JP2007053354A - 配線構造と配線形成方法及び薄膜トランジスター基板とその製造方法 - Google Patents
配線構造と配線形成方法及び薄膜トランジスター基板とその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 198
- 229910052709 silver Inorganic materials 0.000 claims abstract description 198
- 239000004332 silver Substances 0.000 claims abstract description 198
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 39
- 239000000956 alloy Substances 0.000 claims abstract description 39
- 238000000059 patterning Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 275
- 239000010409 thin film Substances 0.000 claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 18
- 239000000463 material Substances 0.000 abstract description 14
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 104
- 239000011521 glass Substances 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 14
- 238000003860 storage Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005401 electroluminescence Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】下部構造物上に形成された銀(Ag)酸化物を含む下部膜と、下部膜上に形成された銀(Ag)または銀(Ag)合金を含む銀(Ag)導電膜を含む配線構造とした。これにより配線不良による配線の信頼性の低下が防止できる。
【選択図】なし
Description
22:ゲート線
24:ゲート先端
26:ゲート電極
27:維持電極
28:維持電極線
30:ゲート絶縁膜
40:半導体層
55、56:抵抗性接触層
62:データ線
65:ソース電極
66:ドレーン電極
67:ドレーン電極拡張部
68:データ先端
70:保護膜
82:画素電極
Claims (28)
- 下部構造物上に形成された銀(Ag)酸化物を含む下部膜と、
前記下部膜上に形成された銀(Ag)または銀(Ag)合金を含む銀(Ag)導電膜と、
を含むことを特徴とする配線構造。 - 前記下部構造物及び下部膜の界面に前記銀(Ag)酸化物が連続的または非連続的に位置することを特徴とする請求項1に記載の配線構造。
- 前記下部膜の厚さは、10ないし2000Åであることを特徴とする請求項1に記載の配線構造。
- 前記下部膜は、5ないし60at%の酸素を含有することを特徴とする請求項1に記載の配線構造。
- 前記銀(Ag)導電膜上に、銀(Ag)酸化物を含む上部膜をさらに含むことを特徴とする請求項1に記載の配線構造。
- 前記銀(Ag)導電膜上に、ITO、非晶質ITO、IZO、W、Mo、MoNbまたはMoWを含む上部膜をさらに含むことを特徴とする請求項1に記載の配線構造。
- 前記下部構造物は、絶縁基板、半導体層または絶縁膜であることを特徴とする請求項1に記載の配線構造。
- 下部構造物上に、銀(Ag)酸化物を含む下部膜を形成する段階と、
前記下部膜が形成されている下部構造物上に、銀(Ag)または銀(Ag)合金を含む銀(Ag)導電膜を形成する段階と、
前記銀(Ag)導電膜上に、上部膜を形成する段階と、
配線を定義するフォトレジストパターンを蝕刻マスクとして用いて前記上部膜、銀(Ag)導電膜及び下部膜をパターニングする段階と、
を含むことを特徴とする配線形成方法。 - 前記下部膜を形成する段階は、前記下部構造物と前記下部膜の界面に銀(Ag)酸化物を連続的または非連続的に位置させる段階を含むことを特徴とする請求項8に記載の配線形成方法。
- 前記下部膜を形成する段階は、酸素を含む雰囲気下で銀(Ag)または銀(Ag)合金をターゲットにしてスパッタリングする段階であることを特徴とする請求項8に記載の配線形成方法。
