KR100976830B1 - Ｄｒａｍ 센스 증폭기의 바이어스 센싱 - Google Patents

Ｄｒａｍ 센스 증폭기의 바이어스 센싱 Download PDF

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Publication number
KR100976830B1
KR100976830B1 KR1020057003148A KR20057003148A KR100976830B1 KR 100976830 B1 KR100976830 B1 KR 100976830B1 KR 1020057003148 A KR1020057003148 A KR 1020057003148A KR 20057003148 A KR20057003148 A KR 20057003148A KR 100976830 B1 KR100976830 B1 KR 100976830B1
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KR
South Korea
Prior art keywords
voltage
digit line
coupled
coupling
memory cell
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Expired - Lifetime
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KR1020057003148A
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English (en)
Korean (ko)
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KR20070089894A (ko
Inventor
데이비드 제이 맥엘로이
스티븐 엘 캐스퍼
Original Assignee
마이크론 테크놀로지 인코포레이티드
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Publication of KR20070089894A publication Critical patent/KR20070089894A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1020057003148A 2002-08-29 2003-08-26 Ｄｒａｍ 센스 증폭기의 바이어스 센싱 Expired - Lifetime KR100976830B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/233,871 US6757202B2 (en) 2002-08-29 2002-08-29 Bias sensing in DRAM sense amplifiers
US10/233,871 2002-08-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020087020886A Division KR100939054B1 (ko) 2002-08-29 2003-08-26 Ｄｒａｍ 센스 증폭기의 바이어스 센싱

Publications (2)

Publication Number Publication Date
KR20070089894A KR20070089894A (ko) 2007-09-04
KR100976830B1 true KR100976830B1 (ko) 2010-08-20

Family

ID=31977313

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087020886A Expired - Lifetime KR100939054B1 (ko) 2002-08-29 2003-08-26 Ｄｒａｍ 센스 증폭기의 바이어스 센싱
KR1020057003148A Expired - Lifetime KR100976830B1 (ko) 2002-08-29 2003-08-26 Ｄｒａｍ 센스 증폭기의 바이어스 센싱

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020087020886A Expired - Lifetime KR100939054B1 (ko) 2002-08-29 2003-08-26 Ｄｒａｍ 센스 증폭기의 바이어스 센싱

Country Status (9)

Country Link
US (6) US6757202B2 (enExample)
EP (2) EP2309513B1 (enExample)
JP (2) JP2005536827A (enExample)
KR (2) KR100939054B1 (enExample)
CN (1) CN1685438B (enExample)
AU (1) AU2003260089A1 (enExample)
SG (1) SG153662A1 (enExample)
TW (1) TWI311319B (enExample)
WO (1) WO2004021354A1 (enExample)

