CN108475678B - 自对准到具有侧壁电介质的场释放氧化物的漂移区注入 - Google Patents

自对准到具有侧壁电介质的场释放氧化物的漂移区注入 Download PDF

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CN108475678B
CN108475678B CN201780007246.3A CN201780007246A CN108475678B CN 108475678 B CN108475678 B CN 108475678B CN 201780007246 A CN201780007246 A CN 201780007246A CN 108475678 B CN108475678 B CN 108475678B
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oxide
region
layer
field
doped region
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CN108475678A (zh
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H·L·爱德华兹
B·胡
J·R·托德
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Texas Instruments Inc
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Texas Instruments Inc
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CN201780007246.3A 2016-01-21 2017-01-23 自对准到具有侧壁电介质的场释放氧化物的漂移区注入 Active CN108475678B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/003,776 US9583612B1 (en) 2016-01-21 2016-01-21 Drift region implant self-aligned to field relief oxide with sidewall dielectric
US15/003,776 2016-01-21
PCT/US2017/014581 WO2017127813A1 (en) 2016-01-21 2017-01-23 Drift region implant self-aligned to field relief oxide with sidewall dielectric

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CN108475678A CN108475678A (zh) 2018-08-31
CN108475678B true CN108475678B (zh) 2023-08-15

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