JP2005012109A5 - - Google Patents

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Publication number
JP2005012109A5
JP2005012109A5 JP2003176906A JP2003176906A JP2005012109A5 JP 2005012109 A5 JP2005012109 A5 JP 2005012109A5 JP 2003176906 A JP2003176906 A JP 2003176906A JP 2003176906 A JP2003176906 A JP 2003176906A JP 2005012109 A5 JP2005012109 A5 JP 2005012109A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003176906A
Other versions
JP4524735B2 (ja
JP2005012109A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2003176906A external-priority patent/JP4524735B2/ja
Priority to JP2003176906A priority Critical patent/JP4524735B2/ja
Priority to TW093116314A priority patent/TWI237266B/zh
Priority to US10/867,787 priority patent/US7141835B2/en
Priority to KR1020040045019A priority patent/KR100641262B1/ko
Priority to CNB2004100600011A priority patent/CN100474443C/zh
Publication of JP2005012109A publication Critical patent/JP2005012109A/ja
Publication of JP2005012109A5 publication Critical patent/JP2005012109A5/ja
Priority to US11/594,800 priority patent/US7265412B2/en
Publication of JP4524735B2 publication Critical patent/JP4524735B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003176906A 2003-06-20 2003-06-20 半導体記憶装置 Expired - Fee Related JP4524735B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003176906A JP4524735B2 (ja) 2003-06-20 2003-06-20 半導体記憶装置
TW093116314A TWI237266B (en) 2003-06-20 2004-06-07 Semiconductor memory device
US10/867,787 US7141835B2 (en) 2003-06-20 2004-06-16 Semiconductor memory device having memory cells requiring no refresh operation
KR1020040045019A KR100641262B1 (ko) 2003-06-20 2004-06-17 리프레쉬 동작이 불필요한 메모리 셀을 포함하는 반도체기억 장치
CNB2004100600011A CN100474443C (zh) 2003-06-20 2004-06-18 具有无需更新动作的存储单元的半导体存储装置
US11/594,800 US7265412B2 (en) 2003-06-20 2006-11-09 Semiconductor memory device having memory cells requiring no refresh operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003176906A JP4524735B2 (ja) 2003-06-20 2003-06-20 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005012109A JP2005012109A (ja) 2005-01-13
JP2005012109A5 true JP2005012109A5 (ja) 2006-07-27
JP4524735B2 JP4524735B2 (ja) 2010-08-18

Family

ID=33516269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003176906A Expired - Fee Related JP4524735B2 (ja) 2003-06-20 2003-06-20 半導体記憶装置

Country Status (5)

Country Link
US (2) US7141835B2 (ja)
JP (1) JP4524735B2 (ja)
KR (1) KR100641262B1 (ja)
CN (1) CN100474443C (ja)
TW (1) TWI237266B (ja)

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US7183169B1 (en) * 2005-03-07 2007-02-27 Advanced Micro Devices, Inc. Method and arrangement for reducing source/drain resistance with epitaxial growth
JP2007184323A (ja) * 2006-01-04 2007-07-19 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP2010067854A (ja) * 2008-09-11 2010-03-25 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP5735429B2 (ja) * 2008-11-05 2015-06-17 パワー・インテグレーションズ・インコーポレーテッド スロープの側壁を有する垂直接合型電界効果トランジスタ、及びその製造方法
JP2009048772A (ja) * 2008-12-05 2009-03-05 Renesas Technology Corp 半導体記憶装置
KR101751908B1 (ko) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
KR20200088506A (ko) * 2010-01-24 2020-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011149768A2 (en) 2010-05-25 2011-12-01 Ss Sc Ip, Llc Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
TWI543158B (zh) * 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 半導體儲存裝置及其驅動方法

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JPH02116162A (ja) * 1988-10-25 1990-04-27 Nec Corp 半導体記憶装置
JPH03218667A (ja) * 1989-11-01 1991-09-26 Hitachi Ltd 半導体記憶装置
US5151762A (en) * 1990-04-12 1992-09-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device, fabricating method thereof and flash control device using the semiconductor device
JP2557553B2 (ja) * 1990-05-28 1996-11-27 株式会社東芝 スタティック型半導体メモリ
JP2829156B2 (ja) * 1991-07-25 1998-11-25 株式会社東芝 不揮発性半導体記憶装置の冗長回路
JP2905647B2 (ja) * 1992-04-30 1999-06-14 三菱電機株式会社 スタティックランダムアクセスメモリ装置
JPH05326951A (ja) * 1992-05-21 1993-12-10 Matsushita Electron Corp Ｍｉｓ型電界効果トランジスタ
JPH06188388A (ja) * 1992-12-17 1994-07-08 Hitachi Ltd 半導体記憶装置
JPH06224415A (ja) * 1993-01-21 1994-08-12 Sanyo Electric Co Ltd 半導体デバイス
JP3280156B2 (ja) 1994-05-13 2002-04-30 株式会社日立製作所 半導体記憶装置及びその製造方法
US5541870A (en) * 1994-10-28 1996-07-30 Symetrix Corporation Ferroelectric memory and non-volatile memory cell for same
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
US5863819A (en) * 1995-10-25 1999-01-26 Micron Technology, Inc. Method of fabricating a DRAM access transistor with dual gate oxide technique
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TW353809B (en) * 1996-12-25 1999-03-01 Sony Corp Gate charge storage type memory cells and process for making the same
JP3604524B2 (ja) * 1997-01-07 2004-12-22 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ
JPH11224495A (ja) * 1998-02-05 1999-08-17 Hitachi Ltd 半導体集積回路装置
JP2000223700A (ja) * 1999-01-28 2000-08-11 Sharp Corp 半導体装置及びその製造方法
US7190023B2 (en) * 1999-09-17 2007-03-13 Renesas Technology Corp. Semiconductor integrated circuit having discrete trap type memory cells
KR100308132B1 (ko) * 1999-10-07 2001-11-02 김영환 비휘발성 메모리소자와 그의 셀어레이 및 그의 데이타 센싱방법
JP3627647B2 (ja) * 2000-10-27 2005-03-09 セイコーエプソン株式会社 半導体メモリ装置内のワード線の活性化
JP4749538B2 (ja) * 2000-12-11 2011-08-17 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2002198443A (ja) * 2000-12-26 2002-07-12 Nec Corp 半導体装置及びその製造方法
JP2003078620A (ja) 2001-09-05 2003-03-14 Satoshi Osawa 回線交換情報処理装置
JP2003258129A (ja) * 2002-03-01 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
JP4294256B2 (ja) * 2002-03-28 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
JP4251815B2 (ja) * 2002-04-04 2009-04-08 株式会社ルネサステクノロジ 半導体記憶装置
JP2003323798A (ja) * 2002-04-26 2003-11-14 Fujitsu Ltd 半導体記憶装置、およびその制御方法
JP2004079843A (ja) 2002-08-20 2004-03-11 Renesas Technology Corp 半導体記憶装置

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