JP2005536827A - Ｄｒａｍセンス増幅器のバイアスセンシング - Google Patents

Ｄｒａｍセンス増幅器のバイアスセンシング Download PDF

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Publication number
JP2005536827A
JP2005536827A JP2004531500A JP2004531500A JP2005536827A JP 2005536827 A JP2005536827 A JP 2005536827A JP 2004531500 A JP2004531500 A JP 2004531500A JP 2004531500 A JP2004531500 A JP 2004531500A JP 2005536827 A JP2005536827 A JP 2005536827A
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JP
Japan
Prior art keywords
voltage
digit line
coupled
dram
sensing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2004531500A
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English (en)
Japanese (ja)
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JP2005536827A5 (enExample
Inventor
デービッド ジェイ． マクエルロイ，
ステファン エル． キャスパー，
Original Assignee
マイクロン テクノロジー，インコーポレイティド
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Application filed by マイクロン テクノロジー，インコーポレイティド filed Critical マイクロン テクノロジー，インコーポレイティド
Publication of JP2005536827A publication Critical patent/JP2005536827A/ja
Publication of JP2005536827A5 publication Critical patent/JP2005536827A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2004531500A 2002-08-29 2003-08-26 Ｄｒａｍセンス増幅器のバイアスセンシング Pending JP2005536827A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/233,871 US6757202B2 (en) 2002-08-29 2002-08-29 Bias sensing in DRAM sense amplifiers
PCT/US2003/026736 WO2004021354A1 (en) 2002-08-29 2003-08-26 Bias sensing in dram sense amplifiers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009186921A Division JP2009301700A (ja) 2002-08-29 2009-08-11 Ｄｒａｍセンス増幅器のバイアスセンシング

Publications (2)

Publication Number Publication Date
JP2005536827A true JP2005536827A (ja) 2005-12-02
JP2005536827A5 JP2005536827A5 (enExample) 2006-08-31

Family

ID=31977313

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004531500A Pending JP2005536827A (ja) 2002-08-29 2003-08-26 Ｄｒａｍセンス増幅器のバイアスセンシング
JP2009186921A Pending JP2009301700A (ja) 2002-08-29 2009-08-11 Ｄｒａｍセンス増幅器のバイアスセンシング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009186921A Pending JP2009301700A (ja) 2002-08-29 2009-08-11 Ｄｒａｍセンス増幅器のバイアスセンシング

Country Status (9)

Country Link
US (6) US6757202B2 (enExample)
EP (2) EP2309513B1 (enExample)
JP (2) JP2005536827A (enExample)
KR (2) KR100939054B1 (enExample)
CN (1) CN1685438B (enExample)
AU (1) AU2003260089A1 (enExample)
SG (1) SG153662A1 (enExample)
TW (1) TWI311319B (enExample)
WO (1) WO2004021354A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021508909A (ja) * 2018-02-08 2021-03-11 マイクロン テクノロジー，インク． 結合容量を用いた自己参照センシング・スキーム

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US6978088B2 (en) * 2002-08-27 2005-12-20 Pentax Corporation Optical element retracting mechanism for a retractable lens
US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
US20040257882A1 (en) * 2003-06-20 2004-12-23 Blaine Stackhouse Bias generation having adjustable range and resolution through metal programming
US8324872B2 (en) * 2004-03-26 2012-12-04 Marvell World Trade, Ltd. Voltage regulator with coupled inductors having high coefficient of coupling
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
KR100869541B1 (ko) * 2006-05-26 2008-11-19 삼성전자주식회사 오픈 비트라인 구조의 메모리 장치 및 이 장치의 비트라인데이터 센싱 방법
US7408813B2 (en) * 2006-08-03 2008-08-05 Micron Technology, Inc. Block erase for volatile memory
TWI381394B (zh) * 2008-06-09 2013-01-01 Promos Technologies Inc 動態隨機存取記憶體之資料感測方法
US8625372B2 (en) 2008-12-24 2014-01-07 Stmicroelectronics International N.V. Noise tolerant sense circuit
US8164942B2 (en) * 2010-02-01 2012-04-24 International Business Machines Corporation High performance eDRAM sense amplifier
US9087559B2 (en) * 2012-12-27 2015-07-21 Intel Corporation Memory sense amplifier voltage modulation
US9053960B2 (en) * 2013-03-04 2015-06-09 Qualcomm Incorporated Decoupling capacitor for integrated circuit
WO2014151659A1 (en) * 2013-03-15 2014-09-25 Silicon Image, Inc. Method and apparatus for implementing wide data range and wide common-mode receivers
US9245604B2 (en) 2013-05-08 2016-01-26 International Business Machines Corporation Prioritizing refreshes in a memory device
US9224450B2 (en) * 2013-05-08 2015-12-29 International Business Machines Corporation Reference voltage modification in a memory device
US9318187B2 (en) * 2013-07-23 2016-04-19 Micron Technology, Inc. Method and apparatus for sensing in a memory
US9378781B1 (en) 2015-04-09 2016-06-28 Qualcomm Incorporated System, apparatus, and method for sense amplifiers
US9378780B1 (en) 2015-06-16 2016-06-28 National Tsing Hua University Sense amplifier
DE102018202871B4 (de) * 2018-02-26 2019-09-12 Dialog Semiconductor (Uk) Limited Leistungseffiziente Treiberschaltung, die Ladungsrückgewinnung nutzt, und Verfahren zum Ansteuern einer Last
US10699755B2 (en) * 2018-09-18 2020-06-30 Micron Technology, Inc. Apparatuses and methods for plate coupled sense amplifiers
US11727980B2 (en) * 2021-03-30 2023-08-15 Micron Technology, Inc. Apparatuses and methods for single-ended global and local input/output architecture