- 前記銀(Ag)導電膜を形成する段階は、前記下部膜を形成する段階に連続して酸素供給を中断し、インサイチュで進行される段階であることを特徴とする請求項10に記載の配線形成方法。
- 前記上部膜は、銀(Ag)酸化物を含むことを特徴とする請求項8に記載の配線形成方法。
- 前記上部膜を形成する段階は、前記銀(Ag)導電膜を形成する段階で酸素を供給しながらインサイチュで進行される段階であることを特徴とする請求項12に記載の配線形成方法。
- 前記下部膜は、5ないし60at%の酸素を含有することを特徴とする請求項8に記載の配線形成方法。
- 前記下部構造物は、絶縁基板、半導体層または絶縁膜であることを特徴とする請求項8に記載の配線形成方法。
- 縁基板上に形成されて第1方向に延びたゲート線及び前記ゲート線に連結されたゲート電極を含むゲート配線と、
前記絶縁基板の上に前記ゲート配線と絶縁して形成されて、前記ゲート線と交差するように第2方向に延びたデータ線、前記データ線に連結されたソース電極及び前記ソース電極と離隔して位置するドレーン電極を含むデータ配線と、
前記ゲート配線と前記データ配線上に画素ごとに形成され、前記ドレーン電極と連結された画素電極を含むが、
前記ゲート配線及び/または前記データ配線は、下部構造物上に形成された銀(Ag)酸化物を含む下部膜と、
前記下部膜上に形成された銀(Ag)または銀(Ag)合金を含む銀(Ag)導電膜と、
を含むことを特徴とする薄膜トランジスター基板。 - 前記下部構造物と下部膜の界面に、銀(Ag)酸化物が連続的または非連続的に位置することを特徴とする請求項16に記載の薄膜トランジスター基板。
- 前記下部膜の厚さは、10ないし2000Åであることを特徴とする請求項16に記載の薄膜トランジスター基板。
- 前記下部膜は、5ないし60at%の酸素を含有することを特徴とする請求項16に記載の薄膜トランジスター基板。
- 前記銀(Ag)導電膜上に、銀(Ag)酸化物を含む上部膜をさらに含むことを特徴とする請求項16に記載の薄膜トランジスター基板。
- 前記銀(Ag)導電膜上に、ITO、非晶質ITO、IZO、W、Mo、MoNbまたはMoWを含む上部膜をさらに含むことを特徴とする請求項16に記載の薄膜トランジスター基板。
- 絶縁基板上に、第1方向に延びたゲート線及び前記ゲート線に連結されたゲート電極を含むゲート配線を形成する段階と、
前記絶縁基板上に、前記ゲート線と交差するように2方向に延びたデータ線、前記データ線に連結されたソース電極及び前記ソース電極と離隔して位置するドレーン電極を含み、前記ゲート配線と絶縁されているデータ配線を形成する段階と、
前記ゲート配線と前記データ配線上に、画素ごとに前記ドレーン電極と連結された画素電極を形成する段階と、を含むが、
前記ゲート配線及び/または前記データ配線を形成する段階は、
下部構造物上に銀(Ag)酸化物を含む下部膜を形成する段階と、
前記下部膜が形成されている下部構造物上に、銀(Ag)または銀(Ag)合金を含む銀(Ag)導電膜を形成する段階と、
前記銀(Ag)導電膜上に上部膜を形成する段階と、
前記配線を定義するフォトレジストパターンを蝕刻マスクとして用いて前記上部膜、銀(Ag)導電膜及び下部膜をパターニングする段階と、
を含むことを特徴とする薄膜トランジスター基板の製造方法。 - 前記下部膜を形成する段階は、前記下部構造物と前記下部膜の界面に銀(Ag)酸化物を連続的または非連続的に位置させる段階を含むことを特徴とする請求項22に記載の薄膜トランジスター基板の製造方法。
- 前記下部膜を形成する段階は、酸素を含む雰囲気下で銀(Ag)または銀(Ag)合金をターゲットにしてスパッタリングする段階であることを特徴とする請求項22に記載の薄膜トランジスター基板の製造方法。
- 前記銀(Ag)導電膜を形成する段階は、前記下部膜を形成する段階に連続して酸素供給を中断し、インサイチュで進行される段階であることを特徴とする請求項24に記載の薄膜トランジスター基板の製造方法。
- 前記上部膜は、銀(Ag)酸化物を含むことを特徴とする請求項22に記載の薄膜トランジスター基板の製造方法。
- 前記上部膜を形成する段階は、前記銀(Ag)導電膜を形成する段階で酸素を供給しながらインサイチュで進行される段階であることを特徴とする請求項26に記載の薄膜トランジスター基板の製造方法。
- 前記下部膜は、5ないし60at%の酸素を含有することを特徴とする請求項22に記載の薄膜トランジスター基板の製造方法。
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JP2010046343A (ja) * | 2008-08-22 | 2010-03-04 | Fujifilm Corp | 超音波診断装置 |
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