JP4769429B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4769429B2 JP4769429B2 JP2004155881A JP2004155881A JP4769429B2 JP 4769429 B2 JP4769429 B2 JP 4769429B2 JP 2004155881 A JP2004155881 A JP 2004155881A JP 2004155881 A JP2004155881 A JP 2004155881A JP 4769429 B2 JP4769429 B2 JP 4769429B2
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- semiconductor device
- semiconductor wafer
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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Description
本実施の形態1の半導体装置の製造方法を図1のフロー図に沿って図2〜図31により説明する。
図33は本実施の形態2の半導体装置の製造工程中のウエハ1Wの切断領域CRの拡大平面図を示している。本実施の形態2では、パッド1LBtおよび前記アライメントターゲットAm(以下、パッド1LBt等という)の中心線がステルスダイシング時のレーザ光LBが照射される切断線CLからずれて配置されている。図33では、パッド1BLtが切断線CLを跨がずに切断線CLの上下に互いに斜め方向の位置になるように配置されている。なお、パッド1LBtと電気的に接続されるTEG用の素子や配線1L1も切断線CLを跨がないように上下に分離されて配置されている。
本実施の形態3では、チップ1Cの裏面にダイアタッチフィルム22を設ける場合について説明する。
本実施の形態4では、一般的な後工程への適用例を図38の半導体装置の製造装置のフロー図に沿って説明する。
1C 半導体チップ
1S 半導体基板
1L 配線層
1Li 層間絶縁膜
1L1,1L2 配線
1LB ボンディングパッド
1LBt テスト用のボンディングパッド(金属パターン)
1Lp 保護膜
2 開口部
3 治具
3a テープ
3a1 テープベース
3a2 接着層
3b リング(枠体)
3b1,3b2 切り欠き部
4 吸着ステージ
5a レーザ変位計
5b 赤外線カメラ
6 研削研磨工具
7 吸着ステージ
9 レーザ発生部
10 載置台
11 押上ピン
12 コレット
13 多突起吸着駒
15 プリント配線基板
16 接着材
17 ボンディングワイヤ
20 半導体装置
21 バンプ電極
22 ダイアタッチフィルム
23 スペーサ
24 封止体
27 治具
27a テープ
27a1 テープベース
27a2 接着層
27b リング
N ノッチ
Am アライメントターゲット(金属パターン)
S 溝
LB レーザ光(エネルギービーム)
PL 改質層
Claims (9)
- 以下の工程を含むことを特徴とする半導体装置の製造方法:
(a)複数のチップ領域と、前記複数のチップ領域のうちの互いに隣り合うチップ領域間に設けられた切断領域とを備えた半導体ウエハを準備する工程;
(b)前記(a)工程の後、前記半導体ウエハにテープを貼り付ける工程;
(c)前記(b)工程の後、前記半導体ウエハの前記切断領域に形成された金属パターンを認識する工程;
(d)前記(c)工程の後、前記半導体ウエハの内部に集光点を合わせ、前記切断領域にレーザを照射し、前記切断領域における前記半導体ウエハの前記内部に改質層を形成する工程;
(e)前記(d)工程の後、前記テープを引き伸ばすことにより、前記改質層を起点として前記半導体ウエハを分割する工程;
ここで、
前記(d)工程では、平面視において前記金属パターンと重ならないように、前記切断領域に沿ってレーザを照射し、平面視において前記金属パターンと重ならない位置に前記改質層を形成する。 - 請求項1記載の半導体装置の製造方法において、
前記半導体ウエハは、主面と、前記主面とは反対側の裏面とを有し、
前記(b)工程の後、かつ、前記(c)工程の前に、前記テープに前記半導体ウエハの前記主面を貼り付けた状態で、前記半導体ウエハの前記裏面を研削する工程を有することを特徴とする半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記半導体ウエハを研削した後に、前記半導体ウエハを研磨することを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記半導体ウエハを研磨した後の前記半導体ウエハの厚さは、100μmまたは100μmより薄いことを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記研磨する工程は、研磨パッドを用いて行われることを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記研磨する工程は、エッチング法により行われることを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記金属パターンは、前記切断領域の幅方向において、中心からずれて配置されていることを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記テープには、枠体が貼り付けられており、
前記(b)工程では、平面視において前記枠体の内側に前記半導体ウエハが位置するように、前記半導体ウエハに前記テープを貼り付けることを特徴とする半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記半導体ウエハの主面は、前記テープの主面に形成された接着層を介して貼り付けられていることを特徴とする半導体装置の製造方法。
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JP2012070004A (ja) * | 2011-12-21 | 2012-04-05 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
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JP5906265B2 (ja) * | 2014-03-03 | 2016-04-20 | 株式会社ディスコ | ウエーハの分割方法 |
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