JP4395192B2 - 本体コンタクトを有する並列電界効果トランジスタ構造体 - Google Patents

本体コンタクトを有する並列電界効果トランジスタ構造体 Download PDF

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Publication number
JP4395192B2
JP4395192B2 JP2008506717A JP2008506717A JP4395192B2 JP 4395192 B2 JP4395192 B2 JP 4395192B2 JP 2008506717 A JP2008506717 A JP 2008506717A JP 2008506717 A JP2008506717 A JP 2008506717A JP 4395192 B2 JP4395192 B2 JP 4395192B2
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Japan
Prior art keywords
region
fet
gate conductor
conductor portion
single crystal
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Expired - Fee Related
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JP2008506717A
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Japanese (ja)
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JP2008537339A (ja
JP2008537339A5 (enExample
Inventor
ワーノック、ジェームズ、ディー
スミス、ジョージ、イー、サード
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

Landscapes

  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP2008506717A 2005-04-15 2006-04-13 本体コンタクトを有する並列電界効果トランジスタ構造体 Expired - Fee Related JP4395192B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/907,796 US7084462B1 (en) 2005-04-15 2005-04-15 Parallel field effect transistor structure having a body contact
PCT/US2006/013987 WO2006113395A2 (en) 2005-04-15 2006-04-13 Parallel field effect transistor structure having a body contact

Publications (3)

Publication Number Publication Date
JP2008537339A JP2008537339A (ja) 2008-09-11
JP2008537339A5 JP2008537339A5 (enExample) 2009-08-27
JP4395192B2 true JP4395192B2 (ja) 2010-01-06

Family

ID=36710532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008506717A Expired - Fee Related JP4395192B2 (ja) 2005-04-15 2006-04-13 本体コンタクトを有する並列電界効果トランジスタ構造体

Country Status (8)

Country Link
US (1) US7084462B1 (enExample)
EP (1) EP1872402B1 (enExample)
JP (1) JP4395192B2 (enExample)
CN (1) CN100495704C (enExample)
AT (1) ATE454714T1 (enExample)
DE (1) DE602006011595D1 (enExample)
TW (1) TWI372461B (enExample)
WO (1) WO2006113395A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8035140B2 (en) * 2007-07-26 2011-10-11 Infineon Technologies Ag Method and layout of semiconductor device with reduced parasitics
US8921190B2 (en) 2008-04-08 2014-12-30 International Business Machines Corporation Field effect transistor and method of manufacture
US7893494B2 (en) * 2008-06-18 2011-02-22 International Business Machines Corporation Method and structure for SOI body contact FET with reduced parasitic capacitance
CN102148158B (zh) * 2010-02-09 2013-03-27 中国科学院微电子研究所 一种体接触器件结构及其制造方法
CN103258813B (zh) * 2013-04-24 2016-08-24 上海华虹宏力半导体制造有限公司 部分耗尽soi mosfet的测试结构及其形成方法
US8933746B1 (en) 2013-07-10 2015-01-13 Astronics Advanced Electronic Systems Corp. Parallel FET solid state relay utilizing commutation FETs
FR3038775A1 (fr) 2015-07-09 2017-01-13 St Microelectronics Sa Prise de contact substrat pour un transistor mos dans un substrat soi, en particulier fdsoi
US10096708B2 (en) 2016-03-30 2018-10-09 Stmicroelectronics Sa Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate
FR3053834B1 (fr) * 2016-07-05 2020-06-12 Stmicroelectronics Sa Structure de transistor
US10424664B2 (en) * 2016-12-14 2019-09-24 Globalfoundries Inc. Poly gate extension source to body contact
US11948978B2 (en) * 2020-04-24 2024-04-02 Qualcomm Incorporated Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage
CN112349784B (zh) * 2020-11-05 2022-07-29 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
CN113327983B (zh) * 2021-05-26 2023-05-05 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

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Publication number Priority date Publication date Assignee Title
US5185280A (en) 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie
US5298773A (en) 1992-08-17 1994-03-29 United Technologies Corporation Silicon-on-insulator H-transistor layout for gate arrays
US5317181A (en) 1992-09-10 1994-05-31 United Technologies Corporation Alternative body contact for fully-depleted silicon-on-insulator transistors
US5635745A (en) * 1994-09-08 1997-06-03 National Semiconductor Corporation Analog multiplexer cell for mixed digital and analog signal inputs
US5821769A (en) 1995-04-21 1998-10-13 Nippon Telegraph And Telephone Corporation Low voltage CMOS logic circuit with threshold voltage control
US5821575A (en) 1996-05-20 1998-10-13 Digital Equipment Corporation Compact self-aligned body contact silicon-on-insulator transistor
JP3638377B2 (ja) 1996-06-07 2005-04-13 株式会社ルネサステクノロジ 半導体装置
US5811855A (en) 1997-12-29 1998-09-22 United Technologies Corporation SOI combination body tie
TW432545B (en) 1998-08-07 2001-05-01 Ibm Method and improved SOI body contact structure for transistors
US6387739B1 (en) 1998-08-07 2002-05-14 International Business Machines Corporation Method and improved SOI body contact structure for transistors
US6323522B1 (en) * 1999-01-08 2001-11-27 International Business Machines Corporation Silicon on insulator thick oxide structure and process of manufacture
US6154091A (en) 1999-06-02 2000-11-28 International Business Machines Corporation SOI sense amplifier with body contact structure
US6399989B1 (en) 1999-08-03 2002-06-04 Bae Systems Information And Electronic Systems Integration Inc. Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
US6307237B1 (en) 1999-12-28 2001-10-23 Honeywell International Inc. L-and U-gate devices for SOI/SOS applications
US6255694B1 (en) 2000-01-18 2001-07-03 International Business Machines Corporation Multi-function semiconductor structure and method
US6433587B1 (en) 2000-03-17 2002-08-13 International Business Machines Corporation SOI CMOS dynamic circuits having threshold voltage control
JP4614522B2 (ja) 2000-10-25 2011-01-19 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP5001494B2 (ja) 2001-08-28 2012-08-15 セイコーインスツル株式会社 絶縁性基板上に形成された電界効果トランジスタ
US6905919B2 (en) 2003-07-29 2005-06-14 Chartered Semiconductor Manufacturing Ltd. Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension

Also Published As

Publication number Publication date
WO2006113395A3 (en) 2007-03-08
EP1872402B1 (en) 2010-01-06
CN100495704C (zh) 2009-06-03
ATE454714T1 (de) 2010-01-15
JP2008537339A (ja) 2008-09-11
EP1872402A4 (en) 2008-06-11
TWI372461B (en) 2012-09-11
CN101142679A (zh) 2008-03-12
US7084462B1 (en) 2006-08-01
EP1872402A2 (en) 2008-01-02
DE602006011595D1 (de) 2010-02-25
WO2006113395A2 (en) 2006-10-26
TW200731531A (en) 2007-08-16

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