JP2019503085A5 - - Google Patents
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- Publication number
- JP2019503085A5 JP2019503085A5 JP2018538593A JP2018538593A JP2019503085A5 JP 2019503085 A5 JP2019503085 A5 JP 2019503085A5 JP 2018538593 A JP2018538593 A JP 2018538593A JP 2018538593 A JP2018538593 A JP 2018538593A JP 2019503085 A5 JP2019503085 A5 JP 2019503085A5
- Authority
- JP
- Japan
- Prior art keywords
- field
- oxide
- integrated circuit
- region
- drift region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 10
- 239000002019 doping agent Substances 0.000 claims 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 241000293849 Cordylanthus Species 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021201393A JP7429090B2 (ja) | 2016-01-21 | 2021-12-13 | 側壁誘電体を備えるフィールド緩和酸化物に自己整合されるドリフト領域注入 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/003,776 US9583612B1 (en) | 2016-01-21 | 2016-01-21 | Drift region implant self-aligned to field relief oxide with sidewall dielectric |
| US15/003,776 | 2016-01-21 | ||
| PCT/US2017/014581 WO2017127813A1 (en) | 2016-01-21 | 2017-01-23 | Drift region implant self-aligned to field relief oxide with sidewall dielectric |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021201393A Division JP7429090B2 (ja) | 2016-01-21 | 2021-12-13 | 側壁誘電体を備えるフィールド緩和酸化物に自己整合されるドリフト領域注入 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019503085A JP2019503085A (ja) | 2019-01-31 |
| JP2019503085A5 true JP2019503085A5 (enExample) | 2020-02-27 |
| JP7089144B2 JP7089144B2 (ja) | 2022-06-22 |
Family
ID=58056574
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018538593A Active JP7089144B2 (ja) | 2016-01-21 | 2017-01-23 | 側壁誘電体を備えるフィールド緩和酸化物に自己整合されるドリフト領域注入 |
| JP2021201393A Active JP7429090B2 (ja) | 2016-01-21 | 2021-12-13 | 側壁誘電体を備えるフィールド緩和酸化物に自己整合されるドリフト領域注入 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021201393A Active JP7429090B2 (ja) | 2016-01-21 | 2021-12-13 | 側壁誘電体を備えるフィールド緩和酸化物に自己整合されるドリフト領域注入 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US9583612B1 (enExample) |
| EP (1) | EP3430647A4 (enExample) |
| JP (2) | JP7089144B2 (enExample) |
| CN (1) | CN108475678B (enExample) |
| WO (1) | WO2017127813A1 (enExample) |
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| US10424647B2 (en) * | 2017-10-19 | 2019-09-24 | Texas Instruments Incorporated | Transistors having gates with a lift-up region |
| US10566200B2 (en) * | 2018-04-03 | 2020-02-18 | Texas Instruments Incorporated | Method of fabricating transistors, including ambient oxidizing after etchings into barrier layers and anti-reflecting coatings |
| US11152505B2 (en) * | 2018-06-28 | 2021-10-19 | Texas Instruments Incorporated | Drain extended transistor |
| US10707296B2 (en) | 2018-10-10 | 2020-07-07 | Texas Instruments Incorporated | LOCOS with sidewall spacer for different capacitance density capacitors |
| US10529812B1 (en) | 2018-10-10 | 2020-01-07 | Texas Instruments Incorporated | Locos with sidewall spacer for transistors and other devices |
| US11355596B2 (en) * | 2019-12-17 | 2022-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | High power device with self-aligned field plate |
| US11152381B1 (en) * | 2020-04-13 | 2021-10-19 | HeFeChip Corporation Limited | MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same |
| US11114140B1 (en) | 2020-04-23 | 2021-09-07 | HeFeChip Corporation Limited | One time programmable (OTP) bits for physically unclonable functions |
| US11437082B2 (en) | 2020-05-17 | 2022-09-06 | HeFeChip Corporation Limited | Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage |
| CN113410139B (zh) * | 2020-07-02 | 2025-06-03 | 台积电(中国)有限公司 | 半导体结构及其形成方法 |
| US11398552B2 (en) * | 2020-08-26 | 2022-07-26 | Vanguard International Semiconductor Corporation | High-voltage semiconductor device and method of forming the same |
| WO2022092035A1 (ja) * | 2020-10-29 | 2022-05-05 | ローム株式会社 | 半導体装置 |
| US12288796B2 (en) | 2021-01-27 | 2025-04-29 | Samsung Electronics Co., Ltd. | Semiconductor device and image sensor including the same |
| US11862670B2 (en) * | 2021-05-13 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method for manufacturing the same |
| US11594630B2 (en) | 2021-05-25 | 2023-02-28 | Texas Instruments Incorporated | Rugged LDMOS with reduced NSD in source |
| TWI792495B (zh) * | 2021-08-16 | 2023-02-11 | 立錡科技股份有限公司 | 功率元件及其製造方法 |
| US11876134B2 (en) * | 2021-09-29 | 2024-01-16 | Texas Instruments Incorporated | Transistor device with buffered drain |
| US12464761B2 (en) * | 2022-11-30 | 2025-11-04 | Texas Instruments Incorporated | LOCOS fillet for drain reduced breakdown in high voltage transistors |
| US20250040179A1 (en) * | 2023-07-30 | 2025-01-30 | Texas Instruments Incorporated | Semiconductor device with a high k field relief dielectric structure |
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-
2016
- 2016-01-21 US US15/003,776 patent/US9583612B1/en active Active
-
2017
- 2017-01-16 US US15/406,891 patent/US10497787B2/en active Active
- 2017-01-16 US US15/406,913 patent/US10096685B2/en active Active
- 2017-01-23 CN CN201780007246.3A patent/CN108475678B/zh active Active
- 2017-01-23 EP EP17742111.2A patent/EP3430647A4/en not_active Withdrawn
- 2017-01-23 JP JP2018538593A patent/JP7089144B2/ja active Active
- 2017-01-23 WO PCT/US2017/014581 patent/WO2017127813A1/en not_active Ceased
-
2019
- 2019-11-14 US US16/683,517 patent/US10861948B2/en active Active
-
2021
- 2021-12-13 JP JP2021201393A patent/JP7429090B2/ja active Active
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