JP2005276930A5 - - Google Patents

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Publication number
JP2005276930A5
JP2005276930A5 JP2004085051A JP2004085051A JP2005276930A5 JP 2005276930 A5 JP2005276930 A5 JP 2005276930A5 JP 2004085051 A JP2004085051 A JP 2004085051A JP 2004085051 A JP2004085051 A JP 2004085051A JP 2005276930 A5 JP2005276930 A5 JP 2005276930A5
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JP
Japan
Prior art keywords
trench
aspect ratio
inclination angle
semiconductor device
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2004085051A
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English (en)
Japanese (ja)
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JP2005276930A (ja
JP4564272B2 (ja
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Publication date
Priority claimed from JP2004085051A external-priority patent/JP4564272B2/ja
Priority to JP2004085051A priority Critical patent/JP4564272B2/ja
Application filed filed Critical
Priority to US11/085,112 priority patent/US20050221579A1/en
Priority to KR1020050023520A priority patent/KR100707899B1/ko
Priority to CNB2005100560678A priority patent/CN100377332C/zh
Publication of JP2005276930A publication Critical patent/JP2005276930A/ja
Publication of JP2005276930A5 publication Critical patent/JP2005276930A5/ja
Priority to US11/611,030 priority patent/US7781293B2/en
Publication of JP4564272B2 publication Critical patent/JP4564272B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004085051A 2004-03-23 2004-03-23 半導体装置およびその製造方法 Expired - Lifetime JP4564272B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004085051A JP4564272B2 (ja) 2004-03-23 2004-03-23 半導体装置およびその製造方法
US11/085,112 US20050221579A1 (en) 2004-03-23 2005-03-22 Semiconductor device and method of fabricating the same
KR1020050023520A KR100707899B1 (ko) 2004-03-23 2005-03-22 반도체 장치 및 그 제조 방법
CNB2005100560678A CN100377332C (zh) 2004-03-23 2005-03-23 半导体器件及其制造方法
US11/611,030 US7781293B2 (en) 2004-03-23 2006-12-14 Semiconductor device and method of fabricating the same including trenches of different aspect ratios

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004085051A JP4564272B2 (ja) 2004-03-23 2004-03-23 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2005276930A JP2005276930A (ja) 2005-10-06
JP2005276930A5 true JP2005276930A5 (enExample) 2006-03-16
JP4564272B2 JP4564272B2 (ja) 2010-10-20

Family

ID=35046651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004085051A Expired - Lifetime JP4564272B2 (ja) 2004-03-23 2004-03-23 半導体装置およびその製造方法

Country Status (4)

Country Link
US (2) US20050221579A1 (enExample)
JP (1) JP4564272B2 (enExample)
KR (1) KR100707899B1 (enExample)
CN (1) CN100377332C (enExample)

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JP4564272B2 (ja) 2004-03-23 2010-10-20 株式会社東芝 半導体装置およびその製造方法
JP4533358B2 (ja) 2005-10-18 2010-09-01 キヤノン株式会社 インプリント方法、インプリント装置およびチップの製造方法
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KR100913004B1 (ko) * 2006-09-06 2009-08-20 주식회사 하이닉스반도체 반도체 소자의 트랜치 형성 방법
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JP2010272758A (ja) * 2009-05-22 2010-12-02 Hitachi High-Technologies Corp 被エッチング材のプラズマエッチング方法
US8138093B2 (en) * 2009-08-12 2012-03-20 International Business Machines Corporation Method for forming trenches having different widths and the same depth
KR101666645B1 (ko) * 2010-08-05 2016-10-17 삼성전자주식회사 다양한 소자 분리 영역들을 갖는 반도체 소자의 제조 방법
WO2013177576A1 (en) * 2012-05-25 2013-11-28 The Regents Of The University Of California Method for fabrication of high aspect ratio trenches and formation of nanoscale features therefrom
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CN104217985A (zh) * 2013-05-31 2014-12-17 中芯国际集成电路制造(上海)有限公司 半导体器件和浅沟槽的制作方法
CN105470201A (zh) * 2014-06-18 2016-04-06 上海华力微电子有限公司 一种同时改善STI和FG Poly填充空洞的闪存器件工艺方法
CN105336696A (zh) * 2014-06-18 2016-02-17 上海华力微电子有限公司 一种同时改善STI和FG Poly填充孔洞工艺窗口的方法
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JP6591291B2 (ja) 2016-01-07 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10896803B2 (en) 2016-08-19 2021-01-19 The Regents Of The University Of California Ion beam mill etch depth monitoring with nanometer-scale resolution
US10593678B1 (en) 2018-08-24 2020-03-17 Micron Technology, Inc. Methods of forming semiconductor devices using aspect ratio dependent etching effects, and related semiconductor devices
CN114242726A (zh) * 2021-12-16 2022-03-25 上海华虹宏力半导体制造有限公司 闪存存储器及其制造方法

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