JP4476629B2 - 亜酸化ケイ素、二酸化ケイ素及び/又は炭化ケイ素の面平行な構造を製造する方法、当該方法によって得られる面平行な構造ならびにその使用 - Google Patents
亜酸化ケイ素、二酸化ケイ素及び/又は炭化ケイ素の面平行な構造を製造する方法、当該方法によって得られる面平行な構造ならびにその使用 Download PDFInfo
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- JP4476629B2 JP4476629B2 JP2003567985A JP2003567985A JP4476629B2 JP 4476629 B2 JP4476629 B2 JP 4476629B2 JP 2003567985 A JP2003567985 A JP 2003567985A JP 2003567985 A JP2003567985 A JP 2003567985A JP 4476629 B2 JP4476629 B2 JP 4476629B2
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Classifications
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- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
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- A61K8/00—Cosmetics or similar toiletry preparations
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- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/0015—Pigments exhibiting interference colours, e.g. transparent platelets of appropriate thinness or flaky substrates, e.g. mica, bearing appropriate thin transparent coatings
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/0015—Pigments exhibiting interference colours, e.g. transparent platelets of appropriate thinness or flaky substrates, e.g. mica, bearing appropriate thin transparent coatings
- C09C1/0021—Pigments exhibiting interference colours, e.g. transparent platelets of appropriate thinness or flaky substrates, e.g. mica, bearing appropriate thin transparent coatings comprising a core coated with only one layer having a high or low refractive index
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/0015—Pigments exhibiting interference colours, e.g. transparent platelets of appropriate thinness or flaky substrates, e.g. mica, bearing appropriate thin transparent coatings
- C09C1/0024—Pigments exhibiting interference colours, e.g. transparent platelets of appropriate thinness or flaky substrates, e.g. mica, bearing appropriate thin transparent coatings comprising a stack of coating layers with alternating high and low refractive indices, wherein the first coating layer on the core surface has the high refractive index
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C2200/00—Compositional and structural details of pigments exhibiting interference colours
