CN111446338B - 发光二极管 - Google Patents
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- CN111446338B CN111446338B CN201910042124.9A CN201910042124A CN111446338B CN 111446338 B CN111446338 B CN 111446338B CN 201910042124 A CN201910042124 A CN 201910042124A CN 111446338 B CN111446338 B CN 111446338B
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Abstract
发光二极管包含第一型半导体层、主动层、第二型半导体层、图案化电极层、平坦化层及反射层。主动层配置于第一型半导体层上。第二型半导体层配置于主动层上,第二型半导体层包含第一表面及第二表面,其中第一表面面对主动层,第二表面具有第一算术平均粗糙度。图案化电极层配置于第二型半导体层的第二表面上,并暴露出部分第二型半导体层。平坦化层配置于第二型半导体层的露出部分上,平坦化层包含第三表面及第四表面,第三表面接触第二型半导体层的第二表面,第四表面具有第二算术平均粗糙度,第二算术平均粗糙度小于第一算术平均粗糙度。
Description
技术领域
本发明是关于发光二极管。
背景技术
由于发光二极管的节能与环保的特性,被认为新一代的主流照明装置。为了得到高亮度的发光二极管,必须提高发光二极管的取光率。然而,由于半导体材料的折射率较高,发光二极管产生的光辐射到外界的只是小部分,而大部分能量的光经过无数次全反射之后被电极或半导体材料吸收,尤其是短波长的光,例如UVC,问题更为明显,因而导致发光二极管的发光效率较低。故需要一种新颖的发光二极管,能够改善上述问题。
发明内容
根据本揭露的一态样,发光二极管包含第一型半导体层、主动层、第二型半导体层、图案化电极层、平坦化层及反射层。主动层配置于第一型半导体层上。第二型半导体层配置于主动层上,第二型半导体层包含彼此相对的一第一表面及一第二表面,其中第一表面面对主动层,第二表面具有第一算术平均粗糙度。图案化电极层配置于第二型半导体层的第二表面上,并暴露出第二型半导体层的一部分。平坦化层配置于第二型半导体层的露出部分上,平坦化层包含一开口,暴露出部分的图案化电极层,且平坦化层包含彼此相对的一第三表面及一第四表面,第三表面接触第二型半导体层的第二表面,第四表面具有第二算术平均粗糙度,第二算术平均粗糙度小于第一算术平均粗糙度。反射层接触平坦化层的第四表面。
根据本发明一或多个实施方式,图案化电极层包含多个电极,各电极彼此间隔。
根据本发明一或多个实施方式,发光二极管还包含一第一接点及一第二接点,其中第一接点电性连接第一型半导体层,第二接点电性连接反射层。
根据本发明一或多个实施方式,反射层覆盖图案化电极层及平坦化层。
根据本发明一或多个实施方式,反射层通过开口与图案化电极层电性连接。
根据本发明一或多个实施方式,平坦化层包含绝缘的氧化物或氮化物。
根据本发明一或多个实施方式,反射层包含金属反射材。
根据本发明一或多个实施方式,图案化电极层包含透光导电氧化物。
本发明提供一种发光二极管的结构,改善了全反射的问题,亦提升反射层的反射功效,进而提升发光二极管整体的取光率。
附图说明
当结合随附附图阅读时,自以下详细描述将很好地理解本揭露。应强调,根据工业中的标准实务,各特征并非按比例绘制且仅用于说明的目的。事实上,为了论述清晰的目的,可任意增加或减小特征的尺寸。
图1绘示根据本发明一实施例的发光二极管100的剖面示意图;
图2绘示图1的区域1100的放大示意图;
图3绘示根据本发明另一实施例的发光二极管300的剖面示意图;
图4绘示根据本发明一实施例的图案化电极层150的上视图;
图5绘示根据本发明一实施例的图案化电极层150的上视图。
具体实施方式
以下揭示内容提供许多不同实施例或示例,用于实施本发明的不同特征。下文描述组件及排列的特定实例以简化本揭露书的内容。当然,这些实例仅为示例且并不意欲为限制性。举例来说,在以下描述中,第一特征形成于第二特征上或之上包含第一特征与第二特征直接接触的实施例,亦可以包含第一特征与第二特征未直接接触的实施例。
此外,本发明可在各实例中重复元件符号及/或字母。此重复是为了简化,并不指示所论述的各实施例及/或配置之间的关系。再者,在本发明中,以下的特征形成于、连接至及/或耦合至另一个特征可以包含特征形成直接接触的实施例,亦可以包含另外的特征插入形成的特征的实施例,以使特征并未直接接触。进一步地,为了便于描述,本文可使用空间相对性用语(诸如“之下”、“下方”、“下部”、“上方”、“上部”及类似者)来描述诸图中所图示一个元件或特征与另一元件(或多个元件)或特征(或多个特征)的关系。空间相对性用语意欲包含元件在使用或操作中的不同定向。
