JP2005519474A - 高周波半導体デバイスとその製造方法 - Google Patents

高周波半導体デバイスとその製造方法 Download PDF

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Publication number
JP2005519474A
JP2005519474A JP2003573706A JP2003573706A JP2005519474A JP 2005519474 A JP2005519474 A JP 2005519474A JP 2003573706 A JP2003573706 A JP 2003573706A JP 2003573706 A JP2003573706 A JP 2003573706A JP 2005519474 A JP2005519474 A JP 2005519474A
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Prior art keywords
forming
gate structure
ground shield
dielectric layer
gate
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Pending
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JP2003573706A
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English (en)
Japanese (ja)
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JP2005519474A5 (enExample
Inventor
ピー． ドラゴン、クリストファー
アール． バーガー、ウェイン
ジェイ． ラメイ、ダニエル
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NXP USA Inc
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NXP USA Inc
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Publication of JP2005519474A publication Critical patent/JP2005519474A/ja
Publication of JP2005519474A5 publication Critical patent/JP2005519474A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003573706A 2002-02-28 2003-02-19 高周波半導体デバイスとその製造方法 Pending JP2005519474A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/086,061 US6744117B2 (en) 2002-02-28 2002-02-28 High frequency semiconductor device and method of manufacture
PCT/US2003/005104 WO2003075354A1 (en) 2002-02-28 2003-02-19 High frequency semiconductor device and method of manufacture

Publications (2)

Publication Number Publication Date
JP2005519474A true JP2005519474A (ja) 2005-06-30
JP2005519474A5 JP2005519474A5 (enExample) 2010-01-21

Family

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JP2003573706A Pending JP2005519474A (ja) 2002-02-28 2003-02-19 高周波半導体デバイスとその製造方法

Country Status (7)

Country Link
US (1) US6744117B2 (enExample)
EP (1) EP1479110A1 (enExample)
JP (1) JP2005519474A (enExample)
KR (1) KR100968058B1 (enExample)
CN (1) CN100356580C (enExample)
AU (1) AU2003211162A1 (enExample)
WO (1) WO2003075354A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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JP2007503717A (ja) * 2003-08-27 2007-02-22 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Ｌｄｍｏｓトランジスタを有する電子装置
JP2014120770A (ja) * 2012-12-12 2014-06-30 Freescale Semiconductor Inc 集積型受動素子を含む集積回路およびその製造方法
DE102017200167A1 (de) 2016-02-04 2017-08-10 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren der Fertigung derselben

