JP2005530885A - 配線用エッチング液とこれを用いる配線の製造方法とその配線を含む薄膜トランジスタアレイ基板及びその製造方法 - Google Patents
配線用エッチング液とこれを用いる配線の製造方法とその配線を含む薄膜トランジスタアレイ基板及びその製造方法 Download PDFInfo
- Publication number
- JP2005530885A JP2005530885A JP2004515193A JP2004515193A JP2005530885A JP 2005530885 A JP2005530885 A JP 2005530885A JP 2004515193 A JP2004515193 A JP 2004515193A JP 2004515193 A JP2004515193 A JP 2004515193A JP 2005530885 A JP2005530885 A JP 2005530885A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- wiring
- manufacturing
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
Abstract
【解決手段】
本発明による薄膜トランジスタ基板の製造方法では、絶縁基板上にゲート線、ゲート線と連結されているゲート電極及びゲートパッドを含むゲート配線を形成する。次に、ゲート絶縁膜及び半導体層を順次に形成し、ゲート線と交差するデータ線、データ線と連結されゲート電極に隣接するソース電極、ゲート電極に対してソース電極の対向側に位置するドレイン電極及びデータ線と連結されているデータ配線を形成する。次に、保護膜を積層し保護膜をパターニングして、少なくともドレイン電極を露出する接触孔を形成し、保護膜の上部に、銀または銀合金からなる導電膜を積層し、硝酸鉄、硝酸、酢酸、ヘキサエチレングリコールテトラミン及び純水を含むエッチング液を用いて導電膜をパターニングし、接触孔を通じてドレイン電極と連結される反射膜を形成する。
Description
の製造方法及びこれを含む液晶表示装置用薄膜トランジスタアレイ基板の製造方法について図面を参考にして詳細に説明する。
実験例
本発明の実験例では、IZO膜を900Å程度の厚さで積層し、銀または銀合金の導電膜をパターニングするために使用し、硝酸鉄、硝酸、酢酸、ヘキサエチレングリコールテトラミン及び純水を含むエッチング液でIZO膜をエッチングし、エッチングする前、30秒間エッチングした後、及び45秒間エッチングした後に各々のIZO膜の表面を撮影した。
121、123、125 ゲート配線
140 ゲート絶縁膜
150 半導体層
163、165 抵抗接触層
171 データ線
173 ソース電極
175 ドレイン電極
500 感光膜パターン
800 配線
Claims (15)
- 硝酸鉄、硝酸、酢酸、ヘキサエチレングリコールテトラミン及び純水を含むことを特徴とする、配線用エッチング液。
- 前記エッチング液は、1〜5%の前記硝酸鉄、1〜5%の前記硝酸、5〜20%の前記酢酸、0.05〜1%の前記ヘキサエチレングリコールテトラミン及び前記純水を含むことを特徴とする、請求項1に記載の配線用エッチング液。
- 銀または銀合金からなる導電膜を積層する段階と、
硝酸鉄、硝酸、酢酸、ヘキサエチレングリコールテトラミン及び超純水を含むエッチング液を用いて前記導電膜をパターニングする段階と、
を含むことを特徴とする、配線の製造方法。 - 前記エッチング液は、1〜5%の硝酸鉄、1〜5%の硝酸、5〜20%の酢酸、0.05〜1%のヘキサエチレングリコールテトラミン及び超純水を含むことを特徴とする、請求項3に記載の配線の製造方法。
- 前記銀合金は、銀を基本物質とした2元系または3元系であり、
前記銀合金は、原子百分率が0.01〜20%のPd、Cu、Mg、Al、Li、Pu、Np、Ce、Eu、Pr、Ca、Nb、Nd及びSmの導電物質うち少なくとも1つの導電物質を選択した銀合金であることを特徴とする、
請求項3に記載の配線の製造方法。 - 絶縁基板上にゲート線と、前記ゲート線と連結されているゲート電極を含むゲート配線と、を形成する段階と、
ゲート絶縁膜を形成する段階と、
半導体層を形成する段階と、
前記ゲート線と交差するデータ線、前記データ線と連結され前記ゲート電極に隣接するソース電極、及び前記ゲート電極に対して前記ソース電極の対向側に位置するドレイン電極を含むデータ配線を形成する段階と、
銀または銀合金の導電膜を積層する段階と、
硝酸鉄、硝酸、酢酸、ヘキサエチレングリコールテトラミン及び純水を含むエッチング液を用いて前記導電膜をパターニングし、前記ドレイン電極と電気的に連結される反射膜を形成する段階と、
を含むことを特徴とする、薄膜トランジスタアレイ基板の製造方法。 - 前記エッチング液は、1〜5%の前記硝酸鉄、1〜5%の前記硝酸、5〜20%の前記酢酸、0.05〜1%の前記ヘキサエチレングリコールテトラミン及び前記純水を含むことを特徴とする、請求項6に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記銀合金は、銀を基本物質とした2元系または3元系であり、
前記銀合金は、原子百分率が0.01〜20%のPd、Cu、Mg、Al、Li、Pu、Np、Ce、Eu、Pr、Ca、Nb、Nd及びSmの導電物質うち少なくとも1つの導電物質を選択した銀合金であることを特徴とする、
請求項6に記載の薄膜トランジスタアレイ基板の製造方法。 - 前記反射膜と前記データ配線との間に、感光性の有機絶縁膜を含む保護膜を形成する段階をさらに含む、請求項6に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記反射膜の下部に導電物質からなる透明膜を形成する段階をさらに含む、請求項6に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記透明膜はIZOで形成されることを特徴とする、請求項10に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記反射膜は、画素領域に透過領域を有することを特徴とする、請求項11に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記ゲート配線は、走査信号を外部から受けて前記ゲート線に伝達するゲートパッドをさらに含み、