本发明提供一种发光二极管,可以大幅增加发光二极管的取光率,亦同时降低层与层之间的接触电阻。
请参考图1,其绘示根据本发明一实施例的发光二极管100的剖面示意图。发光二极管100包含第一型半导体层120、主动层130、第二型半导体层140、图案化电极层150、平坦化层160及反射层170。
主动层130配置于第一型半导体层120上。在一些实施例中,主动层130为多层结构的量子井(multiple quantum well,MQW)。多层结构的量子井可以由多层井层(welllayer)与多层阻障层(barrier layer)交替堆叠构成。在一些实施例中,井层例如是氮化铟镓(InGaN)、氮化铝镓(AlGaN),而阻障层例如是氮化镓(GaN)、氮化铝镓(AlGaN)。量子井可以使电子与空穴有较高机会结合,并产生光线,提升发光二极管的发光效率。因此,主动层130亦做为发光二极管100的发光层。
第二型半导体层140配置于主动层130上。第二型半导体层140与第一型半导体层120的掺杂类型不同。举例来说,第一型半导体层120可以为N型掺杂,而第二型半导体层140为P型掺杂。在一些实施例中,第二型半导体层140为P型掺杂的氮化镓(GaN)。第二型半导体层140包含彼此相对的第一表面141及第二表面142。在一些实施例中,第一表面141接触主动层130。
图案化电极层150配置于第二型半导体层140的第二表面142上,并且暴露出第二型半导体层140的一部分。在一些实施例中,图案化电极层150包含透光导电氧化物。举例来说,图案化电极层150可以包含氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铝锌(AZO)、氧化锌(ZnO)或氧化锌镓(GZO)。此处的“透光导电氧化物”是指可以使主动层130发出的光线透过的氧化物材料。在一些实施例中,图案化电极层150是透明的。图案化电极层150可以与第二型半导体层140形成良好的欧姆接触,使得发光二极管100的电阻降低。
平坦化层160配置于第二型半导体层140的露出部分上。平坦化层160包含开口161,开口161暴露出部分的图案化电极层150。在一些实施例中,平坦化层160包含绝缘的氧化物或氮化物,例如氧化硅(SiOx)、二氧化钛(TiO2)、五氧化二钽(Ta2O5)、二氧化铪(HfO2)、氧化镁(MgO)或氮化硅(SiNx)。
反射层170配置于图案化电极层150及平坦化层160上。反射层170是用于将主动层130朝向图案化电极层150发出的光线反射,借以提高发光二极管100的取光率。因此,反射层170需使用可反射光线的材料制成。在一些实施例中,反射层170包含金属反射材料,例如铝、银、金或铑。
在一些实施例中,发光二极管100还包含第一接点181及第二接点182。第一接点181电性连接第一型半导体层120,而第二接点182电性连接反射层170。详细而言,反射层170接触图案化电极层150,又图案化电极层150接触第二型半导体层140,因此第二接点182亦电性连接第二型半导体层140。
在一些实施例中,发光二极管100进一步包含绝缘层180,覆盖反射层170、平坦化层160以及第一型半导体层120、主动层130及第二型半导体层140的侧壁。绝缘层180可以提供较佳的机械强度,避免第一型半导体层120、主动层130及第二型半导体层140受到损伤。
在某些实施例中,上述的元件皆形成于基板110上。因此,第一型半导体层120、主动层130、第二型半导体层140、图案化电极层150、平坦化层160及反射层170配置于基板110上。此外,在一些实施例中,可以在形成上述元件之后移除基板110,以减少发光二极管100的整体厚度。
请参考图2,其绘示图1的区域1100的放大示意图。平坦化层160包含彼此相对的第三表面162及第四表面163,其中第三表面162接触第二型半导体层140的第二表面142,而第四表面163接触反射层170。值得注意的是,平坦化层160的第四表面163大致平坦,而第二型半导体层140的第二表面142则为粗糙化表面。进一步说明,平坦化层160的第四表面163的算术平均粗糙度Ra小于第二型半导体层140的第二表面142的算术平均粗糙度Ra。此外,在一些实施例中,第二型半导体层140的第二表面142的最大高度粗糙度Rz大于例如或最大高度粗糙度Rz是指在取样范围内,最大波峰高度Rp加上最大波谷深度Rv的数值。在某些实施例中,平坦化层160的第四表面163的算术平均粗糙度Ra小于例如或
