JP2005340327A5 - - Google Patents

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Publication number
JP2005340327A5
JP2005340327A5 JP2004154226A JP2004154226A JP2005340327A5 JP 2005340327 A5 JP2005340327 A5 JP 2005340327A5 JP 2004154226 A JP2004154226 A JP 2004154226A JP 2004154226 A JP2004154226 A JP 2004154226A JP 2005340327 A5 JP2005340327 A5 JP 2005340327A5
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JP
Japan
Prior art keywords
element isolation
insulating film
isolation insulating
semiconductor substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004154226A
Other languages
English (en)
Japanese (ja)
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JP2005340327A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004154226A priority Critical patent/JP2005340327A/ja
Priority claimed from JP2004154226A external-priority patent/JP2005340327A/ja
Priority to TW094112882A priority patent/TWI282141B/zh
Priority to CNB2005100738401A priority patent/CN100461414C/zh
Priority to KR1020050043401A priority patent/KR100732647B1/ko
Priority to US11/139,002 priority patent/US7279769B2/en
Publication of JP2005340327A publication Critical patent/JP2005340327A/ja
Publication of JP2005340327A5 publication Critical patent/JP2005340327A5/ja
Pending legal-status Critical Current

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JP2004154226A 2004-05-25 2004-05-25 半導体装置及びその製造方法 Pending JP2005340327A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004154226A JP2005340327A (ja) 2004-05-25 2004-05-25 半導体装置及びその製造方法
TW094112882A TWI282141B (en) 2004-05-25 2005-04-22 Semiconductor device and manufacturing method thereof
CNB2005100738401A CN100461414C (zh) 2004-05-25 2005-05-24 半导体器件及其制造方法
KR1020050043401A KR100732647B1 (ko) 2004-05-25 2005-05-24 반도체장치 및 그 제조 방법
US11/139,002 US7279769B2 (en) 2004-05-25 2005-05-25 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004154226A JP2005340327A (ja) 2004-05-25 2004-05-25 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2005340327A JP2005340327A (ja) 2005-12-08
JP2005340327A5 true JP2005340327A5 (enExample) 2006-11-24

Family

ID=35446761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004154226A Pending JP2005340327A (ja) 2004-05-25 2004-05-25 半導体装置及びその製造方法

Country Status (5)

Country Link
US (1) US7279769B2 (enExample)
JP (1) JP2005340327A (enExample)
KR (1) KR100732647B1 (enExample)
CN (1) CN100461414C (enExample)
TW (1) TWI282141B (enExample)

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JP5195747B2 (ja) * 2007-03-27 2013-05-15 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5525695B2 (ja) * 2007-06-20 2014-06-18 株式会社東芝 半導体装置およびその製造方法
US20110316117A1 (en) * 2007-08-14 2011-12-29 Agency For Science, Technology And Research Die package and a method for manufacturing the die package
US7871895B2 (en) * 2008-02-19 2011-01-18 International Business Machines Corporation Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress
JPWO2010073947A1 (ja) * 2008-12-25 2012-06-14 国立大学法人東北大学 半導体装置及びその製造方法
JPWO2011138906A1 (ja) * 2010-05-07 2013-07-22 国立大学法人東北大学 半導体装置の製造方法
JP2012009791A (ja) * 2010-06-28 2012-01-12 Panasonic Corp 固体撮像装置及びその製造方法
JP5405437B2 (ja) * 2010-11-05 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 アイソレーション構造の形成方法
JP2012134302A (ja) * 2010-12-21 2012-07-12 Jsr Corp トレンチ埋め込み方法、及びトレンチ埋め込み用組成物
JP2013074169A (ja) * 2011-09-28 2013-04-22 Kyocera Corp 薄膜配線基板
KR102102815B1 (ko) 2013-09-26 2020-04-22 인텔 코포레이션 Ｎｍｏｓ 구조체들에서 전위가 높아진 변형을 형성하는 방법
US10204982B2 (en) * 2013-10-08 2019-02-12 Stmicroelectronics, Inc. Semiconductor device with relaxation reduction liner and associated methods
FR3024587B1 (fr) * 2014-08-01 2018-01-26 Soitec Procede de fabrication d'une structure hautement resistive
US10822692B2 (en) 2016-08-12 2020-11-03 University Of North Texas Binary Ag—Cu amorphous thin-films for electronic applications
KR102549340B1 (ko) * 2016-09-27 2023-06-28 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN110880473B (zh) * 2018-09-06 2025-02-25 长鑫存储技术有限公司 半导体器件、半导体器件制造方法

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JPH0547918A (ja) 1991-08-13 1993-02-26 Hitachi Ltd 半導体装置の製造方法
JPH05114646A (ja) 1991-10-24 1993-05-07 Fujitsu Ltd 半導体装置の製造方法
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JP2003031650A (ja) 2001-07-13 2003-01-31 Toshiba Corp 半導体装置の製造方法
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