JP2006054017A5 - - Google Patents

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Publication number
JP2006054017A5
JP2006054017A5 JP2004236245A JP2004236245A JP2006054017A5 JP 2006054017 A5 JP2006054017 A5 JP 2006054017A5 JP 2004236245 A JP2004236245 A JP 2004236245A JP 2004236245 A JP2004236245 A JP 2004236245A JP 2006054017 A5 JP2006054017 A5 JP 2006054017A5
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JP
Japan
Prior art keywords
voltage
terminal
capacitor
voltage source
constant voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004236245A
Other languages
English (en)
Japanese (ja)
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JP2006054017A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004236245A priority Critical patent/JP2006054017A/ja
Priority claimed from JP2004236245A external-priority patent/JP2006054017A/ja
Priority to US10/958,936 priority patent/US7177213B2/en
Publication of JP2006054017A publication Critical patent/JP2006054017A/ja
Priority to US11/642,810 priority patent/US7423923B2/en
Publication of JP2006054017A5 publication Critical patent/JP2006054017A5/ja
Priority to US12/228,459 priority patent/US7663952B2/en
Pending legal-status Critical Current

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JP2004236245A 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ Pending JP2006054017A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004236245A JP2006054017A (ja) 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ
US10/958,936 US7177213B2 (en) 2004-08-13 2004-10-05 Capacitor supported precharging of memory digit lines
US11/642,810 US7423923B2 (en) 2004-08-13 2006-12-19 Capacitor supported precharging of memory digit lines
US12/228,459 US7663952B2 (en) 2004-08-13 2008-08-12 Capacitor supported precharging of memory digit lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004236245A JP2006054017A (ja) 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ

Publications (2)

Publication Number Publication Date
JP2006054017A JP2006054017A (ja) 2006-02-23
JP2006054017A5 true JP2006054017A5 (enExample) 2007-09-27

Family

ID=35799774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004236245A Pending JP2006054017A (ja) 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ

Country Status (2)

Country Link
US (3) US7177213B2 (enExample)
JP (1) JP2006054017A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006054017A (ja) * 2004-08-13 2006-02-23 Micron Technology Inc メモリディジット線のキャパシタ支持によるプレチャージ
US8282667B2 (en) * 2009-06-05 2012-10-09 Entellus Medical, Inc. Sinus dilation catheter
US8872247B2 (en) * 2009-11-04 2014-10-28 Micron Technology, Inc. Memory cells having a folded digit line architecture
US9224464B2 (en) * 2014-02-10 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and related method

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US107932A (en) * 1870-10-04 Improvement in meat and vegetable slicers
KR890004762B1 (ko) * 1986-11-21 1989-11-25 삼성전자 주식회사 고성능 디램을 위한 센스 증폭기
JPH0634355B2 (ja) * 1987-01-26 1994-05-02 日本電気株式会社 デイジツト線バランスレベル補正方法
JPS63308792A (ja) * 1987-06-10 1988-12-16 Mitsubishi Electric Corp 半導体記憶装置
JPH01171194A (ja) * 1987-12-25 1989-07-06 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JP2641904B2 (ja) * 1988-06-15 1997-08-20 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
JPH02128395A (ja) * 1988-11-08 1990-05-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR100203142B1 (ko) 1996-06-29 1999-06-15 김영환 디램
US5754486A (en) * 1997-02-28 1998-05-19 Micron Technology, Inc. Self-test circuit for memory integrated circuits
US5856949A (en) * 1997-03-07 1999-01-05 Advanced Micro Devices, Inc. Current sense amplifier for RAMs
US6094734A (en) * 1997-08-22 2000-07-25 Micron Technology, Inc. Test arrangement for memory devices using a dynamic row for creating test data
JP2000195268A (ja) * 1998-10-19 2000-07-14 Toshiba Corp 半導体記憶装置
KR100355222B1 (ko) * 1998-12-28 2003-02-19 삼성전자 주식회사 빠른감지속도와높은전원전압마진을갖는전류감지증폭기
KR100299522B1 (ko) * 1999-06-28 2001-11-01 박종섭 고속 센스 증폭기
JP2001319472A (ja) * 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
US6304505B1 (en) * 2000-05-22 2001-10-16 Micron Technology Inc. Differential correlated double sampling DRAM sense amplifier
JP3874655B2 (ja) 2001-12-06 2007-01-31 富士通株式会社 半導体記憶装置、及び半導体記憶装置のデータアクセス方法
US6587367B1 (en) * 2002-03-19 2003-07-01 Texas Instruments Incorporated Dummy cell structure for 1T1C FeRAM cell array
JP2006054017A (ja) * 2004-08-13 2006-02-23 Micron Technology Inc メモリディジット線のキャパシタ支持によるプレチャージ

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