SE0302809D0 - High frequency power transistor device, integrated circuit, and fabrication method thereof - Google Patents

High frequency power transistor device, integrated circuit, and fabrication method thereof

Info

Publication number
SE0302809D0
SE0302809D0 SE0302809A SE0302809A SE0302809D0 SE 0302809 D0 SE0302809 D0 SE 0302809D0 SE 0302809 A SE0302809 A SE 0302809A SE 0302809 A SE0302809 A SE 0302809A SE 0302809 D0 SE0302809 D0 SE 0302809D0
Authority
SE
Sweden
Prior art keywords
region
gate
high frequency
power transistor
transistor device
Prior art date
Application number
SE0302809A
Other languages
English (en)
Inventor
Hans Nordstroem
Ted Johansson
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to SE0302809A priority Critical patent/SE0302809D0/sv
Publication of SE0302809D0 publication Critical patent/SE0302809D0/sv
Priority to US10/946,870 priority patent/US20050087834A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SE0302809A 2003-10-24 2003-10-24 High frequency power transistor device, integrated circuit, and fabrication method thereof SE0302809D0 (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE0302809A SE0302809D0 (sv) 2003-10-24 2003-10-24 High frequency power transistor device, integrated circuit, and fabrication method thereof
US10/946,870 US20050087834A1 (en) 2003-10-24 2004-09-22 High frequency power transistor device, integrated circuit, and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0302809A SE0302809D0 (sv) 2003-10-24 2003-10-24 High frequency power transistor device, integrated circuit, and fabrication method thereof

Publications (1)

Publication Number Publication Date
SE0302809D0 true SE0302809D0 (sv) 2003-10-24

Family

ID=29546625

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0302809A SE0302809D0 (sv) 2003-10-24 2003-10-24 High frequency power transistor device, integrated circuit, and fabrication method thereof

Country Status (2)

Country Link
US (1) US20050087834A1 (sv)
SE (1) SE0302809D0 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7868394B2 (en) * 2005-08-09 2011-01-11 United Microelectronics Corp. Metal-oxide-semiconductor transistor and method of manufacturing the same
SG130099A1 (en) * 2005-08-12 2007-03-20 Ciclon Semiconductor Device Co Power ldmos transistor
KR101019406B1 (ko) 2008-09-10 2011-03-07 주식회사 동부하이텍 Ｌｄｍｏｓ 소자 제조 방법
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
CN103035724B (zh) * 2012-11-02 2016-06-08 上海华虹宏力半导体制造有限公司 射频横向双扩散场效应晶体管及其制造方法
CN113540214B (zh) * 2021-06-28 2024-04-19 上海华虹宏力半导体制造有限公司 屏蔽盾的刻蚀方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5119149A (en) * 1990-10-22 1992-06-02 Motorola, Inc. Gate-drain shield reduces gate to drain capacitance
US5252848A (en) * 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
CA2314632C (en) * 2000-07-28 2008-08-26 Calvin Douglas Foot Fence post
US6744117B2 (en) * 2002-02-28 2004-06-01 Motorola, Inc. High frequency semiconductor device and method of manufacture

Also Published As

Publication number Publication date
US20050087834A1 (en) 2005-04-28

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