JP2006054017A - メモリディジット線のキャパシタ支持によるプレチャージ - Google Patents

メモリディジット線のキャパシタ支持によるプレチャージ Download PDF

Info

Publication number
JP2006054017A
JP2006054017A JP2004236245A JP2004236245A JP2006054017A JP 2006054017 A JP2006054017 A JP 2006054017A JP 2004236245 A JP2004236245 A JP 2004236245A JP 2004236245 A JP2004236245 A JP 2004236245A JP 2006054017 A JP2006054017 A JP 2006054017A
Authority
JP
Japan
Prior art keywords
voltage
circuit
capacitor
node
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004236245A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006054017A5 (enExample
Inventor
Shigeki Tomishima
冨嶋　茂樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to JP2004236245A priority Critical patent/JP2006054017A/ja
Priority to US10/958,936 priority patent/US7177213B2/en
Publication of JP2006054017A publication Critical patent/JP2006054017A/ja
Priority to US11/642,810 priority patent/US7423923B2/en
Publication of JP2006054017A5 publication Critical patent/JP2006054017A5/ja
Priority to US12/228,459 priority patent/US7663952B2/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP2004236245A 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ Pending JP2006054017A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004236245A JP2006054017A (ja) 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ
US10/958,936 US7177213B2 (en) 2004-08-13 2004-10-05 Capacitor supported precharging of memory digit lines
US11/642,810 US7423923B2 (en) 2004-08-13 2006-12-19 Capacitor supported precharging of memory digit lines
US12/228,459 US7663952B2 (en) 2004-08-13 2008-08-12 Capacitor supported precharging of memory digit lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004236245A JP2006054017A (ja) 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ

Publications (2)

Publication Number Publication Date
JP2006054017A true JP2006054017A (ja) 2006-02-23
JP2006054017A5 JP2006054017A5 (enExample) 2007-09-27

Family

ID=35799774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004236245A Pending JP2006054017A (ja) 2004-08-13 2004-08-13 メモリディジット線のキャパシタ支持によるプレチャージ

Country Status (2)

Country Link
US (3) US7177213B2 (enExample)
JP (1) JP2006054017A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006054017A (ja) * 2004-08-13 2006-02-23 Micron Technology Inc メモリディジット線のキャパシタ支持によるプレチャージ
US8282667B2 (en) * 2009-06-05 2012-10-09 Entellus Medical, Inc. Sinus dilation catheter
US8872247B2 (en) * 2009-11-04 2014-10-28 Micron Technology, Inc. Memory cells having a folded digit line architecture
US9224464B2 (en) * 2014-02-10 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and related method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63183686A (ja) * 1987-01-26 1988-07-29 Nec Corp デイジツト線バランスレベル補正方法
JPS63308792A (ja) * 1987-06-10 1988-12-16 Mitsubishi Electric Corp 半導体記憶装置
JPH023162A (ja) * 1988-06-15 1990-01-08 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH02128395A (ja) * 1988-11-08 1990-05-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US107932A (en) * 1870-10-04 Improvement in meat and vegetable slicers
KR890004762B1 (ko) * 1986-11-21 1989-11-25 삼성전자 주식회사 고성능 디램을 위한 센스 증폭기
JPH01171194A (ja) * 1987-12-25 1989-07-06 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR100203142B1 (ko) 1996-06-29 1999-06-15 김영환 디램
US5754486A (en) * 1997-02-28 1998-05-19 Micron Technology, Inc. Self-test circuit for memory integrated circuits
US5856949A (en) * 1997-03-07 1999-01-05 Advanced Micro Devices, Inc. Current sense amplifier for RAMs
US6094734A (en) * 1997-08-22 2000-07-25 Micron Technology, Inc. Test arrangement for memory devices using a dynamic row for creating test data
JP2000195268A (ja) * 1998-10-19 2000-07-14 Toshiba Corp 半導体記憶装置
KR100355222B1 (ko) * 1998-12-28 2003-02-19 삼성전자 주식회사 빠른감지속도와높은전원전압마진을갖는전류감지증폭기
KR100299522B1 (ko) * 1999-06-28 2001-11-01 박종섭 고속 센스 증폭기
JP2001319472A (ja) * 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
US6304505B1 (en) * 2000-05-22 2001-10-16 Micron Technology Inc. Differential correlated double sampling DRAM sense amplifier
JP3874655B2 (ja) 2001-12-06 2007-01-31 富士通株式会社 半導体記憶装置、及び半導体記憶装置のデータアクセス方法
US6587367B1 (en) * 2002-03-19 2003-07-01 Texas Instruments Incorporated Dummy cell structure for 1T1C FeRAM cell array
JP2006054017A (ja) * 2004-08-13 2006-02-23 Micron Technology Inc メモリディジット線のキャパシタ支持によるプレチャージ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63183686A (ja) * 1987-01-26 1988-07-29 Nec Corp デイジツト線バランスレベル補正方法
JPS63308792A (ja) * 1987-06-10 1988-12-16 Mitsubishi Electric Corp 半導体記憶装置
JPH023162A (ja) * 1988-06-15 1990-01-08 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH02128395A (ja) * 1988-11-08 1990-05-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US20060034113A1 (en) 2006-02-16
US7663952B2 (en) 2010-02-16
US7177213B2 (en) 2007-02-13
US20090003038A1 (en) 2009-01-01
US20070097764A1 (en) 2007-05-03
US7423923B2 (en) 2008-09-09

Similar Documents

Publication Publication Date Title
CN102693753B (zh) 读放大器
US11087805B2 (en) Apparatus with a biasing mechanism and methods for operating the same
US7738306B2 (en) Method to improve the write speed for memory products
JPH0713857B2 (ja) 半導体記憶装置
JP2001195885A (ja) データ伝送回路
JP2018190480A (ja) ランダム・アクセス・メモリ及び関連する回路、方法及びシステム
KR102326332B1 (ko) 독출 컬럼 선택 네거티브 부스트 드라이버 회로 및 시스템
US9013914B2 (en) Semiconductor memory device and method for controlling semiconductor memory device
US8279692B2 (en) Semiconductor device having hierarchical data line structure and control method thereof
US7663952B2 (en) Capacitor supported precharging of memory digit lines
US5777934A (en) Semiconductor memory device with variable plate voltage generator
JP2006228261A (ja) デジット線絶縁ゲートの負電圧駆動
US6469952B1 (en) Semiconductor memory device capable of reducing power supply voltage in a DRAM's word driver
US8379469B2 (en) Integrated circuit memory operation apparatus and methods
US6115308A (en) Sense amplifier and method of using the same with pipelined read, restore and write operations
US6434069B1 (en) Two-phase charge-sharing data latch for memory circuit
EP0318094B1 (en) Integrated memory circuit with on-chip supply voltage control
JP2001229671A (ja) 半導体記憶装置
US20090046503A1 (en) Enhanced Gated Diode Memory Cells
JP2000195276A (ja) 半導体記憶装置
KR100502661B1 (ko) 반도체메모리장치의 비트라인센싱회로
US9070425B2 (en) Data line control for sense amplifiers
JP3129235B2 (ja) 半導体記憶装置
CN119694366A (zh) 字线驱动器、字线驱动方法、存储器及存储系统
JPH0935478A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070813

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070813

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100629

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100706

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20100916

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20100916

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100927

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20101004

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101004

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101008

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20101108

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110830