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US6978088B2 (en) * 2002-08-27 2005-12-20 Pentax Corporation Optical element retracting mechanism for a retractable lens
US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
US20040257882A1 (en) * 2003-06-20 2004-12-23 Blaine Stackhouse Bias generation having adjustable range and resolution through metal programming
US8324872B2 (en) * 2004-03-26 2012-12-04 Marvell World Trade, Ltd. Voltage regulator with coupled inductors having high coefficient of coupling
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
KR100869541B1 (ko) * 2006-05-26 2008-11-19 삼성전자주식회사 오픈 비트라인 구조의 메모리 장치 및 이 장치의 비트라인데이터 센싱 방법
US7408813B2 (en) * 2006-08-03 2008-08-05 Micron Technology, Inc. Block erase for volatile memory
TWI381394B (zh) * 2008-06-09 2013-01-01 Promos Technologies Inc 動態隨機存取記憶體之資料感測方法
US8625372B2 (en) 2008-12-24 2014-01-07 Stmicroelectronics International N.V. Noise tolerant sense circuit
US8164942B2 (en) * 2010-02-01 2012-04-24 International Business Machines Corporation High performance eDRAM sense amplifier
US9087559B2 (en) * 2012-12-27 2015-07-21 Intel Corporation Memory sense amplifier voltage modulation
US9053960B2 (en) * 2013-03-04 2015-06-09 Qualcomm Incorporated Decoupling capacitor for integrated circuit
WO2014151659A1 (en) * 2013-03-15 2014-09-25 Silicon Image, Inc. Method and apparatus for implementing wide data range and wide common-mode receivers
US9245604B2 (en) 2013-05-08 2016-01-26 International Business Machines Corporation Prioritizing refreshes in a memory device
US9224450B2 (en) * 2013-05-08 2015-12-29 International Business Machines Corporation Reference voltage modification in a memory device
US9318187B2 (en) * 2013-07-23 2016-04-19 Micron Technology, Inc. Method and apparatus for sensing in a memory
US9378781B1 (en) 2015-04-09 2016-06-28 Qualcomm Incorporated System, apparatus, and method for sense amplifiers
US9378780B1 (en) 2015-06-16 2016-06-28 National Tsing Hua University Sense amplifier
US10395697B1 (en) * 2018-02-08 2019-08-27 Micron Technology, Inc. Self-referencing sensing schemes with coupling capacitance
DE102018202871B4 (de) * 2018-02-26 2019-09-12 Dialog Semiconductor (Uk) Limited Leistungseffiziente Treiberschaltung, die Ladungsrückgewinnung nutzt, und Verfahren zum Ansteuern einer Last
US10699755B2 (en) * 2018-09-18 2020-06-30 Micron Technology, Inc. Apparatuses and methods for plate coupled sense amplifiers
US11727980B2 (en) * 2021-03-30 2023-08-15 Micron Technology, Inc. Apparatuses and methods for single-ended global and local input/output architecture

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KR0177776B1 (ko) * 1995-08-23 1999-04-15 김광호 고집적 반도체 메모리 장치의 데이타 센싱회로
US20020009008A1 (en) 2000-06-26 2002-01-24 Stmicroelectronics S.A. Process for controlling a read access for a dynamic random access memory and corresponding memory
US20020080664A1 (en) 2000-12-25 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor device

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JPS60236191A (ja) 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPS61217986A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd ダイナミツク型ｒａｍ
JPS63282993A (ja) * 1987-05-15 1988-11-18 Mitsubishi Electric Corp 半導体ダイナミック・ランダム・アクセス・メモリ
JPS63282994A (ja) * 1987-05-15 1988-11-18 Mitsubishi Electric Corp 半導体ダイナミック・ランダム・アクセス・メモリ
JPH0758592B2 (ja) * 1987-11-30 1995-06-21 日本電気株式会社 半導体メモリ
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US20020080664A1 (en) 2000-12-25 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
EP1540655B1 (en) 2019-07-03
US20040042276A1 (en) 2004-03-04
JP2005536827A (ja) 2005-12-02
US20090323448A1 (en) 2009-12-31
US20040228195A1 (en) 2004-11-18
KR20080083215A (ko) 2008-09-16
US6757202B2 (en) 2004-06-29
EP2309513B1 (en) 2019-07-10
EP2309513A2 (en) 2011-04-13
US7903488B2 (en) 2011-03-08
AU2003260089A1 (en) 2004-03-19
TWI311319B (en) 2009-06-21
US9633714B2 (en) 2017-04-25
EP1540655A1 (en) 2005-06-15
TW200426836A (en) 2004-12-01
US20110157962A1 (en) 2011-06-30
US20140307516A1 (en) 2014-10-16
EP2309513A3 (en) 2011-05-25
US8767496B2 (en) 2014-07-01
KR100939054B1 (ko) 2010-01-28
KR20070089894A (ko) 2007-09-04
US20060280011A1 (en) 2006-12-14
US7072235B2 (en) 2006-07-04
JP2009301700A (ja) 2009-12-24
WO2004021354A1 (en) 2004-03-11
SG153662A1 (en) 2009-07-29
CN1685438A (zh) 2005-10-19
CN1685438B (zh) 2011-11-16
US7567477B2 (en) 2009-07-28

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