JP2005340431A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005340431A JP2005340431A JP2004156054A JP2004156054A JP2005340431A JP 2005340431 A JP2005340431 A JP 2005340431A JP 2004156054 A JP2004156054 A JP 2004156054A JP 2004156054 A JP2004156054 A JP 2004156054A JP 2005340431 A JP2005340431 A JP 2005340431A
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- semiconductor wafer
- semiconductor
- wafer
- main surface
- blade
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 184
- 238000000034 method Methods 0.000 title claims description 130
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 238000005520 cutting process Methods 0.000 claims abstract description 84
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 12
- 239000001569 carbon dioxide Substances 0.000 claims description 10
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 6
- 239000006061 abrasive grain Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 abstract description 30
- 235000012431 wafers Nutrition 0.000 description 183
- 229910021642 ultra pure water Inorganic materials 0.000 description 24
- 239000012498 ultrapure water Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 239000012790 adhesive layer Substances 0.000 description 9
- 238000005452 bending Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004156054A JP2005340431A (ja) | 2004-05-26 | 2004-05-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004156054A JP2005340431A (ja) | 2004-05-26 | 2004-05-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005340431A true JP2005340431A (ja) | 2005-12-08 |
| JP2005340431A5 JP2005340431A5 (enExample) | 2007-07-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004156054A Pending JP2005340431A (ja) | 2004-05-26 | 2004-05-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005340431A (enExample) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007266557A (ja) * | 2006-03-30 | 2007-10-11 | Renesas Technology Corp | 半導体装置の製造方法 |
| WO2007148724A1 (ja) * | 2006-06-23 | 2007-12-27 | Hitachi Chemical Company, Ltd. | 半導体デバイスの製造方法及び接着フィルム |
| JP2009260219A (ja) * | 2008-03-24 | 2009-11-05 | Hitachi Chem Co Ltd | 半導体ウェハのダイシング方法及び半導体装置の製造方法 |
| JP2013229451A (ja) * | 2012-04-25 | 2013-11-07 | Disco Abrasive Syst Ltd | ブレードカバー装置およびブレードカバー装置を備えた切削装置 |
| JP2014011280A (ja) * | 2012-06-28 | 2014-01-20 | Shindengen Electric Mfg Co Ltd | 半導体ウェーハのダイシング方法及び半導体装置の製造方法 |
| JP2014013812A (ja) * | 2012-07-04 | 2014-01-23 | Disco Abrasive Syst Ltd | SiC基板の加工方法 |
| JP2015100862A (ja) * | 2013-11-22 | 2015-06-04 | 株式会社ディスコ | 切削方法 |
| JP2016157718A (ja) * | 2015-02-23 | 2016-09-01 | 株式会社ディスコ | ウエーハの搬送方法及びウエーハの搬送機構 |