前記データ配線は、映像信号を外部から受けて前記データ線に伝達するデータパッドをさらに含み、
前記透明膜と同一層に、前記ゲートパッド及び前記データパッドと電気的に連結される補助ゲートパッド及び補助データパッドをさらに形成することを特徴とする、請求項12に記載の薄膜トランジスタ基板の製造方法。 - 絶縁基板と、
前記絶縁基板上に形成され、ゲート線と、前記ゲート線に連結されているゲート電極と、を含むゲート配線と、
前記ゲート配線を覆うゲート絶縁膜と、
前記ゲート絶縁膜上部に形成されているケイ素の半導体層と、
前記ゲート絶縁膜または半導体層の上部に形成され、データ線、前記データ線と連結され前記ゲート電極に隣接するソース電極、及び前記ゲート電極に対して前記ソース電極の対向側に位置するドレイン電極を含むデータ配線と、
前記ドレイン電極と電気的に連結され、IZOからなる透明膜と、銀または銀合金からなる反射膜と、を有する画素電極と、を含む薄膜トランジスタアレイ基板において、
前記透明膜の粗度が10Åと等しいかもしくはそれ以下であることを特徴とする、薄膜トランジスタアレイ基板。 - 前記銀合金は、銀を基本物質とした2元系または3元系であり、
前記銀合金は、原子百分率が0.01〜20%のPd、Cu、Mg、Al、Li、Pu、Np、Ce、Eu、Pr、Ca、Nb、Nd及びSmの導電物質うち少なくとも1つの導電物質を選択した銀合金であることを特徴とする、
請求項14に記載の薄膜トランジスタアレイ基板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020035752A KR100853216B1 (ko) | 2002-06-25 | 2002-06-25 | 배선용 식각액, 이를 이용한 배선의 제조 방법, 그 배선을포함하는 박막 트랜지스터 어레이 기판 및 그의 제조 방법 |
PCT/KR2002/001770 WO2004000972A1 (en) | 2002-06-25 | 2002-09-18 | An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005530885A true JP2005530885A (ja) | 2005-10-13 |
JP4423194B2 JP4423194B2 (ja) | 2010-03-03 |
Family
ID=29997380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004515193A Expired - Lifetime JP4423194B2 (ja) | 2002-06-25 | 2002-09-18 | 配線用エッチング液とこれを用いる配線の製造方法とその配線を含む薄膜トランジスタアレイ基板及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7141180B2 (ja) |
JP (1) | JP4423194B2 (ja) |
KR (1) | KR100853216B1 (ja) |
CN (1) | CN1311056C (ja) |
AU (1) | AU2002329098A1 (ja) |
TW (1) | TWI282120B (ja) |
WO (1) | WO2004000972A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132069A1 (ja) * | 2011-03-25 | 2012-10-04 | Dowaエレクトロニクス株式会社 | 銀含有組成物用洗浄剤、銀含有組成物の除去方法、および銀の回収方法 |
JP2013235279A (ja) * | 2005-10-14 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2019212897A (ja) * | 2018-05-30 | 2019-12-12 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100980010B1 (ko) * | 2003-07-14 | 2010-09-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US6951619B2 (en) | 2003-08-22 | 2005-10-04 | Graham Bryant | Apparatus for trapping floating and non-floating particulate matter |
US7446037B2 (en) * | 2004-08-18 | 2008-11-04 | Alford Terry L | Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance |
US8999836B2 (en) | 2005-05-13 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
KR101124569B1 (ko) * | 2005-06-09 | 2012-03-15 | 삼성전자주식회사 | 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 |
JP2006344849A (ja) * | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