- C09C2200/10—Interference pigments characterized by the core material
- C09C2200/1037—Interference pigments characterized by the core material the core consisting of an inorganic suboxide or a mixture thereof, e.g. SiOx or TiOx
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C2200/00—Compositional and structural details of pigments exhibiting interference colours
- C09C2200/30—Interference pigments characterised by the thickness of the core or layers thereon or by the total thickness of the final pigment particle
- C09C2200/301—Thickness of the core
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- C—CHEMISTRY; METALLURGY
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Description
a)可動支持体に剥離剤を蒸着させて剥離剤層を製造する工程と、
b)剥離剤層にSiOy層を蒸着させる工程と、
c)溶媒中で剥離剤層を溶解させる工程と、
d)SiOyを溶媒から分別する工程と
を含み、工程b)で、SiOy層を、SiとSiO2との重量比が好ましくは0.15:1〜0.75:1の範囲であり、特にSiとSiO2との化学量論的混合物であるSi及びSiO2の混合物、SiOy又はそれらの混合物を含む仕込み原料が収容されている蒸発器から蒸着させ、
工程c)を、工程a)及びb)での圧力よりも高く、かつ大気圧よりも低い圧力で実施し、
この方法によって得られるSiOyの面平行な構造が、好ましくは20〜2000nm、特に100〜350nmの範囲の厚さを有し、面平行な構造の表面積に対する厚さの比が好ましくは0.01μm-1未満である方法によって解決される。これによって製造される面平行な構造は、高い厚さの均一性によって特徴づけられている。
Si+SiO2→2SiO
によって一酸化ケイ素を製造するそのもの公知の方法を、本発明にしたがって、SiOの蒸発と組み合わせる。この目的のために特別に設定された蒸発器では、微細なケイ素と石英粉末との好ましくは化学量論的な混合物が、たとえば、高真空下で約1450℃まで加熱される。反応生成物は一酸化ケイ素ガスである。一酸化ケイ素を収集し、後の段階でそれを蒸発させるために粉砕する代りに、真空中での化学反応から生じる一酸化ケイ素蒸気を通過中の支持体に直接当てると、そこでSiOとして凝縮する。したがって、別工程でのSiOの別々の製造は不要である。また、非化学量論的混合物を使用することが可能である。しかし、反応後、SiO2又はSiいずれかの残渣が残る。過剰なSiO2を有するこのような非化学量論的混合物が使用される場合、後に残る過剰分が、蒸発器ソースの壁に対して固体の保護絶縁層を形成することが利点である。
基本的な点でUS6270840と同様に構成されている真空系又は代替としてのバッチ系において、蒸発器から順に、剥離剤として塩化ナトリウム(NaCl)を約900℃で、SiとSiO2との反応生成物として一酸化ケイ素(SiO)を1350〜1550℃で蒸発させた。NaClの層厚さは通常30〜40nmであり、SiOの層厚さは、最終生成物の使用目的に依存して20〜2000nm、この場合は200nmであった。抵抗加熱式蒸発器は、公知の技術にしたがって、作動幅にわたって良好な均一さが得られるように構成されていた。蒸発を約0.02Paで実施して、毎分NaCl約11g及びSiO約72gに達した。剥離剤の溶解によって後で層を分別させるために、蒸着が実施された支持体に約3000Paで脱イオン水を吹き付け、スクレーパを使用する機械的支援及び超音波によって処理した。NaClは溶液に入り、不溶性であるSiOy層がフレークに砕散した。溶解チャンバから懸濁液を連続的に取り出し、大気圧で、ろ過によって濃縮し、脱イオン水で数回すすぎ、存在するNa+及びCl-イオンを除去した。これに続き、乾燥工程及び(SiOyをSiO2に酸化させるため)ばら材料の形態の面平行なSiOy構造を、700℃に加熱された空気が通されるオーブン中、700℃で2時間加熱する工程を実施した。冷ましたのち、微粉砕及び空気篩による選別を実施した。生成物は、さらなる使用のために送り出すことができる。
