JP4253312B2
(ja)
*
|
2005-04-15 |
2009-04-08 |
株式会社東芝 |
半導体記憶装置
|
EP1729302B1
(en)
*
|
2005-05-31 |
2019-01-02 |
Micron Technology, Inc. |
A circuit for retrieving data stored in semiconductor memory cells
|
DE102006052397B4
(de)
*
|
2005-11-07 |
2009-12-31 |
Samsung Electronics Co., Ltd., Suwon |
Nichtflüchtiger Halbleiterspeicher, nichflüchtiges Halbleiterspeicherelement, Verfahren zum Lesen einer Phasenwechsel-Speicherzelle und System
|
JP2007141273A
(ja)
*
|
2005-11-14 |
2007-06-07 |
Renesas Technology Corp |
不揮発性記憶装置
|
JP4901211B2
(ja)
*
|
2005-12-26 |
2012-03-21 |
株式会社東芝 |
センスアンプ及び半導体記憶装置
|
US7518930B2
(en)
*
|
2006-04-21 |
2009-04-14 |
Sandisk Corporation |
Method for generating and adjusting selected word line voltage
|
US7391650B2
(en)
*
|
2006-06-16 |
2008-06-24 |
Sandisk Corporation |
Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
|
US7821859B1
(en)
*
|
2006-10-24 |
2010-10-26 |
Cypress Semiconductor Corporation |
Adaptive current sense amplifier with direct array access capability
|
US7573748B2
(en)
*
|
2007-01-12 |
2009-08-11 |
Atmel Corporation |
Column leakage compensation in a sensing circuit
|
US7688122B2
(en)
*
|
2007-02-09 |
2010-03-30 |
Fujitsu Limited |
Charge pump with cascode biasing
|
US7639540B2
(en)
*
|
2007-02-16 |
2009-12-29 |
Mosaid Technologies Incorporated |
Non-volatile semiconductor memory having multiple external power supplies
|
WO2008133674A1
(en)
*
|
2007-04-27 |
2008-11-06 |
Sandisk Corporation |
Method and device for generating and adjusting selected word line voltage
|
US7995397B1
(en)
*
|
2007-05-03 |
2011-08-09 |
Cypress Semiconductor Corporation |
Power supply tracking single ended sensing scheme for SONOS memories
|
JP2009129470A
(ja)
*
|
2007-11-20 |
2009-06-11 |
Toshiba Corp |
半導体記憶装置
|
US7701761B2
(en)
*
|
2007-12-20 |
2010-04-20 |
Sandisk Corporation |
Read, verify word line reference voltage to track source level
|
US7764547B2
(en)
|
2007-12-20 |
2010-07-27 |
Sandisk Corporation |
Regulation of source potential to combat cell source IR drop
|
JP5319917B2
(ja)
*
|
2007-12-28 |
2013-10-16 |
株式会社東芝 |
半導体記憶装置
|
KR101434400B1
(ko)
*
|
2008-07-09 |
2014-08-27 |
삼성전자주식회사 |
불휘발성 메모리 장치 및 메모리 시스템 및 그것의 관리방법
|
JP2010097344A
(ja)
*
|
2008-10-15 |
2010-04-30 |
Elpida Memory Inc |
半導体装置
|
JP5437658B2
(ja)
*
|
2009-02-18 |
2014-03-12 |
セイコーインスツル株式会社 |
データ読出回路及び半導体記憶装置
|
US8509002B2
(en)
|
2009-05-29 |
2013-08-13 |
Samsung Electronics Co., Ltd. |
Semiconductor memory device and method of driving the same
|
JP2011118982A
(ja)
*
|
2009-12-03 |
2011-06-16 |
Toppan Printing Co Ltd |
フラッシュメモリ
|
JP2011210348A
(ja)
*
|
2010-03-11 |
2011-10-20 |
Sony Corp |
制御電圧生成回路及びそれを備えた不揮発性記憶装置
|
US9423814B2
(en)
*
|
2010-03-16 |
2016-08-23 |
Macronix International Co., Ltd. |
Apparatus of supplying power while maintaining its output power signal and method therefor
|
US8498141B2
(en)
*
|
2010-03-24 |
2013-07-30 |
Kabushiki Kaisha Toshiba |
Non-volatile semiconductor memory device
|
US8743630B2
(en)
*
|
2011-05-23 |
2014-06-03 |
Infineon Technologies Ag |
Current sense amplifier with replica bias scheme
|
US8630125B2
(en)
*
|
2011-06-02 |
2014-01-14 |
Micron Technology, Inc. |
Memory cell sensing using a boost voltage
|
US8773913B1
(en)
*
|
2011-12-02 |
2014-07-08 |
Cypress Semiconductor Corporation |
