JP2005347728A - フリップチップ用窒化物半導体発光素子 - Google Patents
フリップチップ用窒化物半導体発光素子 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 152
- 239000004065 semiconductor Substances 0.000 title claims abstract description 148
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 204
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 4
- 230000003014 reinforcing effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1401—Structure
- H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
本発明は、優れた電気的特性と優れた輝度を有するフリップチップ用窒化物半導体発光素子を提供する。
【解決手段】
窒化物単結晶成長のための透光性基板31と、透光性基板31上に形成されたn型窒化物半導体層32と、n型窒化物半導体層32上に形成された活性層33と、活性層33上に形成されたp型窒化物半導体層34と、p型窒化物半導体層34上に形成され、p型窒化物半導体層34の露出した複数のオープン領域を有するメッシュ(mesh)構造から成るメッシュ型誘電体層35と、メッシュ型誘電体層35、及び、p型窒化物半導体層34の露出したオープン領域上に形成された高反射性オーミックコンタクト層36と、高反射性オーミックコンタクト層36、及び、n型窒化物半導体層32上に夫々形成された、p側ボンディング電極39b、及び、n側電極39aとを有する。
【選択図】 図2
Description
11 サファイア基板
12、32、42 n型窒化物半導体層
13、33、43 活性層
14、34、44 p型窒化物半導体層
15 オーミックコンタクト層
16、47 金属バリア層
19a、19b 電極
20、50 フリップチップ発光装置
21 支持体用基板
22a、22b リードパターン
24a、24b 導電性バンプ
31、41 透光性基板
35、45 メッシュ型誘電体層
36、46 高反射性オーミックコンタクト層
39a、49a n側電極
39b、49b p側ボンディング電極
L1、L2 光
Claims (12)
- 窒化物単結晶成長のための透光性基板と、
前記透光性基板上に形成されたn型窒化物半導体層と、
前記n型窒化物半導体層上に形成された活性層と、
前記活性層上に形成されたp型窒化物半導体層と、
前記p型窒化物半導体層上に形成され、前記p型窒化物半導体層の露出した、複数のオープン領域を有するメッシュ構造から成るメッシュ型誘電体層と、
前記メッシュ型誘電体層、及び、前記p型窒化物半導体層の露出したオープン領域上に形成された高反射性オーミックコンタクト層と、
前記高反射性オーミックコンタクト層、及び、前記n型窒化物半導体層上に夫々形成された、p側ボンディング電極、及び、n側電極とを備えること、
を特徴とするフリップチップ用窒化物半導体発光素子。 - 基板上に形成されたn型、及び、p型窒化物半導体層を備えるフリップチップ用窒化物半導体発光素子において、
前記p型窒化物半導体層上に形成され、前記p型窒化物半導体層の露出した複数のオープン領域を有するメッシュ構造から成るメッシュ型誘電体層と、
前記メッシュ型誘電体層上に形成された高反射性オーミックコンタクト層と、
前記高反射性オーミックコンタクト層上に形成されたp側ボンディング電極とを備えること、
を特徴とするフリップチップ用窒化物半導体発光素子。 - 前記メッシュ型誘電体層のオープン領域面積の和は、前記p型窒化物半導体層の上面の全面積の30%以上であること、
を特徴とする請求項1又は2に記載のフリップチップ用窒化物半導体発光素子。 - 前記メッシュ型誘電体層の屈折率は、前記p型窒化物半導体層の屈折率より低いこと、
を特徴とする請求項1から3のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記メッシュ型誘電体層は、
Si、Zr、Ta、Ti、In、Sn、Mg、及び、Alから成る群から選択された元素を有する酸化物、又は、窒化物から成ること、
を特徴とする請求項1から5のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記高反射性オーミックコンタクト層の反射率は、70%以上であること、
を特徴とする請求項1から6のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記高反射性オーミックコンタクト層は、
Ag、Ni、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Au、及び、その組合せから成る群から選択された物質から成る、少なくとも一つの層を備えること、
を特徴とする請求項1から7のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記高反射性オーミックコンタクト層は、
Ni、Pd、Ir、Pt、及び、Znから成る群から選択された物質から成る第1層と、
前記第1層上に形成され、Ag、及び、Alから成る群から選択された物質から成る第2層とを備えること、
を特徴とする請求項1から8のいずれか一つに記載の窒化物半導体発光素子。 - 前記高反射性オーミックコンタクト層は、
Niから成る第1層と、
前記第1層上に形成されたAgから成る第2層と、
前記第2層上に形成されたPtから成る3層とを備えること、
を特徴とする請求項1から8のいずれか一つに記載の窒化物半導体発光素子。 - 前記高反射性オーミックコンタクト層を覆う金属バリア層を、さらに備えること、
を特徴とする請求項1から8のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記金属バリア層は、
Ni、Al、Cu、Cr、Ti、及び、その組合せから成る群から選択された物質から成る、少なくとも一つの層を備えること、
を特徴とする請求項1から11のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。
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KR1020040040355A KR100631840B1 (ko) | 2004-06-03 | 2004-06-03 | 플립칩용 질화물 반도체 발광소자 |
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JP2005347728A true JP2005347728A (ja) | 2005-12-15 |
JP4043461B2 JP4043461B2 (ja) | 2008-02-06 |
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Cited By (13)
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US20050269588A1 (en) | 2005-12-08 |
JP4043461B2 (ja) | 2008-02-06 |
US7294864B2 (en) | 2007-11-13 |
KR100631840B1 (ko) | 2006-10-09 |
KR20050115078A (ko) | 2005-12-07 |
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