蒸着工程及び溶解工程は、市販の一酸化ケイ素、ケイ素及び二酸化ケイ素の混合物を蒸発器に充填したことを除き、例Iと同じであった。この混合物を約1450℃で蒸発させると、存在するSiOが直接蒸発し、Si及びSiO2の一部が同時に反応してSiOを形成した。得られた蒸気を通過中の支持体に当て、そこで凝縮させた。Na+及びCl-イオンを洗い流したのち、ろ過によって固体を濃縮した。残留水分を約25%含有する、まだ湿潤しているろ過した材料を、市販のベルトフリーザ上−5℃で、厚さ5mmの層の形態に凍結させ、市販の凍結乾燥ベルトシステムで処理した。水の三重点よりも低い氷のゆっくりな昇華のおかげで、SiOy構造は、蒸発法とは異なって、飛沫同伴せず、塊を形成する傾向がなかった。2時間後、乾燥形態で吐き出され、それを空気中800℃でSiO2に酸化させ、冷ましたち、粉砕及び空気篩の工程に送り出した。
TiO2(基材:SiO2、層:TiO2)、(SnO2)TiO2、Fe2O3、Fe2O3・TiO2(基材:SiO2:Fe2O3とTiO2との混合層)、TiO2/Fe2O3(基材:SiO2:第一の層:TiO2:第二の層:Fe2O3)、TiO2/ベルリンブルー、TiO2/Cr2O3、TiO2/FeTiO3、TiO2/SiO2/TiO2、(SnO2)TiO2/SiO2/TiO2、TiO2/SiO2/TiO2/SiO2/TiO2又はTiO2/SiO2/Fe2O3。
例Iで製造した面平行なSiOy構造を、乾燥させたのち、気密反応器に入れ、そこにアルゴンとアセチレンとの混合物を通しながら、850℃の温度まで加熱した。作業圧力は1バールであった。
2リットルの容量を有し、例Iで調製し、事前に乾燥させておいた面平行なSiOy構造のばら材料20gを含有する電気加熱式反応器に、900℃のアルゴン気流を、ばら材料がその温度に達するまで加えた。結果として、ばら材料に吸着された水の単分子層が脱着し、アルゴン気流によって運び出された。
ばら材料(適切な場合には攪拌してもよい)から出るアルゴンが、進入する熱気に対して10℃未満の温度低下を示すとただちに、温度を850℃に維持しながら5容量%のアセチレンをアルゴンと混合した。このガスを、ばら材料のいくつかの部位に導入し、内径2mmのINCONEL(商標)チューブを含むマニホルドによって供給した。アセチレンのマスフローは毎時1モルであった。
事前の試行での実験によって有利であることがわかっていた2時間の処理時間ののち、アセチレン気流を遮断し、その後、加熱をオフにした状態で、純粋なアルゴンによるフラッシュを、ガス出口温度が500℃未満に下がるまでさらに10分間実施した。得られた生成物は、1平方あたり50000オーム未満の表面抵抗率を示した。フレークは空気中で加熱されると非導電性になるため、表面導電性は、極めて薄い炭素層によって生じると推測された。
加熱を制御しながらアルゴン供給を400℃の空気の供給に代え、それを15分間維持した。面平行な構造中の残留SiOyがSiO2に酸化した。さらに15分後、室温の冷気をばら材料に通した。さらに15分後、ほぼ室温で生成物を取り出した。
(b)たとえばGB2012668、EP−A−355962ならびにUS−A−3290203、3681179、3776805及び4095013に記載されている種々の構造のソーラーエネルギー制御膜、
(c)たとえばUS−A−4645714に記載されている耐食性銀被覆ミラー及びソーラーリフレクタ、
(d)たとえばUS−A−5564843に記載されている反射プリント付きラベル、
(e)たとえばUS−A−5372889、5426204、5683804及び5618626に記載されているUV吸収ガラス及びガラスコーティング、
(f)太陽のIR線を遮断して、たとえば温室の過熱を防ぐための農業用フィルム、
(g)たとえばWO92/01557、JP75−33286、93−143668、95−3217及び96−143831ならびにUS−A−5643676に記載されている膜/うわぐすり、
(h)たとえばJP80−40018、90−192118、90−335037、90−335038、92−110128及び94−127591ならびにUS−A−5618863に記載されている防風スクリーン及び中間層、
(i)たとえばWO97/32225ならびにUS−A−4871784及び5217794に記載されている光学膜、
(j)たとえばUS−A−5814367に記載されている、軍備の発光赤外線(IR)エネルギーを減少又は変化させてIRセンサ及び/又はIR誘導兵器に対するその感受性を下げるための膜。
