JP2005524925A - 抵抗性チップを具備する半導体プローブ及びその製造方法、それを具備する情報記録装置、情報再生装置及び情報測定装置。 - Google Patents
抵抗性チップを具備する半導体プローブ及びその製造方法、それを具備する情報記録装置、情報再生装置及び情報測定装置。 Download PDFInfo
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Abstract
【解決手段】
第1不純物がドープされたチップと、チップが末端部に位置するカンチレバーと、を具備し、チップは、チップの尖頭部に位置し、第2不純物が低濃度でドープされて形成された抵抗領域及び、抵抗領域に接触するように抵抗領域の周辺に位置し、第2不純物が高濃度でドープされて形成された第1及び第2半導体電極領域と、を具備する半導体プローブ。
Description
また、このように製作された半導体プローブを、走査プローブ技術を応用した大容量、超小型情報記録及び/または再生装置、情報測定装置に利用する場合、記録媒体の狭い領域に存在する電荷を検出、形成して情報を記録、再生または測定できる装置として利用できる。
Claims (6)
- 第1不純物がドープされたチップと、前記チップが末端部に位置するカンチレバーと、を具備し、
前記チップは、
前記チップの尖頭部に位置し、前記第1不純物とは異なる第2不純物が低濃度でドープされて形成された抵抗領域と、
前記抵抗領域と接触するように前記第2不純物が高濃度でドープされて形成される第1及び第2半導体電極領域と、を具備することを特徴とする半導体プローブ。 - 第1不純物をドープした基板の表面に前記第1不純物と異なる第2不純物を低濃度ドープして抵抗層を形成する段階と、
前記抵抗層の上面にマスク膜を所定形態に形成し、前記マスク膜によりマスクされた領域を除外した基板の領域に前記第2不純物を高濃度ドープして第1及び第2半導体電極領域を形成する段階と、
前記マスク膜と直交する方向に所定形態の感光剤を塗布した後、エッチング工程を行って前記マスク膜を所定形態に形成する段階と、
前記マスク膜によりマスクされた領域を除外した基板の領域をエッチングし、熱酸化工程を行って半導体チップを形成する段階と、を含むことを特徴とする半導体プローブの製造方法。 - 前記抵抗層上に形成されたマスク膜はストライプ状であることを特徴とする請求項2に記載の半導体プローブの製造方法。
- 底電極と、前記底電極上に積層された強誘電性膜及び、半導体プローブを具備した記録媒体に情報を記録する情報記録装置において、
全ての部分において第1不純物がドープされたチップにおける尖頭部に、第2不純物がドープされて形成された抵抗領域及び、チップの傾斜面に前記第2不純物がドープされて形成された半導体電極領域を具備するチップと、前記チップが末端部に位置するカンチレバーと、を具備する半導体プローブを含み、
前記半導体電極領域と底電極間に電圧を印加して、前記強誘電性膜に誘電分極を形成して記録媒体内の誘電分極を形成して情報を記録する半導体プローブを利用した情報記録装置。 - 強誘電性膜と半導体プローブとを具備した記録媒体に記録された情報を再生する情報再生装置において、
全ての部分において第1不純物がドープされたチップにおける尖頭部に、第2不純物がドープされて形成された抵抗領域及び、チップの傾斜面に前記第2不純物がドープされて形成された半導体電極領域を具備するチップと、前記チップが末端部に位置するカンチレバーと、を具備する半導体プローブを含み、
前記記録媒体で発生する電界により変化する前記抵抗領域の抵抗値の変化を検出して前記情報を再生する半導体プローブを利用した情報再生装置。 - 全ての部分において第1不純物がドープされたチップにおける尖頭部に、第2不純物がドープされて形成された抵抗領域及び、前記第2不純物がドープされて形成された半導体電極領域を具備するチップと、前記チップが末端部に位置するカンチレバーと、を具備する半導体プローブを含み、
前記試料で発生する電界により変化する前記抵抗領域の抵抗値の変化を検出して前記情報を測定する半導体プローブを利用した情報測定装置。
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KR10-2002-0025400A KR100468850B1 (ko) | 2002-05-08 | 2002-05-08 | 저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 구비하는 정보 기록장치, 정보재생장치 및 정보측정장치 |
PCT/KR2003/000878 WO2003096409A1 (en) | 2002-05-08 | 2003-05-01 | Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe |
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- 2003-05-01 CN CNB038104075A patent/CN100568478C/zh not_active Expired - Fee Related
- 2003-05-01 JP JP2004504288A patent/JP4192146B2/ja not_active Expired - Fee Related
- 2003-05-01 AU AU2003224484A patent/AU2003224484A1/en not_active Abandoned
