CN100356580C - 高频半导体器件及制造方法 - Google Patents

高频半导体器件及制造方法 Download PDF

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Publication number
CN100356580C
CN100356580C CNB038048132A CN03804813A CN100356580C CN 100356580 C CN100356580 C CN 100356580C CN B038048132 A CNB038048132 A CN B038048132A CN 03804813 A CN03804813 A CN 03804813A CN 100356580 C CN100356580 C CN 100356580C
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China
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forming
gate structure
source region
semiconductor body
dielectric layer
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Expired - Fee Related
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CNB038048132A
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English (en)
Chinese (zh)
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CN1639871A (zh
Inventor
克里斯托弗·P.·卓根
韦恩·R.·博格尔
丹尼尔·J.·莱弥
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB038048132A 2002-02-28 2003-02-19 高频半导体器件及制造方法 Expired - Fee Related CN100356580C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/086,061 2002-02-28
US10/086,061 US6744117B2 (en) 2002-02-28 2002-02-28 High frequency semiconductor device and method of manufacture

Publications (2)

Publication Number Publication Date
CN1639871A CN1639871A (zh) 2005-07-13
CN100356580C true CN100356580C (zh) 2007-12-19

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Family Applications (1)

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CNB038048132A Expired - Fee Related CN100356580C (zh) 2002-02-28 2003-02-19 高频半导体器件及制造方法

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US (1) US6744117B2 (enExample)
EP (1) EP1479110A1 (enExample)
JP (1) JP2005519474A (enExample)
KR (1) KR100968058B1 (enExample)
CN (1) CN100356580C (enExample)
AU (1) AU2003211162A1 (enExample)
WO (1) WO2003075354A1 (enExample)

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SE522576C2 (sv) * 2001-03-09 2004-02-17 Ericsson Telefon Ab L M Effekt-LDMOS-transistor för radiofrekvens
DE10219116A1 (de) * 2002-04-29 2003-11-13 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Verbindungslagen sowie zugehörige Herstellungsverfahren
JP2007503717A (ja) * 2003-08-27 2007-02-22 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Ｌｄｍｏｓトランジスタを有する電子装置
SE0302809D0 (sv) * 2003-10-24 2003-10-24 Infineon Technologies Ag High frequency power transistor device, integrated circuit, and fabrication method thereof
SE0302810D0 (sv) * 2003-10-24 2003-10-24 Infineon Technologies Ag Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
US7026204B2 (en) * 2004-03-24 2006-04-11 Freescale Semiconductor, Inc. Transistor with reduced gate-to-source capacitance and method therefor
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
US7307314B2 (en) * 2004-06-16 2007-12-11 Cree Microwave Llc LDMOS transistor with improved gate shield
US20060049464A1 (en) 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
EP1717850A1 (en) * 2005-04-29 2006-11-02 STMicroelectronics S.r.l. Method of manufacturing a lateral power MOS transistor
US7432133B2 (en) * 2005-10-24 2008-10-07 Freescale Semiconductor, Inc. Plastic packaged device with die interface layer
US20070090545A1 (en) * 2005-10-24 2007-04-26 Condie Brian W Semiconductor device with improved encapsulation
US7435625B2 (en) * 2005-10-24 2008-10-14 Freescale Semiconductor, Inc. Semiconductor device with reduced package cross-talk and loss
US20070200233A1 (en) * 2005-12-14 2007-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structures with reduced coupling noise
US7368668B2 (en) * 2006-02-03 2008-05-06 Freescale Semiconductor Inc. Ground shields for semiconductors
KR100764930B1 (ko) * 2006-02-16 2007-10-09 충북대학교 산학협력단 고주파 집적 회로 장치 및 그 제조 방법
RU2338297C1 (ru) * 2007-01-16 2008-11-10 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Свч ldmos-транзистор
US20080258263A1 (en) * 2007-04-20 2008-10-23 Harry Yue Gee High Current Steering ESD Protection Zener Diode And Method
ATE543213T1 (de) * 2008-04-15 2012-02-15 Nxp Bv Hochfrequenz-feldeffekttransistor
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
EP2383786B1 (en) 2010-04-29 2018-08-15 Ampleon Netherlands B.V. Semiconductor transistor comprising two electrically conductive shield elements
CN102184911A (zh) * 2011-04-08 2011-09-14 昆山华太电子科技有限公司 大功率高频器件密勒寄生电容屏蔽结构
US8906773B2 (en) * 2012-12-12 2014-12-09 Freescale Semiconductor, Inc. Integrated circuits including integrated passive devices and methods of manufacture thereof
US8981475B2 (en) * 2013-06-18 2015-03-17 International Business Machines Corporation Lateral diffusion metal oxide semiconductor (LDMOS)
KR102122593B1 (ko) * 2013-10-22 2020-06-15 삼성전자주식회사 반도체 소자
US9449969B1 (en) * 2015-06-03 2016-09-20 Futurewei Technologies, Inc. Device and method for a high isolation switch
CN106601722A (zh) * 2015-10-16 2017-04-26 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
JP6540528B2 (ja) 2016-02-04 2019-07-10 三菱電機株式会社 半導体装置及びその製造方法
US9899484B1 (en) 2016-12-30 2018-02-20 Texas Instruments Incorporated Transistor with source field plates under gate runner layers
US10236573B2 (en) * 2017-06-20 2019-03-19 Qualcomm Incorporated On-chip coupling capacitor with patterned radio frequency shielding structure for lower loss
US12211912B2 (en) 2020-06-30 2025-01-28 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device and fabrication method thereof
US12328927B2 (en) 2020-09-25 2025-06-10 Intel Coporation Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures

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US5801091A (en) * 1992-03-13 1998-09-01 Texas Instruments Incorporated Method for current ballasting and busing over active device area using a multi-level conductor process
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
WO2001061758A1 (en) * 2000-02-18 2001-08-23 Intersil Corporation Lateral dmos improved breakdown structure and method
US6318622B1 (en) * 1997-03-11 2001-11-20 Xemod, Inc. High power hybrid modules assembly using vacuum oven for permanent electrical connections

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Patent Citations (4)

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US5801091A (en) * 1992-03-13 1998-09-01 Texas Instruments Incorporated Method for current ballasting and busing over active device area using a multi-level conductor process
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
US6318622B1 (en) * 1997-03-11 2001-11-20 Xemod, Inc. High power hybrid modules assembly using vacuum oven for permanent electrical connections
WO2001061758A1 (en) * 2000-02-18 2001-08-23 Intersil Corporation Lateral dmos improved breakdown structure and method

Also Published As

Publication number Publication date
AU2003211162A1 (en) 2003-09-16
EP1479110A1 (en) 2004-11-24
CN1639871A (zh) 2005-07-13
KR20040087325A (ko) 2004-10-13
US6744117B2 (en) 2004-06-01
KR100968058B1 (ko) 2010-07-08
WO2003075354A1 (en) 2003-09-12
JP2005519474A (ja) 2005-06-30
US20030160324A1 (en) 2003-08-28

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