基本的な点でUS6270840に記載されているシステムと同様に構成されている真空システムにおいて、蒸発器から順に、剥離剤として塩化ナトリウム(NaCl)を約900℃で、SiとSiO2との反応生成物として一酸化ケイ素(SiO)を1350〜1550℃で蒸発させた。NaClの層厚さは通常30〜40nmであり、SiOyの層厚さは、最終生成物の使用目的に依存して100〜2000nm、この場合は200nmであった。蒸発を約0.02Paで実施して、毎分NaCl約11g及びSiO約72gに達した。剥離剤の溶解によって後で層を分離させるために、蒸着が実施された支持体に約3000Paで脱イオン水を吹き付け、スクレーパを使用する機械的支援及び超音波によって処理した。NaClは溶解し、不溶性であるSiOy層がフレークに砕散した。溶解チャンバから懸濁液を連続的に取り出し、大気圧で、ろ過によって濃縮し、脱イオン水で数回すすぎ、存在するNa+及びCl-イオンを除去した。これに続き、乾燥工程及び(SiOyをSiO2に酸化させるため)ばら材料の形態の面平行なSiOy構造を、700℃に加熱された空気が通されるオーブン中、700℃で2時間加熱する工程を実施した。冷ましたのち、微粉砕及び空気篩による選別を実施した。生成物は、さらなる使用のために送り出すことができる。
蒸着工程及び溶解工程は、市販の一酸化ケイ素、ケイ素及び二酸化ケイ素の混合物を蒸発器に充填したことを除き、例1と同じであった。この混合物を約1450℃で蒸発させると、存在するSiOが直接蒸発し、Si及びSiO2の一部が同時に反応してSiOを形成した。得られた蒸気を通過中の支持体に当て、そこで凝縮させた。Na+及びCl-イオンを洗い流したのち、ろ過によって固体を濃縮した。残留水分を約25%含有する、まだ湿潤しているろ過した材料を、市販のベルトフリーザ上−5℃で、厚さ5mmの層の形態に凍結させ、市販の凍結乾燥ベルトシステムで処理した。水の三重点よりも低い氷のゆっくりな昇華のおかげで、SiOy構造は、蒸発法とは異なって、飛沫同伴せず、塊を形成する傾向がなかった。2時間後、乾燥形態で出現し、それを空気中800℃でSiO2に酸化させ、冷ましたのち、粉砕及び空気篩の工程に送り出した。
例1で製造した面平行なSiOy構造を、乾燥させたのち、気密反応器に入れ、そこにアルゴンとアセチレンとの混合物を通しながら、850℃の温度まで加熱した。作業圧力は1バールであった。
a)例3a〜3cで得られた顔料を、湿式化学法による公知の方法で、二酸化チタンでコーティングした。
以下の組成を有するリップスティックベース
Claims (19)
- SiOy(1.1≦y≦1.8)の面平行なフレーク構造を製造する方法であって、
a)可動支持体に剥離剤を蒸着させて剥離剤層を製造する工程と、
b)前記剥離剤層にSiOy層を蒸着させる工程と、
c)溶媒中で前記剥離剤層を溶解させる工程と、
d)前記SiOyを前記溶媒から分別する工程と
を含み、工程b)で、前記SiOy層を、SiとSiO2との重量比が0.15:1〜0.75:1の範囲である、SiとSiO2との混合物、SiOy又はそれらの混合物を含む仕込み原料が収容されている蒸発器から蒸着させ、
工程c)を、工程a)及びb)での圧力よりも高く、かつ大気圧よりも低い圧力で実施する方法。 - 工程b)で、前記SiOy層を、1300℃を超える温度でのSiとSiO2との混合物の反応によって前記蒸発器中で製造された一酸化ケイ素蒸気から形成する、請求項1記載の方法。
- 請求項1又は2にしたがって得られる、SiOy(1.1≦y≦1.8)の面平行なフレーク。
- SiOy粒子が、長さ2μm〜5mm、幅2μm〜2mm、厚さ20nm〜2μmであり、長さ対厚さの比が少なくとも2:1であり、SiOyの粒子が、二つの平行な面を有し、それらの面の間の距離が前記粒子の最短軸である、SiOy(1.1≦y≦1.8)の面平行なフレーク。
- 二酸化ケイ素の面平行なフレークを製造する方法であって、請求項1記載の工程a)〜d)、ならびに
e)工程d)で分別したSiOyの面平行な構造を、少なくとも200℃の温度の酸素含有ガスを使用して酸化させるさらなる工程を含む方法。 - 工程e)ののち、
f)他の有機化合物に対するカップリング性を得るために、又は親水性、疎水性又は帯電防止性の表面を製造するために、少なくとも1種の有機シラン化合物及び/又は少なくとも1種のフッ素含有有機化合物によって二酸化ケイ素の面平行なフレークの浸漬、吹付け又は蒸気処理を実施する工程をさらに含む、請求項5記載の方法。 - 請求項5又は6にしたがって得ることができる、20〜2000nmの範囲の厚さを有する二酸化ケイ素の面平行なフレーク。
- SiOyの面平行なフレークを浸炭する方法であって、請求項1記載の工程a)〜d)、ならびに
g)工程d)にしたがって分別したSiOyの面平行なフレークを、500〜1500℃で、アルキン、アルカン、アルケン、芳香族化合物及びそれらの混合物から選択される炭素含有ガスと反応させ、SiO y の5〜90重量%が反応して、SiCを形成するさらなる工程を含む方法。 - 20〜2000nmの範囲の厚さを有する、請求項8記載の方法によって得ることができる面平行なフレーク顔料。
- 炭化ケイ素(SiC)を含む層をSiOz(0.95≦z≦2)基材の表面に含む、SiO z の5〜90重量%が反応して、SiCを形成した面平行なSiOz基材に基づく面平行なフレーク顔料。
- 表面コーティング又は分散層において、そのような表面コーティング又は分散液の表面の耐磨耗性及び耐衝撃性を高めるための、請求項3、4及び7のいずれか1項記載の面平行なフレークの使用。
