JP2009135483A5 - - Google Patents

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Publication number
JP2009135483A5
JP2009135483A5 JP2008284435A JP2008284435A JP2009135483A5 JP 2009135483 A5 JP2009135483 A5 JP 2009135483A5 JP 2008284435 A JP2008284435 A JP 2008284435A JP 2008284435 A JP2008284435 A JP 2008284435A JP 2009135483 A5 JP2009135483 A5 JP 2009135483A5
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JP
Japan
Prior art keywords
semiconductor layer
insulating film
film
semiconductor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008284435A
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English (en)
Japanese (ja)
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JP2009135483A (ja
JP5286034B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008284435A priority Critical patent/JP5286034B2/ja
Priority claimed from JP2008284435A external-priority patent/JP5286034B2/ja
Publication of JP2009135483A publication Critical patent/JP2009135483A/ja
Publication of JP2009135483A5 publication Critical patent/JP2009135483A5/ja
Application granted granted Critical
Publication of JP5286034B2 publication Critical patent/JP5286034B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008284435A 2007-11-07 2008-11-05 半導体装置の作製方法 Expired - Fee Related JP5286034B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008284435A JP5286034B2 (ja) 2007-11-07 2008-11-05 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007289750 2007-11-07
JP2007289750 2007-11-07
JP2008284435A JP5286034B2 (ja) 2007-11-07 2008-11-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009135483A JP2009135483A (ja) 2009-06-18
JP2009135483A5 true JP2009135483A5 (enExample) 2011-12-15
JP5286034B2 JP5286034B2 (ja) 2013-09-11

Family

ID=40588492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008284435A Expired - Fee Related JP5286034B2 (ja) 2007-11-07 2008-11-05 半導体装置の作製方法

Country Status (2)

Country Link
US (3) US7749850B2 (enExample)
JP (1) JP5286034B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8759917B2 (en) * 2010-01-04 2014-06-24 Samsung Electronics Co., Ltd. Thin-film transistor having etch stop multi-layer and method of manufacturing the same
JP5888990B2 (ja) * 2011-01-12 2016-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9048327B2 (en) * 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
CN111403489B (zh) * 2020-04-15 2023-06-27 合肥鑫晟光电科技有限公司 薄膜晶体管、显示基板及其制作方法
CN112582476B (zh) * 2020-12-09 2022-05-06 全芯智造技术有限公司 半导体器件及其形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016587A (en) 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
JPH04348040A (ja) * 1991-01-18 1992-12-03 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP3277548B2 (ja) 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
US5491099A (en) 1994-08-29 1996-02-13 United Microelectronics Corporation Method of making silicided LDD with recess in semiconductor substrate
JPH09298170A (ja) * 1996-04-30 1997-11-18 Hitachi Ltd 半導体装置用電極配線およびその製造方法
US6063675A (en) 1996-10-28 2000-05-16 Texas Instruments Incorporated Method of forming a MOSFET using a disposable gate with a sidewall dielectric
US6306712B1 (en) 1997-12-05 2001-10-23 Texas Instruments Incorporated Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processing
EP1649506A1 (en) * 2003-07-31 2006-04-26 Advanced Micro Devices, Inc. Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor
JP2005167068A (ja) * 2003-12-04 2005-06-23 Seiko Epson Corp 半導体装置およびその製造方法
US7018901B1 (en) * 2004-09-29 2006-03-28 Freescale Semiconductor, Inc. Method for forming a semiconductor device having a strained channel and a heterojunction source/drain
JP4655797B2 (ja) * 2005-07-19 2011-03-23 信越半導体株式会社 直接接合ウエーハの製造方法
KR100647457B1 (ko) * 2005-12-09 2006-11-23 한국전자통신연구원 반도체 소자 및 그 제조방법
US7772054B2 (en) * 2007-06-15 2010-08-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7851318B2 (en) * 2007-11-01 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device

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