KR20070010868A (ko) * | 2005-07-20 | 2007-01-24 | 삼성전자주식회사 | 박막트랜지스터 기판의 제조방법 |
TWI303487B (en) * | 2006-06-13 | 2008-11-21 | Au Optronics Corp | Method for manufactruring an array substate of a transflective liquid crystal display |
JP5328083B2 (ja) * | 2006-08-01 | 2013-10-30 | キヤノン株式会社 | 酸化物のエッチング方法 |
TWI405871B (zh) * | 2009-12-09 | 2013-08-21 | Chemical Treatment of Magnesium - Li Alloy | |
KR101300035B1 (ko) | 2010-05-05 | 2013-08-29 | 엘지디스플레이 주식회사 | 반사형 및 반사투과형 액정표시장치용 어레이 기판 및 그 제조방법 |
JP6122841B2 (ja) * | 2011-05-12 | 2017-04-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | バッテリー活物質合成用の前駆体調合物 |
KR20140063284A (ko) * | 2012-11-16 | 2014-05-27 | 동우 화인켐 주식회사 | 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법 |
KR101926199B1 (ko) * | 2012-12-31 | 2018-12-06 | 동우 화인켐 주식회사 | 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법 |
CN103215592B (zh) * | 2013-04-27 | 2015-07-08 | 苏州诺菲纳米科技有限公司 | 蚀刻膏、蚀刻膏的应用以及利用蚀刻膏蚀刻纳米银导电材料的方法 |
KR20150124540A (ko) | 2014-04-28 | 2015-11-06 | 삼성디스플레이 주식회사 | 식각액 및 이를 이용한 표시 장치의 제조 방법 |
KR102121805B1 (ko) * | 2015-02-16 | 2020-06-11 | 동우 화인켐 주식회사 | 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법 |
KR102259145B1 (ko) * | 2015-03-26 | 2021-06-01 | 동우 화인켐 주식회사 | 은 함유 박막의 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법 |
KR102374749B1 (ko) * | 2015-07-15 | 2022-03-17 | 엘지디스플레이 주식회사 | 저 저항 배선 구조를 갖는 초고밀도 박막 트랜지스터 기판 및 그 제조 방법 |
CN105441949A (zh) * | 2016-01-26 | 2016-03-30 | 苏州诺菲纳米科技有限公司 | 纳米银蚀刻液、制备图案化的纳米银导电膜的方法及触控传感器 |
CN105511706B (zh) * | 2016-01-26 | 2018-11-02 | 苏州诺菲纳米科技有限公司 | 触控传感器的制备方法及其触控传感器 |
KR20190058758A (ko) | 2017-11-21 | 2019-05-30 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 디스플레이 장치의 제조방법 |
KR102554816B1 (ko) | 2018-04-23 | 2023-07-12 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴의 제조 방법 |
CN109116647B (zh) * | 2018-09-17 | 2021-08-27 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
KR102661845B1 (ko) | 2018-10-11 | 2024-04-30 | 삼성디스플레이 주식회사 | 식각액 및 이를 이용한 표시 장치의 제조 방법 |
KR20200056539A (ko) | 2018-11-14 | 2020-05-25 | 삼성디스플레이 주식회사 | 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시 장치의 제조 방법 |
KR20210134177A (ko) | 2020-04-29 | 2021-11-09 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 표시 장치의 제조 방법 |
KR102659176B1 (ko) | 2020-12-28 | 2024-04-23 | 삼성디스플레이 주식회사 | 은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219484A (en) * | 1991-04-25 | 1993-06-15 | Applied Electroless Concepts Inc. | Solder and tin stripper compositions |
JPH07283204A (ja) * | 1994-04-13 | 1995-10-27 | Mitsubishi Gas Chem Co Inc | 半導体装置用洗浄剤および配線パターンの形成方法 |
JP3458036B2 (ja) * | 1996-03-05 | 2003-10-20 | メック株式会社 | 銅および銅合金のマイクロエッチング剤 |