- コーティング中で8〜9のモース硬さを有する耐食添加物としての、又は赤外線で選択的に反射する性質をコーティング組成物中に得るための耐食添加物としての、請求項9又は10記載の浸炭された面平行なフレークの使用。
- 1.65を超える屈折率を有する誘電体のさらなる層を含む、請求項10記載のフレーク顔料。
- 高分子量有機材料と、前記高分子量有機材料に基づいて0.01〜80重量%の、請求項10又は13記載の顔料とを含む組成物。
- そのものの全重量に基づいて、請求項10又は13記載の顔料0.0001〜90重量%と化粧品に適したキャリヤ材料10〜99.9999重量%とを含む化粧品調製物又は配合物。
- インクジェット印刷における、捺染のための、表面コーティング、印刷インク、プラスチック、化粧品、セラミックス及びガラスのためのうわぐすりを着色するための、請求項10又は13記載の顔料の使用。
- 炭化ケイ素(SiC)及び窒化ケイ素(Si3N4)を含む層をSiOz(0.95≦z≦2)基材の表面に含む、SiO z の5〜90重量%が反応して、SiC又はSi 3 N 4 を形成した面平行なSiOz基材に基づく面平行なフレーク顔料。
- 窒化ケイ素(Si3N4)を含む層をSiOz(0.95≦z≦2)基材の表面に含む、SiO z の5〜90重量%が反応して、SiC又はSi 3 N 4 を形成した面平行なSiOz基材に基づく面平行なフレーク顔料。
- 少なくとも一つのSiOz(0.95≦z≦2)層を含む面平行なフレーク顔料であって、炭化ケイ素(SiC)を含む層を前記SiOz層の上面及び側面に含む、SiO z の5〜90重量%が反応して、SiCを形成した面平行なフレーク顔料。
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PCT/EP2003/001323 WO2003068868A2 (en) | 2002-02-18 | 2003-02-11 | Method of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof |
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US (1) | US7256425B2 (ja) |
EP (1) | EP1476508A2 (ja) |
JP (1) | JP4476629B2 (ja) |
KR (2) | KR100948245B1 (ja) |
CN (1) | CN1633477A (ja) |
AU (1) | AU2003206875A1 (ja) |
CA (1) | CA2474640A1 (ja) |
MX (1) | MXPA04007992A (ja) |
WO (1) | WO2003068868A2 (ja) |
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JP2006505636A (ja) | 2002-10-16 | 2006-02-16 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 酸化ケイ素ベースの干渉顔料 |
CA2495007A1 (en) * | 2002-11-13 | 2004-05-27 | Ciba Specialty Chemicals Holding Inc. | Novel interference pigments |
JP2006509088A (ja) * | 2002-12-10 | 2006-03-16 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | アルミニウムをベースとするフレーク状顔料 |
JP4751316B2 (ja) | 2003-01-17 | 2011-08-17 | チバ ホールディング インコーポレーテッド | ナノ粒子を含有する多孔質無機材料またはマトリックス材料の製造方法 |
EP1585792B1 (en) * | 2003-01-23 | 2007-04-11 | Ciba SC Holding AG | Platelet-shaped pigments |
DE10352627A1 (de) * | 2003-11-11 | 2005-06-09 | Merck Patent Gmbh | Feinteilige harte Formkörper für abrasionsstabile Polymermatrizen |
JP2005298905A (ja) * | 2004-04-13 | 2005-10-27 | Oike Ind Co Ltd | 鱗片状メタルフレーク及び鱗片状メタルフレークの製造方法 |
JP2005298907A (ja) * | 2004-04-13 | 2005-10-27 | Oike Ind Co Ltd | 鱗片状メタルフレークの製造方法及び鱗片状メタルフレーク |
JP2007537203A (ja) * | 2004-05-12 | 2007-12-20 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 抗菌性酸化ケイ素フレーク |