在一些实施例中,反射层170覆盖图案化电极层150及平坦化层160,且部分的反射层170配置于开口161中。因此,反射层170通过开口161与图案化电极层150电性连接。
此外,图案化电极层150包含上表面152及下表面151。下表面151接触第二型半导体层140的第二表面142。换句话说,下表面151沿着第二表面142延伸,且具有与第二表面142相似的粗糙表面。
值得注意的是,由于第二型半导体层140的第二表面142为粗糙化表面,因此可以避免主动层130发出的光线在第二型半导体层140与第一型半导体层120之间持续发生全反射,因而增加发光二极管的取光率。再者,由于反射层170与平坦化层160的接触面大致上平坦,因此可以使反射层170反射较多的光,亦增加发光二极管的取光率。
请参考图3,其绘示根据本发明另一实施例的发光二极管300的剖面示意图。为了方便说明的目的,在本发明的各绘示的实施例中,使用相同的标号标记相同的元件,故不再赘述重复部分。不同于图1绘示的发光二体100,发光二极管300的第一接点181贯穿主动层130、第二型半导体层140及反射层170,并且电性连接第一型半导体层120。第一接点181通过绝缘层180与主动层130、第二型半导体层140、图案化电极层150及反射层170电性绝缘。此外,绝缘层180完整覆盖反射层170。再者,类似于图1绘示的发光二极管100,发光二极管300的第二型半导体层140亦具有粗糙的第二表面142,而平坦化层160的第四表面163大致上平坦。因此,发光二极管300的取光率得以改善。
本发明亦提供不同态样的图案化电极层150。图4及图5绘示根据不同实施例的图案化电极层150的上视图。请参考图4,图案化电极层150包含多个电极155,各个电极155彼此间隔。电极155之间的间隔暴露出第二型半导体层140。因此,图4绘示的图案化电极层150亦称为“岛屿状”。
请参考图5,图案化电极层150包含多个开口,该些开口暴露出部分的第二型半导体层140。因此图5绘示的图案化电极层150亦称为“网状”。
需了解的是,图4及图5仅绘示例示性的图案化电极层150,可以依照需求改变图案化电极层150的形状配置。
本发明提供一种发光二极管的结构,改善了全反射的问题,亦提升反射层的反射功效,进而提升发光二极管整体的取光率。
特别的是,一般紫外线C发光二极管(UVC LED)中位于P型掺杂AlGaN层上的P型掺杂GaN层容易吸收紫外线C。本发明的结构亦可以改善上述紫外线C发光二极管的问题,提高其取光率。
上文概述若干实施例或示例的特征,使得熟悉此项技术者可更好地理解本发明的态样。熟悉此项技术者应了解,可轻易使用本发明作为基础来设计或修改其他制程及结构,以便实施本文所介绍的实施例的相同目的及/或实现相同优点。熟悉此项技术者亦应认识到,此类等效结构并未脱离本发明的精神及范畴,且可在不脱离本发明的精神及范畴的情况下产生本文的各种变化、替代及更改。
Claims (9)
1.一种发光二极管,其特征在于,包含:
一第一型半导体层;
一主动层,配置于该第一型半导体层上;
一第二型半导体层,配置于该主动层上,该第二型半导体层包含彼此相对的一第一表面及一第二表面,其中该第一表面面对该主动层,该第二表面具有一第一算术平均粗糙度;
一图案化电极层,配置于该第二型半导体层的该第二表面上,并暴露出该第二型半导体层的一部分,且该图案化电极层包含透光导电氧化物;
一平坦化层,配置于该第二型半导体层的该露出部分上,该平坦化层包含一开口暴露出部分的该图案化电极层,且该平坦化层包含彼此相对的一第三表面及一第四表面,该第三表面接触该第二型半导体层的该第二表面,该第四表面具有一第二算术平均粗糙度,该第二算术平均粗糙度小于该第一算术平均粗糙度;
一反射层,接触该平坦化层的该第四表面,其中该反射层连续地形成于该平坦化层及该图案化电极层之上,且该平坦化层覆盖部分的该图案化电极层;
一第一接点,该第一接点电性连接该第一型半导体层;
一第二接点,该第二接点电性连接该反射层;以及
一绝缘层,该绝缘层覆盖该反射层、该平坦化层、该第一型半导体层的侧壁、该主动层的侧壁及该第二型半导体层的侧壁。
2.根据权利要求1所述的发光二极管,其特征在于,该图案化电极层包含多个电极,各该电极彼此间隔。
3.根据权利要求1所述的发光二极管,其特征在于,该第一接点贯穿该主动层、该第二型半导体层及该反射层。
6.根据权利要求1所述的发光二极管,其特征在于,该反射层覆盖该图案化电极层及该平坦化层。
7.根据权利要求1所述的发光二极管,其特征在于,该反射层通过该开口与该图案化电极层电性连接。
8.根据权利要求1所述的发光二极管,其特征在于,该平坦化层包含绝缘的氧化物或氮化物。
9.根据权利要求1所述的发光二极管,其特征在于,该反射层包含金属反射材。
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