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SE522576C2 (sv) * 2001-03-09 2004-02-17 Ericsson Telefon Ab L M Effekt-LDMOS-transistor för radiofrekvens
DE10219116A1 (de) * 2002-04-29 2003-11-13 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Verbindungslagen sowie zugehörige Herstellungsverfahren
SE0302809D0 (sv) * 2003-10-24 2003-10-24 Infineon Technologies Ag High frequency power transistor device, integrated circuit, and fabrication method thereof
SE0302810D0 (sv) * 2003-10-24 2003-10-24 Infineon Technologies Ag Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
US7026204B2 (en) * 2004-03-24 2006-04-11 Freescale Semiconductor, Inc. Transistor with reduced gate-to-source capacitance and method therefor
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
US7307314B2 (en) * 2004-06-16 2007-12-11 Cree Microwave Llc LDMOS transistor with improved gate shield
US20060049464A1 (en) 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
EP1717850A1 (en) * 2005-04-29 2006-11-02 STMicroelectronics S.r.l. Method of manufacturing a lateral power MOS transistor
US7432133B2 (en) * 2005-10-24 2008-10-07 Freescale Semiconductor, Inc. Plastic packaged device with die interface layer
US20070090545A1 (en) * 2005-10-24 2007-04-26 Condie Brian W Semiconductor device with improved encapsulation
US7435625B2 (en) * 2005-10-24 2008-10-14 Freescale Semiconductor, Inc. Semiconductor device with reduced package cross-talk and loss
US20070200233A1 (en) * 2005-12-14 2007-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structures with reduced coupling noise
US7368668B2 (en) * 2006-02-03 2008-05-06 Freescale Semiconductor Inc. Ground shields for semiconductors
KR100764930B1 (ko) * 2006-02-16 2007-10-09 충북대학교 산학협력단 고주파 집적 회로 장치 및 그 제조 방법
RU2338297C1 (ru) * 2007-01-16 2008-11-10 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Свч ldmos-транзистор
US20080258263A1 (en) * 2007-04-20 2008-10-23 Harry Yue Gee High Current Steering ESD Protection Zener Diode And Method
ATE543213T1 (de) * 2008-04-15 2012-02-15 Nxp Bv Hochfrequenz-feldeffekttransistor
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
EP2383786B1 (en) 2010-04-29 2018-08-15 Ampleon Netherlands B.V. Semiconductor transistor comprising two electrically conductive shield elements
CN102184911A (zh) * 2011-04-08 2011-09-14 昆山华太电子科技有限公司 大功率高频器件密勒寄生电容屏蔽结构
US8981475B2 (en) * 2013-06-18 2015-03-17 International Business Machines Corporation Lateral diffusion metal oxide semiconductor (LDMOS)
KR102122593B1 (ko) * 2013-10-22 2020-06-15 삼성전자주식회사 반도체 소자
US9449969B1 (en) * 2015-06-03 2016-09-20 Futurewei Technologies, Inc. Device and method for a high isolation switch
CN106601722A (zh) * 2015-10-16 2017-04-26 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US9899484B1 (en) 2016-12-30 2018-02-20 Texas Instruments Incorporated Transistor with source field plates under gate runner layers
US10236573B2 (en) * 2017-06-20 2019-03-19 Qualcomm Incorporated On-chip coupling capacitor with patterned radio frequency shielding structure for lower loss
US12211912B2 (en) 2020-06-30 2025-01-28 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device and fabrication method thereof
US12328927B2 (en) 2020-09-25 2025-06-10 Intel Coporation Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures

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JPH08172189A (ja) * 1994-12-20 1996-07-02 Nippondenso Co Ltd 高耐圧ｍｏｓ型電界効果トランジスタ
JPH08255908A (ja) * 1994-11-02 1996-10-01 Texas Instr Inc <Ti> 厚い銅の相互接続を持つｌｄｍｏｓダイオードを用いるｅｓｄ保護構造
JPH09172175A (ja) * 1995-10-11 1997-06-30 Internatl Rectifier Corp 半導体デバイスのターミネーション構造およびその製法
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JPH08255908A (ja) * 1994-11-02 1996-10-01 Texas Instr Inc <Ti> 厚い銅の相互接続を持つｌｄｍｏｓダイオードを用いるｅｓｄ保護構造
JPH08172189A (ja) * 1994-12-20 1996-07-02 Nippondenso Co Ltd 高耐圧ｍｏｓ型電界効果トランジスタ
JPH09172175A (ja) * 1995-10-11 1997-06-30 Internatl Rectifier Corp 半導体デバイスのターミネーション構造およびその製法
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007503717A (ja) * 2003-08-27 2007-02-22 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Ｌｄｍｏｓトランジスタを有する電子装置
JP2014120770A (ja) * 2012-12-12 2014-06-30 Freescale Semiconductor Inc 集積型受動素子を含む集積回路およびその製造方法
DE102017200167A1 (de) 2016-02-04 2017-08-10 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren der Fertigung derselben
JP2017139352A (ja) * 2016-02-04 2017-08-10 三菱電機株式会社 半導体装置及びその製造方法
US9882011B2 (en) 2016-02-04 2018-01-30 Mitsubishi Electric Corporation Semiconductor device with reduced parasitic drain-gate capacitance and method of manufacturing the same

Also Published As

Publication number Publication date
AU2003211162A1 (en) 2003-09-16
EP1479110A1 (en) 2004-11-24
CN1639871A (zh) 2005-07-13
KR20040087325A (ko) 2004-10-13
US6744117B2 (en) 2004-06-01
KR100968058B1 (ko) 2010-07-08
WO2003075354A1 (en) 2003-09-12
CN100356580C (zh) 2007-12-19
US20030160324A1 (en) 2003-08-28

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