JP2008506801A (ja) * | 2004-07-16 | 2008-03-06 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 発光性シリコン酸化物フレーク |
JP2008507471A (ja) * | 2004-07-26 | 2008-03-13 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 反応性シリコン亜酸化物フレーク |
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US7892643B2 (en) * | 2004-09-30 | 2011-02-22 | Cabot Corporation | Metal and oxides thereof and methods to make same |
JP4949266B2 (ja) * | 2004-12-15 | 2012-06-06 | チバ ホールディング インコーポレーテッド | 金属酸化物の有機基材へのマイクロ波付着を使用する方法 |
GB0502166D0 (en) * | 2005-02-02 | 2005-03-09 | Effectology Ltd | Ink-jet printing process |
JP4890800B2 (ja) | 2005-06-29 | 2012-03-07 | スリーエム イノベイティブ プロパティズ カンパニー | 透明波長選択性再帰反射体 |
DE102005030862B4 (de) * | 2005-07-01 | 2009-12-24 | Sintec Keramik Gmbh | Erstbenetzungshilfsmaterial für einen Verdampferkörper, seine Verwendung zum Herrichten der Verdampferfläche eines Verdampferkörpers und ein elektrisch beheizbarer keramischer Verdampferkörper |
CN101282804B (zh) | 2005-08-12 | 2012-03-21 | 唐维科(1198)公司 | 制备金属薄片的方法 |
GB0516968D0 (en) * | 2005-08-18 | 2005-09-28 | Dunwilco 1198 Ltd | Process |
KR20080070861A (ko) | 2005-11-17 | 2008-07-31 | 시바 홀딩 인크 | 플레이크형 입자의 제조 방법 |
WO2007060125A1 (en) * | 2005-11-25 | 2007-05-31 | Ciba Specialty Chemicals Holding Inc. | Reactive silicon oxide flakes |
US20080054270A1 (en) * | 2006-09-05 | 2008-03-06 | Yoshiyuki Suda | Semiconductor memory device and the production method |
CN100519822C (zh) * | 2006-09-27 | 2009-07-29 | 宝山钢铁股份有限公司 | 有机预涂金属板上SiOx镀层的真空制备方法 |
DE102007059860A1 (de) * | 2007-12-12 | 2009-06-18 | Evonik Degussa Gmbh | Schülpen aus pyrogen hergestelltem Siliziumdioxid |
DE102008032781A1 (de) * | 2008-07-11 | 2010-01-21 | Klöckner Pentaplast GmbH & Co. KG | Verpackungsfolie für Produktauthentifizierung, Authentifizierungsverfahren und -system |
US9077029B2 (en) | 2010-02-23 | 2015-07-07 | Samsung Sdi Co., Ltd. | Negative active material for rechargeable lithium battery and rechargeable lithium battery including the same |
WO2013191263A1 (ja) * | 2012-06-20 | 2013-12-27 | 日本碍子株式会社 | 多孔質板状フィラー、コーティング組成物、断熱膜、および断熱膜構造 |
WO2014157160A1 (ja) * | 2013-03-29 | 2014-10-02 | 信越化学工業株式会社 | 酸化珪素の製造装置及び製造方法 |
