JP2005519474A5 - - Google Patents

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Publication number
JP2005519474A5
JP2005519474A5 JP2003573706A JP2003573706A JP2005519474A5 JP 2005519474 A5 JP2005519474 A5 JP 2005519474A5 JP 2003573706 A JP2003573706 A JP 2003573706A JP 2003573706 A JP2003573706 A JP 2003573706A JP 2005519474 A5 JP2005519474 A5 JP 2005519474A5
Authority
JP
Japan
Prior art keywords
dielectric layer
gate
ground shield
gate structure
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003573706A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005519474A (ja
Filing date
Publication date
Priority claimed from US10/086,061 external-priority patent/US6744117B2/en
Application filed filed Critical
Publication of JP2005519474A publication Critical patent/JP2005519474A/ja
Publication of JP2005519474A5 publication Critical patent/JP2005519474A5/ja
Pending legal-status Critical Current

Links

JP2003573706A 2002-02-28 2003-02-19 高周波半導体デバイスとその製造方法 Pending JP2005519474A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/086,061 US6744117B2 (en) 2002-02-28 2002-02-28 High frequency semiconductor device and method of manufacture
PCT/US2003/005104 WO2003075354A1 (en) 2002-02-28 2003-02-19 High frequency semiconductor device and method of manufacture

Publications (2)

Publication Number Publication Date
JP2005519474A JP2005519474A (ja) 2005-06-30
JP2005519474A5 true JP2005519474A5 (enExample) 2010-01-21

Family

ID=27753784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003573706A Pending JP2005519474A (ja) 2002-02-28 2003-02-19 高周波半導体デバイスとその製造方法

Country Status (7)

Country Link
US (1) US6744117B2 (enExample)
EP (1) EP1479110A1 (enExample)
JP (1) JP2005519474A (enExample)
KR (1) KR100968058B1 (enExample)
CN (1) CN100356580C (enExample)
AU (1) AU2003211162A1 (enExample)
WO (1) WO2003075354A1 (enExample)

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SE522576C2 (sv) * 2001-03-09 2004-02-17 Ericsson Telefon Ab L M Effekt-LDMOS-transistor för radiofrekvens
DE10219116A1 (de) * 2002-04-29 2003-11-13 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Verbindungslagen sowie zugehörige Herstellungsverfahren
EP1661186A2 (en) * 2003-08-27 2006-05-31 Koninklijke Philips Electronics N.V. Electronic device comprising an ldmos transistor
SE0302810D0 (sv) * 2003-10-24 2003-10-24 Infineon Technologies Ag Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
SE0302809D0 (sv) * 2003-10-24 2003-10-24 Infineon Technologies Ag High frequency power transistor device, integrated circuit, and fabrication method thereof
US7026204B2 (en) * 2004-03-24 2006-04-11 Freescale Semiconductor, Inc. Transistor with reduced gate-to-source capacitance and method therefor
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
US7307314B2 (en) * 2004-06-16 2007-12-11 Cree Microwave Llc LDMOS transistor with improved gate shield
US20060049464A1 (en) 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
EP1717850A1 (en) * 2005-04-29 2006-11-02 STMicroelectronics S.r.l. Method of manufacturing a lateral power MOS transistor
US7432133B2 (en) * 2005-10-24 2008-10-07 Freescale Semiconductor, Inc. Plastic packaged device with die interface layer
US20070090545A1 (en) * 2005-10-24 2007-04-26 Condie Brian W Semiconductor device with improved encapsulation
US7435625B2 (en) * 2005-10-24 2008-10-14 Freescale Semiconductor, Inc. Semiconductor device with reduced package cross-talk and loss
US20070200233A1 (en) * 2005-12-14 2007-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structures with reduced coupling noise
US7368668B2 (en) * 2006-02-03 2008-05-06 Freescale Semiconductor Inc. Ground shields for semiconductors
KR100764930B1 (ko) * 2006-02-16 2007-10-09 충북대학교 산학협력단 고주파 집적 회로 장치 및 그 제조 방법
RU2338297C1 (ru) * 2007-01-16 2008-11-10 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Свч ldmos-транзистор
US20080258263A1 (en) * 2007-04-20 2008-10-23 Harry Yue Gee High Current Steering ESD Protection Zener Diode And Method
EP2269219B1 (en) * 2008-04-15 2012-01-25 Nxp B.V. High frequency field-effect transistor
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
EP2383786B1 (en) 2010-04-29 2018-08-15 Ampleon Netherlands B.V. Semiconductor transistor comprising two electrically conductive shield elements
CN102184911A (zh) * 2011-04-08 2011-09-14 昆山华太电子科技有限公司 大功率高频器件密勒寄生电容屏蔽结构
US8906773B2 (en) * 2012-12-12 2014-12-09 Freescale Semiconductor, Inc. Integrated circuits including integrated passive devices and methods of manufacture thereof
US8981475B2 (en) * 2013-06-18 2015-03-17 International Business Machines Corporation Lateral diffusion metal oxide semiconductor (LDMOS)
KR102122593B1 (ko) * 2013-10-22 2020-06-15 삼성전자주식회사 반도체 소자
US9449969B1 (en) * 2015-06-03 2016-09-20 Futurewei Technologies, Inc. Device and method for a high isolation switch
CN106601722A (zh) * 2015-10-16 2017-04-26 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
JP6540528B2 (ja) 2016-02-04 2019-07-10 三菱電機株式会社 半導体装置及びその製造方法
US9899484B1 (en) * 2016-12-30 2018-02-20 Texas Instruments Incorporated Transistor with source field plates under gate runner layers
US10236573B2 (en) * 2017-06-20 2019-03-19 Qualcomm Incorporated On-chip coupling capacitor with patterned radio frequency shielding structure for lower loss
WO2022000269A1 (en) * 2020-06-30 2022-01-06 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device and fabrication method thereof
US12328927B2 (en) 2020-09-25 2025-06-10 Intel Coporation Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures

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JPS51111069A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device
JPS61168253A (ja) * 1985-01-19 1986-07-29 Sharp Corp 高耐圧ｍｏｓ電界効果半導体装置
US4805138A (en) * 1985-08-23 1989-02-14 Texas Instruments Incorporated An unerasable eprom cell
US4984200A (en) * 1987-11-30 1991-01-08 Hitachi, Ltd. Semiconductor circuit device having a plurality of SRAM type memory cell arrangement
JPH0777239B2 (ja) * 1988-09-22 1995-08-16 日本電気株式会社 浮遊ゲート型不揮発性半導体記憶装置
US5665991A (en) 1992-03-13 1997-09-09 Texas Instruments Incorporated Device having current ballasting and busing over active area using a multi-level conductor process
US6150722A (en) 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
US5468984A (en) * 1994-11-02 1995-11-21 Texas Instruments Incorporated ESD protection structure using LDMOS diodes with thick copper interconnect
JPH08172189A (ja) * 1994-12-20 1996-07-02 Nippondenso Co Ltd 高耐圧ｍｏｓ型電界効果トランジスタ
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
US5940721A (en) * 1995-10-11 1999-08-17 International Rectifier Corporation Termination structure for semiconductor devices and process for manufacture thereof
WO1998041071A1 (en) 1997-03-11 1998-09-17 Xemod, Inc. Hybrid module assembling method and apparatus
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
JP4322414B2 (ja) * 2000-09-19 2009-09-02 株式会社ルネサステクノロジ 半導体装置

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