- 2003-05-01 US US10/512,967 patent/US7141999B2/en not_active Expired - Fee Related
- 2003-05-01 EP EP03721131A patent/EP1502296A4/en not_active Withdrawn
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JP4503587B2 (ja) * | 2006-01-09 | 2010-07-14 | 三星電子株式会社 | 半導体探針を利用した情報再生方法及びそれを適用した装置 |
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US7746753B2 (en) | 2006-01-09 | 2010-06-29 | Samsung Electronics Co., Ltd. | Method of reproducing information using semiconductor probe and device adopting the semiconductor probe |
JP2007272961A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 読み出しセンサー、これを用いたヘッド及び情報記録装置、読み出しセンサーの製造方法 |
JP2008041237A (ja) * | 2006-08-02 | 2008-02-21 | Samsung Electronics Co Ltd | 電界再生/記録ヘッドとその製造方法、及び電界再生/記録ヘッドを備えた情報再生/記録装置 |
JP2008052892A (ja) * | 2006-08-24 | 2008-03-06 | Samsung Electronics Co Ltd | 高密度データ格納装置及びその記録/再生方法 |
JP2009032389A (ja) * | 2007-07-30 | 2009-02-12 | Samsung Electronics Co Ltd | 電場センサーのセンシング感度向上方法、電場センサーを採用した記憶装置、及びその情報再生方法 |
JP2009134853A (ja) * | 2007-11-29 | 2009-06-18 | Samsung Electronics Co Ltd | 電界記録再生ヘッド、それを採用した電界記録再生装置及び電界記録再生ヘッドの製造方法 |
WO2013065094A1 (ja) | 2011-10-30 | 2013-05-10 | 株式会社日本マイクロニクス | 半導体プローブによる量子電池の試験装置及び試験方法 |
KR20140101337A (ko) | 2011-10-30 | 2014-08-19 | 가부시키가이샤 니혼 마이크로닉스 | 반도체 프로브에 의한 양자 전지의 시험 장치 및 시험 방법 |
JPWO2013065094A1 (ja) * | 2011-10-30 | 2015-04-02 | 株式会社日本マイクロニクス | 半導体プローブによる量子電池の試験装置及び試験方法 |
US9164149B2 (en) | 2011-10-30 | 2015-10-20 | Kabushiki Kaisha Nihon Micronics | Testing device and testing method for quantum battery using semiconductor probe |
WO2013179471A1 (ja) | 2012-05-31 | 2013-12-05 | 株式会社日本マイクロニクス | 量子電池の試験用半導体プローブ、試験装置及び試験方法 |
JPWO2013179471A1 (ja) * | 2012-05-31 | 2016-01-18 | 株式会社日本マイクロニクス | 量子電池の試験用半導体プローブ、試験装置及び試験方法 |
US9778284B2 (en) | 2012-05-31 | 2017-10-03 | Kabushiki Kaisha Nihon Micronics | Semiconductor probe, testing device and testing method for testing quantum battery |
Also Published As
Publication number | Publication date |
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US7141999B2 (en) | 2006-11-28 |
EP1502296A4 (en) | 2007-09-05 |
CN1653605A (zh) | 2005-08-10 |
US20050231225A1 (en) | 2005-10-20 |
WO2003096409A1 (en) | 2003-11-20 |
KR100468850B1 (ko) | 2005-01-29 |
JP4192146B2 (ja) | 2008-12-03 |
KR20030087372A (ko) | 2003-11-14 |
CN100568478C (zh) | 2009-12-09 |
US20070020938A1 (en) | 2007-01-25 |
US7442571B2 (en) | 2008-10-28 |
EP1502296A1 (en) | 2005-02-02 |
AU2003224484A1 (en) | 2003-11-11 |
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