JP3809237B2 (ja) * | 1996-12-06 | 2006-08-16 | キヤノン株式会社 | 電解パターンエッチング方法 |
KR100502796B1 (ko) * | 1998-03-12 | 2005-10-24 | 삼성전자주식회사 | 인듐 틴 옥사이드용 식각액 및 이를 이용한액정 표시 장치의제조 방법 |
JP2000164586A (ja) * | 1998-11-24 | 2000-06-16 | Daikin Ind Ltd | エッチング液 |
KR20010017383A (ko) * | 1999-08-11 | 2001-03-05 | 윤종용 | 반사 투과 복합형 액정표시장치 |
US6280490B1 (en) * | 1999-09-27 | 2001-08-28 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
US6740589B2 (en) * | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
KR100379824B1 (ko) * | 2000-12-20 | 2003-04-11 | 엘지.필립스 엘시디 주식회사 | 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판 |
US6592742B2 (en) * | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
-
2002
- 2002-06-25 KR KR1020020035752A patent/KR100853216B1/ko active IP Right Grant
- 2002-09-18 AU AU2002329098A patent/AU2002329098A1/en not_active Abandoned
- 2002-09-18 JP JP2004515193A patent/JP4423194B2/ja not_active Expired - Lifetime
- 2002-09-18 CN CNB028287207A patent/CN1311056C/zh not_active Expired - Lifetime
- 2002-09-18 WO PCT/KR2002/001770 patent/WO2004000972A1/en active Application Filing
-
2003
- 2003-06-25 TW TW092117335A patent/TWI282120B/zh not_active IP Right Cessation
- 2003-06-25 US US10/607,316 patent/US7141180B2/en not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013235279A (ja) * | 2005-10-14 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8885114B2 (en) | 2005-10-14 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US9773818B2 (en) | 2005-10-14 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device having transparent conductive film and metal film |
US10847547B2 (en) | 2005-10-14 | 2020-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device having transparent conductive film and metal film |
US11296124B2 (en) | 2005-10-14 | 2022-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US11901370B2 (en) | 2005-10-14 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2012132069A1 (ja) * | 2011-03-25 | 2012-10-04 | Dowaエレクトロニクス株式会社 | 銀含有組成物用洗浄剤、銀含有組成物の除去方法、および銀の回収方法 |
CN103339246A (zh) * | 2011-03-25 | 2013-10-02 | 同和电子科技有限公司 | 含银组合物用清洗剂、含银组合物的去除方法、以及银的回收方法 |
JP5758483B2 (ja) * | 2011-03-25 | 2015-08-05 | Dowaエレクトロニクス株式会社 | 銀含有組成物用洗浄剤、銀含有組成物の除去方法、および銀の回収方法 |
CN103339246B (zh) * | 2011-03-25 | 2015-09-02 | 同和电子科技有限公司 | 含银组合物用清洗剂、含银组合物的去除方法、以及银的回收方法 |
JP2019212897A (ja) * | 2018-05-30 | 2019-12-12 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法 |
JP7403966B2 (ja) | 2018-05-30 | 2023-12-25 | 三星ディスプレイ株式會社 | 薄膜エッチング液組成物、及びそれを利用した金属パターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US7141180B2 (en) | 2006-11-28 |
JP4423194B2 (ja) | 2010-03-03 |