Systems and methods for sensing in memory devices
|
US8611157B2
(en)
*
|
2011-12-22 |
2013-12-17 |
Sandisk Technologies Inc. |
Program temperature dependent read
|
US9343146B2
(en)
*
|
2012-01-10 |
2016-05-17 |
Micron Technology, Inc. |
Apparatuses and methods for low power current mode sense amplification
|
US9208871B2
(en)
*
|
2012-01-30 |
2015-12-08 |
HGST Netherlands B.V. |
Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding
|
KR101998076B1
(ko)
*
|
2012-05-30 |
2019-07-09 |
삼성전자 주식회사 |
집적 회로 및 이를 포함하는 장치들
|
JP5710561B2
(ja)
*
|
2012-08-29 |
2015-04-30 |
株式会社東芝 |
半導体記憶装置
|
US8665651B1
(en)
*
|
2012-09-11 |
2014-03-04 |
Winbond Electronics Corp. |
Reference cell circuit and method of producing a reference current
|
TWI485713B
(zh)
*
|
2012-12-11 |
2015-05-21 |
Winbond Electronics Corp |
用以產生參考電流之參考單元電路以及方法
|
JP6097582B2
(ja)
*
|
2013-02-01 |
2017-03-15 |
ローム株式会社 |
定電圧源
|
US8760930B1
(en)
*
|
2013-02-18 |
2014-06-24 |
Spansion Llc. |
Memory device with source-side sensing
|
US9177663B2
(en)
|
2013-07-18 |
2015-11-03 |
Sandisk Technologies Inc. |
Dynamic regulation of memory array source line
|
US9960672B2
(en)
*
|
2013-08-09 |
2018-05-01 |
SK Hynix Inc. |
High voltage generator
|
US9368224B2
(en)
|
2014-02-07 |
2016-06-14 |
SanDisk Technologies, Inc. |
Self-adjusting regulation current for memory array source line
|
US9484809B2
(en)
*
|
2014-06-21 |
2016-11-01 |
Brian Harold Floyd |
Apparatus and methods for low voltage high PSRR systems
|
ITUB20155867A1
(it)
*
|
2015-11-24 |
2017-05-24 |
St Microelectronics Srl |
Circuito amplificatore di lettura con compensazione dell'offset per un dispositivo di memoria non volatile
|
US10636456B2
(en)
*
|
2016-01-12 |
2020-04-28 |
Sony Corporation |
Semiconductor storage device and method of controlling the semiconductor storage device to minimize failures in data writing
|
US10095432B2
(en)
|
2016-09-27 |
2018-10-09 |
Intel Corporation |
Power management and monitoring for storage devices
|
US9727267B1
(en)
*
|
2016-09-27 |
2017-08-08 |
Intel Corporation |
Power management and monitoring for storage devices
|
JP6752126B2
(ja)
*
|
2016-11-25 |
2020-09-09 |
ラピスセミコンダクタ株式会社 |
センスアンプ回路
|
US10692581B2
(en)
|
2017-01-18 |
2020-06-23 |
Microchip Technology Incorporated |
Circuits for bleeding supply voltage from a device in a power down state
|
CN108377091B
(zh)
*
|
2018-04-12 |
2019-10-25 |
武汉新芯集成电路制造有限公司 |
电荷泵驱动电路
|
KR102627994B1
(ko)
*
|
2018-10-04 |
2024-01-22 |
삼성전자주식회사 |
비휘발성 메모리 장치의 센싱 회로, 이를 포함하는 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 동작 방법
|
KR102714233B1
(ko)
|
2019-04-05 |
2024-10-08 |
에스케이하이닉스 시스템아이씨 (우시) 씨오엘티디 |
불휘발성 메모리 장치의 동적 전압 공급 회로 및 이를 포함하는 불휘발성 메모리 장치
|
KR102689654B1
(ko)
*
|
2019-07-10 |
2024-07-31 |
삼성전자주식회사 |
메모리 장치
|
US11094386B1
(en)
*
|
2020-02-13 |
2021-08-17 |
Intel Corporation |
Device, system, and method to verify data programming of a multi-level cell memory based on one of temperature, pressure, wear condition or relative position of the memory cell
|
CN112542197A
(zh)
*
|
2020-12-29 |
2021-03-23 |
深圳市芯天下技术有限公司 |
提高灵敏放大器读取可靠性方法、装置、存储介质和终端
|
US11367468B1
(en)
|
2021-02-26 |
2022-06-21 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Sense amplifier
|
US20240329153A1
(en)
*
|
2023-03-29 |
2024-10-03 |
Arm Limited |
Current Measurement Architecture
|