| JP2017147357A (ja) * | 2016-02-18 | 2017-08-24 | 三菱電機株式会社 | 基板、基板の切断方法 |
| JP2018073875A (ja) * | 2016-10-25 | 2018-05-10 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2019217611A (ja) * | 2018-06-22 | 2019-12-26 | 株式会社ディスコ | 研削砥石の目立て方法及び目立て用ウェーハ |
| JP2022128744A (ja) * | 2021-02-24 | 2022-09-05 | 三菱電機株式会社 | 半導体ウエハの分割方法 |
| KR20220155893A (ko) * | 2021-05-17 | 2022-11-24 | 사울텍 테크놀러지 컴퍼니 엘티디 | 다이 고정을 위한 하이브리드 본딩 방법 |
| CN115621302A (zh) * | 2022-10-31 | 2023-01-17 | 上海功成半导体科技有限公司 | 半导体器件及其制备方法 |
| KR20240125594A (ko) | 2021-12-17 | 2024-08-19 | 가부시키가이샤 에바라 세이사꾸쇼 | 정보 처리 장치, 추론 장치, 기계 학습 장치, 정보 처리 방법, 추론 방법, 및 기계 학습 방법 |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5458290A (en) * | 1977-10-17 | 1979-05-10 | Toshiba Corp | Diecing method |
| JPS62123737A (ja) * | 1985-11-25 | 1987-06-05 | Hitachi Ltd | ダイシング装置 |
| JPS6431604A (en) * | 1987-07-29 | 1989-02-01 | Sony Corp | Method and device for dicing |
| JPH03149183A (ja) * | 1989-11-02 | 1991-06-25 | Nec Yamaguchi Ltd | 半導体基板の切削方法 |
| JPH05228836A (ja) * | 1992-02-20 | 1993-09-07 | Tokyo Seimitsu Co Ltd | ダイシング装置及びダイシング装置の目立て方法 |
| JPH0613460A (ja) * | 1992-06-25 | 1994-01-21 | Fujitsu Ltd | ダイシング方法及びダイシング装置 |
| JPH06334035A (ja) * | 1993-05-24 | 1994-12-02 | Kawasaki Steel Corp | ウエハのダイシング方法 |
| JPH07106284A (ja) * | 1993-10-01 | 1995-04-21 | Sony Corp | ダイシング装置 |
| JPH10335272A (ja) * | 1997-05-29 | 1998-12-18 | Samsung Electron Co Ltd | ウェーハソーイング装置 |
| JP2000216123A (ja) * | 1999-01-22 | 2000-08-04 | Okamoto Machine Tool Works Ltd | ウエハの裏面研削およびダイシング方法 |
| JP2003135985A (ja) * | 2001-11-06 | 2003-05-13 | Tokyo Seimitsu Co Ltd | ダイシング装置 |
| JP2003168659A (ja) * | 2001-12-04 | 2003-06-13 | Tokyo Seimitsu Co Ltd | 高圧洗浄ノズルを有するシンギュレーション装置 |
-
2004
- 2004-05-26 JP JP2004156054A patent/JP2005340431A/ja active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5458290A (en) * | 1977-10-17 | 1979-05-10 | Toshiba Corp | Diecing method |
| JPS62123737A (ja) * | 1985-11-25 | 1987-06-05 | Hitachi Ltd | ダイシング装置 |
| JPS6431604A (en) * | 1987-07-29 | 1989-02-01 | Sony Corp | Method and device for dicing |
| JPH03149183A (ja) * | 1989-11-02 | 1991-06-25 | Nec Yamaguchi Ltd | 半導体基板の切削方法 |
| JPH05228836A (ja) * | 1992-02-20 | 1993-09-07 | Tokyo Seimitsu Co Ltd | ダイシング装置及びダイシング装置の目立て方法 |
| JPH0613460A (ja) * | 1992-06-25 | 1994-01-21 | Fujitsu Ltd | ダイシング方法及びダイシング装置 |
| JPH06334035A (ja) * | 1993-05-24 | 1994-12-02 | Kawasaki Steel Corp | ウエハのダイシング方法 |
| JPH07106284A (ja) * | 1993-10-01 | 1995-04-21 | Sony Corp | ダイシング装置 |
| JPH10335272A (ja) * | 1997-05-29 | 1998-12-18 | Samsung Electron Co Ltd | ウェーハソーイング装置 |
