 2009-07-28

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