US20040072444A1 (en) | 2004-04-15 |
AU2002329098A1 (en) | 2004-01-06 |
WO2004000972A1 (en) | 2003-12-31 |
TW200403743A (en) | 2004-03-01 |
KR100853216B1 (ko) | 2008-08-20 |
CN1625590A (zh) | 2005-06-08 |
TWI282120B (en) | 2007-06-01 |
KR20040000801A (ko) | 2004-01-07 |
CN1311056C (zh) | 2007-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4423194B2 (ja) | 配線用エッチング液とこれを用いる配線の製造方法とその配線を含む薄膜トランジスタアレイ基板及びその製造方法 | |
JP4308023B2 (ja) | 表示装置用薄膜トランジスタアレイ基板の製造方法 | |
JP4544860B2 (ja) | 半導体素子の接触部の製造方法、並びにこれを含む液晶表示装置用薄膜トランジスタアレイ基板の製造方法 | |
JP4939794B2 (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
JP4481759B2 (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
US7666697B2 (en) | Thin film transistor substrate and method of manufacturing the same | |
JP4888629B2 (ja) | 薄膜トランジスタ表示板の製造方法 | |
KR20090096226A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
JP2006221162A (ja) | 表示装置用配線、薄膜トランジスタ表示板及びその製造方法 | |
JP2006049889A (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
JP2006171755A (ja) | マスク及びこれを用いた半導体素子の製造方法及び薄膜トランジスタ表示板の製造方法 | |
JP4668533B2 (ja) | 配線用エッチング液とこれを利用した配線の製造方法及びこれを含む薄膜トランジスタ基板の製造方法 | |
JP2006108612A (ja) | 薄膜トランジスタ表示板の製造方法 | |
JP2004311931A (ja) | 薄膜トランジスタアレイ基板及びその製造方法 | |
JP2007053354A (ja) | 配線構造と配線形成方法及び薄膜トランジスター基板とその製造方法 | |
JP4898229B2 (ja) | 光マスク、及びそれを用いた薄膜トランジスタ表示パネルの製造方法 | |
JP2007108746A (ja) | 薄膜トランジスタ表示板の製造方法 | |
JP2001267420A (ja) | 配線の接触構造及びその製造方法とこれを含む薄膜トランジスタ基板及びその製造方法 | |
JP2005506712A (ja) | 配線用エッチング液とこれを利用した配線の製造方法及びこれを利用した薄膜トランジスタアレイ基板の製造方法 | |
JP2004356616A (ja) | 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法 | |
KR20020080559A (ko) | 박막 트랜지스터 기판 및 그 제조 방법 | |
JP5229775B2 (ja) | 液晶表示装置の製造方法 | |
KR100848109B1 (ko) | 배선용 식각액, 이를 이용한 배선의 제조 방법 및 이를포함하는 박막 트랜지스터 어레이 기판의 제조 방법 | |
JP2005026690A (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
KR100750914B1 (ko) | 화소 전극용 투명 도전막 및 이를 포함하는 액정 표시장치용 박막 트랜지스터 기판 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090417 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090901 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20091104 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20091201 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091207 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121211 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4423194 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121211 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131211 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131211 Year of fee payment: 4 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131211 Year of fee payment: 4 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |