JP2008537339A5 - - Google Patents
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- Publication number
- JP2008537339A5 JP2008537339A5 JP2008506717A JP2008506717A JP2008537339A5 JP 2008537339 A5 JP2008537339 A5 JP 2008537339A5 JP 2008506717 A JP2008506717 A JP 2008506717A JP 2008506717 A JP2008506717 A JP 2008506717A JP 2008537339 A5 JP2008537339 A5 JP 2008537339A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate conductor
- conductor portion
- device structure
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 37
- 239000004020 conductor Substances 0.000 claims 29
- 239000013078 crystal Substances 0.000 claims 19
- 238000009792 diffusion process Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/907,796 US7084462B1 (en) | 2005-04-15 | 2005-04-15 | Parallel field effect transistor structure having a body contact |
| PCT/US2006/013987 WO2006113395A2 (en) | 2005-04-15 | 2006-04-13 | Parallel field effect transistor structure having a body contact |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008537339A JP2008537339A (ja) | 2008-09-11 |
| JP2008537339A5 true JP2008537339A5 (enExample) | 2009-08-27 |
| JP4395192B2 JP4395192B2 (ja) | 2010-01-06 |
Family
ID=36710532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008506717A Expired - Fee Related JP4395192B2 (ja) | 2005-04-15 | 2006-04-13 | 本体コンタクトを有する並列電界効果トランジスタ構造体 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7084462B1 (enExample) |
| EP (1) | EP1872402B1 (enExample) |
| JP (1) | JP4395192B2 (enExample) |
| CN (1) | CN100495704C (enExample) |
| AT (1) | ATE454714T1 (enExample) |
| DE (1) | DE602006011595D1 (enExample) |
| TW (1) | TWI372461B (enExample) |
| WO (1) | WO2006113395A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8035140B2 (en) * | 2007-07-26 | 2011-10-11 | Infineon Technologies Ag | Method and layout of semiconductor device with reduced parasitics |
| US8921190B2 (en) | 2008-04-08 | 2014-12-30 | International Business Machines Corporation | Field effect transistor and method of manufacture |
| US7893494B2 (en) * | 2008-06-18 | 2011-02-22 | International Business Machines Corporation | Method and structure for SOI body contact FET with reduced parasitic capacitance |
| CN102148158B (zh) * | 2010-02-09 | 2013-03-27 | 中国科学院微电子研究所 | 一种体接触器件结构及其制造方法 |
| CN103258813B (zh) * | 2013-04-24 | 2016-08-24 | 上海华虹宏力半导体制造有限公司 | 部分耗尽soi mosfet的测试结构及其形成方法 |
| US8933746B1 (en) | 2013-07-10 | 2015-01-13 | Astronics Advanced Electronic Systems Corp. | Parallel FET solid state relay utilizing commutation FETs |
| FR3038775A1 (fr) | 2015-07-09 | 2017-01-13 | St Microelectronics Sa | Prise de contact substrat pour un transistor mos dans un substrat soi, en particulier fdsoi |
| US10096708B2 (en) | 2016-03-30 | 2018-10-09 | Stmicroelectronics Sa | Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate |
| FR3053834B1 (fr) * | 2016-07-05 | 2020-06-12 | Stmicroelectronics Sa | Structure de transistor |
| US10424664B2 (en) * | 2016-12-14 | 2019-09-24 | Globalfoundries Inc. | Poly gate extension source to body contact |
| US11948978B2 (en) * | 2020-04-24 | 2024-04-02 | Qualcomm Incorporated | Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage |
| CN112349784B (zh) * | 2020-11-05 | 2022-07-29 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
| CN113327983B (zh) * | 2021-05-26 | 2023-05-05 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5185280A (en) | 1991-01-29 | 1993-02-09 | Texas Instruments Incorporated | Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
| USH1435H (en) * | 1991-10-21 | 1995-05-02 | Cherne Richard D | SOI CMOS device having body extension for providing sidewall channel stop and bodytie |
| US5298773A (en) | 1992-08-17 | 1994-03-29 | United Technologies Corporation | Silicon-on-insulator H-transistor layout for gate arrays |
| US5317181A (en) | 1992-09-10 | 1994-05-31 | United Technologies Corporation | Alternative body contact for fully-depleted silicon-on-insulator transistors |
| US5635745A (en) * | 1994-09-08 | 1997-06-03 | National Semiconductor Corporation | Analog multiplexer cell for mixed digital and analog signal inputs |
| US5821769A (en) | 1995-04-21 | 1998-10-13 | Nippon Telegraph And Telephone Corporation | Low voltage CMOS logic circuit with threshold voltage control |
| US5821575A (en) | 1996-05-20 | 1998-10-13 | Digital Equipment Corporation | Compact self-aligned body contact silicon-on-insulator transistor |
| JP3638377B2 (ja) | 1996-06-07 | 2005-04-13 | 株式会社ルネサステクノロジ | 半導体装置 |
| US5811855A (en) | 1997-12-29 | 1998-09-22 | United Technologies Corporation | SOI combination body tie |
| TW432545B (en) | 1998-08-07 | 2001-05-01 | Ibm | Method and improved SOI body contact structure for transistors |
| US6387739B1 (en) | 1998-08-07 | 2002-05-14 | International Business Machines Corporation | Method and improved SOI body contact structure for transistors |
| US6323522B1 (en) * | 1999-01-08 | 2001-11-27 | International Business Machines Corporation | Silicon on insulator thick oxide structure and process of manufacture |
| US6154091A (en) | 1999-06-02 | 2000-11-28 | International Business Machines Corporation | SOI sense amplifier with body contact structure |
| US6399989B1 (en) | 1999-08-03 | 2002-06-04 | Bae Systems Information And Electronic Systems Integration Inc. | Radiation hardened silicon-on-insulator (SOI) transistor having a body contact |
| US6307237B1 (en) | 1999-12-28 | 2001-10-23 | Honeywell International Inc. | L-and U-gate devices for SOI/SOS applications |
| US6255694B1 (en) | 2000-01-18 | 2001-07-03 | International Business Machines Corporation | Multi-function semiconductor structure and method |
| US6433587B1 (en) | 2000-03-17 | 2002-08-13 | International Business Machines Corporation | SOI CMOS dynamic circuits having threshold voltage control |
| JP4614522B2 (ja) | 2000-10-25 | 2011-01-19 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| JP5001494B2 (ja) | 2001-08-28 | 2012-08-15 | セイコーインスツル株式会社 | 絶縁性基板上に形成された電界効果トランジスタ |
| US6905919B2 (en) | 2003-07-29 | 2005-06-14 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension |
-
2005
- 2005-04-15 US US10/907,796 patent/US7084462B1/en not_active Expired - Fee Related
-
2006
- 2006-04-04 TW TW095112005A patent/TWI372461B/zh active
- 2006-04-13 DE DE602006011595T patent/DE602006011595D1/de active Active
- 2006-04-13 EP EP06758334A patent/EP1872402B1/en not_active Not-in-force
- 2006-04-13 AT AT06758334T patent/ATE454714T1/de not_active IP Right Cessation
- 2006-04-13 JP JP2008506717A patent/JP4395192B2/ja not_active Expired - Fee Related
- 2006-04-13 CN CNB2006800085198A patent/CN100495704C/zh not_active Expired - Fee Related
- 2006-04-13 WO PCT/US2006/013987 patent/WO2006113395A2/en not_active Ceased