JP2005517620A5 - - Google Patents

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Publication number
JP2005517620A5
JP2005517620A5 JP2003567985A JP2003567985A JP2005517620A5 JP 2005517620 A5 JP2005517620 A5 JP 2005517620A5 JP 2003567985 A JP2003567985 A JP 2003567985A JP 2003567985 A JP2003567985 A JP 2003567985A JP 2005517620 A5 JP2005517620 A5 JP 2005517620A5
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JP
Japan
Prior art keywords
sio
plane
parallel
layer
pigment
Prior art date
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Application number
JP2003567985A
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English (en)
Japanese (ja)
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JP2005517620A (ja
JP4476629B2 (ja
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Application filed filed Critical
Priority claimed from PCT/EP2003/001323 external-priority patent/WO2003068868A2/en
Publication of JP2005517620A publication Critical patent/JP2005517620A/ja
Publication of JP2005517620A5 publication Critical patent/JP2005517620A5/ja
Application granted granted Critical
Publication of JP4476629B2 publication Critical patent/JP4476629B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003567985A 2002-02-18 2003-02-11 亜酸化ケイ素、二酸化ケイ素及び/又は炭化ケイ素の面平行な構造を製造する方法、当該方法によって得られる面平行な構造ならびにその使用 Expired - Lifetime JP4476629B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10206820 2002-02-18
DE10210743 2002-03-12
DE10227229 2002-06-18
EP02405649 2002-07-25
PCT/EP2003/001323 WO2003068868A2 (en) 2002-02-18 2003-02-11 Method of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof

Publications (3)

Publication Number Publication Date
JP2005517620A JP2005517620A (ja) 2005-06-16
JP2005517620A5 true JP2005517620A5 (enExample) 2006-03-30
JP4476629B2 JP4476629B2 (ja) 2010-06-09

Family

ID=27739210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003567985A Expired - Lifetime JP4476629B2 (ja) 2002-02-18 2003-02-11 亜酸化ケイ素、二酸化ケイ素及び/又は炭化ケイ素の面平行な構造を製造する方法、当該方法によって得られる面平行な構造ならびにその使用

Country Status (9)

Country Link
US (1) US7256425B2 (enExample)
EP (1) EP1476508A2 (enExample)
JP (1) JP4476629B2 (enExample)
KR (2) KR100948245B1 (enExample)
CN (1) CN1633477A (enExample)
AU (1) AU2003206875A1 (enExample)
CA (1) CA2474640A1 (enExample)
MX (1) MXPA04007992A (enExample)
WO (1) WO2003068868A2 (enExample)

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JP2005298907A (ja) * 2004-04-13 2005-10-27 Oike Ind Co Ltd 鱗片状メタルフレークの製造方法及び鱗片状メタルフレーク
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WO2006010720A2 (en) * 2004-07-26 2006-02-02 Ciba Specialty Chemicals Holding Inc. Reactive silicon suboxide flakes
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US7892643B2 (en) * 2004-09-30 2011-02-22 Cabot Corporation Metal and oxides thereof and methods to make same
JP4949266B2 (ja) * 2004-12-15 2012-06-06 チバ ホールディング インコーポレーテッド 金属酸化物の有機基材へのマイクロ波付着を使用する方法
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DE102005030862B4 (de) * 2005-07-01 2009-12-24 Sintec Keramik Gmbh Erstbenetzungshilfsmaterial für einen Verdampferkörper, seine Verwendung zum Herrichten der Verdampferfläche eines Verdampferkörpers und ein elektrisch beheizbarer keramischer Verdampferkörper
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WO2007060125A1 (en) * 2005-11-25 2007-05-31 Ciba Specialty Chemicals Holding Inc. Reactive silicon oxide flakes
US20080054270A1 (en) * 2006-09-05 2008-03-06 Yoshiyuki Suda Semiconductor memory device and the production method
CN100519822C (zh) * 2006-09-27 2009-07-29 宝山钢铁股份有限公司 有机预涂金属板上SiOx镀层的真空制备方法
DE102007059860A1 (de) * 2007-12-12 2009-06-18 Evonik Degussa Gmbh Schülpen aus pyrogen hergestelltem Siliziumdioxid
DE102008032781A1 (de) * 2008-07-11 2010-01-21 Klöckner Pentaplast GmbH & Co. KG Verpackungsfolie für Produktauthentifizierung, Authentifizierungsverfahren und -system
US9077029B2 (en) 2010-02-23 2015-07-07 Samsung Sdi Co., Ltd. Negative active material for rechargeable lithium battery and rechargeable lithium battery including the same
EP2865722B1 (en) * 2012-06-20 2019-03-13 NGK Insulators, Ltd. Porous plate-shaped filler, coating composition, heat-insulating film, and heat-insulating film structure
WO2014157160A1 (ja) * 2013-03-29 2014-10-02 信越化学工業株式会社 酸化珪素の製造装置及び製造方法
WO2014185745A1 (ko) 2013-05-16 2014-11-20 주식회사 엘지화학 Sio 제조 장치 및 방법
WO2015035066A1 (en) 2013-09-04 2015-03-12 President And Fellows Of Harvard College Growing films via sequential liquid/vapor phases
JP6423360B2 (ja) * 2013-11-19 2018-11-14 日本碍子株式会社 断熱膜、および断熱膜構造
EP3075719B1 (en) 2013-11-26 2020-04-22 NGK Insulators, Ltd. Porous material and heat insulating film
CA2835583A1 (fr) 2013-11-28 2015-05-28 Hydro-Quebec Methode de preparation de siox nano-structure, et son utilisation comme anode de batterie lithium-ion
CN105870157B (zh) * 2016-05-30 2019-03-12 深圳市华星光电技术有限公司 用于打印成膜的凹槽结构及其制作方法
CN111453737B (zh) * 2019-01-22 2021-08-03 成都博达爱福科技有限公司 一种由mq硅树脂制备氧化亚硅的方法
CN112322191B (zh) * 2020-12-02 2021-06-29 徐州威聚电子材料有限公司 一种液体抛光蜡及其制备方法
CN116332193B (zh) * 2023-05-18 2024-07-05 深圳凝石材料科技有限公司 烧结硅氧负极材料的方法

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