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JPS61217986A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd ダイナミツク型ｒａｍ
JPH01144292A (ja) * 1987-11-30 1989-06-06 Nec Corp 半導体メモリ
JPH03296989A (ja) * 1990-04-16 1991-12-27 Nec Corp ダイナミック型センスアンプ
JPH05210975A (ja) * 1992-01-30 1993-08-20 Nec Corp ダイナミックｒａｍ
JPH05274878A (ja) * 1992-01-30 1993-10-22 Nec Corp 半導体メモリ装置
JPH09171687A (ja) * 1995-08-23 1997-06-30 Samsung Electron Co Ltd 半導体メモリ装置のデータセンシング回路
JPH10241357A (ja) * 1997-03-03 1998-09-11 Fujitsu Ltd 半導体装置
JP2000187985A (ja) * 1998-12-24 2000-07-04 Hitachi Ltd 半導体記憶装置

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JP3315293B2 (ja) * 1995-01-05 2002-08-19 株式会社東芝 半導体記憶装置
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JPH10302469A (ja) * 1997-04-25 1998-11-13 Fujitsu Ltd 半導体記憶装置
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JPS61217986A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd ダイナミツク型ｒａｍ
JPH01144292A (ja) * 1987-11-30 1989-06-06 Nec Corp 半導体メモリ
JPH03296989A (ja) * 1990-04-16 1991-12-27 Nec Corp ダイナミック型センスアンプ
JPH05210975A (ja) * 1992-01-30 1993-08-20 Nec Corp ダイナミックｒａｍ
JPH05274878A (ja) * 1992-01-30 1993-10-22 Nec Corp 半導体メモリ装置
JPH09171687A (ja) * 1995-08-23 1997-06-30 Samsung Electron Co Ltd 半導体メモリ装置のデータセンシング回路
JPH10241357A (ja) * 1997-03-03 1998-09-11 Fujitsu Ltd 半導体装置
JP2000187985A (ja) * 1998-12-24 2000-07-04 Hitachi Ltd 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021508909A (ja) * 2018-02-08 2021-03-11 マイクロン テクノロジー，インク． 結合容量を用いた自己参照センシング・スキーム

Also Published As

Publication number Publication date
EP1540655B1 (en) 2019-07-03
KR100976830B1 (ko) 2010-08-20
US20040042276A1 (en) 2004-03-04
US20090323448A1 (en) 2009-12-31
US20040228195A1 (en) 2004-11-18
KR20080083215A (ko) 2008-09-16
US6757202B2 (en) 2004-06-29
EP2309513B1 (en) 2019-07-10
EP2309513A2 (en) 2011-04-13
US7903488B2 (en) 2011-03-08
AU2003260089A1 (en) 2004-03-19
TWI311319B (en) 2009-06-21
US9633714B2 (en) 2017-04-25
EP1540655A1 (en) 2005-06-15
TW200426836A (en) 2004-12-01
US20110157962A1 (en) 2011-06-30
US20140307516A1 (en) 2014-10-16
EP2309513A3 (en) 2011-05-25
US8767496B2 (en) 2014-07-01
KR100939054B1 (ko) 2010-01-28
KR20070089894A (ko) 2007-09-04
US20060280011A1 (en) 2006-12-14
US7072235B2 (en) 2006-07-04
JP2009301700A (ja) 2009-12-24
WO2004021354A1 (en) 2004-03-11
SG153662A1 (en) 2009-07-29
CN1685438A (zh) 2005-10-19
CN1685438B (zh) 2011-11-16
US7567477B2 (en) 2009-07-28

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