| JP2000216123A (ja) * | 1999-01-22 | 2000-08-04 | Okamoto Machine Tool Works Ltd | ウエハの裏面研削およびダイシング方法 |
| JP2003135985A (ja) * | 2001-11-06 | 2003-05-13 | Tokyo Seimitsu Co Ltd | ダイシング装置 |
| JP2003168659A (ja) * | 2001-12-04 | 2003-06-13 | Tokyo Seimitsu Co Ltd | 高圧洗浄ノズルを有するシンギュレーション装置 |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007266557A (ja) * | 2006-03-30 | 2007-10-11 | Renesas Technology Corp | 半導体装置の製造方法 |
| WO2007148724A1 (ja) * | 2006-06-23 | 2007-12-27 | Hitachi Chemical Company, Ltd. | 半導体デバイスの製造方法及び接着フィルム |
| US8034659B2 (en) | 2006-06-23 | 2011-10-11 | Hitachi Chemical Company, Ltd. | Production method of semiconductor device and bonding film |
| JP2009260219A (ja) * | 2008-03-24 | 2009-11-05 | Hitachi Chem Co Ltd | 半導体ウェハのダイシング方法及び半導体装置の製造方法 |
| JP2013229451A (ja) * | 2012-04-25 | 2013-11-07 | Disco Abrasive Syst Ltd | ブレードカバー装置およびブレードカバー装置を備えた切削装置 |
| JP2014011280A (ja) * | 2012-06-28 | 2014-01-20 | Shindengen Electric Mfg Co Ltd | 半導体ウェーハのダイシング方法及び半導体装置の製造方法 |
| JP2014013812A (ja) * | 2012-07-04 | 2014-01-23 | Disco Abrasive Syst Ltd | SiC基板の加工方法 |
| JP2015100862A (ja) * | 2013-11-22 | 2015-06-04 | 株式会社ディスコ | 切削方法 |
| JP2016157718A (ja) * | 2015-02-23 | 2016-09-01 | 株式会社ディスコ | ウエーハの搬送方法及びウエーハの搬送機構 |
| JP2017147357A (ja) * | 2016-02-18 | 2017-08-24 | 三菱電機株式会社 | 基板、基板の切断方法 |
| JP2018073875A (ja) * | 2016-10-25 | 2018-05-10 | 株式会社ディスコ | ウェーハの加工方法 |
| CN110634737A (zh) * | 2018-06-22 | 2019-12-31 | 株式会社迪思科 | 磨削磨具的修锐方法和修锐用晶片 |
| TWI799605B (zh) * | 2018-06-22 | 2023-04-21 | 日商迪思科股份有限公司 | 研削磨石磨銳方法以及磨銳用晶圓 |
| KR20200000338A (ko) * | 2018-06-22 | 2020-01-02 | 가부시기가이샤 디스코 | 연삭 지석의 드레싱 방법 및 드레싱용 웨이퍼 |
| KR102708811B1 (ko) | 2018-06-22 | 2024-09-23 | 가부시기가이샤 디스코 | 연삭 지석의 드레싱 방법 및 드레싱용 웨이퍼 |
| JP7154690B2 (ja) | 2018-06-22 | 2022-10-18 | 株式会社ディスコ | 研削砥石の目立て方法 |
| CN110634737B (zh) * | 2018-06-22 | 2024-03-19 | 株式会社迪思科 | 磨削磨具的修锐方法和修锐用晶片 |
| JP2019217611A (ja) * | 2018-06-22 | 2019-12-26 | 株式会社ディスコ | 研削砥石の目立て方法及び目立て用ウェーハ |
| JP7524793B2 (ja) | 2021-02-24 | 2024-07-30 | 三菱電機株式会社 | 半導体ウエハの分割方法 |
| JP2022128744A (ja) * | 2021-02-24 | 2022-09-05 | 三菱電機株式会社 | 半導体ウエハの分割方法 |
| KR20220155893A (ko) * | 2021-05-17 | 2022-11-24 | 사울텍 테크놀러지 컴퍼니 엘티디 | 다이 고정을 위한 하이브리드 본딩 방법 |
| KR102772060B1 (ko) * | 2021-05-17 | 2025-02-25 | 사울텍 테크놀러지 컴퍼니 엘티디 | 다이 고정을 위한 하이브리드 본딩 방법 |
| KR20240125594A (ko) | 2021-12-17 | 2024-08-19 | 가부시키가이샤 에바라 세이사꾸쇼 | 정보 처리 장치, 추론 장치, 기계 학습 장치, 정보 처리 방법, 추론 방법, 및 기계 학습 방법 |
| CN115621302A (zh) * | 2022-10-31 | 2023-01-17 | 上海功成半导体科技有限公司 | 半导体器件及其制备方法 |
| CN115621302B (zh) * | 2022-10-31 | 2023-08-11 | 上海功成半导体科技有限公司 | 半导体器件及其制备方法 |
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