CN104854027B (zh) | 2013-05-16 | 2017-07-18 | Lg化学株式会社 | 用于制备SiO的设备与方法 |
WO2015035066A1 (en) | 2013-09-04 | 2015-03-12 | President And Fellows Of Harvard College | Growing films via sequential liquid/vapor phases |
JP6423360B2 (ja) * | 2013-11-19 | 2018-11-14 | 日本碍子株式会社 | 断熱膜、および断熱膜構造 |
JP6407887B2 (ja) | 2013-11-26 | 2018-10-17 | 日本碍子株式会社 | 多孔質材料及び断熱膜 |
CA2835583A1 (fr) * | 2013-11-28 | 2015-05-28 | Hydro-Quebec | Methode de preparation de siox nano-structure, et son utilisation comme anode de batterie lithium-ion |
CN105870157B (zh) * | 2016-05-30 | 2019-03-12 | 深圳市华星光电技术有限公司 | 用于打印成膜的凹槽结构及其制作方法 |
CN111453737B (zh) * | 2019-01-22 | 2021-08-03 | 成都博达爱福科技有限公司 | 一种由mq硅树脂制备氧化亚硅的方法 |
CN112322191B (zh) * | 2020-12-02 | 2021-06-29 | 徐州威聚电子材料有限公司 | 一种液体抛光蜡及其制备方法 |
CN116332193B (zh) * | 2023-05-18 | 2024-07-05 | 深圳凝石材料科技有限公司 | 烧结硅氧负极材料的方法 |
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-
2003
- 2003-02-11 WO PCT/EP2003/001323 patent/WO2003068868A2/en active Application Filing
- 2003-02-11 AU AU2003206875A patent/AU2003206875A1/en not_active Abandoned
- 2003-02-11 US US10/504,412 patent/US7256425B2/en not_active Expired - Fee Related
- 2003-02-11 EP EP03704586A patent/EP1476508A2/en not_active Withdrawn
- 2003-02-11 KR KR1020047012847A patent/KR100948245B1/ko not_active IP Right Cessation
- 2003-02-11 CN CNA03803980XA patent/CN1633477A/zh active Pending
- 2003-02-11 MX MXPA04007992A patent/MXPA04007992A/es not_active Application Discontinuation
- 2003-02-11 JP JP2003567985A patent/JP4476629B2/ja not_active Expired - Lifetime
- 2003-02-11 CA CA002474640A patent/CA2474640A1/en not_active Abandoned
- 2003-06-16 KR KR1020047020641A patent/KR100993133B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1476508A2 (en) | 2004-11-17 |
US20050161678A1 (en) | 2005-07-28 |
KR20050021983A (ko) | 2005-03-07 |
US7256425B2 (en) | 2007-08-14 |
CN1633477A (zh) | 2005-06-29 |
KR100948245B1 (ko) | 2010-03-19 |
AU2003206875A1 (en) | 2003-09-04 |
WO2003068868A2 (en) | 2003-08-21 |
CA2474640A1 (en) | 2003-08-21 |
MXPA04007992A (es) | 2004-11-26 |
KR20040091645A (ko) | 2004-10-28 |
KR100993133B1 (ko) | 2010-11-10 |
WO2003068868A3 (en) | 2003-11-13 |
JP2005517620A (ja) | 2005-06-16 |
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